by zone-melting

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CPC
C30B21/04

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B21/00Unidirectional solidification of eutectic materials

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C30B21/04by zone-melting

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Patents Grantslast 30 patents

Information Patent Grant
Single crystal CVD synthetic diamond material
- Patent number 9,260,797
- Issue date Feb 16, 2016
- Element Six Limited
- Harpreet Kaur Dhillon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Monocrystalline silicon carbide ingot, monocrystalline silicon carb...
- Patent number 8,795,624
- Issue date Aug 5, 2014
- Nippon Steel & Sumitomo Metal Corporation
- Masashi Nakabayashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Monocrystalline silicon carbide ingot, monocrystalline silicon carb...
- Patent number 8,673,254
- Issue date Mar 18, 2014
- Nippon Steel & Sumitomo Metal Corporation
- Masashi Nakabayashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Monocrystalline silicon carbide ingot, monocrystalline silicon carb...
- Patent number 8,178,389
- Issue date May 15, 2012
- Nippon Steel Corporation
- Masashi Nakabayashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Miniaturized dielectrically isolated solid state device
- Patent number 6,849,918
- Issue date Feb 1, 2005
- Chou H. Li
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for production of spinel single crystal filaments
- Patent number 5,650,007
- Issue date Jul 22, 1997
- Agency of Industrial Science & Technology, Ministry of International Trade &...
- Shoji Kawakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for making solid state device utilizing ion implantation tec...
- Patent number 5,082,793
- Issue date Jan 21, 1992
- Chou H. Li
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for making solid-state device utilizing isolation grooves
- Patent number 4,946,800
- Issue date Aug 7, 1990
- Chou H. Li
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dielectrically isolated integrated circuit structure
- Patent number 4,916,513
- Issue date Apr 10, 1990
- Chou H. Li
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making active solid state devices
- Patent number 4,690,714
- Issue date Sep 1, 1987
- Chou H. Li
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin film binary metallic eutectics
- Patent number 4,500,609
- Issue date Feb 19, 1985
- General Electric Company
- Harvey E. Cline
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing eutectics as thin films using a quartz lamp as...
- Patent number 4,498,923
- Issue date Feb 12, 1985
- General Electric Company
- Harvey E. Cline
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing eutectics as thin films using an arc lamp, as...
- Patent number 4,498,925
- Issue date Feb 12, 1985
- General Electric Company
- Harvey E. Cline
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing eutectics as thin films using a laser device a...
- Patent number 4,498,926
- Issue date Feb 12, 1985
- General Electric Company
- Harvey E. Cline
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing eutectics as thin films using a line heater
- Patent number 4,498,924
- Issue date Feb 12, 1985
- General Electric Company
- Harvey E. Cline
- C30 - CRYSTAL GROWTH
Information Patent Grant
Solid-state device
- Patent number 4,371,406
- Issue date Feb 1, 1983
- Chou H. Li
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 4,297,717
- Issue date Oct 27, 1981
- Chou H. Li
- C30 - CRYSTAL GROWTH
Information Patent Grant
Internal zone growth method for producing metal oxide metal eutecti...
- Patent number 4,231,796
- Issue date Nov 4, 1980
- The United States of America as represented by the United States Department o...
- Grady W. Clark
- C30 - CRYSTAL GROWTH
Information Patent Grant
3887384
- Patent number 3,887,384
- Issue date Jun 3, 1975
- C30 - CRYSTAL GROWTH
Information Patent Grant
3796673
- Patent number 3,796,673
- Issue date Mar 12, 1974
- C30 - CRYSTAL GROWTH
Information Patent Grant
3765956
- Patent number 3,765,956
- Issue date Oct 16, 1973
- C30 - CRYSTAL GROWTH
Information Patent Grant
3695941
- Patent number 3,695,941
- Issue date Oct 3, 1972
- C30 - CRYSTAL GROWTH
Information Patent Grant
3585714
- Patent number 3,585,714
- Issue date Jun 22, 1971
- C30 - CRYSTAL GROWTH
Information Patent Grant
3500135
- Patent number 3,500,135
- Issue date Mar 10, 1970
- C30 - CRYSTAL GROWTH
Information Patent Grant
3442823
- Patent number 3,442,823
- Issue date May 6, 1969
- C30 - CRYSTAL GROWTH
Information Patent Grant
3430109
- Patent number 3,430,109
- Issue date Feb 25, 1969
- C30 - CRYSTAL GROWTH
Information Patent Grant
3410665
- Patent number 3,410,665
- Issue date Nov 12, 1968
- C30 - CRYSTAL GROWTH
Information Patent Grant
3267405
- Patent number 3,267,405
- Issue date Aug 16, 1966
- C30 - CRYSTAL GROWTH
Information Patent Grant
3226225
- Patent number 3,226,225
- Issue date Dec 28, 1965
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SINGLE CRYSTAL CVD SYNTHETIC DIAMOND MATERIAL
- Publication number 20140335339
- Publication date Nov 13, 2014
- Harpreet Kaur Dhillon
- C30 - CRYSTAL GROWTH
Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...
- Publication number 20110180765
- Publication date Jul 28, 2011
- Masashi NAKABAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...
- Publication number 20100147212
- Publication date Jun 17, 2010
- Masashi NAKABAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
Monocrystalline Silicon Carbide Ingot, Monocrystalline Silicon Carb...
- Publication number 20070262322
- Publication date Nov 15, 2007
- NIPPON STEEL CORPORATION
- Masashi Nakabayashi
- C30 - CRYSTAL GROWTH

by zone-melting

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Single crystal CVD synthetic diamond material

Monocrystalline silicon carbide ingot, monocrystalline silicon carb...

Monocrystalline silicon carbide ingot, monocrystalline silicon carb...

Monocrystalline silicon carbide ingot, monocrystalline silicon carb...

Miniaturized dielectrically isolated solid state device

Method for production of spinel single crystal filaments

Method for making solid state device utilizing ion implantation tec...

Method for making solid-state device utilizing isolation grooves

Dielectrically isolated integrated circuit structure

Method of making active solid state devices

Thin film binary metallic eutectics

Method for producing eutectics as thin films using a quartz lamp as...

Method for producing eutectics as thin films using an arc lamp, as...

Method for producing eutectics as thin films using a laser device a...

Method for producing eutectics as thin films using a line heater

Solid-state device

Semiconductor device

Internal zone growth method for producing metal oxide metal eutecti...

3887384

3796673

3765956

3695941

3585714

3500135

3442823

3430109

3410665

3267405

3226225

Patents Applicationslast 30 patents

SINGLE CRYSTAL CVD SYNTHETIC DIAMOND MATERIAL

MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...

MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...

Monocrystalline Silicon Carbide Ingot, Monocrystalline Silicon Carb...