Patent Application
20240234413
The disclosure of Japanese Patent Application No. 2022-170855 filed on Oct. 25, 2022, including the specification, drawings and abstract is incorporated herein by reference in its entirety.
The present disclosure relates to a semiconductor device and a manufacturing method of the same, and can be suitably used, for example, in the semiconductor device including an oscillation circuit and the manufacturing method of the same.
There are disclosed techniques listed below.
Improving a performance of the semiconductor device including the oscillation circuit is desirable.
Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.
According to one embodiment, a semiconductor device including an oscillation circuit includes a semiconductor substrate, a plurality of first MISFETs formed in the semiconductor substrate, and a plurality of second MISFETs formed in the semiconductor substrate. Each of the plurality of first MISFETs includes a halo region, and each of the plurality of second MISFETs includes no halo region. The plurality of second MISFETs is used as a pair transistor included in the oscillation circuit.
According to one embodiment, the performance of the semiconductor device including the oscillation circuit can be improved.
In the following embodiments, when required for convenience, the description will be made by dividing into a plurality of sections or embodiments, but except when specifically stated, they are not independent of each other, and one is related to the modified example, detail, supplementary description, or the like of part or all of the other. In the following embodiments, the number of elements, etc. (including the number of elements, numerical values, quantities, ranges, etc.) is not limited to the specific number, but may be not less than or equal to the specific number, except for cases where the number is specifically indicated and is clearly limited to the specific number in principle. Furthermore, in the following embodiments, it is needless to say that the constituent elements (including element steps and the like) are not necessarily essential except in the case where they are specifically specified and the case where they are considered to be obviously essential in principle. Similarly, in the following embodiments, when referring to the shapes, positional relationships, and the like of components and the like, it is assumed that the shapes and the like are substantially approximate to or similar to the shapes and the like, except for the case in which they are specifically specified and the case in which they are considered to be obvious in principle, and the like. The same applies to the above numerical values and ranges.
Hereinafter, embodiments will be described in detail based on the drawings. In all the drawings for explaining the embodiments, members having the same functions are denoted by the same reference numerals, and repetitive descriptions thereof are omitted. In the following embodiments, descriptions of the same or similar parts will not be repeated in principle except when particularly necessary.
In the drawings used in the embodiments, hatching may be omitted even in the case of cross-sectional view in order to make the drawings easier to see. Also, even in the case of a plan view, hatching may be used to make the drawing easier to see.
Note that an X-direction, a Y-direction, and a Z-direction shown in
In the present embodiment, the semiconductor device includes a plurality of MISFETs (Metal Insulator Semiconductor Field Effect Transistor) each having the halo region (pocket region) and a plurality of MISFETs each having no halo region (pocket region).
As will be described later, the semiconductor device in the present embodiment includes the oscillation circuit. The MISFETs 2,3 having no halo regions are used as a MISFET configuring a pair transistor included in the oscillation circuit.
In the following description, the MISFETs 1,2,3 are described as n-channel type transistors, but may be p-channel type transistors.
As shown in
The element isolation region ST is buried in the trench in the main surface of the semiconductor substrate SB. Each of the MISFET forming regions 1A,2A,3A is surrounded by the element isolation region ST in plan view.
The element isolation region ST is formed by an STI (Shallow Trench Isolation) method. For this reason, the element isolation region ST is formed of an insulator (dielectric film) buried in the trench formed in the semiconductor substrate SB. The element isolation region ST is mainly formed of silicon oxide.
A p-type well (p-type well region) PW1 is formed in the semiconductor substrate SB in the MISFET forming region 1A and a p-type well (p-type well region) PW2 is formed in the semiconductor substrate SB in the MISFET forming regions 2A,3A. The p-type wells PW1,PW2 are p-type semiconductor regions into which a p-type impurity is implanted. The depth positions of the bottom surfaces of the p-type wells PW1,PW2 are deeper than the depth position of the bottom surface of the element isolation region ST. The MISFET forming region 2A and the MISFET forming region 3A are adjacent to each other in plan view via the element isolation region ST, and the p-type well PW2 is formed over the MISFET forming region 2A and MISFET forming region 3A. Therefore, in plan view, the MISFET forming regions 2A,3A are included in the p-type well PW2.
Hereinafter, the configurations of the MISFETs 1,2,3 will be described.
First, the configuration of the MISFET 1 will be described in detail with reference to
The MISFET 1 includes the gate electrode G1 formed on the semiconductor substrate SB (p-type well PW1) in the MISFET forming region 1A via a gate dielectric film GF1, and n-type semiconductor regions S1,D1 acting as source/drain (source and/or drain) formed on both sides of the gate electrode G1 and in the semiconductor substrate in plan view.
The gate electrode G1 extends in the Y-direction so as to be across the MISFET forming region 1A in plan view. Therefore, the gate electrode G1 is continuously formed over the semiconductor substrate SB in the MISFET forming region 1A and the element isolation region ST around the MISFET forming region 1A. The gate dielectric film GF1 is interposed between the semiconductor substrate SB (p-type well PW1) and the gate electrode G1. The element isolation region ST and the gate electrode G1 may be in contact with each other, although the gate dielectric film GF1 may be interposed between the element isolation region ST and the gate electrode G1.
A region under the gate electrode G1 and in the semiconductor substrate SB (p-type well PW1) in the MISFET forming region 1A is a region in which a channel is formed, that is, a channel forming region. The channel forming region of the MISFET 1 is formed in the surface layer portion of the semiconductor substrate SB and is adjacent to the gate dielectric film GF1 located under the gate electrode G1.
Sidewall spacers SW are formed as sidewall dielectric film on the sidewalls of the gate electrode G1. The sidewall spacers SW are formed of dielectric films, and may be formed of a single film or a stacked film.
In plan view, a pair of n-type semiconductor regions D1,S1 is formed so as to sandwich the gate electrode G1 in the X-direction, one of which (here, the n-type semiconductor region S1) functions as a source region of the MISFET 1, and the other of which (here, the n-type semiconductor region D1) functions as a drain region of the MISFET 1. The n-type semiconductor regions D1,S1 are formed in the semiconductor substrate SB (p-type well PW1) in the MISFET forming region 1A. The pair of n-type semiconductor regions D1,S1 has an LDD (Lightly doped Drain) structure.
Therefore, the n-type semiconductor region S1 is formed of the n-type semiconductor region (extension region, low concentration region) S1a having a low impurity concentration and the n-type semiconductor region (high concentration region) S1b having an impurity concentration higher than the impurity concentration of the n-type semiconductor region S1a.
The n-type semiconductor region D1 is formed of the n-type semiconductor region (extension region, low concentration region) D1a having a low impurity concentration and the n-type semiconductor region (high concentration region) D1b having an impurity concentration higher than the impurity concentration of the n-type semiconductor region D1a. The impurity concentration (n-type impurity concentration) of the n-type semiconductor region D1b is higher than the impurity concentration (n-type impurity concentration) of the n-type semiconductor region D1a, and the impurity concentration (n-type impurity concentration) of the n-type semiconductor region S1b is higher than the impurity concentration (n-type impurity concentration) of the n-type semiconductor region S1a.
