Auxiliary circuits

Industry

CPC
G11C17/18

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C17/00Read-only memories programmable only once Semi-permanent stores

Current Industry

G11C17/18Auxiliary circuits

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory with one-time programmable (OTP) cells
- Patent number 12,224,024
- Issue date Feb 11, 2025
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable (OTP) low power circuits and methods for prov...
- Patent number 12,224,023
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Himanshu Saxena
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device including sense amplifier and method for...
- Patent number 12,224,025
- Issue date Feb 11, 2025
- SK keyfoundry Inc.
- Seong Jun Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory readout circuit and method
- Patent number 12,217,810
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Min Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse device and method
- Patent number 12,219,755
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Min-Shin Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable bitcell for frontside and backside power inte...
- Patent number 12,217,809
- Issue date Feb 4, 2025
- Synopsys, Inc.
- Andrew Edward Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with source line control
- Patent number 12,217,822
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of manufacturing thereof
- Patent number 12,218,047
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-fuse memory cell circuit and method
- Patent number 12,211,568
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Fuse link programming cell, programming circuit, control circuit, a...
- Patent number 12,198,771
- Issue date Jan 14, 2025
- Shanghai Huali Integrated Circuit Corporation
- Ying Yan
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with dielectric fin structures
- Patent number 12,198,785
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Fuse circuits
- Patent number 12,183,673
- Issue date Dec 31, 2024
- Skyworks Solutions, Inc.
- Bo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Operating a memory unit using a low-power direct-current (DC) power...
- Patent number 12,183,408
- Issue date Dec 31, 2024
- Ningbo Aura Semiconductor Co., Ltd.
- Arnold J D'Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time programmable fuse using thin film resistor layer, and rela...
- Patent number 12,176,048
- Issue date Dec 24, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Siow Lee Chwa
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable (OTP) magnetoresistive random-access memory (...
- Patent number 12,170,105
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory circuit and method
- Patent number 12,165,722
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gu-Huan Li
- G11 - INFORMATION STORAGE
Information Patent Grant
One-transistor (1T) one-time programmable (OTP) anti-fuse bitcell w...
- Patent number 12,167,590
- Issue date Dec 10, 2024
- Synopsys, Inc.
- Andrew Edward Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse structure, anti-fuse array and memory
- Patent number 12,154,636
- Issue date Nov 26, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Chuangming Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
eFUSE programming feedback circuits and methods
- Patent number 12,150,298
- Issue date Nov 19, 2024
- Texas Instruments Incorporated
- Anand Seshadri
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse memory reading circuit with controllable reading time
- Patent number 12,119,069
- Issue date Oct 15, 2024
- WUXI ESIONTECH CO., LTD.
- Zhengzhou Cao
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple stack high voltage circuit for memory
- Patent number 12,094,558
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Bit selection for power reduction in stacking structure during memo...
- Patent number 12,087,378
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse programming control circuit based on master-slave charge...
- Patent number 12,087,377
- Issue date Sep 10, 2024
- WUXI ESIONTECH CO., LTD.
- Zhengzhou Cao
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse readout circuit, anti-fuse memory, and testing method
- Patent number 12,082,402
- Issue date Sep 3, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Rumin Ji
- G11 - INFORMATION STORAGE
Information Patent Grant
Radiation hardened e-fuse macro
- Patent number 12,080,344
- Issue date Sep 3, 2024
- BAE Systems Information and Electronic Systems Integration Inc.
- Jason F. Ross
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable bitcell with select device in isolated well
- Patent number 12,082,403
- Issue date Sep 3, 2024
- Synopsys, Inc.
- Andrew Edward Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse array
- Patent number 12,073,169
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Layout structure including anti-fuse cell
- Patent number 12,063,773
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Voltage trimming circuit
- Patent number 12,062,404
- Issue date Aug 13, 2024
- Samsung Electronics Co., Ltd.
- Minho Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of operating the same
- Patent number 12,058,852
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsiang-Wei Liu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Multibit High Density Read Only Memory Using Multiple Reference Biases
- Publication number 20250029669
- Publication date Jan 23, 2025
- Taalas Inc.
- Ljubisa Bajic
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL FUSE ARRAY ARCHITECTURE
- Publication number 20250024670
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Antonino Rigano
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PHYSICALLY UNCLONABLE FUNCTION THROUGH GATE HEIGHT TUNING
- Publication number 20250017003
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SMALL-AREA COMMON-VOLTAGE ANTI-FUSE ARRAY
- Publication number 20250014660
- Publication date Jan 9, 2025
- YIELD MICROELECTRONICS CORP.
- YU-TING HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUF...
- Publication number 20250006283
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Michael Allen Ball
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250006282
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
RADIATION HARDENED E-FUSE MACRO
- Publication number 20240404591
- Publication date Dec 5, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Jason F. Ross
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND INKJET PRINTING ELEMENT SUBSTRATE
- Publication number 20240404612
- Publication date Dec 5, 2024
- Canon Kabushiki Kaisha
- TOSHIO NEGISHI
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICES
- Publication number 20240404611
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chrong Jung Lin
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICE
- Publication number 20240397710
- Publication date Nov 28, 2024
- Ememory Technology Inc.
- Lun-Chun CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMING MEMORY INCLUDING FORKSHEET TRANSISTORS AND USI...
- Publication number 20240395863
- Publication date Nov 28, 2024
- EMEMORY TECHNOLOGY INC.
- Lun-Chun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT
- Publication number 20240386978
- Publication date Nov 21, 2024
- Rohm Co., Ltd.
- Naohiro NOMURA
- G11 - INFORMATION STORAGE
Information Patent Application
METAL FUSE STRUCTURE BY VIA LANDING
- Publication number 20240389312
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bit Selection for Power Reduction in Stacking Structure During Memo...
- Publication number 20240386979
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
Multiple Stack High Voltage Circuit for Memory
- Publication number 20240386919
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FUSE DEVICE
- Publication number 20240370622
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE FOR PERFORMING IN-MEMORY COMPUTATION AND OPERATING ME...
- Publication number 20240371453
- Publication date Nov 7, 2024
- Macronix International Co., Ltd.
- Yu-Yu Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE, INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240357805
- Publication date Oct 24, 2024
- Ipcell Corporation Limited
- Te-Hsun HSU
- G11 - INFORMATION STORAGE
Information Patent Application
LAYOUT STRUCTURE INCLUDING ANTI-FUSE CELL
- Publication number 20240349494
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ANTI-FUSE CIRCUIT AND ANTI-FUSE UNIT PROGRAMMING STATE VERIFICATION...
- Publication number 20240339165
- Publication date Oct 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Jiarui Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
Electronic Device and Driving Method Thereof
- Publication number 20240339164
- Publication date Oct 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHODS
- Publication number 20240331786
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
DIELECTRIC FILM BASED ONE-TIME PROGRAMMABLE (OTP) MEMORY CELL
- Publication number 20240321369
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Abhijeet PAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DELAY ELEMENTS FOR COMMAND TIMING IN A MEMORY DEVICE
- Publication number 20240320169
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- James S. Rehmeyer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ONE TIME PROGRAMMING MEMORY CELL AND MEMORY ARRAY FOR PHYSICALLY UN...
- Publication number 20240321778
- Publication date Sep 26, 2024
- EMEMORY TECHNOLOGY INC.
- Tsao-Hsin YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICES AND METHODS
- Publication number 20240321371
- Publication date Sep 26, 2024
- SANDISK TECHNOLOGIES LLC
- Deniz Bozdag
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH ONE-TIME PROGRAMMABLE (OTP) CELLS
- Publication number 20240321372
- Publication date Sep 26, 2024
- NXP USA, Inc.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Application
EFUSE UNIT AND APPLICATION CIRCUIT THEREOF
- Publication number 20240312544
- Publication date Sep 19, 2024
- Shanghai Huali Integrated Circuit Corporation
- Ying Yan
- G11 - INFORMATION STORAGE
Information Patent Application
EFUSE UNIT AND APPLICATION CIRCUIT THEREOF
- Publication number 20240312545
- Publication date Sep 19, 2024
- Shanghai Huali Integrated Circuit Corporation
- Ying YAN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THE SAME
- Publication number 20240290408
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gu-Huan LI
- G11 - INFORMATION STORAGE

Auxiliary circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory with one-time programmable (OTP) cells

One time programmable (OTP) low power circuits and methods for prov...

Non-volatile memory device including sense amplifier and method for...

Memory readout circuit and method

Anti-fuse device and method

One-time programmable bitcell for frontside and backside power inte...

Memory device with source line control

Memory devices and methods of manufacturing thereof

Multi-fuse memory cell circuit and method

Fuse link programming cell, programming circuit, control circuit, a...

Semiconductor memory devices with dielectric fin structures

Fuse circuits

Operating a memory unit using a low-power direct-current (DC) power...

One-time programmable fuse using thin film resistor layer, and rela...

One time programmable (OTP) magnetoresistive random-access memory (...

Non-volatile memory circuit and method

One-transistor (1T) one-time programmable (OTP) anti-fuse bitcell w...

Anti-fuse structure, anti-fuse array and memory

eFUSE programming feedback circuits and methods

Anti-fuse memory reading circuit with controllable reading time

Multiple stack high voltage circuit for memory

Bit selection for power reduction in stacking structure during memo...

Anti-fuse programming control circuit based on master-slave charge...

Anti-fuse readout circuit, anti-fuse memory, and testing method

Radiation hardened e-fuse macro

One time programmable bitcell with select device in isolated well

Anti-fuse array

Layout structure including anti-fuse cell

Voltage trimming circuit

Semiconductor device and method of operating the same

Patents Applicationslast 30 patents

Multibit High Density Read Only Memory Using Multiple Reference Biases

VERTICAL FUSE ARRAY ARCHITECTURE

METHOD FOR PHYSICALLY UNCLONABLE FUNCTION THROUGH GATE HEIGHT TUNING

SMALL-AREA COMMON-VOLTAGE ANTI-FUSE ARRAY

RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUF...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

RADIATION HARDENED E-FUSE MACRO

SEMICONDUCTOR DEVICE AND INKJET PRINTING ELEMENT SUBSTRATE

ONE-TIME-PROGRAMMABLE MEMORY DEVICES

ONE-TIME-PROGRAMMABLE MEMORY DEVICE

ONE TIME PROGRAMMING MEMORY INCLUDING FORKSHEET TRANSISTORS AND USI...

SEMICONDUCTOR INTEGRATED CIRCUIT

METAL FUSE STRUCTURE BY VIA LANDING

Bit Selection for Power Reduction in Stacking Structure During Memo...

Multiple Stack High Voltage Circuit for Memory

ANTI-FUSE DEVICE

MEMORY DEVICE FOR PERFORMING IN-MEMORY COMPUTATION AND OPERATING ME...

MEMORY DEVICE, INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME

LAYOUT STRUCTURE INCLUDING ANTI-FUSE CELL

ANTI-FUSE CIRCUIT AND ANTI-FUSE UNIT PROGRAMMING STATE VERIFICATION...

Electronic Device and Driving Method Thereof

MEMORY DEVICE AND METHODS

DIELECTRIC FILM BASED ONE-TIME PROGRAMMABLE (OTP) MEMORY CELL

DELAY ELEMENTS FOR COMMAND TIMING IN A MEMORY DEVICE

ONE TIME PROGRAMMING MEMORY CELL AND MEMORY ARRAY FOR PHYSICALLY UN...

ONE-TIME PROGRAMMABLE MEMORY DEVICES AND METHODS

MEMORY WITH ONE-TIME PROGRAMMABLE (OTP) CELLS

EFUSE UNIT AND APPLICATION CIRCUIT THEREOF

EFUSE UNIT AND APPLICATION CIRCUIT THEREOF

MEMORY DEVICE AND OPERATING METHOD OF THE SAME