Combinations of two or more different dielectric layers having a low dielectric constant

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H01L21/76835

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76835Combinations of two or more different dielectric layers having a low dielectric constant

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Methods for reducing dual damascene distortion
- Patent number 12,148,696
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization lines on integrated circuit products
- Patent number 12,131,994
- Issue date Oct 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having bit line with stepped profile
- Patent number 12,022,649
- Issue date Jun 25, 2024
- NANYA TECHNOLOGY CORPORATION
- Tzu-Ching Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric layer, interconnection structure using the same, and man...
- Patent number 12,014,919
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with staggered selective growth
- Patent number 12,009,253
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch damage and ESL free dual damascene metal interconnect
- Patent number 11,955,376
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sunil Kumar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene process using cap layer
- Patent number 11,929,329
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,843,029
- Issue date Dec 12, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Youquan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,804,403
- Issue date Oct 31, 2023
- United Semiconductor (Xiamen) Co., Ltd.
- Ji He Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization lines on integrated circuit products
- Patent number 11,791,263
- Issue date Oct 17, 2023
- GLOBALFOUNDRIES U.S. INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip with stacked conductor lines and air gaps
- Patent number 11,742,289
- Issue date Aug 29, 2023
- Advanced Micro Devices, Inc.
- Richard Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split ash processes for via formation to suppress damage to low-K l...
- Patent number 11,721,578
- Issue date Aug 8, 2023
- Tokyo Electron Limited
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable dielectric constant materials in same layer of a package
- Patent number 11,715,688
- Issue date Aug 1, 2023
- QUALCOMM Incorporated
- Aniket Patil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure for semiconductor device and methods of fabr...
- Patent number 11,610,841
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for reducing dual damascene distortion
- Patent number 11,482,493
- Issue date Oct 25, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chao-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal interconnect structure and method for fabricating the same
- Patent number 11,450,558
- Issue date Sep 20, 2022
- United Microelectronics Corp.
- Yi-How Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure and method
- Patent number 11,328,952
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Cheng Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping layer for improved deposition selectivity
- Patent number 11,264,328
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fence structure to prevent stiction in a MEMS motion sensor
- Patent number 11,261,083
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Lee-Chuan Tseng
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method and structure for forming fully-aligned via
- Patent number 11,244,861
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization lines on integrated circuit products
- Patent number 11,233,006
- Issue date Jan 25, 2022
- GLOBALFOUNDRIES U.S. INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch damage and ESL free dual damascene metal interconnect
- Patent number 11,171,041
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sunil Kumar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallic interconnect structure
- Patent number 11,164,776
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Son Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip with stacked conductor lines and air gaps
- Patent number 11,004,791
- Issue date May 11, 2021
- Advanced Micro Devices, Inc.
- Richard Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure and method of forming the same
- Patent number 10,985,054
- Issue date Apr 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeng-Shiou Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric layer, interconnection structure using the same, and man...
- Patent number 10,950,426
- Issue date Mar 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure and method of forming the same
- Patent number 10,923,392
- Issue date Feb 16, 2021
- Tokyo Electron Limited
- Soo Doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified dielectric fill between the contacts of field-effect trans...
- Patent number 10,916,470
- Issue date Feb 9, 2021
- GLOBALFOUNDRIES Inc.
- Vimal K. Kamineni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned via forming to conductive line and related wiring stru...
- Patent number 10,879,112
- Issue date Dec 29, 2020
- GLOBALFOUNDRIES Inc.
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure and method
- Patent number 10,840,134
- Issue date Nov 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Cheng Chou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METALLIZATION LINES ON INTEGRATED CIRCUIT PRODUCTS
- Publication number 20240413082
- Publication date Dec 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240387255
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH POROUS LAYER AND METHOD FOR FABRICATING T...
- Publication number 20240387166
- Publication date Nov 21, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH POROUS LAYER AND METHOD FOR FABRICATING T...
- Publication number 20240387165
- Publication date Nov 21, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure with Staggered Selective Growth
- Publication number 20240332073
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC LAYER, INTERCONNECTION STRUCTURE USING THE SAME, AND MAN...
- Publication number 20240297038
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Chen HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240213161
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Cheng Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-FORMING, SELF-ALIGNED BARRIERS FOR BACK-END INTERCONNECTS AND...
- Publication number 20240203786
- Publication date Jun 20, 2024
- Tahoe Research, Ltd.
- Hui Jae YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BACKSIDE DIELECTRIC FOR CLOCK AND POWER WIRES
- Publication number 20240079325
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING BIT LINE WITH STEPPED PROFILE
- Publication number 20230345707
- Publication date Oct 26, 2023
- NANYA TECHNOLOGY CORPORATION
- TZU-CHING TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230268225
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COPPER INTERCONNECTS WITH AN EMBEDDED DIELECTRIC CAP BETWEEN LINES
- Publication number 20230120199
- Publication date Apr 20, 2023
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20220399226
- Publication date Dec 15, 2022
- United Semiconductor (Xiamen) Co., Ltd.
- Ji He Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220384254
- Publication date Dec 1, 2022
- UNITED MICROELECTRONICS CORP.
- Yi-How Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Reducing Dual Damascene Distortion
- Publication number 20220367355
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co, LTD.
- Chao-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20220102489
- Publication date Mar 31, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Youquan YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH DAMAGE AND ESL FREE DUAL DAMASCENE METAL INTERCONNECT
- Publication number 20220059404
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sunil Kumar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20210375779
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Cheng Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FORMING FULLY-ALIGNED VIA
- Publication number 20210327756
- Publication date Oct 21, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP WITH STACKED CONDUCTOR LINES AND AIR GAPS
- Publication number 20210296233
- Publication date Sep 23, 2021
- ADVANCED MICRO DEVICES, INC.
- Richard SCHULTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC LAYER, INTERCONNECTION STRUCTURE USING THE SAME, AND MAN...
- Publication number 20210202241
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Chen HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIC INTERCONNECT STRUCTURE
- Publication number 20210098292
- Publication date Apr 1, 2021
- International Business Machines Corporation
- Son Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure with Staggered Selective Growth
- Publication number 20210090944
- Publication date Mar 25, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure and Method
- Publication number 20210074581
- Publication date Mar 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Cheng Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Reducing Dual Damascene Distortion
- Publication number 20210057340
- Publication date Feb 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200373198
- Publication date Nov 26, 2020
- UNITED MICROELECTRONICS CORP.
- Yi-How Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure and Method of Forming the Same
- Publication number 20200343128
- Publication date Oct 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jeng-Shiou Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP WITH STACKED CONDUCTOR LINES AND AIR GAPS
- Publication number 20200328155
- Publication date Oct 15, 2020
- ADVANCED MICRO DEVICES, INC.
- Richard SCHULTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED DIELECTRIC FILL BETWEEN THE CONTACTS OF FIELD-EFFECT TRANS...
- Publication number 20200279768
- Publication date Sep 3, 2020
- GLOBALFOUNDRIES INC.
- Vimal K. Kamineni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20200227314
- Publication date Jul 16, 2020
- Samsung Electronics Co., Ltd.
- Yeong Gil Kim
- H01 - BASIC ELECTRIC ELEMENTS

Combinations of two or more different dielectric layers having a low dielectric constant

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods for reducing dual damascene distortion

Metallization lines on integrated circuit products

Memory device having bit line with stepped profile

Dielectric layer, interconnection structure using the same, and man...

Semiconductor structure with staggered selective growth

Etch damage and ESL free dual damascene metal interconnect

Damascene process using cap layer

Semiconductor structure and manufacturing method thereof

Semiconductor structure and method for forming the same

Metallization lines on integrated circuit products

Semiconductor chip with stacked conductor lines and air gaps

Split ash processes for via formation to suppress damage to low-K l...

Variable dielectric constant materials in same layer of a package

Interconnect structure for semiconductor device and methods of fabr...

Methods for reducing dual damascene distortion

Metal interconnect structure and method for fabricating the same

Interconnect structure and method

Capping layer for improved deposition selectivity

Fence structure to prevent stiction in a MEMS motion sensor

Method and structure for forming fully-aligned via

Metallization lines on integrated circuit products

Etch damage and ESL free dual damascene metal interconnect

Metallic interconnect structure

Semiconductor chip with stacked conductor lines and air gaps

Interconnect structure and method of forming the same

Dielectric layer, interconnection structure using the same, and man...

Interconnect structure and method of forming the same

Modified dielectric fill between the contacts of field-effect trans...

Self-aligned via forming to conductive line and related wiring stru...

Interconnect structure and method

Patents Applicationslast 30 patents

METALLIZATION LINES ON INTEGRATED CIRCUIT PRODUCTS

DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE WITH POROUS LAYER AND METHOD FOR FABRICATING T...

SEMICONDUCTOR DEVICE WITH POROUS LAYER AND METHOD FOR FABRICATING T...

Semiconductor Structure with Staggered Selective Growth

DIELECTRIC LAYER, INTERCONNECTION STRUCTURE USING THE SAME, AND MAN...

SEMICONDUCTOR DEVICE

SELF-FORMING, SELF-ALIGNED BARRIERS FOR BACK-END INTERCONNECTS AND...

HYBRID BACKSIDE DIELECTRIC FOR CLOCK AND POWER WIRES

MEMORY DEVICE HAVING BIT LINE WITH STEPPED PROFILE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

COPPER INTERCONNECTS WITH AN EMBEDDED DIELECTRIC CAP BETWEEN LINES

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

METAL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME

Methods for Reducing Dual Damascene Distortion

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

ETCH DAMAGE AND ESL FREE DUAL DAMASCENE METAL INTERCONNECT

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

METHOD AND STRUCTURE FOR FORMING FULLY-ALIGNED VIA

SEMICONDUCTOR CHIP WITH STACKED CONDUCTOR LINES AND AIR GAPS

DIELECTRIC LAYER, INTERCONNECTION STRUCTURE USING THE SAME, AND MAN...

METALLIC INTERCONNECT STRUCTURE

Semiconductor Structure with Staggered Selective Growth

Interconnect Structure and Method

Methods for Reducing Dual Damascene Distortion

METAL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME

Interconnect Structure and Method of Forming the Same

SEMICONDUCTOR CHIP WITH STACKED CONDUCTOR LINES AND AIR GAPS

MODIFIED DIELECTRIC FILL BETWEEN THE CONTACTS OF FIELD-EFFECT TRANS...

METHODS OF FABRICATING SEMICONDUCTOR DEVICES