comprising charge coupled devices [CCD] or charge injection devices [CID]

Industry

CPC
H01L27/1057

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/1057comprising charge coupled devices [CCD] or charge injection devices [CID]

Industries

Patents Grantslast 30 patents

Information Patent Grant
Voltage to current converter
- Patent number 10,386,874
- Issue date Aug 20, 2019
- Kabushiki Kaisha Toshiba
- Yuji Satoh
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Source-channel interaction in 3D circuit
- Patent number 9,299,767
- Issue date Mar 29, 2016
- Intel Corporation
- John Mark Meldrim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Matrix image sensor providing bidirectional charge transfer with as...
- Patent number 9,093,353
- Issue date Jul 28, 2015
- E2V Semiconductors
- Frederic Mayer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shift register memory
- Patent number 8,629,492
- Issue date Jan 14, 2014
- Kabushiki Kaisha Toshiba
- Yoshiaki Fukuzumi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device manufacturing method and semiconductor device
- Patent number 8,513,100
- Issue date Aug 20, 2013
- Fujitsu Semiconductor Limited
- Wensheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method and semiconductor device
- Patent number 8,102,022
- Issue date Jan 24, 2012
- Fujitsu Semiconductor Limited
- Wensheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of a semiconductor device to form ultrafine pat...
- Patent number 7,968,466
- Issue date Jun 28, 2011
- Fujitsu Semiconductor Limited
- Kenji Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state imaging device and method for fabricating the same
- Patent number 7,964,451
- Issue date Jun 21, 2011
- Panasonic Corporation
- Naoto Niisoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and manufacturing method thereof
- Patent number 7,935,996
- Issue date May 3, 2011
- Fujitsu Limited
- John D. Baniecki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor of the I-MOS type comprising two independent gates and m...
- Patent number 7,732,282
- Issue date Jun 8, 2010
- Commissariat a l'Energie Atomique
- Cyrille Le Royer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming a semiconductor device and a semiconductor device
- Patent number 6,518,070
- Issue date Feb 11, 2003
- Motorola, Inc.
- Prasad V. Alluri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device
- Patent number 6,344,413
- Issue date Feb 5, 2002
- Motorola Inc.
- Peter Zurcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming ferroelectric films using dual deposition steps
- Patent number 6,127,218
- Issue date Oct 3, 2000
- Samsung Electronics Co., Ltd.
- Chang-seok Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an integrated circuit having a charge coupl...
- Patent number 5,489,545
- Issue date Feb 6, 1996
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-coupled device having reduced cross-talk
- Patent number 5,369,293
- Issue date Nov 29, 1994
- U.S. Philips Corporation
- Arie Slob
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit having a charge coupled device and MOS transisto...
- Patent number 5,321,282
- Issue date Jun 14, 1994
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor integrated circuit device including...
- Patent number 5,288,651
- Issue date Feb 22, 1994
- Kabushiki Kaisha Toshiba
- Hiroyuki Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device having a charge transfer de...
- Patent number 5,260,228
- Issue date Nov 9, 1993
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having a charge transfer device, MOSFETs, and bipolar transi...
- Patent number 5,220,190
- Issue date Jun 15, 1993
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit and method of making the same
- Patent number 5,198,880
- Issue date Mar 30, 1993
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-coupled device and process of fabrication thereof
- Patent number 5,189,499
- Issue date Feb 23, 1993
- Sony Corporation
- Akio Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a charge transfer device, MOSFETs, and...
- Patent number 5,184,203
- Issue date Feb 2, 1993
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Input structure for charge coupled devices with controllable input...
- Patent number 5,029,189
- Issue date Jul 2, 1991
- Sony Corporation
- Maki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
High speed charge-coupled sampler and rate reduction circuit
- Patent number 5,015,876
- Issue date May 14, 1991
- Hewlett-Packard Company
- Knud L. Knudsen
- G11 - INFORMATION STORAGE
Information Patent Grant
Monolithic semiconductor device having CCD, bipolar and MOS structures
- Patent number 4,994,888
- Issue date Feb 19, 1991
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CCD read only memory
- Patent number 4,903,097
- Issue date Feb 20, 1990
- Hughes Aircraft Company
- Greg Nash
- G11 - INFORMATION STORAGE
Information Patent Grant
Compact charge-coupled device having a conductive shielding layer
- Patent number 4,881,250
- Issue date Nov 14, 1989
- U.S. Philips Corp.
- Geert J. T. Davids
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 4,807,005
- Issue date Feb 21, 1989
- U.S. Philips Corporation
- Leonard J. M. Esser
- G11 - INFORMATION STORAGE
Information Patent Grant
Analog image memory device using charge transfer
- Patent number 4,760,558
- Issue date Jul 26, 1988
- Thomson-CSF
- Jean L. Berger
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge transfer device
- Patent number 4,691,218
- Issue date Sep 1, 1987
- U.S. Philips Corporation
- Arnoldus J. J. Boudewijns
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
VOLTAGE TO CURRENT CONVERTER
- Publication number 20190324482
- Publication date Oct 24, 2019
- Kabushiki Kaisha Toshiba
- Yuji Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE TO CURRENT CONVERTER
- Publication number 20170262005
- Publication date Sep 14, 2017
- Kabushiki Kaisha Toshiba
- Yuji Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE-CHANNEL INTERACTION IN 3D CIRCUIT
- Publication number 20160093688
- Publication date Mar 31, 2016
- John Mark Meldrim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIFT REGISTER MEMORY
- Publication number 20130075918
- Publication date Mar 28, 2013
- Kabushiki Kaisha Toshiba
- Yoshiaki FUKUZUMI
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20120094398
- Publication date Apr 19, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Wensheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20100078762
- Publication date Apr 1, 2010
- Fujitsu Microelectronics Limited
- Wensheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20090194795
- Publication date Aug 6, 2009
- Naoto Niisoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor of the I-MOS Type Comprising Two Independent Gates and M...
- Publication number 20090096028
- Publication date Apr 16, 2009
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Cyrille Le Royer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE
- Publication number 20080124933
- Publication date May 29, 2008
- Fujitsu Limited
- Kenji Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20080048292
- Publication date Feb 28, 2008
- Fujitsu Limited
- John D. Baniecki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating ferroelectric random access memory device ha...
- Publication number 20040266030
- Publication date Dec 30, 2004
- Soon-Yong Kweon
- H01 - BASIC ELECTRIC ELEMENTS

comprising charge coupled devices [CCD] or charge injection devices [CID]

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Voltage to current converter

Source-channel interaction in 3D circuit

Matrix image sensor providing bidirectional charge transfer with as...

Shift register memory

Semiconductor device manufacturing method and semiconductor device

Semiconductor device manufacturing method and semiconductor device

Fabrication process of a semiconductor device to form ultrafine pat...

Solid state imaging device and method for fabricating the same

Electronic device and manufacturing method thereof

Transistor of the I-MOS type comprising two independent gates and m...

Process of forming a semiconductor device and a semiconductor device

Method for forming a semiconductor device

Methods for forming ferroelectric films using dual deposition steps

Method of manufacturing an integrated circuit having a charge coupl...

Charge-coupled device having reduced cross-talk

Integrated circuit having a charge coupled device and MOS transisto...

Method of making semiconductor integrated circuit device including...

Method of making a semiconductor device having a charge transfer de...

Device having a charge transfer device, MOSFETs, and bipolar transi...

Semiconductor integrated circuit and method of making the same

Charge-coupled device and process of fabrication thereof

Semiconductor device having a charge transfer device, MOSFETs, and...

Input structure for charge coupled devices with controllable input...

High speed charge-coupled sampler and rate reduction circuit

Monolithic semiconductor device having CCD, bipolar and MOS structures

CCD read only memory

Compact charge-coupled device having a conductive shielding layer

Semiconductor device

Analog image memory device using charge transfer

Charge transfer device

Patents Applicationslast 30 patents

VOLTAGE TO CURRENT CONVERTER

VOLTAGE TO CURRENT CONVERTER

SOURCE-CHANNEL INTERACTION IN 3D CIRCUIT

SHIFT REGISTER MEMORY

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

SOLID STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME

Transistor of the I-MOS Type Comprising Two Independent Gates and M...

FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE

ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF

Method for fabricating ferroelectric random access memory device ha...