characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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CPC
H01L21/26586

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/26586characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Industries

Patents Grantslast 30 patents

Information Patent Grant
NAND string utilizing floating body memory cell
- Patent number 12,171,093
- Issue date Dec 17, 2024
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure with air gap and method sealing the air gap
- Patent number 12,165,912
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,166,069
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zheng-Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diffusion suppression and LDD implants an...
- Patent number 12,154,901
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double-diffused metal oxide semiconductor device and manufa...
- Patent number 12,154,983
- Issue date Nov 26, 2024
- CSMC Technologies Fab2 Co., Ltd.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stack
- Patent number 12,132,096
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-balance power device, and process for manufacturing the char...
- Patent number 12,113,103
- Issue date Oct 8, 2024
- STMicroelectronics S.r.l.
- Antonello Santangelo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform implant regions in a semiconductor ridge of a FinfET
- Patent number 12,113,121
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with implant and method of manufacturing same
- Patent number 12,100,738
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for FinFET device with source/drain modulation
- Patent number 12,080,607
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-balancing super junction structure and preparation method thereof
- Patent number 12,074,197
- Issue date Aug 27, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO. LTD.
- Daili Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFET LDD doping
- Patent number 12,068,371
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Line-end extension method and device
- Patent number 12,062,543
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Min Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor by tilted implant...
- Patent number 12,062,707
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for barrier-less plug
- Patent number 12,051,592
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for an ion implantation process employing an ion-collecting...
- Patent number 12,051,593
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Jung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device having position-depende...
- Patent number 12,046,638
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,046,674
- Issue date Jul 23, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor device and method for forming a superjunct...
- Patent number 12,034,040
- Issue date Jul 9, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure and manufacturing method thereof
- Patent number 12,027,584
- Issue date Jul 2, 2024
- Macronix International Co., Ltd.
- Jeng Hwa Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, power conversion device, and...
- Patent number 12,027,590
- Issue date Jul 2, 2024
- Mitsubishi Electric Corporation
- Munetaka Noguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 12,021,082
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,015,082
- Issue date Jun 18, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-rotation gate-edge diode leakage reduction for MOS transistors
- Patent number 12,009,423
- Issue date Jun 11, 2024
- Texas Instruments Incorporated
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and technique for creating implanted regions using multiple...
- Patent number 12,002,852
- Issue date Jun 4, 2024
- Applied Materials, Inc.
- Venkataramana R. Chavva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating diode structure
- Patent number 11,996,464
- Issue date May 28, 2024
- Jiangsu Advanced Memory Technology Co., Ltd.
- Chieh-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,984,322
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tien-Shun Chang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
MOSFET devices and manufacturing methods thereof
- Patent number 11,984,505
- Issue date May 14, 2024
- Changxin Memory Technologies, Inc.
- ChihCheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduce well dopant loss in FinFETs through co-implantation
- Patent number 11,978,634
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sih-Jie Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with doped region between gate and drain
- Patent number 11,978,797
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lian-Jie Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BURIED CHANNEL SEMICONDUCTOR DEVICE INCLUDING ENERGY BARRIER MODULA...
- Publication number 20240405125
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Jack G. Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...
- Publication number 20240395877
- Publication date Nov 28, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20240387691
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Reducing Line-End Space in Integrated Circuit Patterning
- Publication number 20240385526
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jing-Huei Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Dopant Source/Drain Regions and Methods of Forming Same
- Publication number 20240379446
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FINFET DEVICE WITH SOURCE/DRAIN MODULATION
- Publication number 20240363435
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SPACERS AND MANUFACTURING METHOD THEREOF
- Publication number 20240355898
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR BARRIER-LESS PLUG
- Publication number 20240347342
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ION IMPLANTATION THAT ADJUSTS A TARGET'S TILT ANGLE BASE...
- Publication number 20240347341
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Jung HUANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUPERJUNCTION TRANSISTOR DEVICE
- Publication number 20240321953
- Publication date Sep 26, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPFET TRANSISTOR
- Publication number 20240322038
- Publication date Sep 26, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS
- Publication number 20240304723
- Publication date Sep 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240266391
- Publication date Aug 8, 2024
- Vanguard International Semiconductor Corporation
- Wen-Shan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240258114
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tien-Shun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CREATION OF A TRANSISTOR WITH CLOSE SILICIDE SOURCE AND DRAIN FROM...
- Publication number 20240249945
- Publication date Jul 25, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DOPED REGION BETWEEN GATE AND DRAIN
- Publication number 20240250170
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lian-Jie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCE WELL DOPANT LOSS IN FINFETS THROUGH CO-IMPLANTATION
- Publication number 20240249944
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sih-Jie Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240234413
- Publication date Jul 11, 2024
- RENESAS ELECTRONICS CORPORATION
- Natsumi IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE A...
- Publication number 20240223087
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu Fu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Reducing Gate Spacer Loss During Semiconductor Manufactu...
- Publication number 20240194480
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Trench MOSFET Contacts Having Widths Less Than Minimum...
- Publication number 20240178064
- Publication date May 30, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Mitsuru SOMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND A SEMICONDUCTOR D...
- Publication number 20240153953
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hung CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20240145247
- Publication date May 2, 2024
- INFINEON TECHNOLOGIES AG
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTAMINANT COLLECTION ON SOI
- Publication number 20240145603
- Publication date May 2, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Honglin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240136352
- Publication date Apr 25, 2024
- RENESAS ELECTRONICS CORPORATION
- Natsumi IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SUPERJUNCTION DEVICE
- Publication number 20240128356
- Publication date Apr 18, 2024
- Infineon Technologies Austria AG
- Daniel Tutuc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...
- Publication number 20240088262
- Publication date Mar 14, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240088152
- Publication date Mar 14, 2024
- KIOXIA Corporation
- Tomoaki SHINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINE-END EXTENSION METHOD AND DEVICE
- Publication number 20240087896
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Min HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION METHOD AND ION IMPLANTER
- Publication number 20240047176
- Publication date Feb 8, 2024
- Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Yoji Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

