Bipolar electrically programmable memory structures

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H01L27/1026

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/1026Bipolar electrically programmable memory structures

Industries

Patents Grantslast 30 patents

Information Patent Grant
Transistor device
- Patent number 11,664,718
- Issue date May 30, 2023
- Know Moore, Ltd.
- David Summerland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic fuse (e-fuse) cells integrated with bipolar device
- Patent number 11,322,497
- Issue date May 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yves T. Ngu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,201,192
- Issue date Dec 14, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,183,538
- Issue date Nov 23, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated bipolar junction transistors, memory arrays, and methods of f...
- Patent number 10,886,273
- Issue date Jan 5, 2021
- Micron Technology, Inc.
- Rajesh N. Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated diode memory cells
- Patent number 10,797,053
- Issue date Oct 6, 2020
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming a memory structure
- Patent number 10,693,063
- Issue date Jun 23, 2020
- Micron Technology, Inc.
- Andrew J. Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 10,636,843
- Issue date Apr 28, 2020
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory system
- Patent number 10,431,317
- Issue date Oct 1, 2019
- NXP B.V.
- Antonius Martinus Jacobus Daanen
- G11 - INFORMATION STORAGE
Information Patent Grant
Gated bipolar junction transistors, memory arrays, and methods of f...
- Patent number 10,373,956
- Issue date Aug 6, 2019
- Micron Technology, Inc.
- Rajesh N. Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One time programmable memory cell and memory array
- Patent number 10,276,494
- Issue date Apr 30, 2019
- Infineon Technologies AG
- Kerstin Kaemmer
- G11 - INFORMATION STORAGE
Information Patent Grant
Gated diode memory cells
- Patent number 10,276,576
- Issue date Apr 30, 2019
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 10,263,040
- Issue date Apr 16, 2019
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-fuse nonvolatile memory devices employing lateral bipolar junc...
- Patent number 10,115,729
- Issue date Oct 30, 2018
- SK Hynix Inc.
- Kwang II Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 9,941,333
- Issue date Apr 10, 2018
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device, method for manufacturing same, and nonvolatil...
- Patent number 9,653,478
- Issue date May 16, 2017
- Hitachi, Ltd.
- Digh Hisamoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of a deep trench memory cell
- Patent number 9,379,116
- Issue date Jun 28, 2016
- GLOBALFOUNDRIES, INC.
- Byeong Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with trimming
- Patent number 9,331,086
- Issue date May 3, 2016
- NXP B.V.
- Wibo D. Van Noort
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuits with electronic fuse structures
- Patent number 9,324,654
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES, INC.
- Ricardo Mikalo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing same, and nonvolatil...
- Patent number 9,209,171
- Issue date Dec 8, 2015
- Hitachi, Ltd.
- Digh Hisamoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method for making same
- Patent number 9,041,084
- Issue date May 26, 2015
- Infineon Technologies AG
- Armin Tilke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 8,999,781
- Issue date Apr 7, 2015
- Winbond Electronics Corp.
- Wen-Yueh Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated bipolar junction transistors
- Patent number 8,952,418
- Issue date Feb 10, 2015
- Micron Technology, Inc.
- Rajesh N. Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon pillar bipolar transistor with self-aligned memory element
- Patent number 8,933,536
- Issue date Jan 13, 2015
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors, memory arrays, and methods of forming...
- Patent number 8,889,520
- Issue date Nov 18, 2014
- Micron Technology, Inc.
- Federica Ottogalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable bipolar electronic device
- Patent number 8,787,064
- Issue date Jul 22, 2014
- Hewlett-Packard Development Company, L.P.
- Theodore I. Kamins
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method for making same
- Patent number 8,476,686
- Issue date Jul 2, 2013
- Infineon Technologies AG
- Armin Tilke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 8,421,127
- Issue date Apr 16, 2013
- Windbond Electronics Corp.
- Wen-Yueh Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unified switch array for memory devices
- Patent number 8,378,456
- Issue date Feb 19, 2013
- Contour Semiconductor, Inc.
- Daniel Robert Shepard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon plug bipolar transistor for phase change memory
- Patent number 8,237,144
- Issue date Aug 7, 2012
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
A TRANSISTOR DEVICE
- Publication number 20210036598
- Publication date Feb 4, 2021
- David SUMMERLAND
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210013263
- Publication date Jan 14, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun JEONG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200227481
- Publication date Jul 16, 2020
- Samsung Electronics Co., Ltd.
- Ji-hyun JEONG
- G11 - INFORMATION STORAGE
Information Patent Application
Gated Bipolar Junction Transistors, Memory Arrays, and Methods of F...
- Publication number 20190296016
- Publication date Sep 26, 2019
- Micron Technology, Inc.
- Rajesh N. Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED DIODE MEMORY CELLS
- Publication number 20190252384
- Publication date Aug 15, 2019
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190189692
- Publication date Jun 20, 2019
- Samsung Electronics Co., Ltd.
- Ji-hyun JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SYSTEM
- Publication number 20190074071
- Publication date Mar 7, 2019
- NXP B.V.
- Antonius Martinus Jacobus Daanen
- G11 - INFORMATION STORAGE
Information Patent Application
GATED DIODE MEMORY CELLS
- Publication number 20190013316
- Publication date Jan 10, 2019
- Micron Technology, Inc.
- Arup Bhattacharyya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180190718
- Publication date Jul 5, 2018
- Samsung Electronics Co., Ltd.
- Ji-hyun JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE TIME PROGRAMMABLE MEMORY CELL AND MEMORY ARRAY
- Publication number 20180061756
- Publication date Mar 1, 2018
- INFINEON TECHNOLOGIES AG
- Kerstin Kaemmer
- G11 - INFORMATION STORAGE
Information Patent Application
Gated Bipolar Junction Transistors, Memory Arrays, and Methods of F...
- Publication number 20150155283
- Publication date Jun 4, 2015
- Micron Technology, Inc.
- Rajesh N. Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Junction Transistors, Memory Arrays, and Methods of Forming...
- Publication number 20140273390
- Publication date Sep 18, 2014
- Micron Technology, Inc.
- Federica Ottogalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED VERTICAL NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- Publication number 20140167134
- Publication date Jun 19, 2014
- Fudan University
- Pengfei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device And Method For Making Same
- Publication number 20140154857
- Publication date Jun 5, 2014
- Armin TILKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND NONVOLATIL...
- Publication number 20130341729
- Publication date Dec 26, 2013
- Digh Hisamoto
- G11 - INFORMATION STORAGE
Information Patent Application
Bipolar Junction Transistors, Memory Arrays, and Methods of Forming...
- Publication number 20130234102
- Publication date Sep 12, 2013
- Micron Technology, Inc.
- Federica Ottogalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20130217193
- Publication date Aug 22, 2013
- WINBOND ELECTRONICS CORP.
- Wen-Yueh Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20130015508
- Publication date Jan 17, 2013
- WINBOND ELECTRONICS CORP.
- Wen-Yueh Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gated Bipolar Junction Transistors, Memory Arrays, and Methods of F...
- Publication number 20120223369
- Publication date Sep 6, 2012
- Micron Technology, Inc.
- Rajesh N. Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded Semiconductor Device Including Phase Changeable Random Acc...
- Publication number 20120214262
- Publication date Aug 23, 2012
- SAMSUNG ELECTRONICS CO., LTD.
- Teakwang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon Plug Bipolar Transistor For Phase Change Memory
- Publication number 20120018845
- Publication date Jan 26, 2012
- International Business Machines Corporation
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable Bipolar Electronic Device
- Publication number 20110228592
- Publication date Sep 22, 2011
- Theodore I. Kamins
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT
- Publication number 20110186919
- Publication date Aug 4, 2011
- NXP B.V.
- Wibo D. Van Noort
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
POLYSILICON PILLAR BIPOLAR TRANSISTOR WITH SELF-ALIGNED MEMORY ELEMENT
- Publication number 20100181649
- Publication date Jul 22, 2010
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON PLUG BIPOLAR TRANSISTOR FOR PHASE CHANGE MEMORY
- Publication number 20100176362
- Publication date Jul 15, 2010
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device And Method For Making Same
- Publication number 20100008122
- Publication date Jan 14, 2010
- INFINEON TECHNOLOGIES AG
- Armin Tilke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Nonvolatile Memory Cell, Array, and Operation
- Publication number 20080117677
- Publication date May 22, 2008
- Macronix International Co., Ltd.
- Tien Fan Ou
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND METHOD OF MANUFACTURING A MEMORY CELL
- Publication number 20080111188
- Publication date May 15, 2008
- Chien-Li Kuo
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND METHOD OF MANUFACTURING A MEMORY CELL
- Publication number 20070257326
- Publication date Nov 8, 2007
- Chien-Li Kuo
- G11 - INFORMATION STORAGE

Bipolar electrically programmable memory structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Transistor device

Electronic fuse (e-fuse) cells integrated with bipolar device

Memory device and method of manufacturing the same

Memory device and method of manufacturing the same

Gated bipolar junction transistors, memory arrays, and methods of f...

Gated diode memory cells

Methods of forming a memory structure

Memory device and method of manufacturing the same

Memory system

Gated bipolar junction transistors, memory arrays, and methods of f...

One time programmable memory cell and memory array

Gated diode memory cells

Memory device and method of manufacturing the same

Anti-fuse nonvolatile memory devices employing lateral bipolar junc...

Memory device and method of manufacturing the same

Semiconductor device, method for manufacturing same, and nonvolatil...

Fabrication of a deep trench memory cell

Integrated circuit with trimming

Integrated circuits with electronic fuse structures

Semiconductor device, method for manufacturing same, and nonvolatil...

Memory device and method for making same

Method for fabricating semiconductor device

Gated bipolar junction transistors

Polysilicon pillar bipolar transistor with self-aligned memory element

Bipolar junction transistors, memory arrays, and methods of forming...

Programmable bipolar electronic device

Memory device and method for making same

Semiconductor device and method for fabricating the same

Unified switch array for memory devices

Polysilicon plug bipolar transistor for phase change memory

Patents Applicationslast 30 patents

A TRANSISTOR DEVICE

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Gated Bipolar Junction Transistors, Memory Arrays, and Methods of F...

GATED DIODE MEMORY CELLS

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MEMORY SYSTEM

GATED DIODE MEMORY CELLS

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

ONE TIME PROGRAMMABLE MEMORY CELL AND MEMORY ARRAY

Gated Bipolar Junction Transistors, Memory Arrays, and Methods of F...

Bipolar Junction Transistors, Memory Arrays, and Methods of Forming...

SELF-ALIGNED VERTICAL NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

Memory Device And Method For Making Same

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND NONVOLATIL...

Bipolar Junction Transistors, Memory Arrays, and Methods of Forming...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Gated Bipolar Junction Transistors, Memory Arrays, and Methods of F...

Embedded Semiconductor Device Including Phase Changeable Random Acc...

Polysilicon Plug Bipolar Transistor For Phase Change Memory

Programmable Bipolar Electronic Device

INTEGRATED CIRCUIT

POLYSILICON PILLAR BIPOLAR TRANSISTOR WITH SELF-ALIGNED MEMORY ELEMENT

POLYSILICON PLUG BIPOLAR TRANSISTOR FOR PHASE CHANGE MEMORY

Memory Device And Method For Making Same

Vertical Nonvolatile Memory Cell, Array, and Operation

INTEGRATED CIRCUIT STRUCTURE AND METHOD OF MANUFACTURING A MEMORY CELL

INTEGRATED CIRCUIT STRUCTURE AND METHOD OF MANUFACTURING A MEMORY CELL