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G11C11/1659

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

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G11C11/1659Cell access

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Patents Grantslast 30 patents

Information Patent Grant
Spin-orbit torque type magnetoresistance effect element, and method...
- Patent number 12,232,426
- Issue date Feb 18, 2025
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage apparatus
- Patent number 12,223,991
- Issue date Feb 11, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Taro Tatsuno
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage cell and data read/write method and storage array thereof
- Patent number 12,223,990
- Issue date Feb 11, 2025
- CHANGXIN MEMORY TECHNOLOGIES INC.
- Xiaoguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory readout circuit and method
- Patent number 12,217,810
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Min Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices and hybrid transistors
- Patent number 12,219,783
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device comprising magnetic tunnel junctions
- Patent number 12,213,322
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Kyung Hwan Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Dropout in neutral networks using threshold switching selectors in...
- Patent number 12,205,008
- Issue date Jan 21, 2025
- SANDISK TECHNOLOGIES LLC
- Wen Ma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Concurrent write to programmable resistance memory cells in cross-p...
- Patent number 12,205,638
- Issue date Jan 21, 2025
- SANDISK TECHNOLOGIES LLC
- Nathan Franklin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with unipolar selectors
- Patent number 12,207,476
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Cache memory and method of its manufacture
- Patent number 12,205,623
- Issue date Jan 21, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Chong Bi
- G11 - INFORMATION STORAGE
Information Patent Grant
In-memory computing unit and in-memory computing circuit having rec...
- Patent number 12,198,746
- Issue date Jan 14, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Yan Cui
- G11 - INFORMATION STORAGE
Information Patent Grant
Synapse memory
- Patent number 12,198,039
- Issue date Jan 14, 2025
- International Business Machines Corporation
- Takeo Yasuda
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Enhancing tunnel magnetoresistance in memory device comprising a me...
- Patent number 12,183,379
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having bitline segmented into bitline segments and re...
- Patent number 12,176,016
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shih-Lien Linus Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable (OTP) magnetoresistive random-access memory (...
- Patent number 12,170,105
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Midpoint sensing reference generation for STT-MRAM
- Patent number 12,165,684
- Issue date Dec 10, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point array IHOLD read margin improvement
- Patent number 12,148,459
- Issue date Nov 19, 2024
- SanDisk Technologies LLC
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor apparatus and method for manufacturing the same
- Patent number 12,068,014
- Issue date Aug 20, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Hiroyuki Uchida
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with tunable probabilistic state
- Patent number 12,057,153
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated device and neuromorphic device
- Patent number 12,058,872
- Issue date Aug 6, 2024
- TDK Corporation
- Shogo Yamada
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistive memory device
- Patent number 12,048,252
- Issue date Jul 23, 2024
- Kioxia Corporation
- Taiga Isoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Two bit memory device and method for operating the two-bit memory d...
- Patent number 12,046,269
- Issue date Jul 23, 2024
- Merck Patent GmbH
- Peer Kirsch
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for fiber tip re-imaging in LIDAR systems
- Patent number 12,041,789
- Issue date Jul 16, 2024
- Aeva, Inc.
- Mina Rezk
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory and reading/writing method thereof
- Patent number 12,035,539
- Issue date Jul 9, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Baolei Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,035,636
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Authenticity and yield by reading defective cells
- Patent number 12,027,224
- Issue date Jul 2, 2024
- International Business Machines Corporation
- Julien Frougier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile associative memory cell, non-volatile associative memo...
- Patent number 12,009,019
- Issue date Jun 11, 2024
- TDK Corporation
- Yuji Kakinuma
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistance memory on wide-bandgap semiconductor techno...
- Patent number 12,002,527
- Issue date Jun 4, 2024
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistorless memory cell
- Patent number 11,990,169
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile static random access memory (nvSRAM) with multiple mag...
- Patent number 11,984,164
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MIDPOINT SENSING REFERENCE GENERATION FOR STT-MRAM
- Publication number 20250061933
- Publication date Feb 20, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20250054530
- Publication date Feb 13, 2025
- SK HYNIX INC.
- Tae Jung HA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND ACCESS METHOD
- Publication number 20250046356
- Publication date Feb 6, 2025
- Huawei Technologies Co., Ltd
- Jeffrey Junhao XU
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...
- Publication number 20250028458
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jongsun PARK
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GATE DRIVER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME
- Publication number 20250014619
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Gyuseong Kang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE COMPRISING MEMORY CELLS STORING CALIBRATION DATA AND...
- Publication number 20250014620
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Chanho Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM
- Publication number 20250006237
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM
- Publication number 20240428836
- Publication date Dec 26, 2024
- KIOXIA Corporation
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT
- Publication number 20240428854
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Wu
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS
- Publication number 20240395301
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20240389470
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Kilho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE
- Publication number 20240363154
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240315147
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM) WITH MULTIPLE MAG...
- Publication number 20240296887
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE, MEMORY CELL ARRAY, METHOD FOR MANUFACTURING MEMORY...
- Publication number 20240274178
- Publication date Aug 15, 2024
- Sony Semiconductor Solutions Corporation
- HIROYUKI UCHIDA
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT ARRAY REFRESH SCHEME
- Publication number 20240265958
- Publication date Aug 8, 2024
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL
- Publication number 20240257852
- Publication date Aug 1, 2024
- Korea University Research and Business Foundation
- Jongsun PARK
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTORLESS MEMORY CELL
- Publication number 20240257853
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
POWER SUPPLY GENERATOR ASSIST
- Publication number 20240249761
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-An Chang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH MAGNETIC TUNNEL JUNCTIONS
- Publication number 20240251568
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY READOUT CIRCUIT AND METHOD
- Publication number 20240212771
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Min LIU
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20240203472
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
FORMING METHOD OF MEMORY DEVICE
- Publication number 20240087629
- Publication date Mar 14, 2024
- KIOXIA Corporation
- Naoki MATSUSHITA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY, MEMORY, PREPARING METHOD AND WRITING METHOD
- Publication number 20240023347
- Publication date Jan 18, 2024
- BEIHANG UNIVERSITY
- Weisheng ZHAO
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE ELECTRO-OPTICAL HIGH-BANDWIDTH ULTRA-FAST LARGE-SCALE...
- Publication number 20240021231
- Publication date Jan 18, 2024
- University of Southern California
- Ajey JACOB
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-REFERENCE STORAGE STRUCTURE AND STORAGE AND CALCULATION INTEGR...
- Publication number 20240005974
- Publication date Jan 4, 2024
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Guozhong XING
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...
- Publication number 20240008370
- Publication date Jan 4, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230410868
- Publication date Dec 21, 2023
- KIOXIA Corporation
- Hideyuki SUGIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
RAMP-BASED BIASING IN A MEMORY DEVICE
- Publication number 20230402094
- Publication date Dec 14, 2023
- Micron Technology, Inc.
- Hari Giduturi
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT ARRAY REFRESH SCHEME
- Publication number 20230386543
- Publication date Nov 30, 2023
- SANDISK TECHNOLOGIES LLC
- Michael Nicolas Albert Tran
- G06 - COMPUTING CALCULATING COUNTING

Cell access

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Spin-orbit torque type magnetoresistance effect element, and method...

Semiconductor storage apparatus

Storage cell and data read/write method and storage array thereof

Memory readout circuit and method

Semiconductor devices and hybrid transistors

Semiconductor memory device comprising magnetic tunnel junctions

Dropout in neutral networks using threshold switching selectors in...

Concurrent write to programmable resistance memory cells in cross-p...

Memory cell with unipolar selectors

Cache memory and method of its manufacture

In-memory computing unit and in-memory computing circuit having rec...

Synapse memory

Enhancing tunnel magnetoresistance in memory device comprising a me...

Memory device having bitline segmented into bitline segments and re...

One time programmable (OTP) magnetoresistive random-access memory (...

Midpoint sensing reference generation for STT-MRAM

Cross-point array IHOLD read margin improvement

Semiconductor apparatus and method for manufacturing the same

Memory device with tunable probabilistic state

Integrated device and neuromorphic device

Magnetoresistive memory device

Two bit memory device and method for operating the two-bit memory d...

Techniques for fiber tip re-imaging in LIDAR systems

Magnetic memory and reading/writing method thereof

Magnetic device and magnetic random access memory

Authenticity and yield by reading defective cells

Non-volatile associative memory cell, non-volatile associative memo...

Programmable resistance memory on wide-bandgap semiconductor techno...

Transistorless memory cell

Non-volatile static random access memory (nvSRAM) with multiple mag...

Patents Applicationslast 30 patents

MIDPOINT SENSING REFERENCE GENERATION FOR STT-MRAM

MEMORY DEVICE AND OPERATING METHOD THEREOF

MEMORY AND ACCESS METHOD

FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...

GATE DRIVER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME

MEMORY DEVICE COMPRISING MEMORY CELLS STORING CALIBRATION DATA AND...

MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM

MEMORY SYSTEM

OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT

CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS

NONVOLATILE MEMORY DEVICE

MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM) WITH MULTIPLE MAG...

STORAGE DEVICE, MEMORY CELL ARRAY, METHOD FOR MANUFACTURING MEMORY...

CROSS-POINT ARRAY REFRESH SCHEME

SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL

TRANSISTORLESS MEMORY CELL

POWER SUPPLY GENERATOR ASSIST

SEMICONDUCTOR DEVICE WITH MAGNETIC TUNNEL JUNCTIONS

MEMORY READOUT CIRCUIT AND METHOD

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

FORMING METHOD OF MEMORY DEVICE

MEMORY ARRAY, MEMORY, PREPARING METHOD AND WRITING METHOD

NON-VOLATILE ELECTRO-OPTICAL HIGH-BANDWIDTH ULTRA-FAST LARGE-SCALE...

SELF-REFERENCE STORAGE STRUCTURE AND STORAGE AND CALCULATION INTEGR...

SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...

MAGNETIC MEMORY DEVICE

RAMP-BASED BIASING IN A MEMORY DEVICE

CROSS-POINT ARRAY REFRESH SCHEME