Bistable or multistable switching devices

Industry

CPC
H01L45/04

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/04Bistable or multistable switching devices

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices comprising threshold switching materials
- Patent number 11,672,191
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to produce 3D semiconductor devices and structures with memory
- Patent number 11,600,667
- Issue date Mar 7, 2023
- Monolithic 3D Inc.
- Deepak C. Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including vertical routing structure and metho...
- Patent number 11,569,226
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Chih Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capped contact structure with variable adhesion layer thickness
- Patent number 11,569,445
- Issue date Jan 31, 2023
- Macronix International Co., Ltd.
- Yu-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including phase change material layers...
- Patent number 11,563,056
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,557,344
- Issue date Jan 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Der Chih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Correlated electron device formed via conversion of conductive subs...
- Patent number 11,522,133
- Issue date Dec 6, 2022
- CERFE LABS, INC.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transflective, PCM-based display device
- Patent number 11,520,172
- Issue date Dec 6, 2022
- E Ink Corporation
- Harish Bhaskaran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D vertical memory array cell structures with individual selectors...
- Patent number 11,522,016
- Issue date Dec 6, 2022
- Fu-Chang Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices including a passive material between memory c...
- Patent number 11,515,358
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 11,502,249
- Issue date Nov 15, 2022
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,495,295
- Issue date Nov 8, 2022
- Kioxia Corporation
- Yoshiaki Asao
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit devices and methods of manufacturing same
- Patent number 11,482,285
- Issue date Oct 25, 2022
- Samsung Electronics Co., Ltd.
- Sung-woo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to produce 3D semiconductor devices and structures with memory
- Patent number 11,469,271
- Issue date Oct 11, 2022
- Monolithic 3D Inc.
- Deepak C. Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to produce 3D semiconductor devices and structures with memory
- Patent number 11,462,586
- Issue date Oct 4, 2022
- Monolithic 3D Inc.
- Deepak C. Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with memory cells
- Patent number 11,462,552
- Issue date Oct 4, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating correlated electron material (CEM) devices
- Patent number 11,450,804
- Issue date Sep 20, 2022
- CERFE LABS, INC.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,430,953
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huei-Tsz Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with conductive etch-stop layer
- Patent number 11,430,956
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Chyi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neural network circuit
- Patent number 11,423,294
- Issue date Aug 23, 2022
- Denso Corporation
- Shigeki Otsuka
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive random access memory device
- Patent number 11,411,178
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of cross point memory cells
- Patent number 11,393,978
- Issue date Jul 19, 2022
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection devices using carbon-based diodes
- Patent number 11,387,277
- Issue date Jul 12, 2022
- Nantero, Inc.
- Claude L. Bertin
- G11 - INFORMATION STORAGE
Information Patent Grant
Logic compatible RRAM structure and process
- Patent number 11,387,411
- Issue date Jul 12, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AI fusion pixel sensor using memristors
- Patent number 11,388,356
- Issue date Jul 12, 2022
- TetraMem Inc.
- Wenbo Yin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Selector devices
- Patent number 11,374,056
- Issue date Jun 28, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing same
- Patent number 11,355,705
- Issue date Jun 7, 2022
- Kioxia Corporation
- Kotaro Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell and memory device comprising selection device layer, mi...
- Patent number 11,349,074
- Issue date May 31, 2022
- Samsung Electronics Co., Ltd.
- Ji-Hyun Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vanadium dioxide heterostructures having an isostructural metal-ins...
- Patent number 11,335,781
- Issue date May 17, 2022
- Wisconsin Alumni Research Foundation
- Chang-Beom Eom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with transistors
- Patent number 11,335,731
- Issue date May 17, 2022
- Monolithic 3D Inc.
- Deepak C. Sekar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...
- Publication number 20240172454
- Publication date May 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20230113903
- Publication date Apr 13, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Yu-Der CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSFLECTIVE, PCM-BASED DISPLAY DEVICE
- Publication number 20230070453
- Publication date Mar 9, 2023
- E INK CORPORATION
- Harish BHASKARAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES INCLUDING A PASSIVE MATERIAL BETWEEN MEMORY CELLS AND CONDU...
- Publication number 20230029529
- Publication date Feb 2, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE
- Publication number 20230032616
- Publication date Feb 2, 2023
- KIOXIA Corporation
- Yoshiaki ASAO
- G11 - INFORMATION STORAGE
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20220376175
- Publication date Nov 24, 2022
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Huei-Tsz WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20220344585
- Publication date Oct 27, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Chun-Chieh MO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20220263024
- Publication date Aug 18, 2022
- KIOXIA Corporation
- Kotaro NODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE
- Publication number 20220262436
- Publication date Aug 18, 2022
- KIOXIA Corporation
- Yoshiaki ASAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR DEVICES
- Publication number 20220262860
- Publication date Aug 18, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20220246838
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERNARY CONTENT ADDRESSABLE MEMORY BASED ON MEMORY DIODE
- Publication number 20220215882
- Publication date Jul 7, 2022
- Zhejiang University
- Yi ZHAO
- G11 - INFORMATION STORAGE
Information Patent Application
SYNAPTIC MECHANOTRANSISTORS
- Publication number 20220164640
- Publication date May 26, 2022
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Do Hwan KIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Arrays of Memory Cells and Methods of Forming an Array of Verticall...
- Publication number 20220157888
- Publication date May 19, 2022
- Micron Technology, Inc.
- Zengtao T. Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Switching Random Access Memory with Asymmetric Source and...
- Publication number 20220157889
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Chieh YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20220149276
- Publication date May 12, 2022
- KIOXIA Corporation
- Kenichi MUROOKA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH COMPOSITE SPACER
- Publication number 20220131072
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fu-Ting SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20220093175
- Publication date Mar 24, 2022
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM MEMORY CELL WITH MULTIPLE FILAMENTS
- Publication number 20220093687
- Publication date Mar 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Chieh Yang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...
- Publication number 20220093849
- Publication date Mar 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...
- Publication number 20220085280
- Publication date Mar 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECTION FOR MEMORY ELECTRODES
- Publication number 20220084560
- Publication date Mar 17, 2022
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210351235
- Publication date Nov 11, 2021
- Toshiba Memory Corporation
- Masahiro Kiyotoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS
- Publication number 20210313339
- Publication date Oct 7, 2021
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20210280245
- Publication date Sep 9, 2021
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Yu-Der CHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERNARY CONTENT ADDRESSABLE MEMORY BASED ON MEMORY DIODE
- Publication number 20210241831
- Publication date Aug 5, 2021
- ZHEJIANG UNIVERSITY
- Yi ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spintronic Computing Architecture and Method
- Publication number 20210232903
- Publication date Jul 29, 2021
- Board of Regents, The University of Texas System
- Joseph S. Friedman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TWO-TERMINAL METASTABLE MIXED-CONDUCTOR MEMRISTIVE DEVICES
- Publication number 20210209445
- Publication date Jul 8, 2021
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE DIMENSIONAL MEMORY ARRAYS
- Publication number 20210183947
- Publication date Jun 17, 2021
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20210159113
- Publication date May 27, 2021
- Samsung Electronics Co., Ltd.
- Byoungdeog Choi
- H01 - BASIC ELECTRIC ELEMENTS

