TREA

Single-crystal growth by chemical reaction of reactive gases

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Industry

  • CPC
  • C30B25/00
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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D...

Current Industry

C30B25/00Single-crystal growth by chemical reaction of reactive gases

Sub Industries

C30B25/005Growth of whiskers or needles C30B25/02Epitaxial-layer growth C30B25/025Continuous growth C30B25/04Pattern deposit C30B25/06by reactive sputtering C30B25/08Reaction chambers Selection of material therefor C30B25/10Heating of the reaction chamber or the substrate C30B25/105by irradiation or electric discharge C30B25/12Substrate holders or susceptors C30B25/14Feed and outlet means for the gases Modifying the flow of the reactive gases C30B25/16Controlling or regulating C30B25/165the flow of the reactive gases C30B25/18characterised by the substrate C30B25/183being provided with a buffer layer C30B25/186being specially pre-treated by C30B25/20the substrate being of the same material as the epitaxial layer C30B25/205the substrate being of insulating material C30B25/22Sandwich processes
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