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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02398Antimonides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device including graphene and method of manufacturing...
- Patent number 12,027,589
- Issue date Jul 2, 2024
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of producing a two-dimensional material
- Patent number 11,848,206
- Issue date Dec 19, 2023
- Paragraf Ltd.
- Simon Charles Stewart Thomas
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded planar buffer for nanowires
- Patent number 11,798,988
- Issue date Oct 24, 2023
- Microsoft Technology Licensing, LLC
- Geoffrey C. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integration of a III-V construction on a group IV substrate
- Patent number 11,646,200
- Issue date May 9, 2023
- Imec VZW
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,603,603
- Issue date Mar 14, 2023
- United States of Americas as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,535,951
- Issue date Dec 27, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a two-dimensional material
- Patent number 11,456,172
- Issue date Sep 27, 2022
- Paragraf Ltd.
- Simon Charles Stewart Thomas
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Optimized Heteropitaxial growth of semiconductors
- Patent number 11,434,583
- Issue date Sep 6, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,390,963
- Issue date Jul 19, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized Heteroepitaxial growth of semiconductors
- Patent number 11,384,448
- Issue date Jul 12, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing a two-dimensional material
- Patent number 11,217,447
- Issue date Jan 4, 2022
- Paragraf Ltd.
- Simon Charles Stewart Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal substrate, infrared detector, and method for...
- Patent number 11,152,210
- Issue date Oct 19, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal substrate, infrared detector, method for prod...
- Patent number 11,043,517
- Issue date Jun 22, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal substrate, infrared detector, and method for...
- Patent number 10,937,647
- Issue date Mar 2, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal substrate, infrared detector, method for prod...
- Patent number 10,720,455
- Issue date Jul 21, 2020
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a two-dimensional material
- Patent number 10,593,546
- Issue date Mar 17, 2020
- Paragraf Ltd.
- Simon Charles Stewart Thomas
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Surface functionalization and passivation with a control layer
- Patent number 10,262,858
- Issue date Apr 16, 2019
- Applied Materials, Inc.
- Naomi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of surfactants to control island size and density
- Patent number 9,735,008
- Issue date Aug 15, 2017
- University of Utah Research Foundation
- Jason Merrell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor element and method for producing the same
- Patent number 9,608,148
- Issue date Mar 28, 2017
- Sumitomo Electric Industries, Ltd
- Takashi Kyono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
INAS/ALSB/GASB based type-II SL pin detector with P on N and N on P...
- Patent number 9,312,410
- Issue date Apr 12, 2016
- Aselsan Elektronik Sanayi Ve Ticaret Anonim Sirketi
- Yuksel Ergun
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices and methods of manufacturing the same
- Patent number 9,230,804
- Issue date Jan 5, 2016
- Samsung Electronics Co., Ltd.
- Sangmoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using molecular beam epitaxy in a semiconductor structure with a hi...
- Patent number 9,214,518
- Issue date Dec 15, 2015
- Taiwan Semiconductor Manufacturing Company Limited and National Taiwan Univer...
- Jui-Lin Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High operating temperature barrier infrared detector with tailorabl...
- Patent number 8,928,036
- Issue date Jan 6, 2015
- California Institute of Technology
- David Z. Ting
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FABRICATING A DEVICE HAVING A PASSIVATING LAYER
- Publication number 20250006486
- Publication date Jan 2, 2025
- Microsoft Technology Licensing, LLC
- Asbjørn Cennet Cliff Drachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230045019
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230038745
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042736
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042689
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230033788
- Publication date Feb 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- G02 - OPTICS
Information Patent Application
A METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL
- Publication number 20220399201
- Publication date Dec 15, 2022
- Paragraf Ltd.
- Simon Charles Stewart THOMAS
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20220267925
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL
- Publication number 20220028683
- Publication date Jan 27, 2022
- Paragraf Ltd.
- Simon Charles Stewart THOMAS
- C01 - INORGANIC CHEMISTRY
Information Patent Application
INTEGRATION OF A III-V CONSTRUCTION ON A GROUP IV SUBSTRATE
- Publication number 20210358748
- Publication date Nov 18, 2021
- IMEC vzw
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED PLANAR BUFFER FOR NANOWIRES
- Publication number 20210210599
- Publication date Jul 8, 2021
- Microsoft Technology Licensing, LLC
- Geoffrey C. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...
- Publication number 20210143009
- Publication date May 13, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preparing a heterostructure
- Publication number 20210090955
- Publication date Mar 25, 2021
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Xin OU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GRAPHENE AND METHOD OF MANUFACTURING...
- Publication number 20210074815
- Publication date Mar 11, 2021
- Samsung Electronics Co., Ltd.
- Keunwook SHIN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, METHOD FOR PROD...
- Publication number 20200295059
- Publication date Sep 17, 2020
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL
- Publication number 20200194255
- Publication date Jun 18, 2020
- Paragraf Ltd.
- Simon Charles Stewart THOMAS
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...
- Publication number 20190214252
- Publication date Jul 11, 2019
- FUJITSU LIMITED
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL
- Publication number 20180308684
- Publication date Oct 25, 2018
- Paragraf Ltd.
- Simon Charles Stewart THOMAS
- C30 - CRYSTAL GROWTH
Information Patent Application
SURFACE FUNCTIONALIZATION AND PASSIVATION WITH A CONTROL LAYER
- Publication number 20170309479
- Publication date Oct 26, 2017
- Applied Materials, Inc.
- Naomi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stable P-Type Zinc Oxide and Bandgap Engineered Zinc Oxide and Othe...
- Publication number 20170253992
- Publication date Sep 7, 2017
- Eric A Burgett
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME
- Publication number 20140353586
- Publication date Dec 4, 2014
- Sumitomo Electric Industries, Ltd.
- Takashi KYONO
- G01 - MEASURING TESTING
Information Patent Application
USE OF SURFACTANTS TO CONTROL ISLAND SIZE AND DENSITY
- Publication number 20140130731
- Publication date May 15, 2014
- The University of Utah
- Jason Merrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
n- and p-Channel Field Effect Transistors with Single Quantum Well...
- Publication number 20130149845
- Publication date Jun 13, 2013
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Long Wavelength Infrared Superlattice
- Publication number 20130043459
- Publication date Feb 21, 2013
- SVT Associates, Inc.
- Yiqiao Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Long Wavelength Infrared Superlattice
- Publication number 20130043458
- Publication date Feb 21, 2013
- SVT Associates, Inc.
- Yiqiao Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20120205783
- Publication date Aug 16, 2012
- SNU R&DB Foundation
- Sangmoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVELOPMENT OF AN ELECTRONIC DEVICE QUALITY ALUMINUM ANTIMONIDE (Al...
- Publication number 20120058595
- Publication date Mar 8, 2012
- John W. Sherohman
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
N-and P-Channel Field-Effect Transistors with Single Quantum Well f...
- Publication number 20110297916
- Publication date Dec 8, 2011
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Long Wavelength Infrared Superlattice
- Publication number 20110272672
- Publication date Nov 10, 2011
- SVT Associates, Inc.
- Yiqiao Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH OPERATING TEMPERATURE BARRIER INFRARED DETECTOR WITH TAILORABL...
- Publication number 20100072514
- Publication date Mar 25, 2010
- California Institute of Technology
- David Z. Ting
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Antimonides

