comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]

Industry

CPC
G11C13/0011

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00

Current Industry

G11C13/0011comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Hybrid resistive memory
- Patent number 12,170,109
- Issue date Dec 17, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Elisa Vianello
- G11 - INFORMATION STORAGE
Information Patent Grant
Crested barrier device and synaptic element
- Patent number 12,141,688
- Issue date Nov 12, 2024
- Applied Materials, Inc.
- Milan Pesic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Intercalated metal/dielectric structure for nonvolatile memory devices
- Patent number 12,137,621
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory and method for operating same
- Patent number 12,133,477
- Issue date Oct 29, 2024
- Hefei Reliance Memory Limited
- Zezhi Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
RRAM memory cell with multiple filaments
- Patent number 12,075,634
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chin-Chieh Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and manufacturing method therefor
- Patent number 12,010,929
- Issue date Jun 11, 2024
- Industry-University Cooperation Foundation Hanyang University Erica Campus
- Tae Joo Park
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Programmable interposers for electrically connecting integrated cir...
- Patent number 11,984,157
- Issue date May 14, 2024
- Arizona Board of Regents on behalf of Arizona State University
- Michael Kozicki
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for accessing resistive change elements operable as antifuses
- Patent number 11,972,830
- Issue date Apr 30, 2024
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,963,465
- Issue date Apr 16, 2024
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for dynamically reconfigurable artificial synap...
- Patent number 11,930,723
- Issue date Mar 12, 2024
- National Technology & Engineering Solutions of Sandia, LLC
- Albert Alec Talin
- G11 - INFORMATION STORAGE
Information Patent Grant
Differential ionic electronic transistors
- Patent number 11,925,128
- Issue date Mar 5, 2024
- Robert Bosch GmbH
- Lei Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Generating self-aligned heater for PCRAM using filaments
- Patent number 11,910,733
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chih Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Thin films printed with chalcogenide glass inks
- Patent number 11,845,870
- Issue date Dec 19, 2023
- Boise State University
- Maria Mitkova
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Electrical distance-based wave shaping for a memory device
- Patent number 11,837,286
- Issue date Dec 5, 2023
- Micron Technology, Inc.
- John Christopher Sancon
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit for sensing antifuse of DRAMs
- Patent number 11,830,540
- Issue date Nov 28, 2023
- NANYA TECHNOLOGY CORPORATION
- Chih-Jen Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory systems and memory programming methods
- Patent number 11,817,147
- Issue date Nov 14, 2023
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory with conductive bridge filament
- Patent number 11,805,714
- Issue date Oct 31, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing thermal dispersion layer in programmable m...
- Patent number 11,800,823
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Trench formation scheme for programmable metallization cell to prev...
- Patent number 11,785,786
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Ting Sung
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector device for two-terminal memory
- Patent number 11,776,626
- Issue date Oct 3, 2023
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Energy recovery in filamentary resistive memories
- Patent number 11,763,884
- Issue date Sep 19, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Paola Trotti
- G11 - INFORMATION STORAGE
Information Patent Grant
RRAM memory cell with multiple filaments
- Patent number 11,737,290
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chin-Chieh Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Intercalated metal/dielectric structure for nonvolatile memory devices
- Patent number 11,723,291
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,653,580
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductive bridging random access memory formed using selective bar...
- Patent number 11,647,639
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling voltage resistance through metal-oxide device
- Patent number 11,615,843
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Bert Jan Offrein
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Two-terminal non-volatile memory cell for decoupled read and write...
- Patent number 11,568,927
- Issue date Jan 31, 2023
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to tolerate programming and retention errors of crossbar me...
- Patent number 11,556,616
- Issue date Jan 17, 2023
- SanDisk Technologies LLC
- Minghai Qin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
PUF with dissolvable conductive paths
- Patent number 11,552,810
- Issue date Jan 10, 2023
- Arizona Board of Regents on Behalf of Northern Arizona University
- Bertrand Francis Cambou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Synapse and synaptic array, and computing system using the same and...
- Patent number 11,521,678
- Issue date Dec 6, 2022
- Kookmin University Industry Academy Cooperation Foundation
- Donguk Kim
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PROGRAMMABLE INTERPOSERS FOR ELECTRICALLY CONNECTING INTEGRATED CIR...
