characterised by physical imperfections having polished or roughened surface

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H01L29/30

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/30characterised by physical imperfections having polished or roughened surface

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 12,084,790
- Issue date Sep 10, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oxygen-doped group III metal nitride and method of manufacture
- Patent number 11,898,269
- Issue date Feb 13, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide seed crystal and method of manufacturing silicon ca...
- Patent number 11,821,105
- Issue date Nov 21, 2023
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide seed crystal and method of manufacturing the same,...
- Patent number 11,781,241
- Issue date Oct 10, 2023
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 11,680,340
- Issue date Jun 20, 2023
- AXT, Inc.
- Rajaram Shetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a programming element
- Patent number 11,444,090
- Issue date Sep 13, 2022
- Semiconductor Components Industries, LLC
- Jaume Roig-Guitart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a device fixed on a substrate with an a...
- Patent number 11,233,029
- Issue date Jan 25, 2022
- Mitsubishi Electric Corporation
- Kazuo Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium phosphide wafer having pits on the back side, method and etc...
- Patent number 11,094,549
- Issue date Aug 17, 2021
- Beijing Tongmei Xtal Technology Co., Ltd.
- Liugang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Skyrmion diode and method of manufacturing the same
- Patent number 11,024,726
- Issue date Jun 1, 2021
- UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Ki Suk Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Femtosecond laser-induced formation of submicrometer spikes on a se...
- Patent number 10,741,399
- Issue date Aug 11, 2020
- President and Fellows of Harvard College
- Eric Mazur
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Oxygen-doped group III metal nitride and method of manufacture
- Patent number 10,648,102
- Issue date May 12, 2020
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Skyrmion diode and method of manufacturing the same
- Patent number 10,497,800
- Issue date Dec 3, 2019
- UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Ki Suk Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for depositing a layer on a semiconductor wafer by vapor dep...
- Patent number 10,249,493
- Issue date Apr 2, 2019
- Siltronic AG
- Wilhelmus Aarts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 10,181,477
- Issue date Jan 15, 2019
- TOSHIBA MEMORY CORPORATION
- Hirokazu Ishigaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for growing a non-phase separated group-III nit...
- Patent number 10,000,381
- Issue date Jun 19, 2018
- Georgia Tech Research Corporation
- Michael William Moseley
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods for improving wafer planarity and bonded wafer assemblies m...
- Patent number 9,978,582
- Issue date May 22, 2018
- Ostendo Technologies, Inc.
- Gregory Batinica
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process flow for manufacturing semiconductor on insulator structure...
- Patent number 9,831,115
- Issue date Nov 28, 2017
- SunEdison Semiconductor Limited (UEN201334164H)
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,786,742
- Issue date Oct 10, 2017
- Kabushiki Kaisha Toshiba
- Takuma Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 9,748,390
- Issue date Aug 29, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing epitaxial wafer and the epitaxial wafer having...
- Patent number 9,685,315
- Issue date Jun 20, 2017
- SUMCO Corporation
- Sumihisa Masuda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method for producing the same
- Patent number 9,337,013
- Issue date May 10, 2016
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of treating substrate
- Patent number 9,306,118
- Issue date Apr 5, 2016
- Huga Optotech Inc.
- Chiung-Chi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Packaged nano-structured component and method of making a packaged...
- Patent number 9,249,014
- Issue date Feb 2, 2016
- Infineon Technologies Austria AG
- Khalil Hosseini
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
III-N device structures and methods
- Patent number 9,224,671
- Issue date Dec 29, 2015
- Transphorm Inc.
- Primit Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor field effect transistor with reduced surf...
- Patent number 9,196,681
- Issue date Nov 24, 2015
- Maxim Integrated Products, Inc.
- Vishnu Khemka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal, SiC wafer, and semiconductor device
- Patent number 9,166,008
- Issue date Oct 20, 2015
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal substrate
- Patent number 9,035,429
- Issue date May 19, 2015
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Flat SiC semiconductor substrate
- Patent number 9,018,639
- Issue date Apr 28, 2015
- Dow Corning Corporation
- Mark Loboda
- B24 - GRINDING POLISHING
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 8,963,290
- Issue date Feb 24, 2015
- Dowa Electronics Materials Co., Ltd.
- Ryuichi Toba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and method of producing same
- Patent number 8,952,496
- Issue date Feb 10, 2015