The n-type semiconductor regions D1a,S1a are formed in a self-aligned manner with the gate electrode G1, and the n-type semiconductor regions D1b,S1b is formed in a self-aligned manner with the sidewall spacers SW formed on the sidewalls of the gate electrode G1. Therefore, the n-type semiconductor region D1a is located under the sidewall spacer SW on one sidewall of the gate electrode G1, the n-type semiconductor region S1a is located under the sidewall spacer SW on the other sidewall of the gate electrode G1, and the n-type semiconductor region D1a and the n-type semiconductor region S1a are spaced apart from each other with the channel forming region interposed therebetween (spaced apart in the X-direction). The n-type semiconductor regions D1b,S1b having high concentrations are formed on the outer side (away from the channel forming region) of the n-type semiconductor regions D1a,S1a having low concentrations. The n-type semiconductor region D1b is formed at a position being adjacent to the n-type semiconductor region D1a and being spaced apart from the channel forming region by an amount corresponding to the n-type semiconductor region D1a (spaced apart in the X-direction). The n-type semiconductor region S1b is formed at a position being adjacent to the n-type semiconductor region S1a and being spaced apart from the channel forming region by an amount corresponding to the n-type semiconductor region S1a (spaced apart in the X-direction). The n-type semiconductor region D1a is interposed between the channel forming region and the n-type semiconductor region D1b, and the n-type semiconductor region S1a is interposed between the channel forming region and the n-type semiconductor region S1b.
Each of the n-type semiconductor regions D1,S1 is formed in the semiconductor substrate SB (p-type well PW1) in the MISFET forming region 1A, and extends in the Y-direction along the gate electrode G1. Therefore, each of the n-type semiconductor region D1a and the n-type semiconductor region D1b configuring the n-type semiconductor region D1 extends in the Y-direction along the gate electrode G1, and each of the n-type semiconductor region S1a and the n-type semiconductor region S1b configuring the n-type semiconductor region S1 extends in the Y-direction along the gate electrode G1.
Next, the configuration of the MISFET 2 will be described with reference to
The MISFET 2 includes the gate electrode G2 formed on the semiconductor substrate SB in the MISFET forming region 2A (on the p-type well PW2) via a gate dielectric film GF2, and n-type semiconductor regions D2,S2 acting as source/drain (source or drain) formed on both sides of the gate electrode G2 and in the semiconductor substrate SB in plan view.
The n-type semiconductor regions D2,S2 are formed in the semiconductor substrate SB (p-type well PW2) in the MISFET forming region 2A. The n-type semiconductor region D2 includes the n-type semiconductor region (extension region, low concentration region) D2a having a low impurity concentration and the n-type semiconductor region (high concentration region) D2b having an impurity concentration higher than the impurity concentration of the n-type semiconductor region D2a. The n-type semiconductor region S2 includes the n-type semiconductor region (extension region, low concentration region) S2a having a low impurity concentration and the n-type semiconductor region (high concentration region) S2b having an impurity concentration higher than the impurity concentration of the n-type semiconductor region S2a.
Since the above description of the “CONFIGURATION OF MISFET 1” can be applied to the description of the gate electrode G2, the gate dielectric film GF2, the n-type semiconductor region D2, the n-type semiconductor region D2a, the n-type semiconductor region D2b, the n-type semiconductor region S2, the n-type semiconductor region S2a, the n-type semiconductor region S2b, and the sidewall spacers SW, repetitive description thereof will be omitted here. However, when the description in “CONFIGURATION OF MISFET 1” is used as the description in the “CONFIGURATION OF MISFET 2”, the following replacement of terms is required. That is, the “MISFET 1” is read as the “MISFET 2”, the “MISFET forming region 1A” is read as the “MISFET forming region 2A”, the “p-type well PW1” is read as the “p-type well PW2”, the “gate electrode G1” is read as the “gate electrode G2”, and the “gate dielectric film GF1” is read as the “gate dielectric film GF2”. Further, the “n-type semiconductor region D1” is read as the “n-type semiconductor region D2”, the “n-type semiconductor region D1a” is read as the “n-type semiconductor region D2a”, and the “n-type semiconductor region D1b” is read as the “n-type semiconductor region D2b”. Further, the “n-type semiconductor region S1” is read as the “n-type semiconductor region S2”, the “n-type semiconductor region S1a” is read as the “n-type semiconductor region S2a”, and the “n-type semiconductor region S1b” is read as the “n-type semiconductor region S2b”.
Next, the configuration of the MISFET 3 will be described with reference to
The configuration of the MISFET 2 and the configuration of the MISFET 3 are basically the same as each other. The MISFET 3 includes the gate electrode G3 formed on the semiconductor substrate SB in the MISFET forming region 3A (on the p-type well PW2) via a gate dielectric film GF3, and n-type semiconductor regions D3,S3 acting as source/drain formed on both sides of the gate electrode G3 and in the semiconductor substrate SB in plan view.
The n-type semiconductor regions D3,S3 are formed in the semiconductor substrate SB (p-type well PW2) in the MISFET forming region 3A. The n-type semiconductor region D3 includes the n-type semiconductor region (extension region, low concentration region) D3a having a low impurity concentration and the n-type semiconductor region (high concentration region) D3b having an impurity concentration higher than the impurity concentration of the n-type semiconductor region D3a. The n-type semiconductor region S3 includes the n-type semiconductor region (extension region, low concentration region) S3a having a low impurity concentration and the n-type semiconductor region (high concentration region) S3b having an impurity concentration higher than the impurity concentration of the n-type semiconductor region S3a.
Since the above description of the “CONFIGURATION OF MISFET 1” can be applied to the description of the gate electrode G3, the gate dielectric film GF3, the n-type semiconductor region D3, the n-type semiconductor region D3a, the n-type semiconductor region D3b, the n-type semiconductor region S3, the n-type semiconductor region S3a, the n-type semiconductor region S3b, and the sidewall spacers SW, repetitive description thereof will be omitted here. However, when the description in “CONFIGURATION OF MISFET 1” is used as the description in the “CONFIGURATION OF MISFET 3”, the following replacement of terms is required. That is, the “MISFET 1” is read as the “MISFET 3”, the “MISFET forming region 1A” is read as the “MISFET forming region 3A”, the “p-type well PW1” is read as the “p-type well PW2”, the “gate electrode G1” is read as the “gate electrode G3”, and the “gate dielectric film GF1” is read as the “gate dielectric film GF3”. Further, the “n-type semiconductor region D1” is read as the “n-type semiconductor region D3”, the “n-type semiconductor region D1a” is read as the “n-type semiconductor region D3a”, and the “n-type semiconductor region D1b” is read as the “n-type semiconductor region D3b”. Further, the “n-type semiconductor region S1” is read as the “n-type semiconductor region S3”, the “n-type semiconductor region S1a” is read as the “n-type semiconductor region S3a”, and the “n-type semiconductor region S1b” is read as the “n-type semiconductor region S3b”.
The MISFET 1 further includes the p-type halo regions (p-type semiconducting region, p-type pocket region) HA1,HA2 formed in the semiconductor substrate SB (p-type well PW1) in the MISFET forming region 1A. In contrast, the MISFET 2 and the MISFET 3 do not include p-type halo regions (p-type pocket regions). Therefore, regions corresponding to the p-type halo regions HA1,HA2 are not formed in the semiconductor substrate SB (p-type well PW2) in the MISFET forming region 2A and in the semiconductor substrate SB (p-type well PW2) in the MISFET forming region 3A. Hereinafter, the p-type halo regions HA1,HA2 of the MISFET 1 will be described.
As shown in
Therefore, the p-type halo region HA1 is adjacent to the side surface (the side surface facing the n-type semiconductor region S1a) and the lower surface of the n-type semiconductor region D1a, and the p-type halo region HA2 is adjacent to the side surface (the side surface facing the n-type semiconductor region D1a) and the lower surface of the n-type semiconductor region S1a. A portion of each of the p-type halo regions HA1,HA2 overlaps with the gate electrode G1 in plan view. The p-type halo regions HA1,HA2 have conductivity types opposite to the conductivity types of the n-type semiconductor regions D1a,S1a,D1b,S1b and the same conductivity type as the conductivity type of the p-type well PW1, and has an impurity concentration (p-type impurity concentration) higher than the impurity concentration of the p-type well PW1. The p-type impurity concentrations of the p-type halo regions HA1,HA2 can be, for example, about 2×1017 to 1×1019 cm3. The p-type impurity concentration of the p-type well PW1 can be, for example, about 1×1017 to 5×1018 cm3.
As will be described later, the ion implantation for forming the p-type halo regions HA1,HA2 uses an oblique ion implantation, whereby the p-type halo regions HA1,HA2 can be formed so as to cover the n-type semiconductor regions D1a,S1a. In general ion implantation (vertical ion implantation), impurity ions are accelerated and injected in a direction orthogonal to the main surface of the semiconductor substrate SB, but in oblique ion implantation, impurity ions are accelerated and injected in a direction inclined at a predetermined angle from the direction orthogonal to the main surface of the semiconductor substrate SB.
In the X-direction, the n-type semiconductor region D1a and the p-type halo region HA1 are adjacent to each other and the n-type semiconductor region S1a and the p-type halo region HA2 are adjacent to each other. A portion of the p-type halo region HA1 adjacent to the n-type semiconductor region D1a in the X-direction is located under the gate electrode G1, and a portion of the p-type halo region HA2 adjacent to the n-type semiconductor region S1a in the X-direction is located under the gate electrode G1. From another viewpoint, a portion adjacent to the n-type semiconductor region D1a in the X-direction of the p-type halo region HA1 overlaps with the gate electrode G1 in plan view, and a portion adjacent to the n-type semiconductor region S1a in the X-direction of the p-type halo region HA2 overlaps with the gate electrode G1 in plan view. The p-type halo regions HA1,HA2 (that is, the p-type halo regions HA1,HA2 overlapping with the gate electrode G1 in plan view) located under the gate electrode G1 can function as a part of the channel forming region.
the gate dielectric film GF1 of the MISFET 1, the gate dielectric film GF2 of the MISFET 2 and the gate dielectric film GF3 of the MISFET 3 are formed in the same manufacturing step. For this reason, the gate dielectric film GF1, the gate dielectric film GF2 and the gate dielectric film GF3 are formed of the same dielectric material (for example, silicon oxide), and the thickness of the gate dielectric film GF1, the thickness of the gate dielectric film GF2, and the thickness of the gate dielectric film GF3 are the same as one another.
The gate electrode G1 of the MISFET 1, the gate electrode G2 of the MISFET 2, and the gate electrode G3 of the MISFET 3 are formed in the same manufacturing step. That is, the gate electrode G1, the gate electrode G2, and the gate electrode G3 are formed by patterning a common conductive film (for example, a polysilicon film). Therefore, the gate electrode G1, the gate electrode G2, and the gate electrode G3 are made of the same conductive material (for example, polysilicon), and the thickness of the gate electrode G1, the thickness of the gate electrode G2, and the thickness of the gate electrode G3 are the same as one another.
The n-type semiconductor regions D1a,S1a and the p-type halo regions HA1,HA2 of the MISFET 1 are formed after forming the gate electrode G1 and prior to forming the sidewall spacers SW on the sidewalls of the gate electrode G1. The n-type semiconductor regions D1a,S1a are formed by the vertical ion implantation using n-type impurities, and the p-type halo regions HA1,HA2 are formed by the oblique ion implantation using p-type impurities.
The n-type semiconductor regions D2a,S2a of the MISFET 2 are formed by the vertical ion implantation with n-type impurities after forming the gate electrode G2 and prior to forming the sidewall spacers SW on the sidewalls of the gate electrode G2. The n-type semiconductor regions D3a,S3a of the MISFET 3 are formed by vertical ion implantation using n-type impurities after forming the gate electrode G3 and prior to forming the sidewall spacers SW on the sidewalls of the gate electrode G3.
Since the MISFET 2 does not have a p-type halo region, an oblique ion implantation with p-type impurities is not performed to the semiconductor substrate SB (p-type well PW2) in the MISFET forming region 2A after forming the gate electrode G2 and prior to forming the sidewall spacers SW on the sidewalls of the gate electrode G2. Further, since the MISFET 3 does not have a p-type halo region, an oblique ion implantation using p-type impurities is not performed to the semiconductor substrate SB (p-type well PW2) in the MISFET forming region 3A after forming the gate electrode G3 and prior to forming the sidewall spacers SW on the sidewalls of the gate electrode G3. This can be realized by performing an oblique ion implantation for forming the p-type halo regions HA1,HA2 in a state where a photoresist pattern covering the semiconductor substrate SB and the gate electrodes G2,G3 in the MISFET forming regions 2A,3A and exposing the semiconductor substrate SB and the gate electrode G1 in the MISFET forming region 1A is formed.
Since the n-type semiconductor regions D2b,S2b and the n-type semiconductor regions D3b,S3b are formed in the same ion implantation step, the impurity concentrations (n-type impurity concentrations) of the n-type semiconductor regions D2b,S2b and the impurity concentrations (n-type impurity concentrations) of the n-type semiconductor regions D3b,S3b are the same as one another.
Next, the structure of the semiconductor substrate SB will be described.
As shown in
A contact hole (through-hole) is formed in the interlayer dielectric film IL, and a conductive plug (contact plug) PG including a tungsten (W) film as a main component is formed (buried) in the contact hole. A plurality of plugs PG are formed, and each of the plurality of plugs PG penetrates through the interlayer dielectric film IL. The plug PG is formed on each of the n-type semiconductor regions D1b,S1b,D2b,S2b,D3b,S3b and the gate electrodes G1,G2,G3. Each of the n-type semiconductor regions D1b,S1b,D2b,S2b,D3b,S3b and the gate electrodes G1,G2,G3 is electrically connected to the plug PG disposed thereon.