- Publication number 20240404592
- Publication date Dec 5, 2024
- Michael Kozicki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES
- Publication number 20240381795
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mauricio Manfrini
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING
- Publication number 20240224821
- Publication date Jul 4, 2024
- Hefei Reliance Memory Limited
- Zhichao LU
- G11 - INFORMATION STORAGE
Information Patent Application
Generating Self-Aligned Heater for PCRAM Using Filaments
- Publication number 20240188453
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Chih Lai
- G11 - INFORMATION STORAGE
Information Patent Application
THERMAL DISPERSION LAYER IN PROGRAMMABLE METALLIZATION CELL
- Publication number 20240023464
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...
- Publication number 20230380188
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Ting Sung
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM MEMORY CELL WITH MULTIPLE FILAMENTS
- Publication number 20230354618
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Chieh Yang
- G11 - INFORMATION STORAGE
Information Patent Application
INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES
- Publication number 20230337557
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mauricio Manfrini
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20230253039
- Publication date Aug 10, 2023
- Macronix International Co., Ltd.
- Yu-Yu LIN
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING
- Publication number 20230225227
- Publication date Jul 13, 2023
- Hefei Reliance Memory Limited
- Zhichao LU
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE
- Publication number 20230180641
- Publication date Jun 8, 2023
- Korea University Research and Business Foundation
- Zhe WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL DISTANCE-BASED WAVE SHAPING FOR A MEMORY DEVICE
- Publication number 20230111770
- Publication date Apr 13, 2023
- Micron Technology, Inc.
- John Christopher Sancon
- G11 - INFORMATION STORAGE
Information Patent Application
Electronic Circuit and Method of Operating an Electronic Circuit
- Publication number 20230104213
- Publication date Apr 6, 2023
- Marcus Janke
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE SWITCHING MEMORY DEVICE INCLUDING DUAL ACTIVE LAYER, MANU...
- Publication number 20230097791
- Publication date Mar 30, 2023
- RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Hyung Koun CHO
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APP...
- Publication number 20230079071
- Publication date Mar 16, 2023
- Kabushiki Kaisha Toshiba
- Takao MARUKAME
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR OPERATING SAME
- Publication number 20230028701
- Publication date Jan 26, 2023
- Hefei Reliance Memory Limited
- Zezhi CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Generating Self-Aligned Heater for PCRAM Using Filaments
- Publication number 20220367795
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Chih Lai
- G11 - INFORMATION STORAGE
Information Patent Application
Methods for Accessing Resistive Change Elements Operable as Antifuses
- Publication number 20220358970
- Publication date Nov 10, 2022
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL NON-VOLATILE MEMORY CELL FOR DECOUPLED READ AND WRITE...
- Publication number 20220319588
- Publication date Oct 6, 2022
- International Business Machines Corporation
- John Rozen
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MANUFACTURING A CONDUCTIVE BRIDGING MEMORY DEVICE
- Publication number 20220302386
- Publication date Sep 22, 2022
- National Yang Ming Chiao Tung University
- Po-Tsun LIU
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE AND STORAGE UNIT
- Publication number 20220293855
- Publication date Sep 15, 2022
- Sony Semiconductor Solutions Corporation
- Tetsuya MIZUGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...
- Publication number 20220278170
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Ting Sung
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY FORMED USING SELECTIVE BAR...
- Publication number 20220271092
- Publication date Aug 25, 2022
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE INTERPOSERS FOR ELECTRICALLY CONNECTING INTEGRATED CIR...
- Publication number 20220262433
- Publication date Aug 18, 2022
- Michael Kozicki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING VOLTAGE RESISTANCE THROUGH METAL-OXIDE DEVICE
- Publication number 20220199158
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Bert Jan Offrein
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY-BASED VECTOR-MATRIX MULTIPLICATION
- Publication number 20220156345
- Publication date May 19, 2022
- Adesto Technologies Corporation
- John R. Jameson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DRIFT AND NOISE CORRECTED MEMRISTIVE DEVICE
- Publication number 20220148655
- Publication date May 12, 2022
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID RESISTIVE MEMORY
- Publication number 20220148653
- Publication date May 12, 2022
- Commissariat a I'Energie Atomique et aux Energies Alternatives
- Elisa VIANELLO
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM MEMORY CELL WITH MULTIPLE FILAMENTS
- Publication number 20220093687
- Publication date Mar 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Chieh Yang
- G11 - INFORMATION STORAGE
Information Patent Application
SYNAPSE AND SYNAPTIC ARRAY, AND COMPUTING SYSTEM USING THE SAME AND...
- Publication number 20220068379
- Publication date Mar 3, 2022
- Kookmin University Industry Academy Cooperation Foundation
- Donguk KIM
- G11 - INFORMATION STORAGE

comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Hybrid resistive memory

Crested barrier device and synaptic element

Intercalated metal/dielectric structure for nonvolatile memory devices

Resistive random access memory and method for operating same

RRAM memory cell with multiple filaments

Memory device and manufacturing method therefor

Programmable interposers for electrically connecting integrated cir...

Methods for accessing resistive change elements operable as antifuses

Non-volatile memory structure with positioned doping

Systems and methods for dynamically reconfigurable artificial synap...

Differential ionic electronic transistors

Generating self-aligned heater for PCRAM using filaments

Thin films printed with chalcogenide glass inks

Electrical distance-based wave shaping for a memory device

Circuit for sensing antifuse of DRAMs

Memory systems and memory programming methods

Phase change memory with conductive bridge filament

Method for manufacturing thermal dispersion layer in programmable m...

Trench formation scheme for programmable metallization cell to prev...

Selector device for two-terminal memory

Energy recovery in filamentary resistive memories

RRAM memory cell with multiple filaments

Intercalated metal/dielectric structure for nonvolatile memory devices

Non-volatile memory structure with positioned doping

Conductive bridging random access memory formed using selective bar...

Controlling voltage resistance through metal-oxide device

Two-terminal non-volatile memory cell for decoupled read and write...

Methods to tolerate programming and retention errors of crossbar me...

PUF with dissolvable conductive paths

Synapse and synaptic array, and computing system using the same and...

Patents Applicationslast 30 patents

PROGRAMMABLE INTERPOSERS FOR ELECTRICALLY CONNECTING INTEGRATED CIR...

INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES

NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING

Generating Self-Aligned Heater for PCRAM Using Filaments

THERMAL DISPERSION LAYER IN PROGRAMMABLE METALLIZATION CELL

TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...

RRAM MEMORY CELL WITH MULTIPLE FILAMENTS

INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES

MEMORY DEVICE AND METHOD FOR OPERATING THE SAME

NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING

VARIABLE RESISTANCE MEMORY DEVICE

ELECTRICAL DISTANCE-BASED WAVE SHAPING FOR A MEMORY DEVICE

Electronic Circuit and Method of Operating an Electronic Circuit

RESISTIVE SWITCHING MEMORY DEVICE INCLUDING DUAL ACTIVE LAYER, MANU...

VARIABLE RESISTANCE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APP...

RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR OPERATING SAME

Generating Self-Aligned Heater for PCRAM Using Filaments

Methods for Accessing Resistive Change Elements Operable as Antifuses

TWO-TERMINAL NON-VOLATILE MEMORY CELL FOR DECOUPLED READ AND WRITE...

METHOD FOR MANUFACTURING A CONDUCTIVE BRIDGING MEMORY DEVICE

STORAGE DEVICE AND STORAGE UNIT

TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...

CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY FORMED USING SELECTIVE BAR...

PROGRAMMABLE INTERPOSERS FOR ELECTRICALLY CONNECTING INTEGRATED CIR...

CONTROLLING VOLTAGE RESISTANCE THROUGH METAL-OXIDE DEVICE

MEMORY-BASED VECTOR-MATRIX MULTIPLICATION

DRIFT AND NOISE CORRECTED MEMRISTIVE DEVICE

HYBRID RESISTIVE MEMORY

RRAM MEMORY CELL WITH MULTIPLE FILAMENTS

SYNAPSE AND SYNAPTIC ARRAY, AND COMPUTING SYSTEM USING THE SAME AND...