by field effect

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H01L21/765

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/765by field effect

Industries

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor and resistor-transistor-logic circuit with GaN structure a...
- Patent number 12,132,043
- Issue date Oct 29, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array boundary structure to reduce dishing
- Patent number 12,127,399
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor and resistor-transistor-logic circuit with GaN structure a...
- Patent number 12,119,342
- Issue date Oct 15, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride device and method of fabricating a Group III nitr...
- Patent number 12,087,830
- Issue date Sep 10, 2024
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,080,707
- Issue date Sep 3, 2024
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor with field plating
- Patent number 12,074,216
- Issue date Aug 27, 2024
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,068,310
- Issue date Aug 20, 2024
- Mitsubishi Electric Corporation
- Munenori Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,062,654
- Issue date Aug 13, 2024
- Mitsubishi Electric Corporation
- Takuya Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing a trench power MOSFET
- Patent number 12,062,717
- Issue date Aug 13, 2024
- SK keyfoundry Inc.
- Hyun Kwang Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 12,034,071
- Issue date Jul 9, 2024
- Vanguard International Semiconductor Corporation
- Yang Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,027,614
- Issue date Jul 2, 2024
- Kabushiki Kaisha Toshiba
- Hitoshi Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,021,012
- Issue date Jun 25, 2024
- Rohm Co., Ltd.
- Kazuki Okuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistors having improved performance
- Patent number 12,009,417
- Issue date Jun 11, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shield gate trench MOSFET device and method for making the same
- Patent number 11,990,523
- Issue date May 21, 2024
- Nantong Sanrise Integrated Circuit Co., LTD
- Dajie Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 11,984,499
- Issue date May 14, 2024
- SHANGHAI HESTIA POWER INC.
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic field termination structures for improving reliability of...
- Patent number 11,961,888
- Issue date Apr 16, 2024
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection cell and antenna integrated with...
- Patent number 11,942,441
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- HoChe Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits and group III-nitride high-electron mobility transistors w...
- Patent number 11,929,428
- Issue date Mar 12, 2024
- Wolfspeed, Inc.
- Thomas J. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,929,365
- Issue date Mar 12, 2024
- Rohm Co., Ltd.
- Shinya Umeki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride-based transistor device having a field plate
- Patent number 11,929,405
- Issue date Mar 12, 2024
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielding structure for ultra-high voltage semiconductor devices
- Patent number 11,923,425
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Cheng Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor high-voltage termination with deep trench and floatin...
- Patent number 11,901,406
- Issue date Feb 13, 2024
- Analog Power Conversion LLC
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric-filled trench isolation of vias
- Patent number 11,887,932
- Issue date Jan 30, 2024
- Intel Corporation
- Kemal Aygun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an insulation layer in a semiconductor body and...
- Patent number 11,869,966
- Issue date Jan 9, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for high voltage applications
- Patent number 11,862,673
- Issue date Jan 2, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kwangsik Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tie off device
- Patent number 11,862,637
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Lun Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an isolation region having an edge b...
- Patent number 11,854,863
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Te-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate trench power MOSFET with self-aligned poly-to-poly isola...
- Patent number 11,848,378
- Issue date Dec 19, 2023
- STMicroelectronics Pte Ltd
- Ditto Adnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,837,642
- Issue date Dec 5, 2023
- Samsung Electronics Co., Ltd.
- Soogine Chong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TIE OFF DEVICE
- Publication number 20240387547
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Lun Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240371860
- Publication date Nov 7, 2024
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY BOUNDARY STRUCTURE TO REDUCE DISHING
- Publication number 20240373626
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240355814
- Publication date Oct 24, 2024
- Mitsubishi Electric Corporation
- Munenori IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240290782
- Publication date Aug 29, 2024
- Mitsubishi Electric Corporation
- Takuya YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE-BASED TRANSISTOR DEVICE HAVING A CONDUCTIVE REDIS...
- Publication number 20240258382
- Publication date Aug 1, 2024
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING ELECTROSTATIC DISCHARGE PROTECTION CELL AND ANTENN...
- Publication number 20240234347
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- HoChe YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRINSIC FIELD TERMINATION STRUCTURES FOR IMPROVING RELIABILITY OF...
- Publication number 20240222444
- Publication date Jul 4, 2024
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDING STRUCTURE FOR ULTRA-HIGH VOLTAGE SEMICONDUCTOR DEVICES
- Publication number 20240194744
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacuturing Company, Ltd.
- Yi-Cheng CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240178223
- Publication date May 30, 2024
- ROHM CO., LTD.
- Shinya UMEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TIE OFF DEVICE
- Publication number 20240105726
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Lun Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20240096689
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TE-AN CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240087996
- Publication date Mar 14, 2024
- ROHM CO., LTD.
- Kazuki OKUYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE FOR HIGH VOLTAGE APPLICATIONS
- Publication number 20240072109
- Publication date Feb 29, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kwangsik KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET DEVICE HAVING IMPROVED SAFE-OPERATING AREA AND ON RESI...
- Publication number 20230420557
- Publication date Dec 28, 2023
- STMicroelectronics S.r.l.
- Angelo MAGRI'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230378254
- Publication date Nov 23, 2023
- PANJIT INTERNATIONAL INC.
- CHE-MING LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH DIELECTRIC SPACERS AND FIELD PLATE AND METHOD OF FA...
- Publication number 20230361183
- Publication date Nov 9, 2023
- NXP USA, Inc.
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230361111
- Publication date Nov 9, 2023
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230352305
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zheng-Long CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR SEPARATING DIFFERENT TRANSISTOR REGIONS ON...
- Publication number 20230335560
- Publication date Oct 19, 2023
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FIELD PLATE
- Publication number 20230326979
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tao-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE HAVING A SODIUM STOPPER IN AN INSULATION LAYER GR...
- Publication number 20230307512
- Publication date Sep 28, 2023
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY BOUNDARY STRUCTURE TO REDUCE DISHING
- Publication number 20230301075
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING BURIED FIELD PLATE ST...
- Publication number 20230282714
- Publication date Sep 7, 2023
- Powerchip Semiconductor Manufacturing Corporation
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TYPE III-V SEMICONDUCTOR DEVICE WITH STRUCTURED PASSIVATION
- Publication number 20230253486
- Publication date Aug 10, 2023
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATING AT SOURCE SIDE OF GATE BIAS MOSFETS TO PREVENT VT SHIFT
- Publication number 20230231020
- Publication date Jul 20, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20230223399
- Publication date Jul 13, 2023
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20230223400
- Publication date Jul 13, 2023
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDING STRUCTURE FOR ULTRA-HIGH VOLTAGE SEMICONDUCTOR DEVICES
- Publication number 20230207642
- Publication date Jun 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Cheng CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH ALIGNED FIELD PLATE AND METHOD OF FABRICATION THEREFOR
- Publication number 20230207641
- Publication date Jun 29, 2023
- NXP USA, Inc.
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS

by field effect

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gallium nitride (GAN) three-dimensional integrated circuit technology

Resistor and resistor-transistor-logic circuit with GaN structure a...

Array boundary structure to reduce dishing

Resistor and resistor-transistor-logic circuit with GaN structure a...

Group III nitride device and method of fabricating a Group III nitr...

Semiconductor device

Fin field effect transistor with field plating

Semiconductor device

Semiconductor device and method of manufacturing semiconductor device

Structure and method for manufacturing a trench power MOSFET

High electron mobility transistor

Semiconductor device

Semiconductor device

High electron mobility transistors having improved performance

Shield gate trench MOSFET device and method for making the same

Silicon carbide semiconductor device

Extrinsic field termination structures for improving reliability of...

Electrostatic discharge protection cell and antenna integrated with...

Circuits and group III-nitride high-electron mobility transistors w...

Semiconductor device

Group III nitride-based transistor device having a field plate

Shielding structure for ultra-high voltage semiconductor devices

Semiconductor high-voltage termination with deep trench and floatin...

Dielectric-filled trench isolation of vias

Method for forming an insulation layer in a semiconductor body and...

Device for high voltage applications

Tie off device

Semiconductor device including an isolation region having an edge b...

Split-gate trench power MOSFET with self-aligned poly-to-poly isola...

Semiconductor device and method of fabricating the same

Patents Applicationslast 30 patents

TIE OFF DEVICE

SEMICONDUCTOR DEVICE

ARRAY BOUNDARY STRUCTURE TO REDUCE DISHING

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

GROUP III NITRIDE-BASED TRANSISTOR DEVICE HAVING A CONDUCTIVE REDIS...

METHOD OF MAKING ELECTROSTATIC DISCHARGE PROTECTION CELL AND ANTENN...

EXTRINSIC FIELD TERMINATION STRUCTURES FOR IMPROVING RELIABILITY OF...

SHIELDING STRUCTURE FOR ULTRA-HIGH VOLTAGE SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE

TIE OFF DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

SEMICONDUCTOR DEVICE

DEVICE FOR HIGH VOLTAGE APPLICATIONS

POWER MOSFET DEVICE HAVING IMPROVED SAFE-OPERATING AREA AND ON RESI...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TRANSISTOR WITH DIELECTRIC SPACERS AND FIELD PLATE AND METHOD OF FA...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

ISOLATION STRUCTURE FOR SEPARATING DIFFERENT TRANSISTOR REGIONS ON...

CONTACT FIELD PLATE

SEMICONDUCTOR DIE HAVING A SODIUM STOPPER IN AN INSULATION LAYER GR...

ARRAY BOUNDARY STRUCTURE TO REDUCE DISHING

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING BURIED FIELD PLATE ST...

TYPE III-V SEMICONDUCTOR DEVICE WITH STRUCTURED PASSIVATION

FIELD PLATING AT SOURCE SIDE OF GATE BIAS MOSFETS TO PREVENT VT SHIFT

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

SHIELDING STRUCTURE FOR ULTRA-HIGH VOLTAGE SEMICONDUCTOR DEVICES

TRANSISTOR WITH ALIGNED FIELD PLATE AND METHOD OF FABRICATION THEREFOR