When a metal silicide layer (not shown) is formed on each upper portion (surface layer portion) of the n-type semiconductor regions D1b,S1b,D2b,S2b,D3b,S3b and the gate electrodes G1,G2,G3, each plug PG is in contact with the metal silicide layer, and is electrically connected to each region under the metal silicide layer via the metal silicide layer.
Wirings (first layer wirings) M1 made of a conductive film mainly formed of aluminum (Al), aluminum alloy, or the like are formed on the interlayer dielectric film IL in which the plug PG is buried. The wiring M1 is not limited to aluminum wiring, but may also be wiring using other metal materials, such as tungsten wiring or copper wiring. Each of the plugs PG is electrically connected to the wiring M1.
A structure above the interlayer dielectric film IL and the wirings M1 are not shown and described here. In practice, an upper wiring and a dielectric film are formed.
The gate electrode G2 of the MISFET 2 is electrically connected to the gate electrode G3 of the MISFET 3. In
Next, the manufacturing method of the semiconductor device according to the present embodiment will be described with reference to the drawings.
As shown in
Next, as shown in
Next, as shown in
That is, after a dielectric film for the gate dielectric films is formed on the main surface of the semiconductor substrate SB, a conductive film (for example, a polysilicon film) for forming the gate electrodes G1,G2,G3 is formed thereon, and then the conductive film is patterned using a photolithography method and a dry etching method to form the gate electrodes G1,G2,G3. The dielectric film (the dielectric film for gate dielectric film) remaining under each of the gate electrodes G1,G2,G3 becomes the gate dielectric films GF1,GF2,GF3. Therefore, the thicknesses of the gate dielectric films GF1,GF2,GF3 are the same as one another, and the thicknesses of the gate electrodes G1,G2,G3 are the same as one another.
Next, as shown in
In this ion implantation, the gate electrodes G1,G2,G3 can function as masks (ion implantation blocking mask). Therefore, the n-type semiconductor regions D1a,S1a are formed on both sides of the gate electrode G1 and in the semiconductor substrate SB (p-type well PW1) in the MISFET forming region 1A. The n-type semiconductor regions D2a,S2a are formed on both sides of the gate electrode G2 and in the semiconductor substrate SB (p-type well PW2) in the MISFET forming region 2A. The n-type semiconductor regions D3a,S3a are formed on both sides of the gate electrode G3 and in the semiconductor substrate SB (p-type well PW2) in the MISFET forming region 3A. Impurities are not implanted in a region immediately below the gate electrodes G1,G2,G3 in the semiconductor substrate SB. The n-type semiconductor regions D1a,S1a, the n-type semiconductor regions D2a,S2a, and the n-type semiconductor regions D3a,S3a can be formed by the same ion implantation step, and in such case, their impurity concentrations (n-type impurity concentrations) are the same as one another.
Further, after the gate electrodes G1,G2,G3 are formed, a photoresist pattern (not shown) is formed on the semiconductor substrate SB by a photolithography technique, and ion implantation for forming the n-type semiconductor regions D1a,S1a,D2a,S2a,D3a,S3a can be performed while the photoresist pattern is formed. In such case, the MISFET forming regions 1A,2A,3A may not be covered with the photoresist pattern. The photoresist pattern is removed after the n-type semiconductor regions D1a,S1a,D2a,S2a,D3a,S3a are formed.
Next, as shown in
Next, as shown in
In this ion implantation, the gate electrode G1 can function as a mask (ion implantation blocking mask), and since the oblique ion implantation is performed, the p-type halo region HA1 is formed so as to surround (cover) the n-type semiconductor region D1a, and the p-type halo region HA2 is formed so as to surround (cover) the n-type semiconductor region S1a. A portion of each of the p-type halo regions HA1,HA2 is located immediately below the gate electrode G1 (that is, overlaps with the gate electrode G1 in plan view). The p-type halo region HA1 and the p-type halo region HA2 are spaced apart from each other in the Y-direction. The p-type halo regions HA1,HA2 have the same conductivity type as the p-type well PW, but have p-type impurity concentrations higher than the impurity concentration of the p-type well PW.
In the ion implantation for forming the p-type halo regions HA1,HA2, the photoresist pattern PR1 can also function as a mask (ion implantation blocking mask), and therefore the p-type impurities are not implanted into the semiconductor substrate SB (p-type well PW2) in the MISFET forming regions 2A,3A. After forming the gate electrodes G1,G2,G3 and prior to forming the sidewall spacers SW, impurities of the same conductivity type as the p-type well PW2 (p-type impurities) are not ion-implanted into the semiconductor substrate SB (p-type well PW2) in the MISFET forming regions 2A,3A. Therefore, the p-type halo regions (corresponding to the p-type halo regions HA1,HA2) are not formed in the semiconductor substrate SB (p-type well PW2) in the MISFET forming region 2A,3A.
After the p-type halo regions HA1,HA2 are formed, the photoresist pattern PR1 is removed by ashing or the like.
Next, as shown in
Next, as shown in
In this ion implantation, the gate electrodes G1,G2,G3 and the sidewall spacers SW can function as masks (ion implantation blocking mask). Therefore, the n-type semiconductor regions D1b,S1b are formed on both sides of the structure including the gate electrode G1 and the sidewall spacers SW and in the semiconductor substrate SB (p-type well PW1) in the MISFET forming region 1A. In addition, the n-type semiconductor regions D2b,S2b are formed on both sides of the structure including the gate electrode G2 and the sidewall spacers SW and in the semiconductor substrate SB (p-type well PW2) in the MISFET forming region 2A. In addition, the n-type semiconductor regions D3b,S3b are formed on both sides of the structure including the gate electrode G3 and the sidewall spacers SW and in the semiconductor substrate SB (p-type well PW2) in MISFET forming region 3A. No impurities are implanted in the regions immediately below the gate electrode G1,G2,G3 and immediately below the sidewall spacers SW in the semiconductor substrate.
The n-type impurity concentrations of the n-type semiconductor regions D1b,S1b are higher than the n-type impurity concentrations of the n-type semiconductor regions D1a,S1a, the n-type impurity concentrations of the n-type semiconductor regions D2b,S2b are higher than the n-type impurity concentrations of the n-type semiconductor regions D2a,S2a, and the n-type impurity concentrations of the n-type semiconductor regions D3b,S3b are higher than the n-type impurity concentrations of the n-type semiconductor regions D3a,S3a. The n-type semiconductor regions D1b,S1b, the n-type semiconductor regions D2b,S2b, and the n-type semiconductor regions D3b,S3b can be formed by the same ion implantation step, and in such case, their impurity concentrations (n-type impurity concentrations) are the same as one another.
Next, if necessary, activation annealing is performed, which is a heat treatment for activating impurities implanted by ion implantation so far.
The MISFETs 1,2,3 are formed as described above.
