between different crystalline phases

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H01L45/065

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/065between different crystalline phases

Industries

Patents Grantslast 30 patents

Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 11,706,934
- Issue date Jul 18, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 11,653,505
- Issue date May 16, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal programmable conducting bridges between conductive lines
- Patent number 11,640,937
- Issue date May 2, 2023
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device and method of programming a phase change...
- Patent number 11,462,269
- Issue date Oct 4, 2022
- STMicroelectronics S.r.l.
- Giovanni Campardo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell comprising a phase-change material
- Patent number 11,329,225
- Issue date May 10, 2022
- STMicroelectronics (Crolles 2) SAS
- Olivier Hinsinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 11,295,813
- Issue date Apr 5, 2022
- Zeno Semiconductor Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell
- Patent number 11,227,992
- Issue date Jan 18, 2022
- STMicroelectronics S.r.l.
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including liners comprising alucone and re...
- Patent number 11,223,014
- Issue date Jan 11, 2022
- Micron Technology, Inc.
- Zhe Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold switching contact in a field-effect transistor as a selector
- Patent number 11,152,429
- Issue date Oct 19, 2021
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and manufacturing method thereof
- Patent number 11,152,565
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analog nonvolatile memory cells using dopant activation
- Patent number 11,145,380
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Heng Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Horizontal programmable conducting bridges between conductive lines
- Patent number 11,069,616
- Issue date Jul 20, 2021
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change memory cell with vanadium oxide based switching layer
- Patent number 11,056,644
- Issue date Jul 6, 2021
- Huazhong University of Science & Technology
- Xiangshui Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned interconnection for integrated circuits
- Patent number 11,049,769
- Issue date Jun 29, 2021
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switch and method for fabricating the same, and resistive memory ce...
- Patent number 11,043,533
- Issue date Jun 22, 2021
- SK Hynix Inc.
- Beom Yong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Collimator, fabrication apparatus including the same, and method of...
- Patent number 11,017,989
- Issue date May 25, 2021
- Samsung Electronics Co., Ltd.
- Jiho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory apparatuses and methods of use
- Patent number 11,018,190
- Issue date May 25, 2021
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 10,950,663
- Issue date Mar 16, 2021
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystallized silicon vertical diode on BEOL for access device for c...
- Patent number 10,930,705
- Issue date Feb 23, 2021
- International Business Machines Corporation
- Fabio Carta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming silicon-containing dielectric materials and meth...
- Patent number 10,930,846
- Issue date Feb 23, 2021
- Micron Technology, Inc.
- Thomas R. Omstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including PCM RF switch integrated with group III-V semicond...
- Patent number 10,916,540
- Issue date Feb 9, 2021
- Newport Fab, LLC
- Nabil El-Hinnawy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory
- Patent number 10,903,423
- Issue date Jan 26, 2021
- STMicroelectronics (Crolles 2) SAS
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with independently-sized elements
- Patent number 10,886,332
- Issue date Jan 5, 2021
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 10,867,676
- Issue date Dec 15, 2020
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of manufacturing PCM RF switch
- Patent number 10,862,027
- Issue date Dec 8, 2020
- Newport Fab, LLC
- Gregory P. Slovin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change material (PCM) RF switch having contacts to PCM and he...
- Patent number 10,833,260
- Issue date Nov 10, 2020
- Newport Fab, LLC
- Jefferson E. Rose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change material (PCM) RF switch with top metal contact to hea...
- Patent number 10,833,261
- Issue date Nov 10, 2020
- Newport Fab, LLC
- Jefferson E. Rose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 10,825,867
- Issue date Nov 3, 2020
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change material (PCM) RF switch with contacts to PCM and heat...
- Patent number 10,804,462
- Issue date Oct 13, 2020
- Newport Fab, LLC
- Jefferson E. Rose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switch device and storage unit
- Patent number 10,804,321
- Issue date Oct 13, 2020
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Kazuhiro Ohba
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CROSSBAR MEMORY ARRAY IN FRONT END OF LINE
