by induction

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CPC
C30B13/20

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B13/00Single-crystal growth by zone-melting Refining by zone-melting

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C30B13/20by induction

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Patents Grantslast 30 patents

Information Patent Grant
Method for producing a single crystal from semiconductor material b...
- Patent number 11,788,201
- Issue date Oct 17, 2023
- Siltronic AG
- Ludwig Altmannshofer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for pulling a single crystal by the FZ method comprising red...
- Patent number 10,988,856
- Issue date Apr 27, 2021
- Siltronic AG
- Thomas Schroeck
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal production apparatus and single crystal producing me...
- Patent number 10,975,493
- Issue date Apr 13, 2021
- Shin Akutsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Float zone silicon wafer manufacturing system and related process
- Patent number 10,811,245
- Issue date Oct 20, 2020
- Rayton Solar Inc.
- Andrew X. Yakub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for tailoring the dopant profile in a laser crystal using zo...
- Patent number 10,273,595
- Issue date Apr 30, 2019
- Raytheon Company
- Robert W. Byren
- C30 - CRYSTAL GROWTH
Information Patent Grant
Auxiliary heating device for zone melting furnace and heat preserva...
- Patent number 10,138,573
- Issue date Nov 27, 2018
- ZHEJIANG JINGSHENG M & E CO., LTD
- Linjian Fu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for producing a monocrystal by crystallizing said monocrysta...
- Patent number 9,932,690
- Issue date Apr 3, 2018
- Siltronic AG
- Georg Raming
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a single crystal by crystallizing the single cry...
- Patent number 9,932,691
- Issue date Apr 3, 2018
- Siltronic AG
- Georg Raming
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for tailoring the dopant profile in a laser crystal using zo...
- Patent number 9,926,644
- Issue date Mar 27, 2018
- Raytheon Company
- Robert W. Byren
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and process for producing a single crystal of silicon
- Patent number 9,828,692
- Issue date Nov 28, 2017
- Siltronic AG
- Georg Brenninger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and process for producing a crystal of semiconductor mate...
- Patent number 9,828,693
- Issue date Nov 28, 2017
- Siltronic AG
- Georg Brenninger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Zone melting furnace thermal field with dual power heating function...
- Patent number 9,797,062
- Issue date Oct 24, 2017
- ZHEJIANG JINGSHENG M & E CO., LTD
- Jianwei Cao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electromagnetic casting method and apparatus for polycrystalline si...
- Patent number 9,553,221
- Issue date Jan 24, 2017
- Sumco Corporation
- Koichi Maegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing a single crystal
- Patent number 9,422,634
- Issue date Aug 23, 2016
- Siltronic AG
- Georg Raming
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing a silicon single crystal
- Patent number 9,410,262
- Issue date Aug 9, 2016
- Siltronic AG
- Josef Lobmeyer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Induction heating coil and method for melting granules composed of...
- Patent number 9,084,296
- Issue date Jul 14, 2015
- Siltronic AG
- Ludwig Altmannshofer
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for producing a single crystal composed of silicon by remelt...
- Patent number 8,834,627
- Issue date Sep 16, 2014
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Grant
High purity ZrB2 powder and manufacturing method thereof
- Patent number 8,585,995
- Issue date Nov 19, 2013
- JX Nippon Mining & Metals Corporation
- Yuichiro Shindo
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for producing a single crystal of semiconductor material
- Patent number 8,580,033
- Issue date Nov 12, 2013
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing a single crystal of semiconductor material
- Patent number 8,475,592
- Issue date Jul 2, 2013
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing a single crystal composed of silicon using mol...
- Patent number 8,454,746
- Issue date Jun 4, 2013
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing a monocrystalline Si wafer having an approxima...
- Patent number 8,337,615
- Issue date Dec 25, 2012
- PV Silicon Forschungs und Produktions GmbH
- Nikolai Abrosimov
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for producing single crystal silicon
- Patent number 8,313,577
- Issue date Nov 20, 2012
- Mitsubishi Materials Corporation
- Noboru Chikusa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and device for producing thin silicon rods
- Patent number 8,197,595
- Issue date Jun 12, 2012
- PV Silicon Forschungs und Produktions GmbH
- Helge Riemann
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Device for the production of crystal rods having a defined cross-se...
- Patent number 7,326,297
- Issue date Feb 5, 2008
- PV Silicon Forschungs- und Produktions AG.
- Nikolai V. Abrosimov
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Susceptor for float-zone apparatus
- Patent number 6,251,182
- Issue date Jun 26, 2001
- Hemlock Semiconductor Corporation
- Joaquin Enrique Luna
- C30 - CRYSTAL GROWTH
Information Patent Grant
High-frequency induction heater and method of producing semiconduct...
- Patent number 5,792,258
- Issue date Aug 11, 1998
- Shin-Etsu Handotai Co., Ltd.
- Masanori Kimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon rod
- Patent number 5,499,598
- Issue date Mar 19, 1996
- Tokuyama Corporation
- Hiroyuki Oda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for producing silicon ingots having high oxyg...