NAND string utilizing floating body memory cell

Semiconductor structure with air gap and method sealing the air gap

Semiconductor device and manufacturing method thereof

Semiconductor device with diffusion suppression and LDD implants an...

Lateral double-diffused metal oxide semiconductor device and manufa...

Semiconductor device structure with metal gate stack

Charge-balance power device, and process for manufacturing the char...

Uniform implant regions in a semiconductor ridge of a FinfET

Semiconductor device with implant and method of manufacturing same

Structure and method for FinFET device with source/drain modulation

Self-balancing super junction structure and preparation method thereof

Method for FinFET LDD doping

Line-end extension method and device

Method of manufacturing a field effect transistor by tilted implant...

Method and structure for barrier-less plug

Method for an ion implantation process employing an ion-collecting...

Fin field effect transistor (FinFET) device having position-depende...

DEPFET transistor and method of manufacturing a DEPFET transistor

Superjunction transistor device and method for forming a superjunct...

Transistor structure and manufacturing method thereof

Silicon carbide semiconductor device, power conversion device, and...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

DEPFET transistor and method of manufacturing a DEPFET transistor

Two-rotation gate-edge diode leakage reduction for MOS transistors

System and technique for creating implanted regions using multiple...

Method of fabricating diode structure

Semiconductor device and manufacturing method thereof

MOSFET devices and manufacturing methods thereof

Reduce well dopant loss in FinFETs through co-implantation

Semiconductor device with doped region between gate and drain

Patents Applicationslast 30 patents

BURIED CHANNEL SEMICONDUCTOR DEVICE INCLUDING ENERGY BARRIER MODULA...

SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

Method for Reducing Line-End Space in Integrated Circuit Patterning

Dual Dopant Source/Drain Regions and Methods of Forming Same

STRUCTURE AND METHOD FOR FINFET DEVICE WITH SOURCE/DRAIN MODULATION

FIELD EFFECT TRANSISTOR WITH SPACERS AND MANUFACTURING METHOD THEREOF

METHOD AND STRUCTURE FOR BARRIER-LESS PLUG

METHOD FOR ION IMPLANTATION THAT ADJUSTS A TARGET'S TILT ANGLE BASE...

SUPERJUNCTION TRANSISTOR DEVICE

DEPFET TRANSISTOR

TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CREATION OF A TRANSISTOR WITH CLOSE SILICIDE SOURCE AND DRAIN FROM...

SEMICONDUCTOR DEVICE WITH DOPED REGION BETWEEN GATE AND DRAIN

REDUCE WELL DOPANT LOSS IN FINFETS THROUGH CO-IMPLANTATION

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE A...

Methods of Reducing Gate Spacer Loss During Semiconductor Manufactu...

Self-Aligned Trench MOSFET Contacts Having Widths Less Than Minimum...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND A SEMICONDUCTOR D...

ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE

CONTAMINANT COLLECTION ON SOI

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR PRODUCING A SUPERJUNCTION DEVICE

CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...

SEMICONDUCTOR DEVICE

LINE-END EXTENSION METHOD AND DEVICE

ION IMPLANTATION METHOD AND ION IMPLANTER