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Semiconductor device including graphene and method of manufacturing...

Method of producing a two-dimensional material

Optimized heteroepitaxial growth of semiconductors

Graded planar buffer for nanowires

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Integration of a III-V construction on a group IV substrate

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Method of producing a two-dimensional material

Optimized Heteropitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized Heteroepitaxial growth of semiconductors

Method of producing a two-dimensional material

Semiconductor crystal substrate, infrared detector, and method for...

Semiconductor crystal substrate, infrared detector, method for prod...

Semiconductor crystal substrate, infrared detector, and method for...

Semiconductor crystal substrate, infrared detector, method for prod...

Method of producing a two-dimensional material

Surface functionalization and passivation with a control layer

Use of surfactants to control island size and density

Semiconductor element and method for producing the same

INAS/ALSB/GASB based type-II SL pin detector with P on N and N on P...

Semiconductor devices and methods of manufacturing the same

Using molecular beam epitaxy in a semiconductor structure with a hi...

High operating temperature barrier infrared detector with tailorabl...

Patents Applicationslast 30 patents

METHOD OF FABRICATING A DEVICE HAVING A PASSIVATING LAYER

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

A METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL

Optimized Heteroepitaxial Growth of Semiconductors

METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL

INTEGRATION OF A III-V CONSTRUCTION ON A GROUP IV SUBSTRATE

GRADED PLANAR BUFFER FOR NANOWIRES

SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...

Method for preparing a heterostructure

SEMICONDUCTOR DEVICE INCLUDING GRAPHENE AND METHOD OF MANUFACTURING...

SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, METHOD FOR PROD...

METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL

SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...

A METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL

SURFACE FUNCTIONALIZATION AND PASSIVATION WITH A CONTROL LAYER

Stable P-Type Zinc Oxide and Bandgap Engineered Zinc Oxide and Othe...

SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME

USE OF SURFACTANTS TO CONTROL ISLAND SIZE AND DENSITY

n- and p-Channel Field Effect Transistors with Single Quantum Well...

Long Wavelength Infrared Superlattice

Long Wavelength Infrared Superlattice

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

DEVELOPMENT OF AN ELECTRONIC DEVICE QUALITY ALUMINUM ANTIMONIDE (Al...

N-and P-Channel Field-Effect Transistors with Single Quantum Well f...

Long Wavelength Infrared Superlattice

HIGH OPERATING TEMPERATURE BARRIER INFRARED DETECTOR WITH TAILORABL...