- Publication number 20230180642
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Devendra K. Sadana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES
- Publication number 20230180643
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL
- Publication number 20230129619
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH LOW FORMING VOLTAGE
- Publication number 20230051052
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE
- Publication number 20220399489
- Publication date Dec 15, 2022
- KIOXIA Corporation
- Kunifumi SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE CHANGE DEVICE AND STORAGE DEVICE
- Publication number 20220302385
- Publication date Sep 22, 2022
- KIOXIA Corporation
- Takao KOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20220199160
- Publication date Jun 23, 2022
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Two Dimensional Materials for Use in Ultra High Density Information...
- Publication number 20220085287
- Publication date Mar 17, 2022
- Northeastern University
- Zachariah Boston HENNIGHAUSEN
- B82 - NANO-TECHNOLOGY
Information Patent Application
DISPLAY MATERIAL
- Publication number 20220085290
- Publication date Mar 17, 2022
- BODLE TECHNOLOGIES LTD.
- PEIMAN HOSSEINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANALOG NONVOLATILE MEMORY CELLS USING DOPANT ACTIVATION
- Publication number 20210343358
- Publication date Nov 4, 2021
- International Business Machines Corporation
- Heng Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HORIZONTAL PROGRAMMABLE CONDUCTING BRIDGES BETWEEN CONDUCTIVE LINES
- Publication number 20210287980
- Publication date Sep 16, 2021
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductive Oxide Diffusion Barrier for Laser Crystallization
- Publication number 20210184113
- Publication date Jun 17, 2021
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE AND METHOD OF PROGRAMMING A PHASE CHANGE...
- Publication number 20210166757
- Publication date Jun 3, 2021
- STMicroelectronics S.r.l.
- Giovanni Campardo
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20210110872
- Publication date Apr 15, 2021
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20210036218
- Publication date Feb 4, 2021
- KIOXIA Corporation
- Hiroyuki ODE
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING DEVICE AND STORAGE UNIT, AND MEMORY SYSTEM
- Publication number 20210036221
- Publication date Feb 4, 2021
- Sony Semiconductor Solutions Corporation
- Kazuhiro OHBA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL COMPRISING A PHASE-CHANGE MATERIAL
- Publication number 20200403154
- Publication date Dec 24, 2020
- STMicroelectronics (Crolles 2) SAS
- Olivier HINSINGER
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL
- Publication number 20200381618
- Publication date Dec 3, 2020
- STMicroelectronics S.r.l
- Paolo Giuseppe CAPPELLETTI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY APPARATUSES AND METHODS OF USE
- Publication number 20200365659
- Publication date Nov 19, 2020
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL PROGRAMMABLE CONDUCTING BRIDGES BETWEEN CONDUCTIVE LINES
- Publication number 20200365507
- Publication date Nov 19, 2020
- TOKYO ELECTRON LIMITED
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA
- Publication number 20200335694
- Publication date Oct 22, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING DEVICES CONTAINING LITHIUM TITANATE, AND ASSOCI...
- Publication number 20200274065
- Publication date Aug 27, 2020
- Massachusetts Institute of Technology
- Jennifer Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS
- Publication number 20200144329
- Publication date May 7, 2020
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase-Change Material (PCM) RF Switch Having Contacts to PCM and He...
- Publication number 20200119265
- Publication date Apr 16, 2020
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Jefferson E. Rose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase-Change Material (PCM) RF Switch with Top Metal Contact to Hea...
- Publication number 20200119266
- Publication date Apr 16, 2020
- Newport Fab, LLC dba Jazz Semiconductor.
- Jefferson E. Rose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY
- Publication number 20200119269
- Publication date Apr 16, 2020
- STMicroelectronics (Crolles 2) SAS
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase-Change Material (PCM) RF Switch with Contacts to PCM and Heat...
- Publication number 20200111953
- Publication date Apr 9, 2020
- Newport Fab, LLC aba Jazz Semiconductor
- Jefferson E. Rose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR SINGLE-CRYSTAL PHASE CHANGE MATERIAL DEVICE
- Publication number 20200111955
- Publication date Apr 9, 2020
- International Business Machines Corporation
- Guy Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating Contacts in a Phase-Change Material (PCM) RF...
- Publication number 20200111952
- Publication date Apr 9, 2020
- Newport Fab, LLC dba Jazz Semiconductor.
- Jefferson E. Rose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELL
- Publication number 20200075848
- Publication date Mar 5, 2020
- HUAZHONG UNIVERSITY OF SCIENCE & TECHNOLOGY
- Xiangshui MIAO
- G11 - INFORMATION STORAGE

between different crystalline phases

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Cross-point memory array and related fabrication techniques

Cross-point memory array and related fabrication techniques

Horizontal programmable conducting bridges between conductive lines

Phase change memory device and method of programming a phase change...

Memory cell comprising a phase-change material

Semiconductor memory having both volatile and non-volatile function...

Memory cell

Semiconductor structures including liners comprising alucone and re...

Threshold switching contact in a field-effect transistor as a selector

Memory device and manufacturing method thereof

Analog nonvolatile memory cells using dopant activation

Horizontal programmable conducting bridges between conductive lines

Phase-change memory cell with vanadium oxide based switching layer

Self-aligned interconnection for integrated circuits

Switch and method for fabricating the same, and resistive memory ce...

Collimator, fabrication apparatus including the same, and method of...

Three-dimensional memory apparatuses and methods of use

Cross-point memory array and related fabrication techniques

Crystallized silicon vertical diode on BEOL for access device for c...

Methods of forming silicon-containing dielectric materials and meth...

Device including PCM RF switch integrated with group III-V semicond...

Phase change memory

Memory cell with independently-sized elements

Semiconductor memory having both volatile and non-volatile function...

Method of manufacturing PCM RF switch

Phase-change material (PCM) RF switch having contacts to PCM and he...

Phase-change material (PCM) RF switch with top metal contact to hea...

Cross-point memory array and related fabrication techniques

Phase-change material (PCM) RF switch with contacts to PCM and heat...

Switch device and storage unit

Patents Applicationslast 30 patents

CROSSBAR MEMORY ARRAY IN FRONT END OF LINE

DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES

CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL

BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH LOW FORMING VOLTAGE

STORAGE DEVICE

RESISTANCE CHANGE DEVICE AND STORAGE DEVICE

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

Two Dimensional Materials for Use in Ultra High Density Information...

DISPLAY MATERIAL

ANALOG NONVOLATILE MEMORY CELLS USING DOPANT ACTIVATION

HORIZONTAL PROGRAMMABLE CONDUCTING BRIDGES BETWEEN CONDUCTIVE LINES

Conductive Oxide Diffusion Barrier for Laser Crystallization

PHASE CHANGE MEMORY DEVICE AND METHOD OF PROGRAMMING A PHASE CHANGE...

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

SEMICONDUCTOR MEMORY DEVICE

SWITCHING DEVICE AND STORAGE UNIT, AND MEMORY SYSTEM

MEMORY CELL COMPRISING A PHASE-CHANGE MATERIAL

MEMORY CELL

THREE-DIMENSIONAL MEMORY APPARATUSES AND METHODS OF USE

HORIZONTAL PROGRAMMABLE CONDUCTING BRIDGES BETWEEN CONDUCTIVE LINES

RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA

RESISTIVE SWITCHING DEVICES CONTAINING LITHIUM TITANATE, AND ASSOCI...

MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS

Phase-Change Material (PCM) RF Switch Having Contacts to PCM and He...

Phase-Change Material (PCM) RF Switch with Top Metal Contact to Hea...

PHASE CHANGE MEMORY

Phase-Change Material (PCM) RF Switch with Contacts to PCM and Heat...

PLANAR SINGLE-CRYSTAL PHASE CHANGE MATERIAL DEVICE

Method for Fabricating Contacts in a Phase-Change Material (PCM) RF...

PHASE-CHANGE MEMORY CELL