characterised by the concentration or distribution of impurities in the bulk material

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H01L29/36

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/36characterised by the concentration or distribution of impurities in the bulk material

Industries

Patents Grantslast 30 patents

Information Patent Grant
Cadmium selenide-indium arsenide heterojunction bipolar transistor
- Patent number 12,176,428
- Issue date Dec 24, 2024
- The United States of America, Represented by the Secretary of the Navy
- Kevin D. Goodman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode
- Patent number 12,176,441
- Issue date Dec 24, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Katsuhiko Fukasaku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,170,318
- Issue date Dec 17, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electronic device including a transistor and a shield electrode
- Patent number 12,166,090
- Issue date Dec 10, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,166,069
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zheng-Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate
- Patent number 12,166,086
- Issue date Dec 10, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,142,646
- Issue date Nov 12, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power amplifier modules including semiconductor resistor and tantal...
- Patent number 12,143,077
- Issue date Nov 12, 2024
- Skyworks Solutions, Inc.
- Peter J. Zampardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,136,654
- Issue date Nov 5, 2024
- Denso Corporation
- Hiroki Miyake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus and manufacturing method of semiconductor a...
- Patent number 12,119,227
- Issue date Oct 15, 2024
- Fuji Electric Co., Ltd.
- Kosuke Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanism for finFET well doping
- Patent number 12,112,975
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having semiconductor device elements in a semi...
- Patent number 12,107,130
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Ingo Muri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Schottky rectifier with surge-current ruggedness
- Patent number 12,107,173
- Issue date Oct 1, 2024
- Semiconductor Components Industries, LLC
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage FET
- Patent number 12,100,734
- Issue date Sep 24, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conduction enhancement layers for electrical contact regions in pow...
- Patent number 12,094,876
- Issue date Sep 17, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including two-dimensional (2D) channel
- Patent number 12,087,818
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,087,827
- Issue date Sep 10, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,087,862
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with improved ruggedness
- Patent number 12,087,854
- Issue date Sep 10, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 12,084,790
- Issue date Sep 10, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Grant
Eight-transistor static random access memory, layout thereof, and m...
- Patent number 12,082,388
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shau-Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,080,707
- Issue date Sep 3, 2024
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 12,074,217
- Issue date Aug 27, 2024
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,071,708
- Issue date Aug 27, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for FinFET LDD doping
- Patent number 12,068,371
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increasing source/drain dopant concentration to reduced resistance
- Patent number 12,062,710
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain structure and method of forming same
- Patent number 12,062,720
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vanadium-compensated 4H and 6H single crystals of optical grade, an...
- Patent number 12,060,650
- Issue date Aug 13, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES

Patents Applicationslast 30 patents

Information Patent Application
LOW REVERSE LEAKAGE CURRENT POWER SCHOTTKY DIODES HAVING REDUCED CU...
- Publication number 20240429323
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Jae-Hyung Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20240426025
- Publication date Dec 26, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...
- Publication number 20240421227
- Publication date Dec 19, 2024
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE
- Publication number 20240413166
- Publication date Dec 12, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413090
- Publication date Dec 12, 2024
- Sumitomo Electric Industries, Ltd.
- Toru HIYOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AlGaN/GaN POWER HEMT DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240405116
- Publication date Dec 5, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Hongan ZENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME
- Publication number 20240401235
- Publication date Dec 5, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER AND PRODUCTION METHOD THEREFOR
- Publication number 20240395563
- Publication date Nov 28, 2024
- Shin-Etsu Handotai Co., Ltd.
- Atsushi SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240371860
- Publication date Nov 7, 2024
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EIGHT-TRANSISTOR STATIC RANDOM ACCESS MEMORY, LAYOUT THEREOF, AND M...
- Publication number 20240373615
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shau-Wei LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240372012
- Publication date Nov 7, 2024
- Rohm Co., Ltd.
- Masatoshi Aketa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Source/Drain Structure and Method of Forming Same
- Publication number 20240363753
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
- Publication number 20240363766
- Publication date Oct 31, 2024
- HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
- Takasumi OOYANAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE
- Publication number 20240355910
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE MULTILAYERED STRUCTURE AND HIGH ELECTRON MOBILITY...
- Publication number 20240355919
- Publication date Oct 24, 2024
- Sumitomo Chemical Company, Limited
- Taiki YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...
- Publication number 20240352617
- Publication date Oct 24, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya ZWIEBACK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
AUTO-DOPING REDUCTION IN SEMICONDUCTOR STRUCTURE
- Publication number 20240347605
- Publication date Oct 17, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Takashi Shiga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240332415
- Publication date Oct 3, 2024
- Kabushiki Kaisha Toshiba
- Tsutomu KIYOSAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE WITH INSULATING FILM AND ORGANIC INSULATIN...
- Publication number 20240332367
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Katsuhisa NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICO...
- Publication number 20240332364
- Publication date Oct 3, 2024
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240332373
- Publication date Oct 3, 2024
- Fuji Electric Co., Ltd.
- Yoshiharu KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCEPT FOR SILICON CARBIDE POWER DEVICES
- Publication number 20240321868
- Publication date Sep 26, 2024
- II-VI ADVANCED MATERIALS, LLC
- Adolf SCHONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240321969
- Publication date Sep 26, 2024
- Kabushiki Kaisha Toshiba
- Takuma SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240313093
- Publication date Sep 19, 2024
- Kabushiki Kaisha Toshiba
- Hiroki HATADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240313100
- Publication date Sep 19, 2024
- Kabushiki Kaisha Toshiba
- Daimotsu KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVI...
- Publication number 20240304669
- Publication date Sep 12, 2024
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240297201
- Publication date Sep 5, 2024
- SUMCO CORPORATION
- Takeshi Kadono
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240290845
- Publication date Aug 29, 2024
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240290881
- Publication date Aug 29, 2024
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY P...
- Publication number 20240287705
- Publication date Aug 29, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C30 - CRYSTAL GROWTH

characterised by the concentration or distribution of impurities in the bulk material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Cadmium selenide-indium arsenide heterojunction bipolar transistor

Diode

Nitride semiconductor, semiconductor device, and method for manufac...

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Electronic device including a transistor and a shield electrode

Semiconductor device and manufacturing method thereof

Epitaxial substrate

Nitride semiconductor, semiconductor device, and method for manufac...

Power amplifier modules including semiconductor resistor and tantal...

Method for manufacturing semiconductor device

Semiconductor apparatus and manufacturing method of semiconductor a...

Mechanism for finFET well doping

Semiconductor device having semiconductor device elements in a semi...

Silicon carbide substrate

Schottky rectifier with surge-current ruggedness

Low leakage FET

Conduction enhancement layers for electrical contact regions in pow...

Transistor including two-dimensional (2D) channel

Semiconductor device

Semiconductor device

Vertical semiconductor device with improved ruggedness

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Eight-transistor static random access memory, layout thereof, and m...

Semiconductor device

Method and apparatus for use in improving linearity of MOSFETs usin...

Silicon carbide substrate

Method for FinFET LDD doping

Increasing source/drain dopant concentration to reduced resistance

Epitaxial source/drain structure and method of forming same

Vanadium-compensated 4H and 6H single crystals of optical grade, an...

Patents Applicationslast 30 patents

LOW REVERSE LEAKAGE CURRENT POWER SCHOTTKY DIODES HAVING REDUCED CU...

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...

ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

AlGaN/GaN POWER HEMT DEVICE AND METHOD FOR MANUFACTURING THE SAME

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

EPITAXIAL WAFER AND PRODUCTION METHOD THEREFOR

SEMICONDUCTOR DEVICE

EIGHT-TRANSISTOR STATIC RANDOM ACCESS MEMORY, LAYOUT THEREOF, AND M...

SEMICONDUCTOR DEVICE

Epitaxial Source/Drain Structure and Method of Forming Same

SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE

GROUP III NITRIDE MULTILAYERED STRUCTURE AND HIGH ELECTRON MOBILITY...

VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...

AUTO-DOPING REDUCTION IN SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SiC SEMICONDUCTOR DEVICE WITH INSULATING FILM AND ORGANIC INSULATIN...

SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICO...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

CONCEPT FOR SILICON CARBIDE POWER DEVICES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVI...

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY P...