Boron nitride semiconductor

Industry

CPC
Y10S438/932

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

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Y10S438/932Boron nitride semiconductor

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Silane or borane treatment of metal thin films
- Patent number 9,111,749
- Issue date Aug 18, 2015
- ASM IP HOLDINGS B.V.
- Eric Shero
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Hardmask materials
- Patent number 8,846,525
- Issue date Sep 30, 2014
- Novellus Systems, Inc.
- Vishwanathan Rangarajan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silane or borane treatment of metal thin films
- Patent number 8,846,550
- Issue date Sep 30, 2014
- ASM IP Holding B.V.
- Eric Shero
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Hardmask materials
- Patent number 8,536,073
- Issue date Sep 17, 2013
- Novellus Systems, Inc.
- Vishwanathan Rangarajan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Hardmask materials
- Patent number 8,247,332
- Issue date Aug 21, 2012
- Novellus Systems, Inc.
- Vishwanathan Rangarajan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
In situ deposition of a low κ dielectric layer, barrier layer, etch...
- Patent number 7,670,945
- Issue date Mar 2, 2010
- Applied Materials, Inc.
- Judy H. Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Incorporation of nitrogen into high k dielectric film
- Patent number 7,569,284
- Issue date Aug 4, 2009
- ASM America, Inc.
- Eric J. Shero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
In situ deposition of a low K dielectric layer, barrier layer, etch...
- Patent number 7,470,611
- Issue date Dec 30, 2008
- Applied Materials, Inc.
- Judy H. Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Incorporation of nitrogen into high k dielectric film
- Patent number 7,405,453
- Issue date Jul 29, 2008
- ASM America, Inc.
- Eric J. Shero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming barrier layers
- Patent number 7,101,779
- Issue date Sep 5, 2006
- Micron, Technology, Inc.
- Brian A. Vaartstra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for non-aggressive plasma-enhanced vapor depos...
- Patent number 7,056,842
- Issue date Jun 6, 2006
- Alcatel
- Christophe Jany
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
In situ deposition of a low κ dielectric layer, barrier layer, etch...
- Patent number 6,974,766
- Issue date Dec 13, 2005
- Applied Materials, Inc.
- Judy H. Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Incorporation of nitrogen into high k dielectric film
- Patent number 6,960,537
- Issue date Nov 1, 2005
- ASM America, Inc.
- Eric J. Shero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods and devices using group III nitride compound semiconductor
- Patent number 6,881,651
- Issue date Apr 19, 2005
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed metal nitride and boride barrier layers
- Patent number 6,664,159
- Issue date Dec 16, 2003
- Micron Technology, Inc.
- Brian A. Vaartstra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices using group III nitride compound semiconductor
- Patent number 6,617,668
- Issue date Sep 9, 2003
- Toyoda Gosei Co., Ltd
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed metal nitride and boride barrier layers
- Patent number 6,445,023
- Issue date Sep 3, 2002
- Micron Technology, Inc.
- Brian A. Vaartstra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming heterojunction bipolar transistors
- Patent number 5,624,853
- Issue date Apr 29, 1997
- Sumitomo Electric Industries, Ltd.
- Shinichi Shikata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 5,536,952
- Issue date Jul 16, 1996
- Sumitomo Electric Industries, Ltd.
- Shinichi Shikata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contact electrodes for N-type semiconductor cubic boron nitride
- Patent number 5,422,500
- Issue date Jun 6, 1995
- Sumitomo Electric Industries, Ltd.
- Tadashi Tomikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cubic boron nitride phosphide films
- Patent number 5,326,424
- Issue date Jul 5, 1994
- General Motors Corporation
- Gary L. Doll
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming ohmic contact electrodes for n-type semiconductor...
- Patent number 5,298,461
- Issue date Mar 29, 1994
- Sumitomo Electric Industries, Ltd.
- Tadashi Tomikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contact electrodes for n-type semiconductor cubic boron nitride
- Patent number 5,285,109
- Issue date Feb 8, 1994
- Sumitomo Electric Industries, Ltd.
- Tadashi Tomikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a cubic boron nitride bipolar transistor
- Patent number 5,227,318
- Issue date Jul 13, 1993
- General Motors Corporation
- Gary L. Doll
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing an electronic device
- Patent number 5,225,367
- Issue date Jul 6, 1993
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing electric devices
- Patent number 5,196,366
- Issue date Mar 23, 1993
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Converting ceramic materials to electrical conductors and semicondu...
- Patent number 5,145,741
- Issue date Sep 8, 1992
- Nathaniel R. Quick
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Electric device and manufacturing method of the same
- Patent number 5,139,970
- Issue date Aug 18, 1992
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a transistor having cubic boron nitride layer
- Patent number 5,081,053
- Issue date Jan 14, 1992
- General Motors Corporation
- Joseph P. Heremans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing ohmic electrode for p-type cubic system boron...
- Patent number 5,057,454
- Issue date Oct 15, 1991
- Sumitomo Electric Industries, Ltd.
- Katsuhito Yoshida
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILANE OR BORANE TREATMENT OF METAL THIN FILMS
- Publication number 20140295673
- Publication date Oct 2, 2014
- Eric Shero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILANE OR BORANE TREATMENT OF METAL THIN FILMS
- Publication number 20140273428
- Publication date Sep 18, 2014
- ASM IP HOLDING B.V.
- Eric Shero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HARDMASK MATERIALS
- Publication number 20130330932
- Publication date Dec 12, 2013
- Novellus Systems, Inc.
- Vishwanathan Rangarajan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HARDMASK MATERIALS
- Publication number 20120276752
- Publication date Nov 1, 2012
- Vishwanathan Rangarajan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HARDMASK MATERIALS
- Publication number 20110135557
- Publication date Jun 9, 2011
- Vishwanathan Rangarajan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IN SITU DEPOSITION OF A LOW K DIELECTRIC LAYER, BARRIER LAYER, ETCH...
- Publication number 20090130837
- Publication date May 21, 2009
- APPLIED MATERIALS, INC.
- Judy H. Huang
- C30 - CRYSTAL GROWTH
Information Patent Application
INCORPORATION OF NITROGEN INTO HIGH K DIELECTRIC FILM
- Publication number 20080286589
- Publication date Nov 20, 2008
- ASM AMERICA, INC
- Eric J. Shero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Mixed metal nitride and boride barrier layers
- Publication number 20070045856
- Publication date Mar 1, 2007
- Brian A. Vaartstra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for non-aggressive plasma-enhanced vapor depos...
- Publication number 20060189165
- Publication date Aug 24, 2006
- ALCATEL
- Christophe Jany
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
In situ deposition of a low K dielectric layer, barrier layer, etch...
- Publication number 20060089007
- Publication date Apr 27, 2006
- APPLIED MATERIALS, INC.
- Judy H. Huang
- C30 - CRYSTAL GROWTH
Information Patent Application
Incorporation of nitrogen into high k dielectric film
- Publication number 20050212119
- Publication date Sep 29, 2005
- Eric J. Shero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and apparatus for non-aggressive plasma-enhanced vapor depos...
- Publication number 20050026404
- Publication date Feb 3, 2005
- ALCATEL
- Christophe Jany
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming barrier layers
- Publication number 20040053495
- Publication date Mar 18, 2004
- Brian A. Vaartstra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and devices using group III nitride compound semiconductor
- Publication number 20030155586
- Publication date Aug 21, 2003
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- C30 - CRYSTAL GROWTH
Information Patent Application
Incorporation of nitrogen into high k dielectric film
- Publication number 20030072975
- Publication date Apr 17, 2003
- Eric J. Shero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Mixed metal nitride and boride barrier layers
- Publication number 20020163025
- Publication date Nov 7, 2002
- Brian A. Vaartstra
- H01 - BASIC ELECTRIC ELEMENTS

