comprising amorphous/crystalline phase transition cells

Industry

CPC
G11C13/0004

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00

Current Industry

G11C13/0004comprising amorphous/crystalline phase transition cells

Industries

Patents Grantslast 30 patents

Information Patent Grant
Driver circuit for phase-change memory cells and method of driving...
- Patent number 12,148,470
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Agatino Massimo Maccarrone
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 12,148,472
- Issue date Nov 19, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cross-point array IHOLD read margin improvement
- Patent number 12,148,459
- Issue date Nov 19, 2024
- SanDisk Technologies LLC
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell in wafer backside
- Patent number 12,148,682
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Biswanath Senapati
- G11 - INFORMATION STORAGE
Information Patent Grant
Triggering of stronger write pulses in a memory device based on pri...
- Patent number 12,131,778
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Partitioned memory architecture with single resistor or dual resist...
- Patent number 12,125,530
- Issue date Oct 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device for matrix-vector multiplications
- Patent number 12,125,531
- Issue date Oct 22, 2024
- International Business Machines Corporation
- Riduan Khaddam-Aljameh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multiple transistor architecture for three-dimensional memory arrays
- Patent number 12,119,056
- Issue date Oct 15, 2024
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Grant
Fusion memory device and method of fabricating the same
- Patent number 12,119,336
- Issue date Oct 15, 2024
- Samsung Electronics Co., Ltd.
- Hyunmog Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Read algorithms for three-dimensional crosspoint memory architectures
- Patent number 12,119,057
- Issue date Oct 15, 2024
- Intel Corporation
- Rouhollah Mousavi Iraei
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device architecture
- Patent number 12,119,055
- Issue date Oct 15, 2024
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory including phase-change elements in series with...
- Patent number 12,120,967
- Issue date Oct 15, 2024
- STMicroelectronics S.r.l.
- Giovanni Campardo
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory cell
- Patent number 12,114,580
- Issue date Oct 8, 2024
- Paolo Giuseppe Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Forward looking algorithm for vertical integrated cross-point array...
- Patent number 12,112,801
- Issue date Oct 8, 2024
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of equalizing bit error rates of memory device
- Patent number 12,105,585
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Eun-chu Oh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-step pre-read for write operations in memory devices
- Patent number 12,106,803
- Issue date Oct 1, 2024
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including chalcogen compound and semiconductor...
- Patent number 12,101,942
- Issue date Sep 24, 2024
- Samsung Electronics Co., Ltd.
- Wooyoung Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell read operation techniques
- Patent number 12,094,533
- Issue date Sep 17, 2024
- Micron Technology, Inc.
- Riccardo Muzzetto
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change random access memory device
- Patent number 12,089,513
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Hsu Yen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method thereof
- Patent number 12,087,361
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Bilal Ahmad Janjua
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells with asymmetrical electrode interfaces
- Patent number 12,082,513
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including a plurality of stacked memory cells
- Patent number 12,080,345
- Issue date Sep 3, 2024
- SK hynix Inc.
- Dong Keun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, integrated circuit device and method
- Patent number 12,080,346
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jui-Jen Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device with variable resistance layers and insulating la...
- Patent number 12,075,632
- Issue date Aug 27, 2024
- SK Hynix Inc.
- Si Jung Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for programming multi-level self-selecting memory cell
- Patent number 12,073,881
- Issue date Aug 27, 2024
- Micron Technology, Inc.
- Mattia Robustelli
- G11 - INFORMATION STORAGE
Information Patent Grant
AI accelerator with MRAM, PCM, and recessed PCM bottom electrode
- Patent number 12,075,627
- Issue date Aug 27, 2024
- International Business Machines Corporation
- Ruilong Xie
- G11 - INFORMATION STORAGE
Information Patent Grant
PCM-based neural network device
- Patent number 12,067,478
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Yun Heub Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device, method for configuring memory cell in N-bit memory u...
- Patent number 12,069,970
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of manufacturing memory device
- Patent number 12,069,872
- Issue date Aug 20, 2024
- Kioxia Corporation
- Takahiko Iizuka
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of data encoding in non-volatile memories
- Patent number 12,057,164
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Win-San Khwa
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
AUTO-REFERENCED MEMORY CELL READ TECHNIQUES
- Publication number 20240386956