- Sumco Corporation
- Sumihisa Masuda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
- Publication number 20240183074
- Publication date Jun 6, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- C01 - INORGANIC CHEMISTRY
Information Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
- Publication number 20240133076
- Publication date Apr 25, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ROUGHENED SIDEWALL AND METHOD OF MANUF...
- Publication number 20240063272
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- JEN-YUAN CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20230407522
- Publication date Dec 21, 2023
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20210327886
- Publication date Oct 21, 2021
- Semiconductor Components Industries, LLC
- Jaume ROIG-GUITART
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
- Publication number 20200263321
- Publication date Aug 20, 2020
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM PHOSPHIDE WAFER HAVING PITS ON THE BACK SIDE, METHOD AND ETC...
- Publication number 20200227268
- Publication date Jul 16, 2020
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Liugang WANG
- B24 - GRINDING POLISHING
Information Patent Application
SKYRMION DIODE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200105912
- Publication date Apr 2, 2020
- UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Ki Suk LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODES FOR LOCALIZED CONTROL FACILITATING THE INTEGRATION OF PO...
- Publication number 20180151379
- Publication date May 31, 2018
- THE UNITED STATES GOVERNMENT AS REPRESENTED BY THE SECRETARY OF THE ARMY
- MATTHEW HENDERSON ERVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR GROWING A NON-PHASE SEPARATED GROUP-III NIT...
- Publication number 20180118568
- Publication date May 3, 2018
- Georgia Tech Research Corporation
- Michael William Moseley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELEMENT CHIP AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20170263501
- Publication date Sep 14, 2017
- Panasonic Intellectual Property Management Co., Ltd.
- BUNZI MIZUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20170263633
- Publication date Sep 14, 2017
- KABUSHIKI KAISHA TOSHIBA
- Hirokazu ISHIGAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SKYRMION DIODE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20170256633
- Publication date Sep 7, 2017
- UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Ki Suk LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FLOW FOR MANUFACTURING SEMICONDUCTOR ON INSULATOR STRUCTURE...
- Publication number 20170243781
- Publication date Aug 24, 2017
- SunEdison Semiconductor Limited (UEN201334164H)
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEP...
- Publication number 20170194137
- Publication date Jul 6, 2017
- Siltronic AG
- Wilhelmus Aarts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Improving Wafer Planarity and Bonded Wafer Assemblies M...
- Publication number 20170178891
- Publication date Jun 22, 2017
- OSTENDO TECHNOLOGIES, INC.
- Gregory Batinica
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170077237
- Publication date Mar 16, 2017
- Kabushiki Kaisha Toshiba
- Takuma Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming the Same
- Publication number 20160322496
- Publication date Nov 3, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON SINGLE CRYSTAL INGOT AND WAFER FOR SEMICONDUCTOR
- Publication number 20160160388
- Publication date Jun 9, 2016
- LG SILTRON INC.
- Young Ho HONG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...
- Publication number 20160043182
- Publication date Feb 11, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Systems And Methods For Growing A Non-Phase Separated Group-III Nit...
- Publication number 20160009556
- Publication date Jan 14, 2016
- Georgia Tech Research Corporation
- Michael William Moseley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20150371966
- Publication date Dec 24, 2015
- Mitsubishi Electric Corporation
- Kazuo YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N DEVICE STRUCTURES AND METHODS
- Publication number 20150041861
- Publication date Feb 12, 2015
- TRANSPHORM INC.
- Primit Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER AND METHOD OF PRODUCING SAME
- Publication number 20140264765
- Publication date Sep 18, 2014
- SUMCO CORPORATION
- Sumihisa Masuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Packaged Nano-Structured Component and Method of Making a Packaged...
- Publication number 20140126165
- Publication date May 8, 2014
- Infineon Technologies Austria AG
- Khalil Hosseini
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
FLAT SIC SEMICONDUCTOR SUBSTRATE
- Publication number 20140117380
- Publication date May 1, 2014
- Dow Corning Corporation
- Mark LOBODA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING THE SAME
- Publication number 20140103492
- Publication date Apr 17, 2014
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
III-N Device Structures and Methods
- Publication number 20140099757
- Publication date Apr 10, 2014
- TRANSPHORM INC.
- Primit Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE
- Publication number 20140027787
- Publication date Jan 30, 2014
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20140015105
- Publication date Jan 16, 2014
- WAVESQUARE INC.
- Ryuichi Toba
- H01 - BASIC ELECTRIC ELEMENTS

