Anode base regions of thyristors

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H01L29/1016

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/1016Anode base regions of thyristors

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Patents Grantslast 30 patents

Information Patent Grant
Thyristor
- Patent number 11,699,745
- Issue date Jul 11, 2023
- Macronix International Co., Ltd.
- Shih-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor volatile random access memory and methods of manufacture
- Patent number 11,114,438
- Issue date Sep 7, 2021
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Thyristor volatile random access memory and methods of manufacture
- Patent number 10,553,588
- Issue date Feb 4, 2020
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor volatile random access memory and methods of manufacture
- Patent number 10,529,718
- Issue date Jan 7, 2020
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of writing into and refreshing a thyristor volatile random a...
- Patent number 10,438,952
- Issue date Oct 8, 2019
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Thyristor volatile random access memory and methods of manufacture
- Patent number 10,332,886
- Issue date Jun 25, 2019
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
TVS structures for high surge and low capacitance
- Patent number 10,096,588
- Issue date Oct 9, 2018
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component including a short-circuit structure
- Patent number 9,876,004
- Issue date Jan 23, 2018
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor volatile random access memory and methods of manufacture
- Patent number 9,837,418
- Issue date Dec 5, 2017
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including a diode and guard ring
- Patent number 9,704,946
- Issue date Jul 11, 2017
- Mitsubishi Electric Corporation
- Yasuhiro Yoshiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable FIN-SCR for robust ESD protection
- Patent number 9,608,098
- Issue date Mar 28, 2017
- INTEL DEUTSCHLAND GMBH
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and corresponding module
- Patent number 9,455,340
- Issue date Sep 27, 2016
- ABB Schweiz AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with high blocking voltage terminated by a negative bevel
- Patent number 9,349,797
- Issue date May 24, 2016
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with high blocking voltage terminated by a negative bevel
- Patent number 9,337,268
- Issue date May 10, 2016
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with high blocking voltage terminated by a negative bevel
- Patent number 9,306,004
- Issue date Apr 5, 2016
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and substrate with chalcogen doped region
- Patent number 9,159,783
- Issue date Oct 13, 2015
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with improved dynamic behavior
- Patent number 9,105,682
- Issue date Aug 11, 2015
- Infineon Technologies Austria AG
- Hans-Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection structure
- Patent number 8,981,482
- Issue date Mar 17, 2015
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Xiang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable fin-SCR for robust ESD protection
- Patent number 8,963,201
- Issue date Feb 24, 2015
- Intel Mobile Communications GmbH
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SCR apparatus and method for adjusting the sustaining voltage
- Patent number 8,890,259
- Issue date Nov 18, 2014
- CSMC Technologies Fab1 Co., Ltd.
- Meng Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit with electrostatic discharge protection
- Patent number 8,841,727
- Issue date Sep 23, 2014
- Cypress Semiconductor Corporation
- Andrew Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and substrate with chalcogen doped region
- Patent number 8,361,893
- Issue date Jan 29, 2013
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit with electrostatic discharge protection
- Patent number 8,283,727
- Issue date Oct 9, 2012
- Cypress Semiconductor Corporation
- Andrew Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage SCRMOS in BiCMOS process technologies
- Patent number 8,120,108
- Issue date Feb 21, 2012
- Texas Instruments Incorporated
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor element with an emitter region and a stop zone...
- Patent number 7,612,388
- Issue date Nov 3, 2009
- Infineon Technologies AG
- Josef-Georg Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power component manufacturing method
- Patent number 6,784,465
- Issue date Aug 31, 2004
- STMicroelectronics S.A.
- Mathieu Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor provided with integrated circuit-commutated recovery time...
- Patent number 6,723,586
- Issue date Apr 20, 2004
- Siemens Aktiengesellschaft
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a power semiconductor device with a stop zone
- Patent number 6,660,569
- Issue date Dec 9, 2003
- EUPEC Europaeische Gesellschaft fuer Leitungshalbleiter mbH & Co. KG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power component manufacturing method
- Patent number 6,579,782
- Issue date Jun 17, 2003
- STMicroelectronics S.A.
- Mathieu Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for setting the breakover voltage of a thyristor
- Patent number 6,489,187
- Issue date Dec 3, 2002
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THYRISTOR
- Publication number 20230133016
- Publication date May 4, 2023
- Macronix International Co., Ltd.
- Shih-Yu WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor Volatile Random Access Memory and Methods of Manufacture
- Publication number 20210057415
- Publication date Feb 25, 2021
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor Volatile Random Access Memory and Methods of Manufacture
- Publication number 20200043930
- Publication date Feb 6, 2020
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Application
Thyristor Volatile Random Access Memory and Methods of Manufacture
- Publication number 20180323197
- Publication date Nov 8, 2018
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor Volatile Random Access Memory and Methods of Manufacture
- Publication number 20180301455
- Publication date Oct 18, 2018
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor Volatile Random Access Memory and Methods of Manufacture
- Publication number 20180097005
- Publication date Apr 5, 2018
- Kilopass Technology, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor Volatile Random Access Memory and Methods of Manufacture
- Publication number 20170323891
- Publication date Nov 9, 2017
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Application
Thyristor Volatile Random Access Memory and Methods of Manufacture
- Publication number 20170025414
- Publication date Jan 26, 2017
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Application
Thyristor Volatile Random Access Memory and Methods of Manufacture
- Publication number 20160093624
- Publication date Mar 31, 2016
- Kilopass Technology, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunable Fin-SCR for Robust ESD Protection
- Publication number 20130229223
- Publication date Sep 5, 2013
- Intel Mobile Communications GmbH
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Substrate with Chalcogen Doped Region
- Publication number 20130119522
- Publication date May 16, 2013
- INFINEON TECHNOLOGIES AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCR APPARATUS AND METHOD FOR ADJUSTING THE SUSTAINING VOLTAGE
- Publication number 20130099278
- Publication date Apr 25, 2013
- Meng Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL
- Publication number 20130026493
- Publication date Jan 31, 2013
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL
- Publication number 20120292636
- Publication date Nov 22, 2012
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Substrate with Chalcogen Doped Region
- Publication number 20120248576
- Publication date Oct 4, 2012
- INFINEON TECHNOLOGIES AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component with Improved Dynamic Behavior
- Publication number 20120217539
- Publication date Aug 30, 2012
- INFINEON TECHNOLOGIES AUSTRIA AG
- Hans-Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION STRUCTURE
- Publication number 20120074497
- Publication date Mar 29, 2012
- Xiang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SCRMOS IN BiCMOS PROCESS TECHNOLOGIES
- Publication number 20110180870
- Publication date Jul 28, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate turn-off thyristor
- Publication number 20070120145
- Publication date May 31, 2007
- Katsunori Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical power component manufacturing method
- Publication number 20030219964
- Publication date Nov 27, 2003
- STMicroelectronics S.A.
- Mathieu Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for setting the breakover voltage of a thyristor
- Publication number 20020022306
- Publication date Feb 21, 2002
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical power component manufacturing method
- Publication number 20010011717
- Publication date Aug 9, 2001
- Roy Mathieu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor element with an emitter region and a stop zone...
- Publication number 20010005024
- Publication date Jun 28, 2001
- Josef-Georg Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor component for high reverse voltages
- Publication number 20010005036
- Publication date Jun 28, 2001
- Alfred Porst
- H01 - BASIC ELECTRIC ELEMENTS

