comprising a charge trapping insulator

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CPC
H01L21/28282

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28282comprising a charge trapping insulator

Industries

Patents Grantslast 30 patents

Information Patent Grant
Vertical-type memory device
- Patent number 10,566,346
- Issue date Feb 18, 2020
- Samsung Electronics Co., Ltd.
- Tak Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method for fabricating the same
- Patent number 10,510,765
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yun-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Impact ionization semiconductor device and manufacturing method the...
- Patent number 10,510,903
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tuo-Hung Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arrays of elevationally-extending strings of memory cells and metho...
- Patent number 10,504,917
- Issue date Dec 10, 2019
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 10,504,912
- Issue date Dec 10, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays
- Patent number 10,497,715
- Issue date Dec 3, 2019
- Micron Technology, Inc.
- Changhan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and manufacturing method thereof
- Patent number 10,497,716
- Issue date Dec 3, 2019
- SK Hynix Inc.
- In Su Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,490,567
- Issue date Nov 26, 2019
- SK Hynix Inc.
- Kang Sik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 10,483,273
- Issue date Nov 19, 2019
- Renesas Electronics Corporation
- Hideaki Yamakoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 10,483,276
- Issue date Nov 19, 2019
- Renesas Electronics Corporation
- Yoshiyuki Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 10,483,279
- Issue date Nov 19, 2019
- Institute of Microelectronics, Chinese Academy of Sciences
- Tianchun Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having pads of varying widths
- Patent number 10,483,203
- Issue date Nov 19, 2019
- SK hynix Inc.
- Yung Jun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming si3nX, methods of forming insulator material bet...
- Patent number 10,483,407
- Issue date Nov 19, 2019
- Micron Technology, Inc.
- Fei Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,483,275
- Issue date Nov 19, 2019
- Renesas Electronics Corporation
- Shibun Tsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having a nonvolatile m...
- Patent number 10,483,114
- Issue date Nov 19, 2019
- Renesas Electronics Corporation
- Masaaki Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation interfaces
- Patent number 10,483,155
- Issue date Nov 19, 2019
- Micron Technology, Inc.
- Arup Bhattacharyya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-trap layer separation and word-line isolation in a 3-D NAND...
- Patent number 10,468,259
- Issue date Nov 5, 2019
- Applied Materials, Inc.
- Vinod Robert Purayath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 10,468,102
- Issue date Nov 5, 2019
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming material layer
- Patent number 10,468,256
- Issue date Nov 5, 2019
- Samsung Electronics Co., Ltd.
- Sun-min Moon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device
- Patent number 10,468,431
- Issue date Nov 5, 2019
- Samsung Electronics Co., Ltd.
- Jung Ho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of manufacturing the same
- Patent number 10,461,092
- Issue date Oct 29, 2019
- TOSHIBA MEMORY CORPORATION
- Shinya Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated structures having gallium-containing regions
- Patent number 10,460,943
- Issue date Oct 29, 2019
- Micron Technology, Inc.
- Chris M Carlson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 10,453,707
- Issue date Oct 22, 2019
- Samsung Electronics Co., Ltd.
- Yong Seok Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Void formation in charge trap structures
- Patent number 10,453,855
- Issue date Oct 22, 2019
- Micron Technology, Inc.
- Chris M Carlson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,453,745
- Issue date Oct 22, 2019
- Samsung Electronics Co., Ltd.
- Ji-Hoon Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Void formation for charge trap structures
- Patent number 10,446,572
- Issue date Oct 15, 2019
- Micron Technology, Inc.
- Chris M Carlson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and integrated structures
- Patent number 10,446,574
- Issue date Oct 15, 2019
- Micron Technology, Inc.
- Chris M. Carlson
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods used in forming an array of elevationally-extending strings...
- Patent number 10,446,578
- Issue date Oct 15, 2019
- Micron Technology, Inc.
- Collin Howder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,446,569
- Issue date Oct 15, 2019
- Renesas Electronics Corporation
- Tamotsu Ogata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 10,446,656
- Issue date Oct 15, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Memory Arrays And Methods Used In Forming A Memory Array Comprising...
- Publication number 20210013221
- Publication date Jan 14, 2021
- Micron Technology, Inc.
- David Daycock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED-NANOSHEET SEMICONDUCTOR STRUCTURES
- Publication number 20200402984
- Publication date Dec 24, 2020
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING THROUGH-ARRAY CONTACT VI...
- Publication number 20200402992
- Publication date Dec 24, 2020
- SANDISK TECHNOLOGIES LLC
- Yoshitaka OTSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays And Methods Used In Forming A Memory Array And Conduc...
- Publication number 20200402890
- Publication date Dec 24, 2020
- Micron Technology, Inc.
- Indra V. Chary
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Having Metal-Containing Liners Along Bottoms...
- Publication number 20200402993
- Publication date Dec 24, 2020
- Micron Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISCONTINUOUS CHARGE TRAP LAYER MEMORY DEVICE
- Publication number 20200388628
- Publication date Dec 10, 2020
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING SILICON NI...
- Publication number 20200373323
- Publication date Nov 26, 2020
- SANDISK TECHNOLOGIES LLC
- Shigehisa Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A FLASH MEMORY
- Publication number 20200373164
- Publication date Nov 26, 2020
- UNITED MICROELECTRONICS CORP.
- WEI XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200365612
- Publication date Nov 19, 2020
- Macronix International Co., Ltd.
- Chih-Wei HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA CONTACT, MEMORY DEVICE, AND METHOD OF FORMING SEMICONDUCTOR STR...
- Publication number 20200328154
- Publication date Oct 15, 2020
- Macronix International Co., Ltd.
- Yu-Wei JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NOR MEMORY HAVING VERTICAL GATE STRUCTURES
- Publication number 20200328224
- Publication date Oct 15, 2020
- Macronix International Co., Ltd.
- Erh-Kun Lai
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICE AND MAN...
- Publication number 20200312866
- Publication date Oct 1, 2020
- Macronix International Co., Ltd.
- Yao-An Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200303394
- Publication date Sep 24, 2020
- WINBOND ELECTRONICS CORP.
- Wen Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K DIELECTRIC LAYER IN THREE-DIMENSIONAL MEMORY DEVICES AND MET...
- Publication number 20200303399
- Publication date Sep 24, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED VERTICAL CONDUCTI...
- Publication number 20200303397
- Publication date Sep 24, 2020
- SANDISK TECHNOLOGIES LLC
- Zhixin CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE CHANNEL MEMORY DEVICE
- Publication number 20200295015
- Publication date Sep 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Shu HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200295031
- Publication date Sep 17, 2020
- Macronix International Co., Ltd.
- Hang-Ting Lue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A CHANNEL CONNECTION STR...
- Publication number 20200286909
- Publication date Sep 10, 2020
- SANDISK TECHNOLOGIES LLC
- Takashi YUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH A SILICON CARBON NITRIDE INTER...
- Publication number 20200287007
- Publication date Sep 10, 2020
- SANDISK TECHNOLOGIES LLC
- Yuki KASAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH ARCHITECTURE OF INCREASED NUM...
- Publication number 20200279863
- Publication date Sep 3, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE WITH MULTIPLE DIVISIONS FOR THREE-DIMENSIONAL M...
- Publication number 20200273874
- Publication date Aug 27, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL HOLE AND BITLINE ARCHITECTURE AND METHOD TO IMPROVE PAGE OR...
- Publication number 20200266207
- Publication date Aug 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200258898
- Publication date Aug 13, 2020
- Macronix International Co., Ltd.
- Chih-Wei HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL ETCHING PROCESS WITH IN-SITU FORMATION OF PROTECTIVE LAYER
- Publication number 20200258757
- Publication date Aug 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Yu Qi WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash Memory Structure and Method of Forming the Same
- Publication number 20200258899
- Publication date Aug 13, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Sheng-Chih Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICE WITHOUT CONDUCT...
- Publication number 20200251487
- Publication date Aug 6, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhao Hui Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF MEMORY CELL AND METHOD FOR FABRICATING THE SAME
- Publication number 20200251482
- Publication date Aug 6, 2020
- United Microelectronics Corp.
- Chin-Chin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING CHANNELS WITH LATERALLY...
- Publication number 20200251485
- Publication date Aug 6, 2020
- SANDISK TECHNOLOGIES LLC
- Manabu KAKAZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20200243555
- Publication date Jul 30, 2020
- Macronix International Co., Ltd.
- Chih-Wei Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL STACKED SEMICONDUCTOR DEVICE AND METHOD OF MANUFA...
- Publication number 20200243556
- Publication date Jul 30, 2020
- Macronix International Co., Ltd.
- Guan-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS

comprising a charge trapping insulator

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Vertical-type memory device

Memory device and method for fabricating the same

Impact ionization semiconductor device and manufacturing method the...

Arrays of elevationally-extending strings of memory cells and metho...

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Memory arrays

Semiconductor memory device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor device

Semiconductor device and method of manufacturing semiconductor device

Method of manufacturing a semiconductor device

Semiconductor memory device having pads of varying widths

Methods of forming si3nX, methods of forming insulator material bet...

Semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor device having a nonvolatile m...

Trench isolation interfaces

Charge-trap layer separation and word-line isolation in a 3-D NAND...

Semiconductor memory having both volatile and non-volatile function...

Methods of forming material layer

Semiconductor device

Semiconductor memory device and method of manufacturing the same

Integrated structures having gallium-containing regions

Method for fabricating semiconductor device

Void formation in charge trap structures

Semiconductor device and method for fabricating the same

Void formation for charge trap structures

Memory cells and integrated structures

Methods used in forming an array of elevationally-extending strings...

Semiconductor device and manufacturing method thereof

Memory transistor with multiple charge storing layers and a high wo...

Patents Applicationslast 30 patents

Memory Arrays And Methods Used In Forming A Memory Array Comprising...

STACKED-NANOSHEET SEMICONDUCTOR STRUCTURES

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING THROUGH-ARRAY CONTACT VI...

Memory Arrays And Methods Used In Forming A Memory Array And Conduc...

Integrated Assemblies Having Metal-Containing Liners Along Bottoms...

DISCONTINUOUS CHARGE TRAP LAYER MEMORY DEVICE

METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING SILICON NI...

METHOD OF FABRICATING A FLASH MEMORY

THREE DIMENSIONAL MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

VIA CONTACT, MEMORY DEVICE, AND METHOD OF FORMING SEMICONDUCTOR STR...

3D NOR MEMORY HAVING VERTICAL GATE STRUCTURES

SEMICONDUCTOR STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICE AND MAN...

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

HIGH-K DIELECTRIC LAYER IN THREE-DIMENSIONAL MEMORY DEVICES AND MET...

THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED VERTICAL CONDUCTI...

DOUBLE CHANNEL MEMORY DEVICE

THREE DIMENSIONAL MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A CHANNEL CONNECTION STR...

THREE-DIMENSIONAL MEMORY DEVICE WITH A SILICON CARBON NITRIDE INTER...

THREE-DIMENSIONAL MEMORY DEVICES WITH ARCHITECTURE OF INCREASED NUM...

STAIRCASE STRUCTURE WITH MULTIPLE DIVISIONS FOR THREE-DIMENSIONAL M...

CHANNEL HOLE AND BITLINE ARCHITECTURE AND METHOD TO IMPROVE PAGE OR...

THREE DIMENSIONAL MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

NOVEL ETCHING PROCESS WITH IN-SITU FORMATION OF PROTECTIVE LAYER

Flash Memory Structure and Method of Forming the Same

METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICE WITHOUT CONDUCT...

STRUCTURE OF MEMORY CELL AND METHOD FOR FABRICATING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING CHANNELS WITH LATERALLY...

MEMORY DEVICE AND MANUFACTURING METHOD FOR THE SAME

THREE-DIMENSIONAL STACKED SEMICONDUCTOR DEVICE AND METHOD OF MANUFA...