being provided with a buffer layer

Industry

CPC
C30B25/183

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

Current Industry

C30B25/183being provided with a buffer layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for producing a nitride layer
- Patent number 12,134,836
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Matthew Charles
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing nitride semiconductor substrate, nitride s...
- Patent number 12,071,707
- Issue date Aug 27, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a GaN single crystal film on a buffer layer on a...
- Patent number 12,065,755
- Issue date Aug 20, 2024
- Haitao Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a mechanical vibrator comprising epitaxially g...
- Patent number 12,049,711
- Issue date Jul 30, 2024
- Nippon Telegraph and Telephone Corporation
- Koji Onomitsu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond crystal
- Patent number 12,024,792
- Issue date Jul 2, 2024
- Orbray Co., Ltd.
- Seongwoo Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Micro light emitting diode display panel with option of choosing to...
- Patent number 12,015,103
- Issue date Jun 18, 2024
- PlayNitride Display Co., Ltd.
- Yu-Yun Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium oxide film based on sapphire substrate as well as growth me...
- Patent number 11,996,288
- Issue date May 28, 2024
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF...
- Xiaodong Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a monocrystalline layer of GaAs material a...
- Patent number 11,976,380
- Issue date May 7, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor device and production method therefor
- Patent number 11,955,581
- Issue date Apr 9, 2024
- Toyoda Gosei Co., Ltd.
- Koji Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a monocrystalline layer of diamond or irid...
- Patent number 11,935,743
- Issue date Mar 19, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride semiconductor device
- Patent number 11,935,744
- Issue date Mar 19, 2024
- Sumitomo Electric Industries, Ltd.
- Isao Makabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor phosphor
- Patent number 11,898,078
- Issue date Feb 13, 2024
- Shin-Etsu Handotai Co., Ltd.
- Susumu Higuchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nucleation layer deposition method
- Patent number 11,887,848
- Issue date Jan 30, 2024
- Aixtron SE
- Christof Martin Mauder
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing nitride semiconductor substrate and nitrid...
- Patent number 11,873,578
- Issue date Jan 16, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a crystalline layer of PZT material by transfe...
- Patent number 11,877,514
- Issue date Jan 16, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device having a planar III-N semiconductor layer and...
- Patent number 11,862,459
- Issue date Jan 2, 2024
- HEXAGEM AB
- Jonas Ohlsson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride passivation layer for mercury cadmium telluride in...
- Patent number 11,851,785
- Issue date Dec 26, 2023
- Raytheon Company
- Andrew Clarke
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a monocrystalline layer of lithium niobate by...
- Patent number 11,828,000
- Issue date Nov 28, 2023
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diamond substrate and method for manufacturing the same
- Patent number 11,753,740
- Issue date Sep 12, 2023
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi Noguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices with an engineered substrate
- Patent number 11,735,460
- Issue date Aug 22, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group III nitride semiconductor substrate,...
- Patent number 11,680,339
- Issue date Jun 20, 2023
- Furukawa Co., Ltd.
- Yujiro Ishihara
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Superconducting compounds and methods for making the same
- Patent number 11,683,997
- Issue date Jun 20, 2023
- Quantum Designed Materials Ltd.
- Refael Gatt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28<...
- Patent number 11,624,126
- Issue date Apr 11, 2023
- OHIO STATE INNOVATION FOUNDATION
- Hongping Zhao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and structure of single crystal electronic devices with enha...
- Patent number 11,557,716
- Issue date Jan 17, 2023
- AKOUSTIS, INC.
- Shawn R. Gibb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a monocrystalline layer of GaAs material a...
- Patent number 11,549,195
- Issue date Jan 10, 2023
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 11,530,491
- Issue date Dec 20, 2022
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing GaN laminate substrate having front surface wh...
- Patent number 11,479,876
- Issue date Oct 25, 2022
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 (III) nitride thick layer formed on an underlying layer ha...
- Patent number 11,473,212
- Issue date Oct 18, 2022
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial structure of N-face group III nitride, active device, and...
- Patent number 11,469,308
- Issue date Oct 11, 2022
- Chih-Shu Huang
