comprising a layer which is used for its ferroelectric properties

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H01L21/28291

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28291comprising a layer which is used for its ferroelectric properties

Industries

Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric device and method of manufacturing the same
- Patent number 10,804,294
- Issue date Oct 13, 2020
- SK Hynix Inc.
- Hyangkeun Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device and method of manufacturing the same
- Patent number 10,515,698
- Issue date Dec 24, 2019
- SK hynix Inc.
- Joong Sik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of fabricating ferroelectric memory devices
- Patent number 10,475,653
- Issue date Nov 12, 2019
- SK hynix Inc.
- Hyangkeun Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device and method of manufacturing the same
- Patent number 10,475,813
- Issue date Nov 12, 2019
- SK hynix Inc.
- Hyangkeun Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory devices
- Patent number 10,475,814
- Issue date Nov 12, 2019
- SK hynix Inc.
- Hyangkeun Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including ferroelectric memory cells and methods...
- Patent number 10,468,495
- Issue date Nov 5, 2019
- Alacrity Semiconductors, Inc.
- James Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully depleted semiconductor on insulator transistor with enhanced...
- Patent number 10,460,944
- Issue date Oct 29, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell and methods thereof
- Patent number 10,460,788
- Issue date Oct 29, 2019
- FERROELECTRIC MEMORY GMBH
- Stefan Müller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device and method of manufacturing the same
- Patent number 10,453,514
- Issue date Oct 22, 2019
- SK hynix Inc.
- Hyangkeun Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell and methods thereof
- Patent number 10,438,645
- Issue date Oct 8, 2019
- FERROELECTRIC MEMORY GMBH
- Stefan Ferdinand Müller
- G11 - INFORMATION STORAGE
Information Patent Grant
Polarization-based configurable logic gate
- Patent number 10,424,379
- Issue date Sep 24, 2019
- NaMLab gGmbH
- Stefan Slesazeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device
- Patent number 10,388,786
- Issue date Aug 20, 2019
- SK hynix Inc.
- Sanghun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced capacitance coupling effects in devices
- Patent number 10,374,052
- Issue date Aug 6, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical ferroelectric thin film storage transistor and data write...
- Patent number 10,367,004
- Issue date Jul 30, 2019
- NUSTORAGE TECHNOLOGY CO., LTD.
- Fu-Chou Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating a damascene self-aligned ferroelectric rando...
- Patent number 10,347,829
- Issue date Jul 9, 2019
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neuromorphic device
- Patent number 10,339,446
- Issue date Jul 2, 2019
- SK Hynix Inc.
- Hyung-Dong Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Negative capacitance matching in gate electrode structures
- Patent number 10,332,969
- Issue date Jun 25, 2019
- GLOBALFOUNDRIES Inc.
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene oxygen barrier and hydrogen barrier for ferroelectric ran...
- Patent number 10,304,731
- Issue date May 28, 2019
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical ferroelectric field effect transistor constructions, const...
- Patent number 10,297,612
- Issue date May 21, 2019
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminated structure and spin modulation element
- Patent number 10,263,181
- Issue date Apr 16, 2019
- TDK Corporation
- Eiji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polar, chiral, and non-centro-symmetric ferroelectric materials, me...
- Patent number 10,242,989
- Issue date Mar 26, 2019
- Micron Technology, Inc.
- Sumeet C. Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device and fabrication method thereof
- Patent number 10,211,312
- Issue date Feb 19, 2019
- Imec VZW
- Jan Van Houdt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical ferroelectric memory device and a method for manufacturing...
- Patent number 10,211,223
- Issue date Feb 19, 2019
- Imec VZW
- Jan Van Houdt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device
- Patent number 10,199,384
- Issue date Feb 5, 2019
- Arkema France
- Fabrice Domingues Dos Santos
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
Semiconductor ferroelectric storage transistor and method for manuf...
- Patent number 10,192,972
- Issue date Jan 29, 2019
- National Institute of Advanced Industrial Science and Technology
- Shigeki Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance steep-switch field effect transistor with inte...
- Patent number 10,170,520
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferro-FET device with buried buffer/ferroelectric layer stack
- Patent number 10,163,933
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped ferroelectric hafnium oxide film devices
- Patent number 10,153,155
- Issue date Dec 11, 2018
- University of Florida Research Foundation, Incorporated
- Toshikazu Nishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical ferroelectric field effect transistor constructions, const...
- Patent number 10,153,299
- Issue date Dec 11, 2018
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered metal nitride structure
- Patent number 10,147,782
- Issue date Dec 4, 2018
- International Business Machines Corporation
- Martin M. Frank
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC MEMORY DEVICE WITH SELECT GATE TRANSISTOR AND METHOD...
- Publication number 20200411533
- Publication date Dec 31, 2020
- SANDISK TECHNOLOGIES LLC
- Johann ALSMEIER
- G11 - INFORMATION STORAGE
Information Patent Application
WAKEUP-FREE FERROELECTRIC MEMORY DEVICE
- Publication number 20200357927
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Mickey Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH
- Publication number 20200343265
- Publication date Oct 29, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Hsiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200328287
- Publication date Oct 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pin-Shiang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE STORAGE MEMORY DEVICE INCLUDING FERROELECTRIC LAYER BETWEEN...
- Publication number 20200321444
- Publication date Oct 8, 2020
- SANDISK TECHNOLOGIES LLC
- Yu-Chung LIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH (ANTI)FERROELECTRIC SPACER STRUCTURES
- Publication number 20200312978
- Publication date Oct 1, 2020
- Intel Corporation
- Jack KAVALIEROS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR FABRICATION FOR MEMORY APPLICATIONS
- Publication number 20200251495
- Publication date Aug 6, 2020
- Applied Materials, Inc.
- Jaesoo AHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH MOBILITY-ENHANCED VERTICAL CHA...
- Publication number 20200235116
- Publication date Jul 23, 2020
- SANDISK TECHNOLOGIES LLC
- Chun GE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES INCLUDING A BACKSIDE...
- Publication number 20200227439
- Publication date Jul 16, 2020
- SANDISK TECHNOLOGIES LLC
- Koji SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TRANSISTORS TO STORE MULTIPLE STATES OF RESISTANCES F...
- Publication number 20200212224
- Publication date Jul 2, 2020
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICES EMPLOYING CONDUCTIVITY MODULATION OF A...
- Publication number 20200203379
- Publication date Jun 25, 2020
- SANDISK TECHNOLOGIES LLC
- Alan Kalitsov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistors with Ferroelectric Dielectric Materials
- Publication number 20200127111
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FERROELECTRIC MATERIAL AND METHOD OF FA...
- Publication number 20200119047
- Publication date Apr 16, 2020
- SK HYNIX INC.
- Hyangkeun YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FERROELECTRIC ALUMINUM NITRIDE
- Publication number 20200098871
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Miin-Jang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC GATE STACK FOR BAND-TO-BAND TUNNELING REDUCTION
- Publication number 20200098925
- Publication date Mar 26, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH A FERROELECTRIC CAPACITOR INTEGRATED WITH A TRANST...
- Publication number 20200075609
- Publication date Mar 5, 2020
- Intel Corporation
- Daniel H. Morris
- G11 - INFORMATION STORAGE
Information Patent Application
FABRICATION OF UNDOPED HFO2 FERROELECTRIC LAYER USING PVD
- Publication number 20200066511
- Publication date Feb 27, 2020
- Intel Corporation
- Ilya KARPOV
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200058658
- Publication date Feb 20, 2020
- Samsung Electronics Co., Ltd.
- Jinseong HEO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200013899
- Publication date Jan 9, 2020
- Samsung Electronics Co., Ltd.
- WEONHONG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFERROELECTRIC PEROVSKITE GATE OXIDE FOR TRANSISTOR APPLICATIONS
- Publication number 20200006516
- Publication date Jan 2, 2020
- Sasikanth MANIPATRUNI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC SEMICONDUCTOR DEVICE
- Publication number 20190393355
- Publication date Dec 26, 2019
- SK HYNIX INC.
- Hyangkeun YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FeFET TRANSISTOR
- Publication number 20190386142
- Publication date Dec 19, 2019
- STMicroelectronics (Crolles 2) SAS
- Mickael GROS-JEAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190355584
- Publication date Nov 21, 2019
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE ISFET WITH FERROELECTRIC MATERIAL
- Publication number 20190346404
- Publication date Nov 14, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR MEMORY ELEMENT, OTHER ELEMENTS, AND THEIR PRODUCTION...
- Publication number 20190273086
- Publication date Sep 5, 2019
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Mitsue TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FABRICATE CAPACITANCE-MATCHING FET AND RELATED DEVICE
- Publication number 20190267446
- Publication date Aug 29, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yongtian HOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertically Stacked Multichannel Pyramid Transistor
- Publication number 20190259866
- Publication date Aug 22, 2019
- Mitsubishi Electric Research Laboratories, Inc.
- Koon Hoo Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CAPACITANCE COUPLING EFFECTS IN DEVICES
- Publication number 20190252514
- Publication date Aug 15, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190244973
- Publication date Aug 8, 2019
- SK HYNIX INC.
- Hyangkeun YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FINFET AND METHOD OF FABRICATING THEREOF
- Publication number 20190237464
- Publication date Aug 1, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng CHING
- H01 - BASIC ELECTRIC ELEMENTS