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE OF THE PHASE-CHANGE TYPE AND METHOD FOR READING SUCH...
- Publication number 20240386955
- Publication date Nov 21, 2024
- STMicroelectronics International N.V.
- Xavier LECOQ
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED BACKSIDE PCRAM DEVICE STRUCTURE
- Publication number 20240389481
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- G11 - INFORMATION STORAGE
Information Patent Application
CONFIGURABLE RESISTIVITY FOR LINES IN A MEMORY DEVICE
- Publication number 20240379157
- Publication date Nov 14, 2024
- Micron Technology, Inc.
- Koushik Banerjee
- G11 - INFORMATION STORAGE
Information Patent Application
OTS-BASED DYNAMIC STORAGE STRUCTURE AND OPERATION METHOD THEREOF
- Publication number 20240379159
- Publication date Nov 14, 2024
- HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Hao TONG
- G11 - INFORMATION STORAGE
Information Patent Application
CONFIGURATION BIT CIRCUIT FOR PROGRAMMABLE LOGIC DEVICE INCLUDING P...
- Publication number 20240371440
- Publication date Nov 7, 2024
- Revol-Ver Inc.
- Sung Lae CHO
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY STORED WITH ENCODED DATA
- Publication number 20240371442
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Win-San KHWA
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-SPEED AND LARGE-CURRENT ADJUSTABLE PULSE CIRCUIT, OPERATING CI...
- Publication number 20240371438
- Publication date Nov 7, 2024
- HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Xingsheng WANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, MEMORY ARRAY, AND N-BIT MEMORY UNIT
- Publication number 20240365689
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD
- Publication number 20240363159
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Jen WU
- G11 - INFORMATION STORAGE
Information Patent Application
NOVEL PHASE CHANGE RANDOM ACCESS MEMORY DEVICE
- Publication number 20240365690
- Publication date Oct 31, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chun-Hsu YEN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT WORD LINES
- Publication number 20240355385
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRON BEAM PROBING TECHNIQUES AND RELATED STRUCTURES
- Publication number 20240355685
- Publication date Oct 24, 2024
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Application
SOCKET DESIGN FOR A MEMORY DEVICE
- Publication number 20240347107
- Publication date Oct 17, 2024
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE REGULATOR CIRCUIT FOR A SWITCHING CIRCUIT LOAD
- Publication number 20240339917
- Publication date Oct 10, 2024
- STMicroelectronics S.r.l
- Marco Pasotti
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING AN ELECTRICALLY PROGRAMMABLE MEMORY CELL WITH A...
- Publication number 20240331769
- Publication date Oct 3, 2024
- Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
- Julian Pries
- G11 - INFORMATION STORAGE
Information Patent Application
REFRESH OF NEIGHBORING MEMORY CELLS BASED ON READ STATUS
- Publication number 20240321350
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY...
- Publication number 20240321355
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- Andrea Ghetti
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20240321352
- Publication date Sep 26, 2024
- KIOXIA Corporation
- Ryu OGIWARA
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE ERROR COUNTER FOR MEDIA MANAGEMENT IN A MEMORY DEVICE
- Publication number 20240321351
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- John Christopher M. Sancon
- G11 - INFORMATION STORAGE
Information Patent Application
SHARED DECODER ARCHITECTURE FOR THREE-DIMENSIONAL MEMORY ARRAYS
- Publication number 20240321349
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- Christophe Vincent Antoine Laurent
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20240321354
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Cheng CHIU
- G11 - INFORMATION STORAGE
Information Patent Application
Y-BRANCH TYPE PHASE-CHANGE ALL-OPTICAL BOOLEAN LOGIC DEVICE AND ALL...
- Publication number 20240319563
- Publication date Sep 26, 2024
- HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Xiaomin CHENG
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MATERIAL INCLUDING DEUTERIUM
- Publication number 20240324475
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STATE PROGRAMMING OF MEMORY CELLS
- Publication number 20240312534
- Publication date Sep 19, 2024
- Micron Technology, Inc.
- Jeremy M. Hirst
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SIDEWALL STRUCTURES FOR MEMORY CELLS IN VERTICAL STRUCTURES
- Publication number 20240298553
- Publication date Sep 5, 2024
- Micron Technology, Inc.
- Lorenzo Fratin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY
- Publication number 20240296885
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Elia Ambrosi
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Bit Storage Device Using Phase Change Material
- Publication number 20240292764
- Publication date Aug 29, 2024
- Toshiba Global Commerce Solutions, Inc.
- Timothy Crockett
- G11 - INFORMATION STORAGE
Information Patent Application
PRE-DECODER CIRCUITRY
- Publication number 20240265965
- Publication date Aug 8, 2024
- Micron Technology, Inc.
- Vijayakrishna J. Vankayala
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS POINT ARRAY ARCHITECTURE FOR MULTIPLE DECKS
- Publication number 20240268127
- Publication date Aug 8, 2024
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE

comprising amorphous/crystalline phase transition cells

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Driver circuit for phase-change memory cells and method of driving...

Semiconductor memory having both volatile and non-volatile function...

Cross-point array IHOLD read margin improvement

Memory cell in wafer backside

Triggering of stronger write pulses in a memory device based on pri...

Partitioned memory architecture with single resistor or dual resist...

Resistive memory device for matrix-vector multiplications

Multiple transistor architecture for three-dimensional memory arrays

Fusion memory device and method of fabricating the same

Read algorithms for three-dimensional crosspoint memory architectures

Memory device architecture

Phase-change memory including phase-change elements in series with...

Phase-change memory cell

Forward looking algorithm for vertical integrated cross-point array...

Method of equalizing bit error rates of memory device

Multi-step pre-read for write operations in memory devices

Semiconductor device including chalcogen compound and semiconductor...

Memory cell read operation techniques

Phase change random access memory device

Memory device and operating method thereof

Memory cells with asymmetrical electrode interfaces

Memory device including a plurality of stacked memory cells

Memory device, integrated circuit device and method

Electronic device with variable resistance layers and insulating la...

Techniques for programming multi-level self-selecting memory cell

AI accelerator with MRAM, PCM, and recessed PCM bottom electrode

PCM-based neural network device

Memory device, method for configuring memory cell in N-bit memory u...

Memory device and method of manufacturing memory device

Method of data encoding in non-volatile memories

Patents Applicationslast 30 patents

AUTO-REFERENCED MEMORY CELL READ TECHNIQUES

MEMORY DEVICE OF THE PHASE-CHANGE TYPE AND METHOD FOR READING SUCH...

EMBEDDED BACKSIDE PCRAM DEVICE STRUCTURE

CONFIGURABLE RESISTIVITY FOR LINES IN A MEMORY DEVICE

OTS-BASED DYNAMIC STORAGE STRUCTURE AND OPERATION METHOD THEREOF

CONFIGURATION BIT CIRCUIT FOR PROGRAMMABLE LOGIC DEVICE INCLUDING P...

NON-VOLATILE MEMORY STORED WITH ENCODED DATA

HIGH-SPEED AND LARGE-CURRENT ADJUSTABLE PULSE CIRCUIT, OPERATING CI...

MEMORY DEVICE, MEMORY ARRAY, AND N-BIT MEMORY UNIT

MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD

NOVEL PHASE CHANGE RANDOM ACCESS MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT WORD LINES

ELECTRON BEAM PROBING TECHNIQUES AND RELATED STRUCTURES

SOCKET DESIGN FOR A MEMORY DEVICE

VOLTAGE REGULATOR CIRCUIT FOR A SWITCHING CIRCUIT LOAD

METHOD OF OPERATING AN ELECTRICALLY PROGRAMMABLE MEMORY CELL WITH A...

REFRESH OF NEIGHBORING MEMORY CELLS BASED ON READ STATUS

PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY...

MEMORY DEVICE

WRITE ERROR COUNTER FOR MEDIA MANAGEMENT IN A MEMORY DEVICE

SHARED DECODER ARCHITECTURE FOR THREE-DIMENSIONAL MEMORY ARRAYS

MEMORY DEVICE AND OPERATING METHOD THEREOF

Y-BRANCH TYPE PHASE-CHANGE ALL-OPTICAL BOOLEAN LOGIC DEVICE AND ALL...

PHASE CHANGE MATERIAL INCLUDING DEUTERIUM

MULTI-STATE PROGRAMMING OF MEMORY CELLS

SIDEWALL STRUCTURES FOR MEMORY CELLS IN VERTICAL STRUCTURES

MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY

Multi-Bit Storage Device Using Phase Change Material

PRE-DECODER CIRCUITRY

CROSS POINT ARRAY ARCHITECTURE FOR MULTIPLE DECKS