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379352
- Publication date Nov 14, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20240368804
- Publication date Nov 7, 2024
- Sumitomo Chemical Company, Limited
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240371628
- Publication date Nov 7, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...
- Publication number 20240304676
- Publication date Sep 12, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SUBSTRATE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240279842
- Publication date Aug 22, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEED SUBSTRATE FOR NITRIDE CRYSTAL GROWTH, PRODUCTION METHOD FOR NI...
- Publication number 20240271320
- Publication date Aug 15, 2024
- Sumitomo Chemical Company, Limited
- Masafumi YOKOYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
DEFORMATION COMPENSATION METHOD FOR GROWING THICK GALIUM NITRIDE ON...
- Publication number 20240263348
- Publication date Aug 8, 2024
- ROBERT BOSCH GmbH
- Bo CHENG
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
- Publication number 20240234141
- Publication date Jul 11, 2024
- KYOCERA CORPORATION
- Katsuaki MASAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PHASE STABILIZED GROWTH OF MONOCLINIC-GALLIUM OXIDE ON THERMALLY CO...
- Publication number 20240229293
- Publication date Jul 11, 2024
- University of South Carolina
- Iftikhar Ahmad
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
- Publication number 20240136181
- Publication date Apr 25, 2024
- KYOCERA CORPORATION
- Katsuaki MASAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAM...
- Publication number 20240112909
- Publication date Apr 4, 2024
- Panasonic Intellectual Property Management Co., Ltd.
- Hisayoshi MATSUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC HVPE OF COMPOSITIONALLY GRADED BUFFER LAYERS
- Publication number 20240084479
- Publication date Mar 14, 2024
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Kevin Louis SCHULTE
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
- Publication number 20240072198
- Publication date Feb 29, 2024
- KYOCERA CORPORATION
- Takeshi KAMIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A MONOCRYSTALLINE LAYER OF LITHIUM NIOBATE BY...
- Publication number 20240044043
- Publication date Feb 8, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING SINGLE CRYSTALS
- Publication number 20240035200
- Publication date Feb 1, 2024
- EBNER INDUSTRIEOFENBAU GMBH
- Robert EBNER
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, DEVICE AND METHOD OF M...
- Publication number 20240021671
- Publication date Jan 18, 2024
- Dynax Semiconductor, Inc.
- Hui ZHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A CRYSTALLINE LAYER OF PZT MATERIAL BY TRANSFE...
- Publication number 20230422619
- Publication date Dec 28, 2023
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230360910
- Publication date Nov 9, 2023
- GLOBALWAFERS CO., LTD.
- PO-JUNG LIN
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230360909
- Publication date Nov 9, 2023
- GLOBALWAFERS CO., LTD.
- PO-JUNG LIN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Superconducting Compounds and Methods for Making the Same
- Publication number 20230345845
- Publication date Oct 26, 2023
- Quantum Designed Materials Ltd.
- Refael Gatt
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR CVD DEPOSITION OF N-TYPE DOPED SILICON CARBIDE AND EPITA...
- Publication number 20230313410
- Publication date Oct 5, 2023
- LPE S.P.A.
- Silvio Preti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NITRIDE EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE
- Publication number 20230290742
- Publication date Sep 14, 2023
- HUAWEI TECHNOLOGIES CO., LTD.
- Zhibin Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE-DIAMETER SUBSTRATE FOR GROUP-III NITRIDE EPITAXIAL GROWTH AND...
- Publication number 20230257905
- Publication date Aug 17, 2023
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BASE SUBSTRATE FOR GROUP III-V COMPOUND CRYSTALS AND PRODUCTION MET...
- Publication number 20230250552
- Publication date Aug 10, 2023
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DIAMOND SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230250553
- Publication date Aug 10, 2023
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON
- Publication number 20230235480
- Publication date Jul 27, 2023
- THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
- Can Bayram
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LA...
- Publication number 20230160102
- Publication date May 25, 2023
- SOITEC
- Hugo Biard
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR...
- Publication number 20230154748
- Publication date May 18, 2023
- Shin-Etsu Handotai Co., Ltd.
- Miho NIITANI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND STRUCTURE OF SINGLE CRYSTAL ELECTRONIC DEVICES WITH ENHA...
- Publication number 20230123976
- Publication date Apr 20, 2023
- Akoustis, Inc.
- Shawn R. GIBB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING...
- Publication number 20230054861
- Publication date Feb 23, 2023
- Mitsubishi Electric Corporation
- Atsushi ERA
- C30 - CRYSTAL GROWTH