Anode base regions of thyristors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Thyristor

Thyristor volatile random access memory and methods of manufacture

Thyristor volatile random access memory and methods of manufacture

Thyristor volatile random access memory and methods of manufacture

Method of writing into and refreshing a thyristor volatile random a...

Thyristor volatile random access memory and methods of manufacture

TVS structures for high surge and low capacitance

Semiconductor component including a short-circuit structure

Thyristor volatile random access memory and methods of manufacture

Semiconductor device including a diode and guard ring

Tunable FIN-SCR for robust ESD protection

Power semiconductor device and corresponding module

SiC devices with high blocking voltage terminated by a negative bevel

SiC devices with high blocking voltage terminated by a negative bevel

SiC devices with high blocking voltage terminated by a negative bevel

Semiconductor device and substrate with chalcogen doped region

Semiconductor component with improved dynamic behavior

ESD protection structure

Tunable fin-SCR for robust ESD protection

SCR apparatus and method for adjusting the sustaining voltage

Circuit with electrostatic discharge protection

Semiconductor device and substrate with chalcogen doped region

Circuit with electrostatic discharge protection

High voltage SCRMOS in BiCMOS process technologies

Power semiconductor element with an emitter region and a stop zone...

Vertical power component manufacturing method

Thyristor provided with integrated circuit-commutated recovery time...

Method for producing a power semiconductor device with a stop zone

Vertical power component manufacturing method

Method for setting the breakover voltage of a thyristor

Patents Applicationslast 30 patents

THYRISTOR

Thyristor Volatile Random Access Memory and Methods of Manufacture

Thyristor Volatile Random Access Memory and Methods of Manufacture

Thyristor Volatile Random Access Memory and Methods of Manufacture

Thyristor Volatile Random Access Memory and Methods of Manufacture

Thyristor Volatile Random Access Memory and Methods of Manufacture

Thyristor Volatile Random Access Memory and Methods of Manufacture

Thyristor Volatile Random Access Memory and Methods of Manufacture

Thyristor Volatile Random Access Memory and Methods of Manufacture

Tunable Fin-SCR for Robust ESD Protection

Semiconductor Device and Substrate with Chalcogen Doped Region

SCR APPARATUS AND METHOD FOR ADJUSTING THE SUSTAINING VOLTAGE

SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL

SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL

Semiconductor Device and Substrate with Chalcogen Doped Region

Semiconductor Component with Improved Dynamic Behavior

ESD PROTECTION STRUCTURE

HIGH VOLTAGE SCRMOS IN BiCMOS PROCESS TECHNOLOGIES

Gate turn-off thyristor

Vertical power component manufacturing method

Method for setting the breakover voltage of a thyristor

Vertical power component manufacturing method

Power semiconductor element with an emitter region and a stop zone...

Power semiconductor component for high reverse voltages