Next, a metal silicide layer (not shown) is formed on each of the upper portions (upper layer portions) of the n-type semiconductor regions D1b,S1b,D2b,S2b,D3b,S3b and the gate electrodes G1,G2,G3 by using a Salicide (Self Aligned Silicide) technique as needed.
Next, as shown in
Next, contact holes are formed in the interlayer dielectric film IL, and then the plugs PG are formed in the contact holes.
Next, the wirings M1 are formed on the interlayer dielectric film IL. Thereafter, upper interlayer dielectric films and wirings are further formed in upper layer, but the illustration and explanation thereof are omitted here.
The semiconductor device according to the present embodiment is manufactured as described above.
Next, the first modified example of the manufacturing step of the semiconductor device of the present embodiment will be described with reference to
After the gate electrodes G1,G2,G3 and the resistive element PS are formed, as shown in
Next, as shown in
Next, as shown in
Note that either of the vertical ion implantation for forming the n-type semiconductor regions D1a,S1a and the oblique ion implantation for forming the p-type halo regions HA1,HA2 may be performed first.
Next, after the photoresist pattern PR2 is removed by ashing or the like, as shown in
Next, as shown in
Next, as shown in
In the manufacturing step of the first modified example, the ion implantation for forming the n-type semiconductor regions D2a,S2a,D3a,S3a of the MISFETs 2,3 having no halo region and the ion implantation for implanting impurities into the resistive element PS are performed by common ion implantation. In the manufacturing step of the first modified example, the photoresist pattern PR2 for preventing the ion implantation into the semiconductor substrate SB in the MISFET forming regions 2A,3A and the photoresist pattern PR2 for preventing the ion implantation into the resistive element PS are common in the ion implantation step for forming the p-type halo regions HA1,HA2 in the MISFET forming region 1A. Therefore, in the manufacturing step of the first modified example, even if the MISFETs 2,3 having no halo regions are not formed, the number of necessary ion implantation steps does not change, and the number of times the photoresist pattern is formed does not change. That is, when the semiconductor device having the MISFET 1 having the halo region and the resistive element PS is manufactured, if the manufacturing step of the first modified example is applied, the MISFETs 2,3 having no halo regions can be formed together without increasing the number of manufacturing steps. Therefore, in the manufacturing step of the first modified example, the semiconductor device having the MISFET 1 having the halo region, the MISFETs 2,3 having no halo regions, and the resistive element PS can be manufactured while suppressing increase in the number of manufacturing steps (thus, while suppressing increase in the manufacturing cost of the semiconductor device).
Next, a second modified example of the manufacturing step of the semiconductor device according to the present embodiment will be described with reference to
The gate electrode G4 of the high withstand voltage MISFET 4 can be formed in the same step as the gate electrodes G1,G2,G3. Specifically, a dielectric film for the gate dielectric films GF1,GF2,GF3 is formed on the semiconductor substrate SB in the MISFET forming regions 1A,2A,3A and a dielectric film (a dielectric film thicker than the dielectric film for the gate dielectric films GF1,GF2,GF3) for the gate dielectric film GF4 is formed on the semiconductor substrate SB in the high withstand voltage MISFET forming region 4A, and then a conductive film (for example, a polysilicon film) for forming the gate electrodes G1,G2,G3,G4 is formed. Thereafter, the conductive film is patterned using the photolithography method and the dry etching method, whereby the gate electrodes G1,G2,G3,G4 can be formed. Thus, the thickness of the gate dielectric films GF1,GF2,GF3 is the same as one another, but the gate dielectric film GF4 becomes thicker than each of the gate dielectric films GF1,GF2,GF3 of the MISFETs 1,2,3. The thicknesses of the gate electrodes G1,G2,G3,G4 are the same as one another.
Next, as shown in
Next, as shown in
Next, as shown in
Note that either of the vertical ion implantation for forming the n-type semiconductor regions D1a,S1a and the oblique ion implantation for forming the p-type halo regions HA1,HA2 may be performed first.
Next, the photoresist pattern PR4 is removed by ashing or the like, and then a photoresist pattern (resist pattern) PR5 is formed on the semiconductor substrate SB using the photolithography technique as shown in
Next, as shown in
Next, as shown in
Next, as shown in
Next, if necessary, activation annealing is performed, which is a heat treatment for activating impurities implanted by ion implantation so far. Subsequent steps are substantially the same as those described with reference to
In the manufacturing step of the second modified example, ion implantation for forming the n-type semiconductor regions D2a,S2a,D3a,S3a of the MISFETs 2,3 having no halo regions and ion implantation for forming the n-type semiconductor regions D4a,S4a of the high withstand voltage MISFET 4 are performed by common ion implantation. In the manufacturing step of the second modified example, the photoresist pattern PR4 for preventing the ion implantation into the semiconductor substrate SB in the MISFET forming region 2A,3A and the photoresist pattern PR4 for preventing the ion implantation into the semiconductor substrate SB in the high withstand voltage MISFET forming region 4A are common in the ion implantation step for forming the p-type halo regions HA1,HA2 in the MISFET forming region 1A. Therefore, in the manufacturing step of the second modified example, even if the MISFETs 2,3 having no halo regions are not formed, the number of necessary ion implantation steps does not change, and the number of times the photoresist pattern is formed does not change. That is, when the semiconductor device having the MISFET 1 having the halo region and the high withstand voltage MISFET 4 is manufactured, if the manufacturing step of the second modified example is applied, the MISFETs 2,3 having no halo regions can be formed together without increasing the number of manufacturing steps. Therefore, in the manufacturing step of the second modified example, the semiconductor device having the MISFET 1 having the halo region, the MISFETs 2,3 having no halo regions, and the high withstand voltage MISFET 4 can be manufactured while suppressing increase in the number of manufacturing steps (thus, while suppressing increase in the manufacturing cost of the semiconductor device).
The present inventors have considered a semiconductor device incorporating an oscillation circuit, and in particular, have considered a microcontroller incorporating the oscillation circuit.
In order to improve the performance of the semiconductor device (in particular, a microcontroller) incorporating the oscillation circuit, increasing the accuracy of the oscillation frequency of the oscillation circuit is necessary. In order to increase the accuracy of the oscillation frequency of the oscillation circuit, increasing the relative accuracy of the pair transistor included in the oscillation circuit is effective.
The pair transistor includes a pair of MISFETs in which the gate electrodes are electrically connected to each other and are formed adjacent to each other on the semiconductor substrate (corresponding to semiconductor substrate SB) configuring the semiconductor device. Since the MISFET 2 and the MISFET 3 shown in
In the pair transistor included in the oscillation circuit, it is required that the electric characteristics (voltage-current characteristics, typically threshold voltages) of the MISFETs configuring the pair transistor match as much as possible. If the electric characteristics (voltage-current characteristics) of the MISFETs configuring the pair transistor included in the oscillation circuit are different from each other, the oscillation frequency of the oscillation circuit may fluctuate. In order to match the oscillation frequency of the oscillation circuit with the designed value, it is effective to match the electric characteristics (voltage-current characteristics) as much as possible between the MISFETs configuring the pair transistor included in the oscillation circuit. That is, it is effective to reduce the difference of the electric characteristics (voltage-current characteristics) between the MISFETs configuring the pair transistor included in the oscillation circuit and to prevent the difference from fluctuating.
Here, the difference (degree of difference) between the electric characteristics (voltage-current characteristics, typically threshold voltages) of the MISFETs configuring the pair transistor is referred to as the relative accuracy of the pair transistor. For this reason, the higher relative accuracy of the pair transistor means a smaller difference of the electric characteristics between the MISFETs configuring the pair transistor. In addition, when the lower relative accuracy of the pair transistor means the large difference of the electric characteristics between the MISFETs configuring the pair transistor. In addition, the relative accuracy of the pair transistor varies means that the difference amounts of the electric characteristics between the MISFET configuring the pair transistor vary for each pair transistor. In addition, the large variation in the relative accuracy of the pair transistor means that the variation in the electric characteristics between the MISFETs configuring the pair transistor varies for each pair transistor, and means that the degree of the variation is large. In addition, suppressing variation in the relative accuracy of the pair transistor means suppressing variation in the electric characteristics of the MISFETs configuring the pair transistor for each pair transistor.
In a semiconductor device (in particular, a microcontroller) incorporating the oscillation circuit, it is necessary to increase the relative accuracy of the pair transistor included in the oscillation circuit and to suppress the variation in the relative accuracy of the pair transistor included in the oscillation circuit, so that it is possible to improve the performance of the semiconductor device (in particular, a microcontroller) incorporating the oscillation circuit by increasing the accuracy of the oscillation frequency of the oscillation circuit.
Meanwhile, the source/drain regions of the MISFET have an LDD structure and include a low concentration region and a high concentration region, and if the halo region (corresponding to the p-type halo region HA1,HA2) having a conductivity type opposite to the low concentration region and being adjacent to the low concentration region is formed, the short-channel effect can be suppressed. For this reason, the MISFET having the halo region is generally applied to the MISFET that configures various types of circuit included in a microcontroller.
However, according to consideration conducted by the present inventors, it has been found out that when the MISFET having the halo region is applied to the MISFET configuring the pair transistor, variations in the relative accuracy of the pair transistor become large. The reason is as follows. That is, when the MISFET having the halo region and the MISFET having no halo region are compared, the MISFET having the halo region has an impurity concentration in the channel forming region higher than the MISFET having no halo region. Further, an unintended variation of the ion implantation conditions or the like may fluctuate the impurity concentration of the channel forming region of the MISFET, and the degree of the variation of the impurity concentration of the channel forming region of the MISFET increases as the impurity concentration of the channel forming region of the MISFET increases. Therefore, compared with the MISFET having no halo region, in the MISFET having the halo region, an unintended variation in the ion implantation conditions and the like is more likely to fluctuate the impurity concentration in the channel forming region of the MISFET, and consequently, the electric characteristics (voltage-current characteristics, typically threshold voltages) of the MISFET are more likely to be varied. As a consequence, when the MISFET having the halo region is applied to the MISFET configuring the pair transistor, the variation in the relative accuracy of the pair transistor increases.
Therefore, it has been found out that, in the semiconductor device (particularly a microcontroller) incorporating the oscillation circuit, when the MISFET having the halo region is applied to the pair transistor included in the oscillation circuit, the variation in the relative accuracy of the pair transistor increases, the accuracy of the oscillation frequency of the oscillation circuit decreases, and the performance of the semiconductor device (particularly a microcontroller) incorporating the oscillation circuit may deteriorate.
Therefore, in order to suppress variation in the relative accuracy of the pair transistor to which the MISFET having the halo region is applied, it is conceivable to increase the planar dimension of the MISFET having the halo region. Increasing the planar dimension (the area of channels) of the MISFET configuring the pair transistor can suppress variations in the relative accuracy of the pair transistor. However, increasing the planar dimension (the area of channels) of the MISFET configuring the pair transistor increases the area of the semiconductor device, which is not a good idea.
As shown in
The MISFET 1 has the halo regions (corresponding to the p-type halo regions HA1,HA2) as described above, and the MISFETs 2,3 have no halo region as described above.
One of the main features of the present embodiment is that the pair transistor included in the oscillation circuit 12 included in the semiconductor device 11 uses the MISFETs 2,3 having no halo regions instead of the MISFET 1 having the halo region.
As described in the “BACKGROUND OF CONSIDERATION”, unlike the present embodiment, when the MISFET having the halo region is used for the pair transistor included in the oscillation circuit 12, the variation in the relative accuracy of the pair transistor increases, the accuracy of the oscillation frequency of the oscillation circuit decreases, and the performance of the semiconductor device (particularly, the microcontroller) including the oscillation circuit may deteriorate.
On the other hand, in the present embodiment, since the pair transistor included in the oscillation circuit 12 uses the MISFETs 2,3 having no halo regions, rather than the MISFET having the halo region, variation in the relative accuracy of the pair transistor included in the oscillation circuit 12 can be suppressed. The reason is as follows.
That is, when the MISFET having the halo region and the MISFET having no halo region are compared, the MISFET having no halo region is less doped in the channel forming region than in the MISFET having the halo region. Therefore, even if an unintended variation of the ion implantation conditions occurs, the impurity concentration in the channel forming region of the MISFET is less likely to vary in the MISFET having no halo region than in the MISFET having the halo region, and consequently, the electric characteristics (voltage-current characteristics, typically threshold voltages) of the MISFET having no halo region are less likely to vary. As a consequence, when the MISFETs 2,3 having no halo regions are used for the pair transistor included in the oscillation circuit 12, variations in the relative accuracy of the pair transistor included in the oscillation circuit 12 can be suppressed. As a result, the accuracy of the oscillation circuit included in the semiconductor device can be improved, and the performance of the semiconductor device including the oscillation circuit can be improved.
In addition, variation in the relative accuracy of the pair transistor can be suppressed without increasing the planar dimension (channel area) of the MISFET configuring the pair transistor by using the MISFETs 2,3 having no halo region instead of the MISFET having the halo region in the pair transistor in the oscillation circuit 12. Therefore, it is advantageous to reduce the size (area reduction) of the semiconductor device.
Among the various circuits included in the semiconductor device 11, the pair transistor included in the oscillation circuit 12 are required to suppress variations in electric characteristics (voltage-current characteristics, typically threshold voltages) as much as possible. For this reason, the MISFETs 2,3 having no halo regions are used for the pair transistor included in the oscillation circuit 12.
On the other hand, if the MISFET has the halo region, short-channel effect can be suppressed. For this reason, it is preferable to use the MISFET 1 having the halo region in applications where some variation in the electric characteristics is acceptable. For this reason, among the various circuits included in the semiconductor device 11, in the CPU 13, therefore in the logic circuit included in the semiconductor device 11, it is preferable to use the MISFET 1 having the halo region instead of the MISFET 2 or the MISFET 3 having no halo regions. In addition, among the various circuits included in the semiconductor device 11, in the flash memory 14, the SPAM 15, and the register 16, therefore in the storage circuit included in the semiconductor device 11, the MISFET 1 having the halo region is preferably used instead of the MISFET 2 or the MISFET 3 having no halo regions. The flash memory 14 includes a transistor having a storage unit (charge storage unit). Further, in the oscillation circuit 12 included in the semiconductor device 11, it is preferable to use the MISFET 1 having the halo region instead of the MISFET 2 or the MISFET 3 having no halo regions for the MISFET other than the pair transistor. For the peripheral circuit 17 other than the oscillation circuit included in the semiconductor device 11, it is preferable to use the MISFET 1 having the halo region instead of the MISFET 2 or the MISFET 3 having no halo region.
As described above, in the various circuits included in the semiconductor device 11, for applications in which it is required to suppress the variation of the electric characteristics of the MISFET as much as possible, the MISFETs 2,3 having no halo regions are used, and for applications in which some variation of the electric characteristics of the MISFET can be tolerated, the MISFET 1 having the halo region is used. Thus, the performance of the semiconductor device 11 can be improved.
In addition, the semiconductor device 11 has a plurality of MISFETs, and it is preferable that the MISFET having the shortest gate length among the plurality of MISFETs included in the semiconductor device 11 has the halo region as in the MISFET 1. Accordingly, in the MISFET where the influence of the short channel effect is most likely to occur (MISFET of which the gate length is shortest), the short channel effect can be suppressed by forming the halo regions.
As described above, the gate dielectric film GF1 of the MISFET 1, the gate dielectric film GF2 of the MISFET 2 and the gate dielectric film GF3 of the MISFET 3 have the same thickness as one another. On the other hand, the high withstand voltage MISFET 4 (see
Also, the gate dielectric film of each of the MISFETs 1,2,3 is thinner than the gate dielectric film GF4 of the high withstand voltage MISFET 4 and the withstand voltage of each of the MISFETs 1,2,3 is lower than the withstand voltage of the MISFET 4. Therefore, the MISFETs 1,2,3 can be regarded as the low withstand voltage MISFET. In this respect, the technical idea of the present embodiment can also be expressed as follows.
That is, the pair transistor included in the oscillation circuit 12 included in the semiconductor device 11 does not use the MISFET having the halo region, but uses the low withstand voltage MISFET not having the halo region. On the other hand, in the CPU 13 of the semiconductor device 11, it is preferable to use the low withstand voltage MISFET having the halo region without using the low withstand voltage MISFET having no halo region. In addition, in the flash memory 14, the SPAM 15, and the register 16 included in the semiconductor device 11, therefore in the storage circuit of the semiconductor device 11, it is preferable that the low withstand voltage MISFET having the halo region is used without using the low withstand voltage MISFET having no halo region. The flash memory 14 includes a transistor having a storage unit (charge storage unit). In addition, it is preferable that the peripheral circuit 17 other than the oscillation circuit included in the semiconductor device 11 uses the low withstand voltage MISFET having the halo region without using the low withstand voltage MISFET having no halo region. In the peripheral circuit 17 and the storage circuit other than the oscillation circuit included in the semiconductor device 11, in addition to the low withstand voltage MISFET having the halo region, the high withstand voltage MISFET may be used, and the high withstand voltage MISFET may not have the halo region. Therefore, most preferably, in the semiconductor device 11, the pair transistor included in the oscillation circuit 12 uses the low withstand voltage MISFET having no halo region, and the other transistors do not use the low withstand voltage MISFET having no halo region. The low withstand voltage MISFETs have the same thicknesses of the gate dielectric films as each other, and the gate dielectric film of the high withstand voltage MISFET is thicker than the gate dielectric film of the low withstand voltage MISFET.
In
On the other hand, in
It is more preferable when the direction YG1 of the current flowing in the MISFET 2 and the direction YG2 of the current flowing in the MISFET 3 are the same as each other (in the case of
That is, the n-type semiconductor regions D2a,S2a,D3a,S3a and the n-type semiconductor regions D2b,S2b,D3b,S3b are formed by the vertical ion implantation, and the implantation conditions may be unintentionally varied. In order to facilitate the control of the ion implantation step, it is desirable to allow a slight variation in ion implantation conditions (for example, a slight variation in implantation angle). When the direction YG1 of the current flowing in the MISFET 2 and the direction YG2 of the current flowing in the MISFET 3 are the same as each other (in the case of
This is because when the direction YG1 of the current flowing in the MISFET 2 and the direction YG2 of the current flowing in the MISFET 3 are the same as each other, even if the variation of the ion implantation condition (for example, the variation of the implantation angle) occurs, the implantation state of the impurity becomes substantially the same between the source region of the MISFET 2 and the source region of the MISFET 3, and the implantation state of the impurity becomes substantially the same between the drain region of the MISFET 2 and the drain region of the MISFET 3. Therefore, when the direction YG1 of the current flowing in the MISFET 2 and the direction YG2 of the current flowing in the MISFET 3 are the same as each other (in the case of
In the semiconductor substrate SB, it is more preferable that the active region in which the MISFET 2 is formed (MISFET forming region 2A) and the active region in which the MISFET 3 is formed (MISFET forming region 3A) are interposed with the element isolation region ST. More preferably, in the semiconductor substrate SB, the active region in which the MISFET 2 is formed (MISFET forming region 2A) and the active region in which the MISFET 3 is formed (MISFET forming region 3A) are separated by the element isolation region ST. Thus, in the semiconductor substrate SB, the stress generated in the MISFET forming region 2A and the stress generated in the MISFET forming region 3A are easily aligned. Therefore, the relative accuracy of the pair transistor formed of the MISFET 2 and the MISFET 3 can be further improved.
In the wafer test step, the semiconductor elements formed on the semiconductor wafer is electrically tested by pressing the test probe on the pad of the wiring structure formed on the semiconductor wafer. In this wafer test step, the electrical test may be performed after the semiconductor wafer is heated to a relatively high temperature (for example, 250° C. or higher). In this case, the heating step is, for example, a retention baking step, and is performed for a relatively long time (for example, about 1 to 10 hours). Further, in the assembly step, the semiconductor wafer is cut by dicing to obtain semiconductor chips, and then the semiconductor chips are used to manufacture semiconductor packages. In this assembly step, the semiconductor chips may be heated to a relatively high temperature (for example, 250° C. or higher). The heating step in this case is, for example, a solder reflow step (more specifically, an infrared-type solder reflow step).
According to consideration by the present inventors, when the MISFET configuring the pair transistor has the halo region, if the semiconductor wafer is heated to a temperature of 250° C. or higher in the wafer test step, or if the semiconductor chip is heated to 250° C. or higher in the assembly step, the impurities included in the halo region are diffused and the relative accuracy of the pair transistor is increased.
In contrast, in the present embodiment, the MISFETs 2,3 configuring the pair transistor do not have the halo region. Therefore, even when the semiconductor wafer is heated to a temperature of 250° C. or higher in the wafer test step (the heating step described above) or when the semiconductor chips are heated to 250° C. or higher in the assembly step (the heating step described above), the decrease of the relative accuracy of the pair transistor formed of the MISFETs 2,3 can be suppressed or prevented. Consequently, the performance of the manufactured semiconductor packages can be improved.
