Compounds of sulfur, selenium or tellurium

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CPC
H01L45/141

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/141Compounds of sulfur, selenium or tellurium

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices comprising threshold switching materials
- Patent number 11,672,191
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional semiconductor memory devices
- Patent number 11,665,914
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Si-Ho Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory structure with efficient heating system
- Patent number 11,659,780
- Issue date May 23, 2023
- International Business Machines Corporation
- Injo Ok
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite electrode material chemistry
- Patent number 11,659,778
- Issue date May 23, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selector device and method of making the same
- Patent number 11,659,781
- Issue date May 23, 2023
- Huazhong University of Science & Technology
- Xiangshui Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices
- Patent number 11,651,995
- Issue date May 16, 2023
- Samsung Electronics Co., Ltd.
- Sangkuk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive interface material
- Patent number 11,641,788
- Issue date May 2, 2023
- Micron Technology, Inc.
- Andrea Gotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-component cell architectures for a memory device
- Patent number 11,637,145
- Issue date Apr 25, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
3D memory array with memory cells having a 3D selector and a storag...
- Patent number 11,631,717
- Issue date Apr 18, 2023
- Intel Corporation
- Charles Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Efficient fabrication of memory structures
- Patent number 11,626,452
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Don Koun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory array
- Patent number 11,587,979
- Issue date Feb 21, 2023
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming memory structures
- Patent number 11,575,085
- Issue date Feb 7, 2023
- Micron Technology, Inc.
- Andrea Gotti
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device
- Patent number 11,545,214
- Issue date Jan 3, 2023
- Samsung Electronics Co., Ltd.
- Masayuki Terai
- G11 - INFORMATION STORAGE
Information Patent Grant
Tapered memory cell profiles
- Patent number 11,545,625
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of electrodes for memory cells
- Patent number 11,545,623
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with multi-layer liner structure
- Patent number 11,538,988
- Issue date Dec 27, 2022
- Intel Corporation
- Santanu Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a memory cell comprising a metal chalcogenide ma...
- Patent number 11,538,991
- Issue date Dec 27, 2022
- Micron Technology, Inc.
- Eugene P. Marsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer in memory cell to prevent metal redeposition
- Patent number 11,532,785
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metasurface phase change communicator
- Patent number 11,522,128
- Issue date Dec 6, 2022
- The Johns Hopkins University
- David B. Shrekenhamer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spike current suppression in a memory array
- Patent number 11,514,985
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Sundaravadivel Rajarajan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor devices including a passive material between memory c...
- Patent number 11,515,358
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned memory decks in cross-point memory arrays
- Patent number 11,489,117
- Issue date Nov 1, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neural network memory
- Patent number 11,487,464
- Issue date Nov 1, 2022
- Micron Technology, Inc.
- Mattia Boniardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Material implication operations in memory
- Patent number 11,475,951
- Issue date Oct 18, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method of manufacturing electronic device
- Patent number 11,450,711
- Issue date Sep 20, 2022
- SK Hynix Inc.
- Bong Hoon Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices comprising metal oxide materials and related met...
- Patent number 11,444,243
- Issue date Sep 13, 2022
- Micron Technology, Inc.
- Santanu Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of selector on confined phase change memory
- Patent number 11,437,571
- Issue date Sep 6, 2022
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage equalization for pillars of a memory array
- Patent number 11,437,097
- Issue date Sep 6, 2022
- Micron Technology, Inc.
- Corrado Villa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance via contacts in a memory device
- Patent number 11,430,950
- Issue date Aug 30, 2022
- Micron Technology, Inc.
- Giulio Albini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Frequency-tunable nano-oscillator device and computing unit using t...
- Patent number 11,431,291
- Issue date Aug 30, 2022
- Korea Institute of Science and Technology
- Suyoun Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHASE CHANGE MEMORY CELL SIDEWALL HEATER
- Publication number 20240107900
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RANDOM NUMBER GENERATION BASED ON THRESHOLD VOLTAGE RANDOMNESS
- Publication number 20240057489
- Publication date Feb 15, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SELECTOR
- Publication number 20230371279
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON
- Publication number 20230363297
- Publication date Nov 9, 2023
- Intel Corporation
- Luca Fumagalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC MEMORY CELL DESIGN
- Publication number 20230354619
- Publication date Nov 2, 2023
- Micron Technology, Inc.
- Mattia Robustelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH AND PIER ARCHITECTURES FOR THREE-DIMENSIONAL MEMORY ARRAYS
- Publication number 20230329010
- Publication date Oct 12, 2023
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPARSE PIERS FOR THREE-DIMENSIONAL MEMORY ARRAYS
- Publication number 20230309426
- Publication date Sep 28, 2023
- Micron Technology, Inc.
- Stephen W. Russell
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING ELEMENT AND MEMORY DEVICE
- Publication number 20230301205
- Publication date Sep 21, 2023
- KIOXIA Corporation
- Taichi IGARASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED PHASE-CHANGE MEMORY CELL WITH SELF-ALIGNED ELECTRODE AND R...
- Publication number 20230263080
- Publication date Aug 17, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CROSS-POINT PHASE CHANGE MEMORY
- Publication number 20230180640
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES
- Publication number 20230180643
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230165173
- Publication date May 25, 2023
- SK HYNIX INC.
- Gwang Hyuk SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPLYING INERT ION BEAM ETCHING FOR IMPROVING A PROFILE AND REPAIRI...
- Publication number 20230165169
- Publication date May 25, 2023
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20230100433
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEURAL NETWORK MEMORY
- Publication number 20230058092
- Publication date Feb 23, 2023
- Micron Technology, Inc.
- Mattia Boniardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...
- Publication number 20230055569
- Publication date Feb 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE AND MEMORY DEVICE INCLUDING THE SAME
- Publication number 20230042262
- Publication date Feb 9, 2023
- Samsung Electronics Co., Ltd.
- Minwoo CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
DECODING FOR A MEMORY DEVICE
- Publication number 20230032006
- Publication date Feb 2, 2023
- Micron Technology, Inc.
- Paolo Fantini
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICES INCLUDING A PASSIVE MATERIAL BETWEEN MEMORY CELLS AND CONDU...
- Publication number 20230029529
- Publication date Feb 2, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTIVE SEALANT FOR CHALCOGENIDE MATERIAL AND METHODS FOR FORMIN...
- Publication number 20230023105
- Publication date Jan 26, 2023
- Micron Technology, Inc.
- Farrell M. Good
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIKE CURRENT SUPPRESSION IN A MEMORY ARRAY
- Publication number 20230018390
- Publication date Jan 19, 2023
- Micron Technology, Inc.
- Sundaravadivel Rajarajan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRONIC DEVICE AND METHOD OF MANUFACTURING ELECTRONIC DEVICE
- Publication number 20220392959
- Publication date Dec 8, 2022
- SK HYNIX INC.
- Bong Hoon JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE EQUALIZATION FOR PILLARS OF A MEMORY ARRAY
- Publication number 20220392527
- Publication date Dec 8, 2022
- Micron Technology, Inc.
- Corrado Villa
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN PLANAR STRUCTURES
- Publication number 20220384720
- Publication date Dec 1, 2022
- Micron Technology, Inc.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN VERTICAL STRUCTURES
- Publication number 20220384719
- Publication date Dec 1, 2022
- Micron Technology, Inc.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY
- Publication number 20220384721
- Publication date Dec 1, 2022
- STMicroelectronics (Crolles 2) SAS
- Pascal GOURAUD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS
- Publication number 20220384722
- Publication date Dec 1, 2022
- Micron Technology, Inc.
- Thomas M. Graettinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL STRUCTURES FOR MEMORY CELLS IN VERTICAL STRUCTURES
- Publication number 20220384723
- Publication date Dec 1, 2022
- Micron Technology, Inc.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF SELECTOR ON CONFINED PHASE CHANGE MEMORY
- Publication number 20220367797
- Publication date Nov 17, 2022
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Generating Self-Aligned Heater for PCRAM Using Filaments
- Publication number 20220367795
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Chih Lai
- G11 - INFORMATION STORAGE

Compounds of sulfur, selenium or tellurium

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices comprising threshold switching materials

Three dimensional semiconductor memory devices

Phase change memory structure with efficient heating system

Composite electrode material chemistry

Selector device and method of making the same

Memory devices

Resistive interface material

Multi-component cell architectures for a memory device

3D memory array with memory cells having a 3D selector and a storag...

Efficient fabrication of memory structures

Three dimensional memory array

Techniques for forming memory structures

Resistive memory device

Tapered memory cell profiles

Fabrication of electrodes for memory cells

Memory device with multi-layer liner structure

Methods of forming a memory cell comprising a metal chalcogenide ma...

Buffer layer in memory cell to prevent metal redeposition

Metasurface phase change communicator

Spike current suppression in a memory array

Semiconductor devices including a passive material between memory c...

Self-aligned memory decks in cross-point memory arrays

Neural network memory

Material implication operations in memory

Electronic device and method of manufacturing electronic device

Electronic devices comprising metal oxide materials and related met...

Integration of selector on confined phase change memory

Voltage equalization for pillars of a memory array

Low resistance via contacts in a memory device

Frequency-tunable nano-oscillator device and computing unit using t...

Patents Applicationslast 30 patents

PHASE CHANGE MEMORY CELL SIDEWALL HEATER

RANDOM NUMBER GENERATION BASED ON THRESHOLD VOLTAGE RANDOMNESS

MEMORY SELECTOR

TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON

ASYMMETRIC MEMORY CELL DESIGN

TRENCH AND PIER ARCHITECTURES FOR THREE-DIMENSIONAL MEMORY ARRAYS

SPARSE PIERS FOR THREE-DIMENSIONAL MEMORY ARRAYS

SWITCHING ELEMENT AND MEMORY DEVICE

CONFINED PHASE-CHANGE MEMORY CELL WITH SELF-ALIGNED ELECTRODE AND R...

STACKED CROSS-POINT PHASE CHANGE MEMORY

DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

APPLYING INERT ION BEAM ETCHING FOR IMPROVING A PROFILE AND REPAIRI...

BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION

NEURAL NETWORK MEMORY

MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...

SWITCHING DEVICE AND MEMORY DEVICE INCLUDING THE SAME

DECODING FOR A MEMORY DEVICE

DEVICES INCLUDING A PASSIVE MATERIAL BETWEEN MEMORY CELLS AND CONDU...

PROTECTIVE SEALANT FOR CHALCOGENIDE MATERIAL AND METHODS FOR FORMIN...

SPIKE CURRENT SUPPRESSION IN A MEMORY ARRAY

ELECTRONIC DEVICE AND METHOD OF MANUFACTURING ELECTRONIC DEVICE

VOLTAGE EQUALIZATION FOR PILLARS OF A MEMORY ARRAY

MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN PLANAR STRUCTURES

MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN VERTICAL STRUCTURES

PHASE CHANGE MEMORY

MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS

SIDEWALL STRUCTURES FOR MEMORY CELLS IN VERTICAL STRUCTURES

INTEGRATION OF SELECTOR ON CONFINED PHASE CHANGE MEMORY

Generating Self-Aligned Heater for PCRAM Using Filaments