comprising a layer which is used for its ferroelectric properties

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ferroelectric device and method of manufacturing the same

Ferroelectric memory device and method of manufacturing the same

Methods of fabricating ferroelectric memory devices

Ferroelectric memory device and method of manufacturing the same

Ferroelectric memory devices

Integrated circuit including ferroelectric memory cells and methods...

Fully depleted semiconductor on insulator transistor with enhanced...

Memory cell and methods thereof

Ferroelectric memory device and method of manufacturing the same

Memory cell and methods thereof

Polarization-based configurable logic gate

Nonvolatile memory device

Reduced capacitance coupling effects in devices

Vertical ferroelectric thin film storage transistor and data write...

Method for fabricating a damascene self-aligned ferroelectric rando...

Neuromorphic device

Negative capacitance matching in gate electrode structures

Damascene oxygen barrier and hydrogen barrier for ferroelectric ran...

Vertical ferroelectric field effect transistor constructions, const...

Laminated structure and spin modulation element

Polar, chiral, and non-centro-symmetric ferroelectric materials, me...

Ferroelectric memory device and fabrication method thereof

Vertical ferroelectric memory device and a method for manufacturing...

Ferroelectric memory device

Semiconductor ferroelectric storage transistor and method for manuf...

Negative-capacitance steep-switch field effect transistor with inte...

Ferro-FET device with buried buffer/ferroelectric layer stack

Doped ferroelectric hafnium oxide film devices

Vertical ferroelectric field effect transistor constructions, const...

Tapered metal nitride structure

Patents Applicationslast 30 patents

FERROELECTRIC MEMORY DEVICE WITH SELECT GATE TRANSISTOR AND METHOD...

WAKEUP-FREE FERROELECTRIC MEMORY DEVICE

FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CHARGE STORAGE MEMORY DEVICE INCLUDING FERROELECTRIC LAYER BETWEEN...

TRANSISTOR DEVICE WITH (ANTI)FERROELECTRIC SPACER STRUCTURES

VERTICAL TRANSISTOR FABRICATION FOR MEMORY APPLICATIONS

THREE-DIMENSIONAL MEMORY DEVICE WITH MOBILITY-ENHANCED VERTICAL CHA...

THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES INCLUDING A BACKSIDE...

FERROELECTRIC TRANSISTORS TO STORE MULTIPLE STATES OF RESISTANCES F...

FERROELECTRIC MEMORY DEVICES EMPLOYING CONDUCTIVITY MODULATION OF A...

Field Effect Transistors with Ferroelectric Dielectric Materials

SEMICONDUCTOR DEVICE HAVING FERROELECTRIC MATERIAL AND METHOD OF FA...

SEMICONDUCTOR DEVICE WITH FERROELECTRIC ALUMINUM NITRIDE

FERROELECTRIC GATE STACK FOR BAND-TO-BAND TUNNELING REDUCTION

MEMORY CELL WITH A FERROELECTRIC CAPACITOR INTEGRATED WITH A TRANST...

FABRICATION OF UNDOPED HFO2 FERROELECTRIC LAYER USING PVD

ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

ANTIFERROELECTRIC PEROVSKITE GATE OXIDE FOR TRANSISTOR APPLICATIONS

FERROELECTRIC SEMICONDUCTOR DEVICE

FeFET TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

HIGH PERFORMANCE ISFET WITH FERROELECTRIC MATERIAL

SEMICONDUCTOR MEMORY ELEMENT, OTHER ELEMENTS, AND THEIR PRODUCTION...

METHOD TO FABRICATE CAPACITANCE-MATCHING FET AND RELATED DEVICE

Vertically Stacked Multichannel Pyramid Transistor

REDUCED CAPACITANCE COUPLING EFFECTS IN DEVICES

FERROELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME

NEGATIVE CAPACITANCE FINFET AND METHOD OF FABRICATING THEREOF