Boron nitride semiconductor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silane or borane treatment of metal thin films

Hardmask materials

Silane or borane treatment of metal thin films

Hardmask materials

Hardmask materials

In situ deposition of a low κ dielectric layer, barrier layer, etch...

Incorporation of nitrogen into high k dielectric film

In situ deposition of a low K dielectric layer, barrier layer, etch...

Incorporation of nitrogen into high k dielectric film

Method of forming barrier layers

Method and apparatus for non-aggressive plasma-enhanced vapor depos...

In situ deposition of a low κ dielectric layer, barrier layer, etch...

Incorporation of nitrogen into high k dielectric film

Methods and devices using group III nitride compound semiconductor

Mixed metal nitride and boride barrier layers

Methods and devices using group III nitride compound semiconductor

Mixed metal nitride and boride barrier layers

Method for forming heterojunction bipolar transistors

Heterojunction bipolar transistor

Ohmic contact electrodes for N-type semiconductor cubic boron nitride

Cubic boron nitride phosphide films

Method of forming ohmic contact electrodes for n-type semiconductor...

Ohmic contact electrodes for n-type semiconductor cubic boron nitride

Method of making a cubic boron nitride bipolar transistor

Method for manufacturing an electronic device

Method of manufacturing electric devices

Converting ceramic materials to electrical conductors and semicondu...

Electric device and manufacturing method of the same

Method for forming a transistor having cubic boron nitride layer

Process for producing ohmic electrode for p-type cubic system boron...

Patents Applicationslast 30 patents

SILANE OR BORANE TREATMENT OF METAL THIN FILMS

SILANE OR BORANE TREATMENT OF METAL THIN FILMS

HARDMASK MATERIALS

HARDMASK MATERIALS

HARDMASK MATERIALS

IN SITU DEPOSITION OF A LOW K DIELECTRIC LAYER, BARRIER LAYER, ETCH...

INCORPORATION OF NITROGEN INTO HIGH K DIELECTRIC FILM

Mixed metal nitride and boride barrier layers

Method and apparatus for non-aggressive plasma-enhanced vapor depos...

In situ deposition of a low K dielectric layer, barrier layer, etch...

Incorporation of nitrogen into high k dielectric film

Method and apparatus for non-aggressive plasma-enhanced vapor depos...

Method of forming barrier layers

Methods and devices using group III nitride compound semiconductor

Incorporation of nitrogen into high k dielectric film

Mixed metal nitride and boride barrier layers