Bistable or multistable switching devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices comprising threshold switching materials

Method to produce 3D semiconductor devices and structures with memory

Semiconductor device including vertical routing structure and metho...

Capped contact structure with variable adhesion layer thickness

Semiconductor memory device including phase change material layers...

Resistive random access memory device

Correlated electron device formed via conversion of conductive subs...

Transflective, PCM-based display device

3D vertical memory array cell structures with individual selectors...

Semiconductor devices including a passive material between memory c...

Memory element with a reactive metal layer

Variable resistance memory device

Integrated circuit devices and methods of manufacturing same

Method to produce 3D semiconductor devices and structures with memory

Method to produce 3D semiconductor devices and structures with memory

Semiconductor devices with memory cells

Fabricating correlated electron material (CEM) devices

Resistive random access memory device

RRAM cell structure with conductive etch-stop layer

Neural network circuit

Resistive random access memory device

Array of cross point memory cells

Electrostatic discharge protection devices using carbon-based diodes

Logic compatible RRAM structure and process

AI fusion pixel sensor using memristors

Selector devices

Semiconductor memory device and method for manufacturing same

Memory cell and memory device comprising selection device layer, mi...

Vanadium dioxide heterostructures having an isostructural metal-ins...

3D semiconductor device and structure with transistors

Patents Applicationslast 30 patents

CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...

RESISTIVE RANDOM ACCESS MEMORY DEVICE

TRANSFLECTIVE, PCM-BASED DISPLAY DEVICE

DEVICES INCLUDING A PASSIVE MATERIAL BETWEEN MEMORY CELLS AND CONDU...

VARIABLE RESISTANCE MEMORY DEVICE

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

VARIABLE RESISTANCE MEMORY DEVICE

SELECTOR DEVICES

MEMORY DEVICE

TERNARY CONTENT ADDRESSABLE MEMORY BASED ON MEMORY DIODE

SYNAPTIC MECHANOTRANSISTORS

Arrays of Memory Cells and Methods of Forming an Array of Verticall...

Resistive Switching Random Access Memory with Asymmetric Source and...

SEMICONDUCTOR MEMORY DEVICE

MEMORY DEVICE WITH COMPOSITE SPACER

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

RRAM MEMORY CELL WITH MULTIPLE FILAMENTS

METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...

METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...

INTERCONNECTION FOR MEMORY ELECTRODES

SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS

RESISTIVE RANDOM ACCESS MEMORY DEVICE

TERNARY CONTENT ADDRESSABLE MEMORY BASED ON MEMORY DIODE

Spintronic Computing Architecture and Method

TWO-TERMINAL METASTABLE MIXED-CONDUCTOR MEMRISTIVE DEVICES

THREE DIMENSIONAL MEMORY ARRAYS

METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES