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H01L21/28587

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28587characterised by the sectional shape

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of producing a semiconductor laser and semiconductor laser
- Patent number 11,935,755
- Issue date Mar 19, 2024
- OSRAM OLED GmbH
- Alfred Lell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,837,642
- Issue date Dec 5, 2023
- Samsung Electronics Co., Ltd.
- Soogine Chong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Miniature field plate T-gate and method of fabricating the same
- Patent number 11,764,271
- Issue date Sep 19, 2023
- HRL Laboratories, LLC
- Joel C. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices with an engineered substrate
- Patent number 11,735,460
- Issue date Aug 22, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,721,729
- Issue date Aug 8, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- King Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-polar III-nitride device structures with a p-type layer
- Patent number 11,699,723
- Issue date Jul 11, 2023
- MONDE WIRELESS INC.
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductors with improved thermal budget and process of making s...
- Patent number 11,658,233
- Issue date May 23, 2023
- Wolfspeed, Inc.
- Kyoung-Keun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistors with source and drain field plates and...
- Patent number 11,575,036
- Issue date Feb 7, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,569,358
- Issue date Jan 31, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- King Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,569,359
- Issue date Jan 31, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- King Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate shape structuring approaches
- Patent number 11,563,098
- Issue date Jan 24, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 11,563,097
- Issue date Jan 24, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Ming-Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,538,921
- Issue date Dec 27, 2022
- Mitsubishi Electric Corporation
- Hidetoshi Koyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,495,671
- Issue date Nov 8, 2022
- Sumitomo Electric Device Innovations, Inc.
- Takuma Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Miniature field plate T-gate and method of fabricating the same
- Patent number 11,302,786
- Issue date Apr 12, 2022
- HRL Laboratories LLC
- Joel C. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structure for field effect transistor
- Patent number 11,239,326
- Issue date Feb 1, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,201,222
- Issue date Dec 14, 2021
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- King Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 11,171,005
- Issue date Nov 9, 2021
- Mitsubishi Electric Corporation
- Kohei Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing vertical semiconductor diodes using an eng...
- Patent number 11,107,720
- Issue date Aug 31, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor and manufacturing method thereof
- Patent number 11,011,380
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ming-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming nitride semiconductor device
- Patent number 10,978,569
- Issue date Apr 13, 2021
- Sumitomo Electric Device Innovations, Inc.
- Takuma Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with interconnect to source/drain
- Patent number 10,923,579
- Issue date Feb 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device including protective layer and ohmic...
- Patent number 10,916,645
- Issue date Feb 9, 2021
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor laser and semiconductor laser
- Patent number 10,910,226
- Issue date Feb 2, 2021
- OSRAM OLED GmbH
- Alfred Lell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming high electron mobility transistor (HEMT) and HEM...
- Patent number 10,896,970
- Issue date Jan 19, 2021
- Sumitomo Electric Device Innovations, Inc.
- Tadashi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for high-electron-mobility transistor
- Patent number 10,811,261
- Issue date Oct 20, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ming-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a dual-gate HEMT
- Patent number 10,734,498
- Issue date Aug 4, 2020
- HRL Laboratories, LLC
- David F. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with interconnect to source/drain
- Patent number 10,707,330
- Issue date Jul 7, 2020
- GLOBALFOUNDRIES Inc.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming high electron mobility transistor (HEMT) and HEM...
- Patent number 10,686,053
- Issue date Jun 16, 2020
- Sumitomo Electric Device Innovations, Inc.
- Tadashi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode GaN transistor with selective and nonselective etc...
- Patent number 10,622,455
- Issue date Apr 14, 2020
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE DEVICE AND METHOD FOR MANUFACTURING HIGH ELECTRON M...
- Publication number 20240038847
- Publication date Feb 1, 2024
- United Microelectronics Corp.
- Chih Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND MANUFACTURING METHOD T...
- Publication number 20230299169
- Publication date Sep 21, 2023
- Powerchip Semiconductor Manufacturing Corporation
- Jih-Wen Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC CONTACTS WITH DIRECT ACCESS PATHWAYS TO TWO-DIMENSIONAL ELECT...
- Publication number 20230016810
- Publication date Jan 19, 2023
- National Research Council of Canada
- Alireza LOGHMANY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220416071
- Publication date Dec 29, 2022
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC CONTACTS WITH DIRECT ACCESS PATHWAYS TO TWO-DIMENSIONAL ELECT...
- Publication number 20220246737
- Publication date Aug 4, 2022
- National Research Council of Canada
- Alireza LOGHMANY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES
- Publication number 20220223429
- Publication date Jul 14, 2022
- The Regents of the University of California
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Miniature Field Plate T-Gate and Method of Fabricating the Same
- Publication number 20220190123
- Publication date Jun 16, 2022
- HRL LABORATORIES, LLC
- Joel C. WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220109056
- Publication date Apr 7, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220069096
- Publication date Mar 3, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- KING YUEN WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220069095
- Publication date Mar 3, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- KING YUEN WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTROL FOR HEMT DEVICES USING DIELECTRIC BETWEEN GATE EDGES A...
- Publication number 20220052163
- Publication date Feb 17, 2022
- Semiconductor Components Industries, LLC
- Peter COPPENS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL-III-NITRIDE ALLOYS FOR ROBUST HIGH PERFORMANCE HEMTS
- Publication number 20210399119
- Publication date Dec 23, 2021
- Intel Corporation
- Suresh VISHWANATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH AN ENGINEERED SUBSTRATE
- Publication number 20210358795
- Publication date Nov 18, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210305418
- Publication date Sep 30, 2021
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20210257475
- Publication date Aug 19, 2021
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- KING YUEN WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20210184010
- Publication date Jun 17, 2021
- Samsung Electronics Co., Ltd.
- Soogine Chong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...
- Publication number 20210167188
- Publication date Jun 3, 2021
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tadashi WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductors with Improved Thermal Budget and Process of Making S...
- Publication number 20210151592
- Publication date May 20, 2021
- Cree, Inc.
- Kyoung-Keun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20210111268
- Publication date Apr 15, 2021
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Takuma NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER
- Publication number 20210111030
- Publication date Apr 15, 2021
- OSRAM OLED GmbH
- Alfred Lell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20200357644
- Publication date Nov 12, 2020
- Mitsubishi Electric Corporation
- Kohei NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIATURE FIELD PLATE T-GATE AND METHOD OF FABRICATING THE SAME
- Publication number 20200321441
- Publication date Oct 8, 2020
- HRL LABORATORIES, LLC
- Joel C. WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...
- Publication number 20200312982
- Publication date Oct 1, 2020
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tadashi WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTERCONNECT TO SOURCE/DRAIN
- Publication number 20200251576
- Publication date Aug 6, 2020
- GLOBALFOUNDRIES INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20200243667
- Publication date Jul 30, 2020
- Mitsubishi Electric Corporation
- Hidetoshi Koyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTORS WITH SOURCE AND DRAIN FIELD PLATES AND...
- Publication number 20200227545
- Publication date Jul 16, 2020
- Intel Corporation
- Han Wui THEN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
GALLIUM NITRIDE TRANSISTORS WITH DRAIN FIELD PLATES AND THEIR METHO...
- Publication number 20200227544
- Publication date Jul 16, 2020
- Intel Corporation
- Han Wui THEN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
METHODS OF MANUFACTURING VERTICAL SEMICONDUCTOR DIODES USING AN ENG...
- Publication number 20200111698
- Publication date Apr 9, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Application
TRANSISTOR GATE SHAPE STRUCTURING APPROACHES
- Publication number 20190393319
- Publication date Dec 26, 2019
- Intel Corporation
- Marko RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190326404
- Publication date Oct 24, 2019
- Fujitsu Limited
- Yusuke Kumazaki
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the sectional shape

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of producing a semiconductor laser and semiconductor laser

Semiconductor device and method of fabricating the same

Miniature field plate T-gate and method of fabricating the same

Integrated circuit devices with an engineered substrate

Semiconductor device and fabrication method thereof

N-polar III-nitride device structures with a p-type layer

Semiconductors with improved thermal budget and process of making s...

Gallium nitride transistors with source and drain field plates and...

Semiconductor device and fabrication method thereof

Semiconductor device and fabrication method thereof

Transistor gate shape structuring approaches

High electron mobility transistor and fabrication method thereof

Method for manufacturing semiconductor device

Nitride semiconductor device

Miniature field plate T-gate and method of fabricating the same

Electrode structure for field effect transistor

Semiconductor device and fabrication method thereof

Semiconductor device manufacturing method

Methods of manufacturing vertical semiconductor diodes using an eng...

High-electron-mobility transistor and manufacturing method thereof

Process of forming nitride semiconductor device

Semiconductor device with interconnect to source/drain

Compound semiconductor device including protective layer and ohmic...

Method of producing a semiconductor laser and semiconductor laser

Process of forming high electron mobility transistor (HEMT) and HEM...

Manufacturing method for high-electron-mobility transistor

Method of making a dual-gate HEMT

Semiconductor device with interconnect to source/drain

Process of forming high electron mobility transistor (HEMT) and HEM...

Enhancement-mode GaN transistor with selective and nonselective etc...

Patents Applicationslast 30 patents

GALLIUM NITRIDE DEVICE AND METHOD FOR MANUFACTURING HIGH ELECTRON M...

HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND MANUFACTURING METHOD T...

OHMIC CONTACTS WITH DIRECT ACCESS PATHWAYS TO TWO-DIMENSIONAL ELECT...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

OHMIC CONTACTS WITH DIRECT ACCESS PATHWAYS TO TWO-DIMENSIONAL ELECT...

N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES

Miniature Field Plate T-Gate and Method of Fabricating the Same

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

GATE CONTROL FOR HEMT DEVICES USING DIELECTRIC BETWEEN GATE EDGES A...

TRANSITION METAL-III-NITRIDE ALLOYS FOR ROBUST HIGH PERFORMANCE HEMTS

INTEGRATED CIRCUIT DEVICES WITH AN ENGINEERED SUBSTRATE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...

Semiconductors with Improved Thermal Budget and Process of Making S...

NITRIDE SEMICONDUCTOR DEVICE

METHOD OF PRODUCING A SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

MINIATURE FIELD PLATE T-GATE AND METHOD OF FABRICATING THE SAME

PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...

SEMICONDUCTOR DEVICE WITH INTERCONNECT TO SOURCE/DRAIN

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

GALLIUM NITRIDE TRANSISTORS WITH SOURCE AND DRAIN FIELD PLATES AND...

GALLIUM NITRIDE TRANSISTORS WITH DRAIN FIELD PLATES AND THEIR METHO...

METHODS OF MANUFACTURING VERTICAL SEMICONDUCTOR DIODES USING AN ENG...

TRANSISTOR GATE SHAPE STRUCTURING APPROACHES

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME