Array wherein each memory cell has more than one access device

Industry

CPC
G11C2213/74

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

Current Industry

G11C2213/74Array wherein each memory cell has more than one access device

Industries

Patents Grantslast 30 patents

Information Patent Grant
Optimized static random access memory
- Patent number 12,016,169
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ping-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing unit with fast read speed memory device
- Patent number 11,984,163
- Issue date May 14, 2024
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with differential threshold voltages
- Patent number 11,978,509
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
2T-1R architecture for resistive ram
- Patent number 11,908,515
- Issue date Feb 20, 2024
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing disturbance in crossbar array circuits
- Patent number 11,735,256
- Issue date Aug 22, 2023
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon over insulator two-transistor one-resistor in-series resist...
- Patent number 11,659,720
- Issue date May 23, 2023
- Weebit Nano Ltd.
- Lior Dagan
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast read speed memory device
- Patent number 11,651,820
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Crossbar array circuit with parallel grounding lines
- Patent number 11,610,942
- Issue date Mar 21, 2023
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Grant
2T-1R architecture for resistive RAM
- Patent number 11,568,929
- Issue date Jan 31, 2023
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Crossbar array circuits with 2T1R RRAM cells for low voltage operat...
- Patent number 11,495,638
- Issue date Nov 8, 2022
- TetraMem Inc.
- Wenbo Yin
- G11 - INFORMATION STORAGE
Information Patent Grant
Optimized static random access memory
- Patent number 11,393,831
- Issue date Jul 19, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Ping-Wei Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells, memory cell programming methods, memory cell reading...
- Patent number 11,393,530
- Issue date Jul 19, 2022
- Micron Technology, Inc.
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory architectures with multiple memory cells per acces...
- Patent number 11,349,072
- Issue date May 31, 2022
- OVONYX MEMORY TECHNOLOGY, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast read speed memory device
- Patent number 11,257,544
- Issue date Feb 22, 2022
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Correlated electron switch
- Patent number 11,183,998
- Issue date Nov 23, 2021
- CERFE LABS, INC.
- Lucian Shifren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-bar arrays having steering element with diode
- Patent number 11,170,852
- Issue date Nov 9, 2021
- SanDisk Technologies LLC
- Justin Phillip Kinney
- G11 - INFORMATION STORAGE
Information Patent Grant
Memristive bit cell with switch regulating components
- Patent number 11,158,370
- Issue date Oct 26, 2021
- Hewlett Packard Enterprise Development LP
- Emmanuelle J. Merced Grafals
- G11 - INFORMATION STORAGE
Information Patent Grant
Three terminal selectors for memory applications and their methods...
- Patent number 11,088,204
- Issue date Aug 10, 2021
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2T-1R architecture for resistive RAM
- Patent number 11,081,176
- Issue date Aug 3, 2021
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Crossbar array circuit with parallel grounding lines
- Patent number 11,069,742
- Issue date Jul 20, 2021
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for low power write and read operations for resistive memory
- Patent number 11,024,356
- Issue date Jun 1, 2021
- Intel Corporation
- Liqiong Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory using gate-all-around structures
- Patent number 11,011,577
- Issue date May 18, 2021
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Two transistor, one resistor non-volatile gain cell memory and stor...
- Patent number 10,950,301
- Issue date Mar 16, 2021
- Intel Corporation
- Rafael Rios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for vitamin D enhancement in mushrooms
- Patent number 10,930,342
- Issue date Feb 23, 2021
- Oakshire Holdings, Inc.
- William F. Chalupa
- A23 - FOODS OR FOODSTUFFS THEIR TREATMENT, NOT COVERED BY OTHER CLASSES
Information Patent Grant
Stacked nanosheet 4T2R unit cell for neuromorphic computing
- Patent number 10,879,308
- Issue date Dec 29, 2020
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method, system and device for non-volatile memory device operation
- Patent number 10,861,541
- Issue date Dec 8, 2020
- ARM Ltd.
- Bal S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory write and read assistance using negative differential resist...
- Patent number 10,832,752
- Issue date Nov 10, 2020
- The Regents of the University of California
- Puneet Gupta
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast read speed memory device
- Patent number 10,825,518
- Issue date Nov 3, 2020
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductive metal oxide structures in non-volatile re-writable memor...
- Patent number 10,803,935
- Issue date Oct 13, 2020
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory architectures with multiple memory cells per acces...
- Patent number 10,797,237
- Issue date Oct 6, 2020
- Micron Technology, Inc.
