by use of anti-parallel coupled [APC] ferromagnetic layers

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CPC
H01F10/3272

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/3272by use of anti-parallel coupled [APC] ferromagnetic layers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
System and method for antiferromagnet skyrmion based logic device
- Patent number 12,218,667
- Issue date Feb 4, 2025
- Ceremorphic, Inc.
- Akshaykumar Salimath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Iridium-manganese-based tunnel magnetoresistance sensing element wi...
- Patent number 12,210,075
- Issue date Jan 28, 2025
- Infineon Technologies AG
- Bernhard Endres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive devices comprising a synthetic antiferromagnetic c...
- Patent number 12,207,563
- Issue date Jan 21, 2025
- Western Digital Technologies, Inc.
- Susumu Okamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 12,170,104
- Issue date Dec 17, 2024
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 12,167,701
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element with free-layer and method of manufacturin...
- Patent number 12,135,226
- Issue date Nov 5, 2024
- Analog Devices International Unlimited Company
- Jochen Schmitt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic storage device
- Patent number 12,133,472
- Issue date Oct 29, 2024
- Kioxia Corporation
- Katsuhiko Koui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synthetic antiferromagnet, magnetic tunneling junction device inclu...
- Patent number 12,080,459
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun Ryu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive devices and methods therefor
- Patent number 12,052,928
- Issue date Jul 30, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive device comprising a synthetic antiferromagnetic co...
- Patent number 12,040,114
- Issue date Jul 16, 2024
- Western Digital Technologies, Inc.
- Susumu Okamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device including magnetoresistance effect element
- Patent number 12,029,136
- Issue date Jul 2, 2024
- Kioxia Corporation
- Shogo Itai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stack/structure with one or more transition metals...
- Patent number 12,029,137
- Issue date Jul 2, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sumio Ikegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for manufacturing magnetoresistive stack devices
- Patent number 12,022,738
- Issue date Jun 25, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-treatment processes for ion beam etching of magnetic tunnel ju...
- Patent number 11,991,932
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hung-Yu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device including magnetoresistance effect element
- Patent number 11,985,907
- Issue date May 14, 2024
- Kioxia Corporation
- Shogo Itai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM structure with enhanced magnetics using seed engineering
- Patent number 11,972,785
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Grant
Stress sensor and manufacturing method therefor
- Patent number 11,959,815
- Issue date Apr 16, 2024
- Murata Manufacturing Co., Ltd.
- Akira Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory using spin-orbit torque
- Patent number 11,944,015
- Issue date Mar 26, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device
- Patent number 11,935,677
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Younghyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Minimal thickness synthetic antiferromagnetic (SAF) structure with...
- Patent number 11,930,717
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive sensor element with synthetic antiferromagnet biasing
- Patent number 11,921,172
- Issue date Mar 5, 2024
- NVE Corporation
- Joe Davies
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High retention storage layer using ultra-low RA MgO process in perp...
- Patent number 11,925,125
- Issue date Mar 5, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular MTJ element having a cube-textured reference layer an...
- Patent number 11,910,721
- Issue date Feb 20, 2024
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Domain wall moving element, domain wall moving type magnetic record...
- Patent number 11,894,172
- Issue date Feb 6, 2024
- TDK Corporation
- Tetsuhito Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive sensor and fabrication method for a magnetoresisti...
- Patent number 11,892,526
- Issue date Feb 6, 2024
- Infineon Technologies AG
- Bernhard Endres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled magnetic anisotropy memory device including an a...
- Patent number 11,887,640
- Issue date Jan 30, 2024
- Western Digital Technologies, Inc.
- Derek Stewart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled magnetic anisotropy memory device including an a...
- Patent number 11,889,702
- Issue date Jan 30, 2024
- Western Digital Technologies, Inc.
- Alan Kalitsov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cro...
- Patent number 11,869,561
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical spin orbit torque devices
- Patent number RE49797
- Issue date Jan 9, 2024
- Samsung Electronics Co., Ltd.
- Vladimir Nikitin
Information Patent Grant
Magnetic tunneling junction with synthetic free layer for SOT-MRAM
- Patent number 11,844,287
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTIVE STACK AND METHODS THEREFOR
- Publication number 20250063953
- Publication date Feb 20, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Renu WHIG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
- Publication number 20250040447
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALF METALLIC HEUSLER MULTILAYERS WITH PERPENDICULAR MAGNETIC ANISO...
- Publication number 20250024756
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Mahesh Samant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE
- Publication number 20250008843
- Publication date Jan 2, 2025
- SK HYNIX INC.
- Soo Man SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240431214
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...
- Publication number 20240387089
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun RYU
- G11 - INFORMATION STORAGE
Information Patent Application
FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEU...
- Publication number 20240347089
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPEN...
- Publication number 20240349619
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Cell and Magnetic Memory
- Publication number 20240331753
- Publication date Oct 3, 2024
- ZHEJIANG HIKSTOR TECHNOLOGY CO., LTD.
- Junlu GONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WI...
- Publication number 20240321333
- Publication date Sep 26, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun RYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR
- Publication number 20240315145
- Publication date Sep 19, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sumio IKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR MANUFACTURING MAGNETORESISTIVE STACK DEVICES
- Publication number 20240306513
- Publication date Sep 12, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev AGGARWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IRIDIUM-MANGANESE-BASED TUNNEL MAGNETORESISTANCE SENSING ELEMENT WI...
- Publication number 20240302459
- Publication date Sep 12, 2024
- INFINEON TECHNOLOGIES AG
- Bernhard ENDRES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACK WITH A HIGH TUNNELING MAGNETORESISTANCE RATIO FOR A MAGNETIC...
- Publication number 20240290368
- Publication date Aug 29, 2024
- IMEC vzw
- Sofie Mertens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunneling Magnetoresistance Device With Magnetically Soft High Mome...
- Publication number 20240233999
- Publication date Jul 11, 2024
- HEADWAY TECHNOLOGIES, INC.
- Hui-Chuan Wang
- G11 - INFORMATION STORAGE
Information Patent Application
REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-AC...
- Publication number 20240196755
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Application
MICROELECTRONIC ASSEMBLY HAVING ANTIFERROMAGNETIC FILM STRUCTURE TH...
- Publication number 20240186270
- Publication date Jun 6, 2024
- Intel Corporation
- Srinivas V. Pietambaram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY USING SPIN-ORBIT TORQUE
- Publication number 20240188449
- Publication date Jun 6, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Han-Jong CHIA
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREO...
- Publication number 20240147868
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Soichiro MIZUSAKI
- G11 - INFORMATION STORAGE
Information Patent Application
Middle Shields Two-Dimensional Magnetic Recording Read Heads
- Publication number 20240144966
- Publication date May 2, 2024
- Western Digital Technologies, Inc.
- Ming MAO
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...
- Publication number 20240107893
- Publication date Mar 28, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABIL...
- Publication number 20240107892
- Publication date Mar 28, 2024
- Apple Inc.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Device Comprising A Synthetic Antiferromagnetic Co...
- Publication number 20240087785
- Publication date Mar 14, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE ELEMENT AND STORAGE APPARATUS
- Publication number 20240005975
- Publication date Jan 4, 2024
- SONY GROUP CORPORATION
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN LOGIC DEVICE BASED ON SPIN-CHARGE CONVERSION AND SPIN LOGIC AR...
- Publication number 20230403865
- Publication date Dec 14, 2023
- Industry-Academic Cooperation Foundation, Yonsei University
- Jongill HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS O...
- Publication number 20230403948
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsuan-Yi PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
- Publication number 20230389448
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Hard Masks For Ultra-Thin Magnetic Sensors
- Publication number 20230258747
- Publication date Aug 17, 2023
- HEADWAY TECHNOLOGIES, INC.
- Tom Zhong
- B24 - GRINDING POLISHING
Information Patent Application
MAGNETIC ELEMENT AND INTEGRATED DEVICE
- Publication number 20230247916
- Publication date Aug 3, 2023
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...
- Publication number 20230225220
- Publication date Jul 13, 2023
- Samsung Electronics Co., LTD
- Kwangseok KIM
- G11 - INFORMATION STORAGE

