characterised by the concentration or distribution of impurities in the bulk material

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H01L29/36

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/36characterised by the concentration or distribution of impurities in the bulk material

Industries

Patents Grantslast 30 patents

Information Patent Grant
Metal-oxide-semiconductor field-effect transistor having enhanced h...
- Patent number 11,967,625
- Issue date Apr 23, 2024
- SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
- Shuming Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor device with surface insulating film
- Patent number 11,967,627
- Issue date Apr 23, 2024
- ROHM Co, Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide crystal
- Patent number 11,952,676
- Issue date Apr 9, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor with multiple nitride regions of different im...
- Patent number 11,955,520
- Issue date Apr 9, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,935,945
- Issue date Mar 19, 2024
- Fuji Electric Co., Ltd.
- Hiroshi Takishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxial wafer and method of producing semiconductor...
- Patent number 11,935,745
- Issue date Mar 19, 2024
- Sumco Corporation
- Ryosuke Okuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with voltage resistant structure
- Patent number 11,929,394
- Issue date Mar 12, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based strap cell structure for improving memory performance
- Patent number 11,925,011
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,923,422
- Issue date Mar 5, 2024
- GlobalWafers Co., Ltd.
- Ming-Shien Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond semiconductor system and method
- Patent number 11,915,934
- Issue date Feb 27, 2024
- AKHAN SEMICONDUCTOR, INC.
- Adam Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion beam implantation method and semiconductor device
- Patent number 11,908,694
- Issue date Feb 20, 2024
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,901,419
- Issue date Feb 13, 2024
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and...
- Patent number 11,894,468
- Issue date Feb 6, 2024
- Cornell University
- Wenshen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,894,258
- Issue date Feb 6, 2024
- Fuji Electric Co., Ltd.
- Takahiro Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral transistors and methods with low-voltage-drop shunt to body...
- Patent number 11,888,047
- Issue date Jan 30, 2024
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 11,854,782
- Issue date Dec 26, 2023
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FinFET) device stru...
- Patent number 11,855,208
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 11,843,040
- Issue date Dec 12, 2023
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Eight-transistor static random access memory, layout thereof, and m...
- Patent number 11,832,429
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shau-Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increasing source/drain dopant concentration to reduced resistance
- Patent number 11,830,934
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,823,898
- Issue date Nov 21, 2023
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 11,824,095
- Issue date Nov 21, 2023
- Fuji Electric Co., Ltd.
- Takashi Yoshimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,817,318
- Issue date Nov 14, 2023
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,810,913
- Issue date Nov 7, 2023
- Fuji Electric Co., Ltd.
- Yosuke Sakurai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode
- Patent number 11,804,554
- Issue date Oct 31, 2023
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Katsuhiko Fukasaku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 11,792,970
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked III-V semiconductor diode
- Patent number 11,791,423
- Issue date Oct 17, 2023
- 3-5 Power Electronics GmbH
- Jens Kowalsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 11,791,377
- Issue date Oct 17, 2023
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reusable nitride wafer, method of making, and use thereof
- Patent number RE49677
- Issue date Oct 3, 2023
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...
- Publication number 20240136409
- Publication date Apr 25, 2024
- DENSO CORPORATION
- Hideyuki UEHIGASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE WITH VOLTAGE RESISTANT STRUCTURE
- Publication number 20240128315
- Publication date Apr 18, 2024
- ROHM CO., LTD.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE
- Publication number 20240120384
- Publication date Apr 11, 2024
- Rohm Co., Ltd.
- Kenji YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IM...
- Publication number 20240096969
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Toshiki HIKOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MPS DIODE HAVING A DOPED REGION AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240097047
- Publication date Mar 21, 2024
- NEXPERIA B.V.
- Massimo Cataldo Mazzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MPS DIODE HAVING A NON-UNIFORMLY DOPED REGION AND METHOD FOR MANUFA...
- Publication number 20240097046
- Publication date Mar 21, 2024
- NEXPERIA B.V.
- Massimo Cataldo Mazzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD
- Publication number 20240096629
- Publication date Mar 21, 2024
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20240072150
- Publication date Feb 29, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...
- Publication number 20240072124
- Publication date Feb 29, 2024
- Mitsubishi Electric Corporation
- Yusuke MIYATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240063264
- Publication date Feb 22, 2024
- Kabushiki Kaisha Toshiba
- Yoko IWAKAJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240047200
- Publication date Feb 8, 2024
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20240047535
- Publication date Feb 8, 2024
- Fuji Electric Co., Ltd.
- Takashi YOSHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20240038850
- Publication date Feb 1, 2024
- Kabushiki Kaisha Toshiba
- Masatsugu NAGAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240038851
- Publication date Feb 1, 2024
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS, AND MANUFACTURING METHOD THEREOF
- Publication number 20240030322
- Publication date Jan 25, 2024
- Fuji Electric Co., Ltd.
- Hidenori TSUJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
- Publication number 20240011191
- Publication date Jan 11, 2024
- Resonac Corporation
- Kensho TANAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH VOLTAGE RESISTOR WITH HIGH VOLTAGE JUNCTION TERMINATION
- Publication number 20240014260
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE
- Publication number 20240014326
- Publication date Jan 11, 2024
- Sony Semiconductor Solutions Corporation
- Katsuhiko FUKASAKU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240006528
- Publication date Jan 4, 2024
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240006510
- Publication date Jan 4, 2024
- SHINDENGEN ELECTRIC MANUFACTURING CO., LTD
- Kanae ENDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-ß BIPOLAR JUNCTION TRANSISTOR AND MANUFACTURING METHOD THEREFOR
- Publication number 20240006477
- Publication date Jan 4, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yongshun LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230420524
- Publication date Dec 28, 2023
- Mitsubishi Electric Corporation
- Kenji SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE
- Publication number 20230420497
- Publication date Dec 28, 2023
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20230420549
- Publication date Dec 28, 2023
- Fuji Electric Co., Ltd.
- Hong-fei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY RECTIFIER WITH SURGE-CURRENT RUGGEDNESS
- Publication number 20230411536
- Publication date Dec 21, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Andrei KONSTANTINOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EIGHT-TRANSISTOR STATIC RANDOM ACCESS MEMORY, LAYOUT THEREOF, AND M...
- Publication number 20230413503
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shau-Wei LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20230407522
- Publication date Dec 21, 2023
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230387218
- Publication date Nov 30, 2023
- Mitsubishi Electric Corporation
- Taiki HOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230387287
- Publication date Nov 30, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC INCLUDING STANDARD CELLS AND SRAM CELLS
- Publication number 20230389253
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the concentration or distribution of impurities in the bulk material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Metal-oxide-semiconductor field-effect transistor having enhanced h...

Wide band gap semiconductor device with surface insulating film

Silicon carbide crystal

Nitride semiconductor with multiple nitride regions of different im...

Semiconductor device and manufacturing method of semiconductor device

Semiconductor epitaxial wafer and method of producing semiconductor...

Semiconductor device with voltage resistant structure

Fin-based strap cell structure for improving memory performance

Semiconductor device

Diamond semiconductor system and method

Ion beam implantation method and semiconductor device

Semiconductor device and manufacturing method of semiconductor device

High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and...

Semiconductor device and manufacturing method thereof

Lateral transistors and methods with low-voltage-drop shunt to body...

Semiconductor device and fabrication method

Method for forming fin field effect transistor (FinFET) device stru...

MIS contact structure with metal oxide conductor

Power semiconductor device having overvoltage protection and method...

Eight-transistor static random access memory, layout thereof, and m...

Increasing source/drain dopant concentration to reduced resistance

Semiconductor device and method for manufacturing the same

Semiconductor device and semiconductor device manufacturing method

GaN devices with ion implanted ohmic contacts and method of fabrica...

Semiconductor device

Diode

IC including standard cells and SRAM cells

Stacked III-V semiconductor diode

Power device integration on a common substrate

Reusable nitride wafer, method of making, and use thereof

Patents Applicationslast 30 patents

SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...

SEMICONDUCTOR DEVICE WITH VOLTAGE RESISTANT STRUCTURE

SIC SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IM...

MPS DIODE HAVING A DOPED REGION AND METHOD FOR MANUFACTURING THE SAME

MPS DIODE HAVING A NON-UNIFORMLY DOPED REGION AND METHOD FOR MANUFA...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR APPARATUS, AND MANUFACTURING METHOD THEREOF

SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

HIGH VOLTAGE RESISTOR WITH HIGH VOLTAGE JUNCTION TERMINATION

DIODE

SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

THYRISTOR AND METHOD FOR MANUFACTURING THE SAME

SUPER-ß BIPOLAR JUNCTION TRANSISTOR AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE

POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE

INSULATED GATE BIPOLAR TRANSISTOR

SCHOTTKY RECTIFIER WITH SURGE-CURRENT RUGGEDNESS

EIGHT-TRANSISTOR STATIC RANDOM ACCESS MEMORY, LAYOUT THEREOF, AND M...

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

IC INCLUDING STANDARD CELLS AND SRAM CELLS