comprising a barrier layer to prevent diffusion of hydrogen or oxygen

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CPC
H01L28/57

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor

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H01L28/57comprising a barrier layer to prevent diffusion of hydrogen or oxygen

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Rapid thermal annealing (RTA) methodologies for integration of pero...
- Patent number 12,094,923
- Issue date Sep 17, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitors with continuous dielectric layer and methods of f...
- Patent number 12,034,086
- Issue date Jul 9, 2024
- Somilkumar J. Rathi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pocket flow for trench capacitors integrated with planar capacitors...
- Patent number 11,996,438
- Issue date May 28, 2024
- Kepler Computing Inc.
- Somilkumar J. Rathi
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual hydrogen barrier layer for trench capacitors integrated with l...
- Patent number 11,961,877
- Issue date Apr 16, 2024
- Kepler Computing Inc.
- Somilkumar J. Rathi
- G11 - INFORMATION STORAGE
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,017
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,018
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell, capacitive memory structure, and methods thereof
- Patent number 11,950,430
- Issue date Apr 2, 2024
- FERROELECTRIC MEMORY GMBH
- Stefan Ferdinand Müller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer electrode to improve performance of ferroelectric memor...
- Patent number 11,916,127
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,916,149
- Issue date Feb 27, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manganese-doped perovskite layers and semiconductor device incorpor...
- Patent number 11,908,943
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a perovskite-material based planar capacitor...
- Patent number 11,908,704
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a perovskite-material based trench capacitor...
- Patent number 11,894,417
- Issue date Feb 6, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
B-site doped perovskite layers and semiconductor device incorporati...
- Patent number 11,888,067
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,888,066
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual hydrogen barrier layer for memory devices
- Patent number 11,869,928
- Issue date Jan 9, 2024
- Kepler Computing Inc.
- Noriyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,849,588
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fu-Chen Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
B-site doped perovskite layers and semiconductor device incorporati...
- Patent number 11,848,386
- Issue date Dec 19, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor comprising a bismuth metal oxide-based lead titanate thin...
- Patent number 11,849,590
- Issue date Dec 19, 2023
- Texas Instruments Incorporated
- Carl Sebastian Morandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,837,664
- Issue date Dec 5, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor and method for fabricating the same
- Patent number 11,791,374
- Issue date Oct 17, 2023
- SK Hynix Inc.
- Myung-Soo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom-electrode interface structure for memory
- Patent number 11,792,996
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rapid thermal annealing (RTA) methodologies for integration of pero...
- Patent number 11,769,790
- Issue date Sep 26, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,757,043
- Issue date Sep 12, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric device film stacks with texturing layer, and method o...
- Patent number 11,659,714
- Issue date May 23, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,469,327
- Issue date Oct 11, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,444,203
- Issue date Sep 13, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,417,768
- Issue date Aug 16, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,411,116
- Issue date Aug 9, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,398,570
- Issue date Jul 26, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,355,643
- Issue date Jun 7, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240421229
- Publication date Dec 19, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCURRENT COMPENSATION IN A MEMORY SYSTEM
- Publication number 20240274720
- Publication date Aug 15, 2024
- Micron Technology, Inc.
- Hiroshi Akamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240088299
- Publication date Mar 14, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240074206
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fu-Chen CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
CAPACITOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240014251
- Publication date Jan 11, 2024
- SK HYNIX INC.
- Myung-Soo LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM-ELECTRODE INTERFACE STRUCTURE FOR MEMORY
- Publication number 20230363178
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED PLANAR CAPACITOR...
- Publication number 20230298905
- Publication date Sep 21, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED TRENCH CAPACITOR...
- Publication number 20230246064
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...
- Publication number 20230246063
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...
- Publication number 20230246062
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANGANESE-DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPOR...
- Publication number 20230231055
- Publication date Jul 20, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...
- Publication number 20230215952
- Publication date Jul 6, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...
- Publication number 20230215953
- Publication date Jul 6, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL HYDROGEN BARRIER LAYER FOR MEMORY DEVICES
- Publication number 20230187476
- Publication date Jun 15, 2023
- Kepler Computing Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CHARGE TRAP SITE AND METHOD OF FABRI...
- Publication number 20230170381
- Publication date Jun 1, 2023
- SK HYNIX INC.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230163216
- Publication date May 25, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230155028
- Publication date May 18, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230155029
- Publication date May 18, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230142605
- Publication date May 11, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230128526
- Publication date Apr 27, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230123515
- Publication date Apr 20, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230057354
- Publication date Feb 23, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220231033
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fu-Chen CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, CAPACITIVE MEMORY STRUCTURE, AND METHODS THEREOF
- Publication number 20220139937
- Publication date May 5, 2022
- Ferroelectric Memory GmbH
- Stefan Ferdinand Müller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20220130947
- Publication date Apr 28, 2022
- SK HYNIX INC.
- Myung-Soo LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20220077319
- Publication date Mar 10, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR COMPRISING A BISMUTH METAL OXIDE-BASED LEAD TITANATE THIN...
- Publication number 20220005814
- Publication date Jan 6, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Carl Sebastian MORANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210343872
- Publication date Nov 4, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210343871
- Publication date Nov 4, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210343873
- Publication date Nov 4, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS

comprising a barrier layer to prevent diffusion of hydrogen or oxygen

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Rapid thermal annealing (RTA) methodologies for integration of pero...

Trench capacitors with continuous dielectric layer and methods of f...

Pocket flow for trench capacitors integrated with planar capacitors...

Dual hydrogen barrier layer for trench capacitors integrated with l...

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Memory cell, capacitive memory structure, and methods thereof

Multi-layer electrode to improve performance of ferroelectric memor...

Doped polar layers and semiconductor device incorporating same

Manganese-doped perovskite layers and semiconductor device incorpor...

Method of fabricating a perovskite-material based planar capacitor...

Method of fabricating a perovskite-material based trench capacitor...

B-site doped perovskite layers and semiconductor device incorporati...

Doped polar layers and semiconductor device incorporating same

Dual hydrogen barrier layer for memory devices

Semiconductor device and method of forming the same

B-site doped perovskite layers and semiconductor device incorporati...

Capacitor comprising a bismuth metal oxide-based lead titanate thin...

Doped polar layers and semiconductor device incorporating same

Capacitor and method for fabricating the same

Bottom-electrode interface structure for memory

Rapid thermal annealing (RTA) methodologies for integration of pero...

Doped polar layers and semiconductor device incorporating same

Ferroelectric device film stacks with texturing layer, and method o...

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Patents Applicationslast 30 patents

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

CONCURRENT COMPENSATION IN A MEMORY SYSTEM

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

CAPACITOR AND METHOD FOR FABRICATING THE SAME

BOTTOM-ELECTRODE INTERFACE STRUCTURE FOR MEMORY

METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED PLANAR CAPACITOR...

METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED TRENCH CAPACITOR...

RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...

RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...

MANGANESE-DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPOR...

B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...

B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...

DUAL HYDROGEN BARRIER LAYER FOR MEMORY DEVICES

SEMICONDUCTOR DEVICE INCLUDING CHARGE TRAP SITE AND METHOD OF FABRI...

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

MEMORY CELL, CAPACITIVE MEMORY STRUCTURE, AND METHODS THEREOF

CAPACITOR AND METHOD FOR FABRICATING THE SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

CAPACITOR COMPRISING A BISMUTH METAL OXIDE-BASED LEAD TITANATE THIN...

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME