3500135

Information

• Patent Grant
• 3500135

• References
• Source

• Patent Number

  3,500,135

• Date Filed

  Not available

• Date Issued

  Tuesday, March 10, 1970
  54 years ago

• CPC

  • H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof
  • C30B21/02 - by normal casting or gradient freezing
  • C30B21/04 - by zone-melting
  • H01L21/763 - Polycristalline semiconductor regions
  • H01L21/764 - Air gaps
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • H01L27/1446 - in a repetitive configuration
  • H01L29/0657 - characterised by the shape of the body
  • H01L29/0661 - specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction
  • H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
  • Y10S136/29 - Testing, calibrating, treating
  • Y10S148/085 - Isolated-integrated
  • Y10S148/117 - Oxidation, selective

• US Classifications

  • 136 - Batteries: thermoelectric and photoelectric
  • 257 - Active solid-state devices
  • 313 - Electric lamp and discharge devices