- Patent number 5,089,082
- Issue date Feb 18, 1992
- Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
- Peter Dreier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for crystal ribbon growth
- Patent number 5,069,742
- Issue date Dec 3, 1991
- Carl E. Bleil
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING A SINGLE CRYSTAL FROM SEMICONDUCTOR MATERIAL B...
- Publication number 20210222319
- Publication date Jul 22, 2021
- Siltronic AG
- Ludwig ALTMANNSHOFER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR PULLING A SINGLE CRYSTAL BY THE FZ METHOD
- Publication number 20200149183
- Publication date May 14, 2020
- Siltronic AG
- Thomas SCHROECK
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCING ME...
- Publication number 20180274124
- Publication date Sep 27, 2018
- Shin AKUTSU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR TAILORING THE DOPANT PROFILE IN A LASER CRYSTAL USING ZO...
- Publication number 20180245236
- Publication date Aug 30, 2018
- Raytheon Company
- Robert W. BYREN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR THE THERMAL TREATMENT OF GRANULAR MATERIAL COMPOSED OF S...
- Publication number 20180194633
- Publication date Jul 12, 2018
- Siltronic AG
- Georg Brenninger
- C01 - INORGANIC CHEMISTRY
Information Patent Application
FLOAT ZONE SILICON WAFER MANUFACTURING SYSTEM AND RELATED PROCESS
- Publication number 20170069482
- Publication date Mar 9, 2017
- Rayton Solar Inc.
- Andrew X. Yakub
- C30 - CRYSTAL GROWTH
Information Patent Application
Integrated System of Silicon Casting and Float Zone Crystallization
- Publication number 20160348271
- Publication date Dec 1, 2016
- Jagannathan RAVI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Growing A Single Crystal By Crystallizing The Single Cry...
- Publication number 20160177469
- Publication date Jun 23, 2016
- Siltronic AG
- Georg RAMING
- C30 - CRYSTAL GROWTH
Information Patent Application
AUXILIARY HEATING DEVICE FOR ZONE MELTING FURNACE AND HEAT PRESERVA...
- Publication number 20160053401
- Publication date Feb 25, 2016
- ZHEJIANG JINGSHENG M & E CO., LTD
- Linjian FU
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND PROCESS FOR PRODUCING A CRYSTAL OF SEMICONDUCTOR MATE...
- Publication number 20150354087
- Publication date Dec 10, 2015
- SILTRONIC AG
- Georg BRENNINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICE FOR PRODUCING A MONOCRYSTAL BY CRYSTALLIZING SAID MONOCRYSTA...
- Publication number 20150203987
- Publication date Jul 23, 2015
- Siltronic AG
- Georg Raming
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR TAILORING THE DOPANT PROFILE IN A LASER CRYSTAL USING ZO...
- Publication number 20150101526
- Publication date Apr 16, 2015
- Raytheon Company
- Robert W. Byren
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL
- Publication number 20140060421
- Publication date Mar 6, 2014
- Siltronic AG
- Josef Lobmeyer
- C30 - CRYSTAL GROWTH
Information Patent Application
ELECTROMAGNETIC CASTING METHOD AND APPARATUS FOR POLYCRYSTALLINE SI...
- Publication number 20130255315
- Publication date Oct 3, 2013
- Koichi Maegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL
- Publication number 20130192518
- Publication date Aug 1, 2013
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Apparatus For Producing A Single Crystal
- Publication number 20130160698
- Publication date Jun 27, 2013
- Siltronic AG
- Georg Raming
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR TAILORING THE DOPANT PROFILE IN A LASER CRYSTAL USING ZO...
- Publication number 20130044779
- Publication date Feb 21, 2013
- Raytheon Company
- Robert W. BYREN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND DEVICE FOR PRODUCING THIN SILICON RODS
- Publication number 20110314869
- Publication date Dec 29, 2011
- PV Silicon Forschungs und Produktions GmbH
- Helge Riemann
- C30 - CRYSTAL GROWTH
Information Patent Application
High-frequency coil pulling holes arrangement for producing multipl...
- Publication number 20110204044
- Publication date Aug 25, 2011
- Chaoxuan Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Producing A Single Crystal Composed Of Silicon Using Mol...
- Publication number 20110185963
- Publication date Aug 4, 2011
- Siltronic AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Producing A Single Crystal Composed Of Silicon By Remelt...
- Publication number 20110107960
- Publication date May 12, 2011
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Device For Producing A Single Crystal Composed Of Silicon By Remelt...
- Publication number 20110095018
- Publication date Apr 28, 2011
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Producing A Single Crystal Of Semiconductor Material
- Publication number 20100037815
- Publication date Feb 18, 2010
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Induction Heating Coil and Method For Melting Granules Composed Of...
- Publication number 20090223949
- Publication date Sep 10, 2009
- Siltronic AG
- Ludwig Altmannshofer
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SINGLE CRYSTAL SILICON
- Publication number 20090158996
- Publication date Jun 25, 2009
- MITSUBISHI MATERIALS CORPORATION
- Noboru Chikusa
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A MONOCRYSTALLINE SI WAFER HAVING AN APPROXIMA...
- Publication number 20090068407
- Publication date Mar 12, 2009
- PV Silicon Forschungs-und Produktions AG
- Nikolai Abrosimov
- C30 - CRYSTAL GROWTH
Information Patent Application
High Purity Zrb2 Powder and Manufacturing Method Thereof
- Publication number 20080075648
- Publication date Mar 27, 2008
- Nippon Mining & Metals Co., Ltd.
- Yuichiro Shindo
- C30 - CRYSTAL GROWTH
Information Patent Application
Device for the production of crystal rods having a defined cross-se...
- Publication number 20050188918
- Publication date Sep 1, 2005
- Nikolai V. Abrosimov
- C30 - CRYSTAL GROWTH