being provided with a buffer layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for producing a nitride layer

Nitride semiconductor template, method for manufacturing nitride se...

Method for manufacturing nitride semiconductor substrate, nitride s...

Method for growing a GaN single crystal film on a buffer layer on a...

Method for producing a mechanical vibrator comprising epitaxially g...

Diamond crystal

Micro light emitting diode display panel with option of choosing to...

Gallium oxide film based on sapphire substrate as well as growth me...

Method for manufacturing a monocrystalline layer of GaAs material a...

Group III nitride semiconductor device and production method therefor

Method for manufacturing a monocrystalline layer of diamond or irid...

Method for manufacturing nitride semiconductor device

Semiconductor phosphor

Nucleation layer deposition method

Method for manufacturing nitride semiconductor substrate and nitrid...

Method for producing a crystalline layer of PZT material by transfe...

Semiconductor device having a planar III-N semiconductor layer and...

Aluminum nitride passivation layer for mercury cadmium telluride in...

Method for producing a monocrystalline layer of lithium niobate by...

Diamond substrate and method for manufacturing the same

Integrated circuit devices with an engineered substrate

Method of manufacturing group III nitride semiconductor substrate,...

Superconducting compounds and methods for making the same

Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28<...

Method and structure of single crystal electronic devices with enha...

Method for manufacturing a monocrystalline layer of GaAs material a...

Silicon carbide epitaxial substrate and method for manufacturing si...

Method for producing GaN laminate substrate having front surface wh...

Group 13 (III) nitride thick layer formed on an underlying layer ha...

Epitaxial structure of N-face group III nitride, active device, and...

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...

DIAMOND SUBSTRATE AND METHOD FOR MANUFACTURING SAME

SEED SUBSTRATE FOR NITRIDE CRYSTAL GROWTH, PRODUCTION METHOD FOR NI...

DEFORMATION COMPENSATION METHOD FOR GROWING THICK GALIUM NITRIDE ON...

SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...

PHASE STABILIZED GROWTH OF MONOCLINIC-GALLIUM OXIDE ON THERMALLY CO...

SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...

NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAM...

DYNAMIC HVPE OF COMPOSITIONALLY GRADED BUFFER LAYERS

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE

METHOD FOR PRODUCING A MONOCRYSTALLINE LAYER OF LITHIUM NIOBATE BY...

METHOD FOR GROWING SINGLE CRYSTALS

EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, DEVICE AND METHOD OF M...

METHOD FOR PRODUCING A CRYSTALLINE LAYER OF PZT MATERIAL BY TRANSFE...

EPITAXIAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME

EPITAXIAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Superconducting Compounds and Methods for Making the Same

METHOD FOR CVD DEPOSITION OF N-TYPE DOPED SILICON CARBIDE AND EPITA...

NITRIDE EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE

LARGE-DIAMETER SUBSTRATE FOR GROUP-III NITRIDE EPITAXIAL GROWTH AND...

BASE SUBSTRATE FOR GROUP III-V COMPOUND CRYSTALS AND PRODUCTION MET...

DIAMOND SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON

METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LA...

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR...

METHOD AND STRUCTURE OF SINGLE CRYSTAL ELECTRONIC DEVICES WITH ENHA...

EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING...