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Single-crystal growth by chemical reaction of reactive gases
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Industry
CPC
C30B25/00
This industry / category may be too specific. Please go to a parent level for more data
Parent Industries
C
CHEMISTRY METALLURGY
C30
Crystal growth
C30B
SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D...
Current Industry
C30B25/00
Single-crystal growth by chemical reaction of reactive gases
Sub Industries
C30B25/005
Growth of whiskers or needles
C30B25/02
Epitaxial-layer growth
C30B25/025
Continuous growth
C30B25/04
Pattern deposit
C30B25/06
by reactive sputtering
C30B25/08
Reaction chambers Selection of material therefor
C30B25/10
Heating of the reaction chamber or the substrate
C30B25/105
by irradiation or electric discharge
C30B25/12
Substrate holders or susceptors
C30B25/14
Feed and outlet means for the gases Modifying the flow of the reactive gases
C30B25/16
Controlling or regulating
C30B25/165
the flow of the reactive gases
C30B25/18
characterised by the substrate
C30B25/183
being provided with a buffer layer
C30B25/186
being specially pre-treated by
C30B25/20
the substrate being of the same material as the epitaxial layer
C30B25/205
the substrate being of insulating material
C30B25/22
Sandwich processes
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