comprising at least one long range structurally disordered material

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/154comprising at least one long range structurally disordered material

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Patents Grantslast 30 patents

Information Patent Grant
Methods of forming bottom dielectric isolation layers
- Patent number 12,170,230
- Issue date Dec 17, 2024
- Applied Materials, Inc.
- SanKuei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making superlattice structures with reduced defect densi...
- Patent number 11,430,869
- Issue date Aug 30, 2022
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making superlattice structures with reduced defect densi...
- Patent number 10,811,498
- Issue date Oct 20, 2020
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cascade tunneling field effect transistors
- Patent number 10,763,367
- Issue date Sep 1, 2020
- Purdue Research Foundation
- Tillmann C. Kubis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming substrate structures and semiconductor components
- Patent number 10,388,736
- Issue date Aug 20, 2019
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and replacement metal...
- Patent number 10,084,045
- Issue date Sep 25, 2018
- ATOMERA INCORPORATED
- Robert J. Mears
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor element and nitride semiconductor package
- Patent number 10,062,565
- Issue date Aug 28, 2018
- Rohm Co., Ltd.
- Shinya Takado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor element and nitride semiconductor package
- Patent number 9,905,419
- Issue date Feb 27, 2018
- Rohm Co., Ltd.
- Shinya Takado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate structure, semiconductor component and method
- Patent number 9,768,258
- Issue date Sep 19, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor element and nitride semiconductor package
- Patent number 9,472,623
- Issue date Oct 18, 2016
- Rohm Co., Ltd.
- Shinya Takado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor wafer, nitride semiconductor element, and met...
- Patent number 9,472,720
- Issue date Oct 18, 2016
- Kabushiki Kaisha Toshiba
- Kei Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a metal-to-semiconductor superlattic...
- Patent number 7,928,425
- Issue date Apr 19, 2011
- MEARS Technologies, Inc.
- Kalipatnam Vivek Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device including a superlattice w...
- Patent number 7,229,902
- Issue date Jun 12, 2007
- RJ Mears, LLC
- Robert J. Mears
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controllable conduction device with electrostatic barrier
- Patent number 7,132,713
- Issue date Nov 7, 2006
- Hitachi, Ltd.
- Kazuo Nakazato
- G11 - INFORMATION STORAGE
Information Patent Grant
Controllable conduction device
- Patent number 6,211,531
- Issue date Apr 3, 2001
- Hitachi, Ltd.
- Kazuo Nakazato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor memory device and manufacturing method thereof
- Patent number 6,169,308
- Issue date Jan 2, 2001
- Hitachi, Ltd.
- Hideo Sunami
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Controllable conduction device
- Patent number 6,060,723
- Issue date May 9, 2000
- Hitachi, Ltd.
- Kazuo Nakazato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of producing a thin film field effect transistor
- Patent number 5,273,919
- Issue date Dec 28, 1993
- Canon Kabushiki Kaisha
- Masafumi Sano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum well structures useful for semiconductor devices
- Patent number 5,216,262
- Issue date Jun 1, 1993
- Raphael Tsu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Passivated polycrystalline semiconductors quantum well/superlattice...
- Patent number 5,051,786
- Issue date Sep 24, 1991
- MCNC
- Edward H. Nicollian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film mesa transistor of field effect type with superlattice
- Patent number 4,916,510
- Issue date Apr 10, 1990
- Canon Kabushiki Kaisha
- Masafumi Sano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor
- Patent number 4,849,797
- Issue date Jul 18, 1989
- Hosiden Electronics Co., Ltd.
- Yasuhiro Ukai
- G02 - OPTICS
Information Patent Grant
Field effect transistor
- Patent number 4,799,087
- Issue date Jan 17, 1989
- Sanyo Electric Co., Ltd.
- Takao Matsuyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
PIN photodiode formed from an amorphous semiconductor
- Patent number 4,784,702
- Issue date Nov 15, 1988
- Thomson-CSF
- Yves Henri
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transistor having a superlattice
- Patent number 4,697,197
- Issue date Sep 29, 1987
- RCA Corp.
- Joseph Dresner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coupled heterostructure superlattice devices
- Patent number 4,665,412
- Issue date May 12, 1987
- GA Technologies Inc.
- Tihiro Ohkawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Proximity doping of amorphous semiconductors
- Patent number 4,642,144
- Issue date Feb 10, 1987
- Exxon Research and Engineering Company
- Thomas J. Tiedje
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING LOCALIZED SEMICONDUCTOR-ON-INSULATO...
- Publication number 20240371943
- Publication date Nov 7, 2024
- ATOMERA INCORPORATED
- DONGHUN KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE DRAIN FORMATION IN GATE ALL AROUND TRANSISTOR
- Publication number 20230067331
- Publication date Mar 2, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures
- Publication number 20230051827
- Publication date Feb 16, 2023
- UNIVERSITY OF LANCASTER
- Peter CARRINGTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING BOTTOM DIELECTRIC ISOLATION LAYERS
- Publication number 20230037719
- Publication date Feb 9, 2023
- Applied Materials, Inc.
- SanKuei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SUPERLATTICE STRUCTURES WITH REDUCED DEFECT DENSI...
- Publication number 20200411645
- Publication date Dec 31, 2020
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SUPERLATTICE STRUCTURES WITH REDUCED DEFECT DENSI...
- Publication number 20200075731
- Publication date Mar 5, 2020
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cascade Tunneling Field Effect Transistors
- Publication number 20190348536
- Publication date Nov 14, 2019
- Purdue Research Foundation
- Tillmann C. Kubis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE
- Publication number 20180337041
- Publication date Nov 22, 2018
- Rohm Co., Ltd.
- Shinya Takado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE
- Publication number 20180158678
- Publication date Jun 7, 2018
- Rohm Co., Ltd.
- Shinya Takado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Substrate Structures and Semiconductor Components
- Publication number 20180047813
- Publication date Feb 15, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND REPLACEMENT METAL...
- Publication number 20170301757
- Publication date Oct 19, 2017
- ATOMERA INCORPORATED
- ROBERT J. MEARS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE STRUCTURE, SEMICONDUCTOR COMPONENT AND METHOD
- Publication number 20170271454
- Publication date Sep 21, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR ELEMENT, AND MET...
- Publication number 20160247968
- Publication date Aug 25, 2016
- KABUSHIKI KAISHA TOSHIBA
- Kei KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE
- Publication number 20160155807
- Publication date Jun 2, 2016
- Rohm Co., Ltd.
- Shinya Takado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR ELEMENT, AND MET...
- Publication number 20140361345
- Publication date Dec 11, 2014
- KABUSHIKI KAISHA TOSHIBA
- Kei KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHOUS MULTI-COMPONENT METAL/METAL OXIDE NANOLAMINATE METAMATERI...
- Publication number 20140302310
- Publication date Oct 9, 2014
- The State of Oregon Acting by and Through the State Board of Higher Education...
- E. William Cowell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE
- Publication number 20120119219
- Publication date May 17, 2012
- Rohm Co., Ltd.
- Shinya Takado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A METAL-TO-SEMICONDUCTOR SUPERLATTIC...
- Publication number 20080179588
- Publication date Jul 31, 2008
- MEARS Technologies, Inc.
- Kalipatnam Vivek Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a semiconductor device including a superlattice w...
- Publication number 20050170590
- Publication date Aug 4, 2005
- RJ Mears, LLC.
- Robert J. Mears
- B82 - NANO-TECHNOLOGY
Information Patent Application
Controllable conduction device
- Publication number 20020139973
- Publication date Oct 3, 2002
- Hitachi, Ltd
- Kazuo Nakazato
- B82 - NANO-TECHNOLOGY

comprising at least one long range structurally disordered material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of forming bottom dielectric isolation layers

Method for making superlattice structures with reduced defect densi...

Method for making superlattice structures with reduced defect densi...

Cascade tunneling field effect transistors

Methods of forming substrate structures and semiconductor components

Semiconductor device including a superlattice and replacement metal...

Nitride semiconductor element and nitride semiconductor package

Nitride semiconductor element and nitride semiconductor package

Substrate structure, semiconductor component and method

Nitride semiconductor element and nitride semiconductor package

Nitride semiconductor wafer, nitride semiconductor element, and met...

Semiconductor device including a metal-to-semiconductor superlattic...

Method for making a semiconductor device including a superlattice w...

Controllable conduction device with electrostatic barrier

Controllable conduction device

Semiconductor memory device and manufacturing method thereof

Controllable conduction device

Method of producing a thin film field effect transistor

Quantum well structures useful for semiconductor devices

Passivated polycrystalline semiconductors quantum well/superlattice...

Thin film mesa transistor of field effect type with superlattice

Thin film transistor

Field effect transistor

PIN photodiode formed from an amorphous semiconductor

Transistor having a superlattice

Coupled heterostructure superlattice devices

Proximity doping of amorphous semiconductors

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES INCLUDING LOCALIZED SEMICONDUCTOR-ON-INSULATO...

SOURCE DRAIN FORMATION IN GATE ALL AROUND TRANSISTOR

Semiconductor Structures

METHODS OF FORMING BOTTOM DIELECTRIC ISOLATION LAYERS

METHOD FOR MAKING SUPERLATTICE STRUCTURES WITH REDUCED DEFECT DENSI...

METHOD FOR MAKING SUPERLATTICE STRUCTURES WITH REDUCED DEFECT DENSI...

Cascade Tunneling Field Effect Transistors

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE

Methods of Forming Substrate Structures and Semiconductor Components

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND REPLACEMENT METAL...

SUBSTRATE STRUCTURE, SEMICONDUCTOR COMPONENT AND METHOD

NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR ELEMENT, AND MET...

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE

NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR ELEMENT, AND MET...

AMORPHOUS MULTI-COMPONENT METAL/METAL OXIDE NANOLAMINATE METAMATERI...

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE

SEMICONDUCTOR DEVICE INCLUDING A METAL-TO-SEMICONDUCTOR SUPERLATTIC...

Method for making a semiconductor device including a superlattice w...

Controllable conduction device