As described above, the pair transistor is formed of a pair of MISFETs formed adjacent to each other on the semiconductor substrate SB and electrically connected to each other.
Here, in the plurality of MISFETs connected in parallel, the gate electrodes are electrically connected to each other, the source regions are electrically connected to each other, and the drain regions are electrically connected to each other. The gate electrodes are connected to each other through the plug PG and the gate wiring M1G as shown in
Next, a layout example of the pair transistor will be described.
The layout of
The layout of
Therefore, the gate electrode G2 of the MISFET 2a and the gate electrode G2 of the MISFET 2b extend in the Y-direction so as to cross the MISFET forming region 2A, and are arranged in the X-direction. In the MISFET forming region 2A, the n-type semiconductor region S2 and the n-type semiconductor region D2 are alternately arranged in the X-direction with the gate electrode G2 interposed therebetween. The gate electrodes G2 of the MISFETs 2a,2b are electrically connected to each other via the plug PG and the wiring M1. The source regions of the MISFETs 2a,2b (here, the n-type semiconductor regions S2) are electrically connected to each other via the plug PG and the wiring M1. In addition, the drain regions of the MISFETs 2a,2b (here, the n-type semiconductor region D2) are electrically connected to each other by being shared. In the MISFET forming region 2A, no halo region is formed.
The gate electrodes G3 of the MISFET 3a, the gate electrode G3 of the MISFET 3b and the gate electrode G3 of the MISFET 3c extend in the Y-direction so as to cross the MISFET forming region 3A, respectively, and are arranged in the X-direction. In the MISFET forming region 3A, the n-type semiconductor region S3 and the n-type semiconductor region D3 are alternately arranged in the X-direction with the gate electrode G3 interposed therebetween. The gate electrodes G3 of the MISFETs 3a,3b,3c are electrically connected to each other via the plug PG and the wiring M1. The source regions of the MISFETs 3a,3b,3c (here, the n-type semiconductor regions S2) are electrically connected to each other via the plug PG and the wiring M1. Also, the drain regions of the MISFETs 3a,3b,3c (here, the n-type semiconductor regions D2) are electrically connected to each other via the plug PG and the wiring M1. In the MISFET forming region 3A, no halo region is formed.
In
Note that, in
The layout of
In
In
In the active region (MISFET forming region 3A), the regions adjacent to the element isolation region ST are more likely to fluctuate in the distribution of impurities than in the other regions. Therefore, when the MISFET 3 formed of the plurality of MISFETs connected in parallel is formed, the electric characteristics of the MISFET having the gate electrode G3a and the MISFET having the gate electrode G3b may be fluctuated compared with other MISFET.
Therefore, as shown in
In
In
In
The dummy gate electrodes DG1,DG2 are pseudo gate electrodes and do not function as the gate electrode of the transistor. The dummy gate electrodes DG1,DG2 are not connected to the gate electrode G3 through the conductor, and the gate voltage applied to the gate electrode G3 is not applied to the dummy gate electrodes DG1,DG2. Since the dummy gate electrodes DG1,DG2 are formed in the same step as the gate electrode G3, the dummy gate electrodes DG1,DG2 are formed of the same material (for example, polysilicon) as the gate electrode G3 and has the same thickness as the gate electrode G3. Similar to the gate electrode G3, the dummy gate electrodes DG1,DG2 also extend in the Y-direction so as to cross the MISFET forming region 3A. In the semiconductor substrate SB (p-type well PW2), the n-type semiconductor region S3c is formed between each of the dummy gate electrodes DG1,DG2 and the element isolation region ST. The n-type semiconductor region S3c is formed together when the n-type semiconductor region D3,S3 is formed in the semiconductor substrate SB. The n-type semiconductor region S3c does not function as a source/drain region of the transistor.
Therefore, the dummy gate electrodes DG1,DG2 and the plurality of gate electrodes G3 extending in the Y-direction are arranged in the X-direction, the dummy gate electrodes DG1,DG2 are disposed at both ends of the arrangement in the X-direction, and the plurality of gate electrodes G3 extending in the Y-direction are disposed between the dummy gate electrode DG1 extending in the Y-direction and the dummy gate electrode DG2 extending in the Y-direction. Therefore, the dummy gate electrodes DG1,DG2 are adjacent to the element isolation region ST in the X-direction (that is, closest to the element isolation region ST in the X-direction) instead of the gate electrodes G3. The reason why the dummy electrodes DG1,DG2 are preferable provided is as follows.
That is, as described above, in the active region (MISFET forming region 3A), the regions adjacent to the element isolation region ST are more likely to fluctuate as compared with the regions other than the regions. Therefore, when the MISFET 3 formed of the plurality of MISFETs connected in parallel is formed in the MISFET forming region 3A, the electric characteristics of the MISFET having the gate electrode G3a and the MISFET having the gate electrode G3b among the plurality of MISFETs may fluctuate, compared with other MISFET.
Therefore, as shown in
Accordingly, when the MISFET 3 configuring the pair transistor is configured by the plurality of MISFETs connected in parallel, the fluctuation in the electric characteristics of the MISFET 3 can be suppressed or prevented more accurately. The same technical idea holds for the gate electrode G2 in the MISFET forming region 2A, and when the MISFET 2 configuring the pair transistor is configured by the plurality of MISFETs 2 connected in parallel, the fluctuation in the electric characteristics of the MISFET 2 can be suppressed or prevented more accurately. As a result, variations in the relative accuracy of the pair transistor formed of the MISFETs 2,3 can be suppressed.
The layout of
The structures of
That is, the gate electrode G2 extends in the Y-direction so as to cross the MISFET forming region 2A, but in the cases of
In the cases of
In other words, in the active region (MISFET forming region 2A), the region adjacent to the element isolation region ST is more likely to fluctuate in the distribution of impurities than in the other regions. However, when the conductive portion CP is formed as shown in
Accordingly, the fluctuation in the electric characteristics of the MISFET 2 configuring the pair transistor can be suppressed or prevented more accurately. The same technical idea holds for the gate electrode G3 in the MISFET forming region 3A, and the fluctuation in the electric characteristics of the MISFET 3 can be suppressed or prevented more accurately. As a result, variations in the relative accuracy of the pair transistor formed of the MISFETs 2,3 can be suppressed.
On the other hand, when the conductive portion CP is not formed as shown in
As for the MISFET 1 formed in the MISFET forming region 1A, it is preferable to apply a configuration in which the conductive portion CP is not formed as shown in
The invention made by the present inventor has been described above in detail based on the embodiment, but the present invention is not limited to the embodiment described above, and it is needless to say that various modifications can be made without departing from the gist thereof.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2022-170855 | Oct 2022 | JP | national |
| Number | Date | Country | |
|---|---|---|---|
| 20240136352 A1 | Apr 2024 | US |