- Jun Liu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENTIAL THRESHOLD VOLTAGES
- Publication number 20240274189
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
MACRO AND SRAM BIT CELL COOPTIMIZATOIN FOR PERFORMANCE (LONG/SHORTW...
- Publication number 20230371225
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- Ping-Wei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING DISTURBANCE IN CROSSBAR ARRAY CIRCUITS
- Publication number 20230335190
- Publication date Oct 19, 2023
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Application
CROSSBAR ARRAY CIRCUIT WITH PARALLEL GROUNDING LINES
- Publication number 20230209841
- Publication date Jun 29, 2023
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Application
2T-1R ARCHITECTURE FOR RESISTIVE RAM
- Publication number 20230154531
- Publication date May 18, 2023
- Hefei Reliance Memory Limited
- Deepak Chandra SEKAR
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, Memory Cell Programming Methods, Memory Cell Reading...
- Publication number 20220351775
- Publication date Nov 3, 2022
- Micron Technology, Inc.
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENTIAL THRESHOLD VOLTAGES
- Publication number 20220336012
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
OPTIMIZED STATIC RANDOM ACCESS MEMORY
- Publication number 20220310630
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ping-Wei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...
- Publication number 20220271224
- Publication date Aug 25, 2022
- Ovonyx Memory Technology, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
FAST READ SPEED MEMORY DEVICE
- Publication number 20220157378
- Publication date May 19, 2022
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Application
CROSSBAR ARRAY CIRCUITS WITH 2T1R RRAM CELLS FOR LOW VOLTAGE OPERAT...
- Publication number 20220130902
- Publication date Apr 28, 2022
- Tetramem Inc.
- Wenbo Yin
- G11 - INFORMATION STORAGE
Information Patent Application
FAST READ SPEED MEMORY DEVICE
- Publication number 20220130459
- Publication date Apr 28, 2022
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Application
SILICON OVER INSULATOR TWO-TRANSISTOR ONE-RESISTOR IN-SERIES RESIST...
- Publication number 20220020815
- Publication date Jan 20, 2022
- Weebit Nano Ltd.
- Lior DAGAN
- G11 - INFORMATION STORAGE
Information Patent Application
CROSSBAR ARRAY CIRCUIT WITH PARALLEL GROUNDING LINES
- Publication number 20210320148
- Publication date Oct 14, 2021
- Tetramem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Application
2T-1R ARCHITECTURE FOR RESISTIVE RAM
- Publication number 20210295913
- Publication date Sep 23, 2021
- Hefei Reliance Memory Limited
- Deepak Chandra SEKAR
- G11 - INFORMATION STORAGE
Information Patent Application
MEMRISTIVE BIT CELL WITH SWITCH REGULATING COMPONENTS
- Publication number 20210193222
- Publication date Jun 24, 2021
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Emmanuelle J. Merced Grafals
- G11 - INFORMATION STORAGE
Information Patent Application
Method and Apparatus for Vitamin D Enhancement in Mushrooms
- Publication number 20210142851
- Publication date May 13, 2021
- Oakshire Holdings, Inc.
- William F. CHALUPA
- A23 - FOODS OR FOODSTUFFS THEIR TREATMENT, NOT COVERED BY OTHER CLASSES
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20210098063
- Publication date Apr 1, 2021
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Application
THREE TERMINAL SELECTORS FOR MEMORY APPLICATIONS AND THEIR METHODS...
- Publication number 20210074766
- Publication date Mar 11, 2021
- Intel Corporation
- Ravi Pillarisetty
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING DISTURBANCE IN CROSSBAR ARRAY CIRCUITS
- Publication number 20210065793
- Publication date Mar 4, 2021
- Tetramem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, Memory Cell Programming Methods, Memory Cell Reading...
- Publication number 20210005259
- Publication date Jan 7, 2021
- Micron Technology, Inc.
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...
- Publication number 20210005811
- Publication date Jan 7, 2021
- Ovonyx Memory Technology, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
FAST READ SPEED MEMORY DEVICE
- Publication number 20200411093
- Publication date Dec 31, 2020
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Application
2T-1R ARCHITECTURE FOR RESISTIVE RAM
- Publication number 20200211644
- Publication date Jul 2, 2020
- Hefei Reliance Memory Limited
- Deepak Chandra SEKAR
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY USING GATE-ALL-AROUND STRUCTURES
- Publication number 20200194499
- Publication date Jun 18, 2020
- Attopsemi Technology, Co., LTD
- Shine C. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...
- Publication number 20200044151
- Publication date Feb 6, 2020
- Ovonyx Memory Technology, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY
- Publication number 20200020378
- Publication date Jan 16, 2020
- Intel Corporation
- Liqiong WEI
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20190371396
- Publication date Dec 5, 2019
- UNITY SEMICONDUCTOR CORPORATION
- Lawrence Schloss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FAST READ SPEED MEMORY DEVICE
- Publication number 20190348115
- Publication date Nov 14, 2019
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Devices, Memory Device Constructions, Constructions, Memory...
- Publication number 20190280046
- Publication date Sep 12, 2019
- Micron Technology, Inc.
- Chandra Mouli
- H01 - BASIC ELECTRIC ELEMENTS