by use of anti-parallel coupled [APC] ferromagnetic layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

System and method for antiferromagnet skyrmion based logic device

Iridium-manganese-based tunnel magnetoresistance sensing element wi...

Magnetoresistive devices comprising a synthetic antiferromagnetic c...

Storage element and storage apparatus

Magnetic tunnel junction with low defect rate after high temperatur...

Magnetoresistive element with free-layer and method of manufacturin...

Magnetic storage device

Synthetic antiferromagnet, magnetic tunneling junction device inclu...

Magnetoresistive devices and methods therefor

Magnetoresistive device comprising a synthetic antiferromagnetic co...

Magnetic memory device including magnetoresistance effect element

Magnetoresistive stack/structure with one or more transition metals...

Methods for manufacturing magnetoresistive stack devices

Post-treatment processes for ion beam etching of magnetic tunnel ju...

Magnetic memory device including magnetoresistance effect element

MRAM structure with enhanced magnetics using seed engineering

Stress sensor and manufacturing method therefor

Magnetic memory using spin-orbit torque

Magnetic device

Minimal thickness synthetic antiferromagnetic (SAF) structure with...

Magnetoresistive sensor element with synthetic antiferromagnet biasing

High retention storage layer using ultra-low RA MgO process in perp...

Perpendicular MTJ element having a cube-textured reference layer an...

Domain wall moving element, domain wall moving type magnetic record...

Magnetoresistive sensor and fabrication method for a magnetoresisti...

Voltage-controlled magnetic anisotropy memory device including an a...

Voltage-controlled magnetic anisotropy memory device including an a...

Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cro...

Vertical spin orbit torque devices

Magnetic tunneling junction with synthetic free layer for SOT-MRAM

Patents Applicationslast 30 patents

MAGNETORESISTIVE STACK AND METHODS THEREFOR

MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM

HALF METALLIC HEUSLER MULTILAYERS WITH PERPENDICULAR MAGNETIC ANISO...

SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...

FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEU...

NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPEN...

Magnetic Memory Cell and Magnetic Memory

MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WI...

MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR

METHODS FOR MANUFACTURING MAGNETORESISTIVE STACK DEVICES

IRIDIUM-MANGANESE-BASED TUNNEL MAGNETORESISTANCE SENSING ELEMENT WI...

STACK WITH A HIGH TUNNELING MAGNETORESISTANCE RATIO FOR A MAGNETIC...

Tunneling Magnetoresistance Device With Magnetically Soft High Mome...

REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-AC...

MICROELECTRONIC ASSEMBLY HAVING ANTIFERROMAGNETIC FILM STRUCTURE TH...

MAGNETIC MEMORY USING SPIN-ORBIT TORQUE

SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREO...

Middle Shields Two-Dimensional Magnetic Recording Read Heads

Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...

MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABIL...

Magnetoresistive Device Comprising A Synthetic Antiferromagnetic Co...

STORAGE ELEMENT AND STORAGE APPARATUS

SPIN LOGIC DEVICE BASED ON SPIN-CHARGE CONVERSION AND SPIN LOGIC AR...

MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS O...

MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM

Composite Hard Masks For Ultra-Thin Magnetic Sensors

MAGNETIC ELEMENT AND INTEGRATED DEVICE

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...