by induction

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for producing a single crystal from semiconductor material b...

Method for pulling a single crystal by the FZ method comprising red...

Single crystal production apparatus and single crystal producing me...

Float zone silicon wafer manufacturing system and related process

Method for tailoring the dopant profile in a laser crystal using zo...

Auxiliary heating device for zone melting furnace and heat preserva...

Device for producing a monocrystal by crystallizing said monocrysta...

Method for growing a single crystal by crystallizing the single cry...

Method for tailoring the dopant profile in a laser crystal using zo...

Apparatus and process for producing a single crystal of silicon

Apparatus and process for producing a crystal of semiconductor mate...

Zone melting furnace thermal field with dual power heating function...

Electromagnetic casting method and apparatus for polycrystalline si...

Method and apparatus for producing a single crystal

Method for producing a silicon single crystal

Induction heating coil and method for melting granules composed of...

Method for producing a single crystal composed of silicon by remelt...

High purity ZrB2 powder and manufacturing method thereof

Method for producing a single crystal of semiconductor material

Method for producing a single crystal of semiconductor material

Method for producing a single crystal composed of silicon using mol...

Method for producing a monocrystalline Si wafer having an approxima...

Apparatus for producing single crystal silicon

Method and device for producing thin silicon rods

Device for the production of crystal rods having a defined cross-se...

Susceptor for float-zone apparatus

High-frequency induction heater and method of producing semiconduct...

Method for producing a silicon rod

Process and apparatus for producing silicon ingots having high oxyg...

Method and apparatus for crystal ribbon growth

Patents Applicationslast 30 patents

METHOD FOR PRODUCING A SINGLE CRYSTAL FROM SEMICONDUCTOR MATERIAL B...

METHOD AND APPARATUS FOR PULLING A SINGLE CRYSTAL BY THE FZ METHOD

SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCING ME...

METHOD FOR TAILORING THE DOPANT PROFILE IN A LASER CRYSTAL USING ZO...

METHOD FOR THE THERMAL TREATMENT OF GRANULAR MATERIAL COMPOSED OF S...

FLOAT ZONE SILICON WAFER MANUFACTURING SYSTEM AND RELATED PROCESS

Integrated System of Silicon Casting and Float Zone Crystallization

Method For Growing A Single Crystal By Crystallizing The Single Cry...

AUXILIARY HEATING DEVICE FOR ZONE MELTING FURNACE AND HEAT PRESERVA...

APPARATUS AND PROCESS FOR PRODUCING A CRYSTAL OF SEMICONDUCTOR MATE...

DEVICE FOR PRODUCING A MONOCRYSTAL BY CRYSTALLIZING SAID MONOCRYSTA...

METHOD FOR TAILORING THE DOPANT PROFILE IN A LASER CRYSTAL USING ZO...

METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL

ELECTROMAGNETIC CASTING METHOD AND APPARATUS FOR POLYCRYSTALLINE SI...

METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL

Method and Apparatus For Producing A Single Crystal

METHOD FOR TAILORING THE DOPANT PROFILE IN A LASER CRYSTAL USING ZO...

METHOD AND DEVICE FOR PRODUCING THIN SILICON RODS

High-frequency coil pulling holes arrangement for producing multipl...

Method For Producing A Single Crystal Composed Of Silicon Using Mol...

Method For Producing A Single Crystal Composed Of Silicon By Remelt...

Device For Producing A Single Crystal Composed Of Silicon By Remelt...

Method For Producing A Single Crystal Of Semiconductor Material

Induction Heating Coil and Method For Melting Granules Composed Of...

APPARATUS FOR PRODUCING SINGLE CRYSTAL SILICON

METHOD FOR PRODUCING A MONOCRYSTALLINE SI WAFER HAVING AN APPROXIMA...

High Purity Zrb2 Powder and Manufacturing Method Thereof

Device for the production of crystal rods having a defined cross-se...