Array wherein each memory cell has more than one access device

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optimized static random access memory

Processing unit with fast read speed memory device

Semiconductor memory devices with differential threshold voltages

2T-1R architecture for resistive ram

Reducing disturbance in crossbar array circuits

Silicon over insulator two-transistor one-resistor in-series resist...

Fast read speed memory device

Crossbar array circuit with parallel grounding lines

2T-1R architecture for resistive RAM

Crossbar array circuits with 2T1R RRAM cells for low voltage operat...

Optimized static random access memory

Memory cells, memory cell programming methods, memory cell reading...

Resistive memory architectures with multiple memory cells per acces...

Fast read speed memory device

Correlated electron switch

Cross-bar arrays having steering element with diode

Memristive bit cell with switch regulating components

Three terminal selectors for memory applications and their methods...

2T-1R architecture for resistive RAM

Crossbar array circuit with parallel grounding lines

Apparatus for low power write and read operations for resistive memory

One-time programmable memory using gate-all-around structures

Two transistor, one resistor non-volatile gain cell memory and stor...

Method and apparatus for vitamin D enhancement in mushrooms

Stacked nanosheet 4T2R unit cell for neuromorphic computing

Method, system and device for non-volatile memory device operation

Memory write and read assistance using negative differential resist...

Fast read speed memory device

Conductive metal oxide structures in non-volatile re-writable memor...

Resistive memory architectures with multiple memory cells per acces...

Patents Applicationslast 30 patents

SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENTIAL THRESHOLD VOLTAGES

MACRO AND SRAM BIT CELL COOPTIMIZATOIN FOR PERFORMANCE (LONG/SHORTW...

REDUCING DISTURBANCE IN CROSSBAR ARRAY CIRCUITS

CROSSBAR ARRAY CIRCUIT WITH PARALLEL GROUNDING LINES

2T-1R ARCHITECTURE FOR RESISTIVE RAM

Memory Cells, Memory Cell Programming Methods, Memory Cell Reading...

SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENTIAL THRESHOLD VOLTAGES

OPTIMIZED STATIC RANDOM ACCESS MEMORY

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...

FAST READ SPEED MEMORY DEVICE

CROSSBAR ARRAY CIRCUITS WITH 2T1R RRAM CELLS FOR LOW VOLTAGE OPERAT...

FAST READ SPEED MEMORY DEVICE

SILICON OVER INSULATOR TWO-TRANSISTOR ONE-RESISTOR IN-SERIES RESIST...

CROSSBAR ARRAY CIRCUIT WITH PARALLEL GROUNDING LINES

2T-1R ARCHITECTURE FOR RESISTIVE RAM

MEMRISTIVE BIT CELL WITH SWITCH REGULATING COMPONENTS

Method and Apparatus for Vitamin D Enhancement in Mushrooms

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

THREE TERMINAL SELECTORS FOR MEMORY APPLICATIONS AND THEIR METHODS...

REDUCING DISTURBANCE IN CROSSBAR ARRAY CIRCUITS

Memory Cells, Memory Cell Programming Methods, Memory Cell Reading...

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...

FAST READ SPEED MEMORY DEVICE

2T-1R ARCHITECTURE FOR RESISTIVE RAM

ONE-TIME PROGRAMMABLE MEMORY USING GATE-ALL-AROUND STRUCTURES

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...

APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

FAST READ SPEED MEMORY DEVICE

Memory Devices, Memory Device Constructions, Constructions, Memory...