characterised by physical imperfections having polished or roughened surface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Oxygen-doped group III metal nitride and method of manufacture

Silicon carbide seed crystal and method of manufacturing silicon ca...

Silicon carbide seed crystal and method of manufacturing the same,...

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Semiconductor device having a programming element

Semiconductor device having a device fixed on a substrate with an a...

Indium phosphide wafer having pits on the back side, method and etc...

Skyrmion diode and method of manufacturing the same

Femtosecond laser-induced formation of submicrometer spikes on a se...

Oxygen-doped group III metal nitride and method of manufacture

Skyrmion diode and method of manufacturing the same

Method for depositing a layer on a semiconductor wafer by vapor dep...

Semiconductor device and method for manufacturing same

Systems and methods for growing a non-phase separated group-III nit...

Methods for improving wafer planarity and bonded wafer assemblies m...

Process flow for manufacturing semiconductor on insulator structure...

Semiconductor device

Semiconductor device and method of forming the same

Method of producing epitaxial wafer and the epitaxial wafer having...

Silicon wafer and method for producing the same

Method of treating substrate

Packaged nano-structured component and method of making a packaged...

III-N device structures and methods

Metal oxide semiconductor field effect transistor with reduced surf...

SiC single crystal, SiC wafer, and semiconductor device

Group III nitride crystal substrate

Flat SiC semiconductor substrate

Semiconductor device and manufacturing method therefor

Semiconductor wafer and method of producing same

Patents Applicationslast 30 patents

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

SEMICONDUCTOR STRUCTURE WITH ROUGHENED SIDEWALL AND METHOD OF MANUF...

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

METHOD OF FORMING A SEMICONDUCTOR DEVICE

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

INDIUM PHOSPHIDE WAFER HAVING PITS ON THE BACK SIDE, METHOD AND ETC...

SKYRMION DIODE AND METHOD OF MANUFACTURING THE SAME

ELECTRODES FOR LOCALIZED CONTROL FACILITATING THE INTEGRATION OF PO...

SYSTEMS AND METHODS FOR GROWING A NON-PHASE SEPARATED GROUP-III NIT...

ELEMENT CHIP AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SKYRMION DIODE AND METHOD OF MANUFACTURING THE SAME

PROCESS FLOW FOR MANUFACTURING SEMICONDUCTOR ON INSULATOR STRUCTURE...

METHOD FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEP...

Methods for Improving Wafer Planarity and Bonded Wafer Assemblies M...

SEMICONDUCTOR DEVICE

Semiconductor Device and Method of Forming the Same

SILICON SINGLE CRYSTAL INGOT AND WAFER FOR SEMICONDUCTOR

METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...

Systems And Methods For Growing A Non-Phase Separated Group-III Nit...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

III-N DEVICE STRUCTURES AND METHODS

SEMICONDUCTOR WAFER AND METHOD OF PRODUCING SAME

Packaged Nano-Structured Component and Method of Making a Packaged...

FLAT SIC SEMICONDUCTOR SUBSTRATE

SILICON WAFER AND METHOD FOR PRODUCING THE SAME

III-N Device Structures and Methods

SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR