comprising lattice mismatched active layers

Industry

CPC
H01L29/7378

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7378comprising lattice mismatched active layers

Industries

Patents Grantslast 30 patents

Information Patent Grant
III-N based material structures, methods, devices and circuit modul...
- Patent number 12,230,678
- Issue date Feb 18, 2025
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacture of advanced wafer bonded heterojunction bipo...
- Patent number 12,183,812
- Issue date Dec 31, 2024
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Base silicide on monocrystalline base structures
- Patent number 12,132,093
- Issue date Oct 29, 2024
- NXP USA, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with extrinsic base region and method of fabri...
- Patent number 12,107,143
- Issue date Oct 1, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor (BJT) comprising a multilayer base diel...
- Patent number 11,710,783
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Tsung Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off HEMT transistor with selective generation of 2DEG chan...
- Patent number 11,699,748
- Issue date Jul 11, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high mobility complementary metal-oxide-semicondu...
- Patent number 11,637,041
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar-transistor device and corresponding fabrication process
- Patent number 11,621,324
- Issue date Apr 4, 2023
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating multijunction solar cells for space applications
- Patent number 11,563,133
- Issue date Jan 24, 2023
- SolAero Techologies Corp.
- Daniel Derkacs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,532,736
- Issue date Dec 20, 2022
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple strain states in epitaxial transistor channel through the...
- Patent number 11,495,683
- Issue date Nov 8, 2022
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor de...
- Patent number 11,456,374
- Issue date Sep 27, 2022
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having tipless epitaxial source/drain regions
- Patent number 11,437,514
- Issue date Sep 6, 2022
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NPN heterojunction bipolar transistor in CMOS flow
- Patent number 11,417,646
- Issue date Aug 16, 2022
- Texas Instruments Incorporated
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Virtual bulk in semiconductor on insulator technology
- Patent number 11,374,092
- Issue date Jun 28, 2022
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained and unstrained semiconductor device features formed on the...
- Patent number 11,355,588
- Issue date Jun 7, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced wafer bonded heterojunction bipolar transistors and method...
- Patent number 11,335,794
- Issue date May 17, 2022
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer bonded GaN monolithic integrated circuits and methods of manu...
- Patent number 11,239,348
- Issue date Feb 1, 2022
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor (BJT) comprising a multilayer base diel...
- Patent number 11,183,587
- Issue date Nov 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Tsung Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with one or more sealed airgap
- Patent number 11,127,816
- Issue date Sep 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary transistor structures formed with the assistance of d...
- Patent number 11,063,140
- Issue date Jul 13, 2021
- GLOBALFOUNDRIES U.S. INC.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar-transistor device and corresponding fabrication process
- Patent number 11,038,017
- Issue date Jun 15, 2021
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off HEMT transistor with selective generation of 2DEG chan...
- Patent number 11,038,047
- Issue date Jun 15, 2021
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with counter-doped collector regi...
- Patent number 10,998,431
- Issue date May 4, 2021
- STMicroelectronics (Crolles 2) SAS
- Pascal Chevalier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,978,579
- Issue date Apr 13, 2021
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility complementary metal-oxide-semiconductor (CMOS) device...
- Patent number 10,971,522
- Issue date Apr 6, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having tipless epitaxial source/drain regions
- Patent number 10,770,587
- Issue date Sep 8, 2020
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor (BJT) with 3D wrap around emitter
- Patent number 10,734,490
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon controlled rectifiers integrated into a heterojunction bipo...
- Patent number 10,727,327
- Issue date Jul 28, 2020
- GLOBALFOUNDRIES Inc.
- Rahul Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multijunction solar cells on bulk GeSi substrate
- Patent number 10,707,366
- Issue date Jul 7, 2020
- SolAero Technologies Corp.
- John Hart
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETEROGENEOUS HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES AND METHODS...
- Publication number 20240322002
- Publication date Sep 26, 2024
- North Carolina State University
- Spyridon Pavlidis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE HBT AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240304707
- Publication date Sep 12, 2024
- NXP B.V.
- Johannes Josephus Theodorus Marinus Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH A CUT STRESS LINER
- Publication number 20240170561
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRI...
- Publication number 20240030308
- Publication date Jan 25, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BASE SILICIDE ON MONOCRYSTALLINE BASE STRUCTURES
- Publication number 20230395692
- Publication date Dec 7, 2023
- NXP USA, Inc.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Silicon-Tin (GeSiSn) Heterojunction Bipolar Transistor De...
- Publication number 20230031642
- Publication date Feb 2, 2023
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS
- Publication number 20220359753
- Publication date Nov 10, 2022
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURE OF ADVANCED WAFER BONDED HETEROJUNCTION BIPO...
- Publication number 20220278228
- Publication date Sep 1, 2022
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR (BJT) COMPRISING A MULTILAYER BASE DIEL...
- Publication number 20220077305
- Publication date Mar 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Tsung Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N BASED MATERIAL STRUCTURES, METHODS, DEVICES AND CIRCUIT MODUL...
- Publication number 20210399096
- Publication date Dec 23, 2021
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A GATE-ALL-AROUND (GAA) TRANSISTOR WITH A SILICON GERMA...
- Publication number 20210398972
- Publication date Dec 23, 2021
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR-TRANSISTOR DEVICE AND CORRESPONDING FABRICATION PROCESS
- Publication number 20210273052
- Publication date Sep 2, 2021
- STMicroelectronics (Crolles 2) SAS
- Alexis GAUTHIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF HEMT TRANSISTOR WITH SELECTIVE GENERATION OF 2DEG CHAN...
- Publication number 20210273087
- Publication date Sep 2, 2021
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH ONE OR MORE SEALED AIRGAP
- Publication number 20210257454
- Publication date Aug 19, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210184022
- Publication date Jun 17, 2021
- Murata Manufacturing Co., Ltd.
- Yasunari UMEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR (BJT) COMPRISING A MULTILAYER BASE DIEL...
- Publication number 20210134988
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Chun-Tsung Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH MOBILITY COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICE...
- Publication number 20210111195
- Publication date Apr 15, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY TRANSISTOR STRUCTURES FORMED WITH THE ASSISTANCE OF D...
- Publication number 20210098612
- Publication date Apr 1, 2021
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIRTUAL BULK IN SEMICONDUCTOR ON INSULATOR TECHNOLOGY
- Publication number 20210091180
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES INC.
- John J. PEKARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS
- Publication number 20200335626
- Publication date Oct 22, 2020
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED AND UNSTRAINED SEMICONDUCTOR DEVICE FEATURES FORMED ON THE...
- Publication number 20200212181
- Publication date Jul 2, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF HEMT TRANSISTOR WITH SELECTIVE GENERATION OF 2DEG CHAN...
- Publication number 20200152779
- Publication date May 14, 2020
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADVANCED WAFER BONDED HETEROJUNCTION BIPOLAR TRANSISTORS AND METHOD...
- Publication number 20200119172
- Publication date Apr 16, 2020
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A BIPOLAR TRANSISTOR HAVING A COLLECTOR WITH A D...
- Publication number 20190386123
- Publication date Dec 19, 2019
- SKYWORKS SOLUTIONS, INC.
- Peter J. Zampardi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190333887
- Publication date Oct 31, 2019
- Murata Manufacturing Co., Ltd.
- Yasunari UMEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED RF FRONT END SYSTEM
- Publication number 20190319093
- Publication date Oct 17, 2019
- SKYWORKS SOLUTIONS, INC.
- Michael Joseph McPartlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacture of Germanium-Silicon-Tin Heterojunction Bipol...
- Publication number 20190296131
- Publication date Sep 26, 2019
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CASCODE HETEROJUNCTION BIPOLAR TRANSISTORS
- Publication number 20190252530
- Publication date Aug 15, 2019
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER BONDED GAN MONOLITHIC INTEGRATED CIRCUITS AND METHODS OF MANU...
- Publication number 20190115459
- Publication date Apr 18, 2019
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CASCODE HETEROJUNCTION BIPOLAR TRANSISTORS
- Publication number 20190035919
- Publication date Jan 31, 2019
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS

comprising lattice mismatched active layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

III-N based material structures, methods, devices and circuit modul...

Methods of manufacture of advanced wafer bonded heterojunction bipo...

Base silicide on monocrystalline base structures

Semiconductor device with extrinsic base region and method of fabri...

Bipolar junction transistor (BJT) comprising a multilayer base diel...

Normally-off HEMT transistor with selective generation of 2DEG chan...

Method of forming high mobility complementary metal-oxide-semicondu...

Bipolar-transistor device and corresponding fabrication process

Method of fabricating multijunction solar cells for space applications

Semiconductor device

Multiple strain states in epitaxial transistor channel through the...

Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor de...

Semiconductor device having tipless epitaxial source/drain regions

NPN heterojunction bipolar transistor in CMOS flow

Virtual bulk in semiconductor on insulator technology

Strained and unstrained semiconductor device features formed on the...

Advanced wafer bonded heterojunction bipolar transistors and method...

Wafer bonded GaN monolithic integrated circuits and methods of manu...

Bipolar junction transistor (BJT) comprising a multilayer base diel...

Heterojunction bipolar transistors with one or more sealed airgap

Complementary transistor structures formed with the assistance of d...

Bipolar-transistor device and corresponding fabrication process

Normally-off HEMT transistor with selective generation of 2DEG chan...

Heterojunction bipolar transistor with counter-doped collector regi...

Semiconductor device

High mobility complementary metal-oxide-semiconductor (CMOS) device...

Semiconductor device having tipless epitaxial source/drain regions

Bipolar junction transistor (BJT) with 3D wrap around emitter

Silicon controlled rectifiers integrated into a heterojunction bipo...

Multijunction solar cells on bulk GeSi substrate

Patents Applicationslast 30 patents

HETEROGENEOUS HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES AND METHODS...

SIGE HBT AND METHODS OF MANUFACTURING THE SAME

HETEROJUNCTION BIPOLAR TRANSISTORS WITH A CUT STRESS LINER

SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRI...

BASE SILICIDE ON MONOCRYSTALLINE BASE STRUCTURES

Germanium-Silicon-Tin (GeSiSn) Heterojunction Bipolar Transistor De...

SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS

METHODS OF MANUFACTURE OF ADVANCED WAFER BONDED HETEROJUNCTION BIPO...

BIPOLAR JUNCTION TRANSISTOR (BJT) COMPRISING A MULTILAYER BASE DIEL...

III-N BASED MATERIAL STRUCTURES, METHODS, DEVICES AND CIRCUIT MODUL...

INTEGRATING A GATE-ALL-AROUND (GAA) TRANSISTOR WITH A SILICON GERMA...

BIPOLAR-TRANSISTOR DEVICE AND CORRESPONDING FABRICATION PROCESS

NORMALLY-OFF HEMT TRANSISTOR WITH SELECTIVE GENERATION OF 2DEG CHAN...

HETEROJUNCTION BIPOLAR TRANSISTORS WITH ONE OR MORE SEALED AIRGAP

SEMICONDUCTOR DEVICE

BIPOLAR JUNCTION TRANSISTOR (BJT) COMPRISING A MULTILAYER BASE DIEL...

HIGH MOBILITY COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICE...

COMPLEMENTARY TRANSISTOR STRUCTURES FORMED WITH THE ASSISTANCE OF D...

VIRTUAL BULK IN SEMICONDUCTOR ON INSULATOR TECHNOLOGY

SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS

STRAINED AND UNSTRAINED SEMICONDUCTOR DEVICE FEATURES FORMED ON THE...

NORMALLY-OFF HEMT TRANSISTOR WITH SELECTIVE GENERATION OF 2DEG CHAN...

ADVANCED WAFER BONDED HETEROJUNCTION BIPOLAR TRANSISTORS AND METHOD...

METHODS OF FORMING A BIPOLAR TRANSISTOR HAVING A COLLECTOR WITH A D...

SEMICONDUCTOR DEVICE

INTEGRATED RF FRONT END SYSTEM

Method of Manufacture of Germanium-Silicon-Tin Heterojunction Bipol...

CASCODE HETEROJUNCTION BIPOLAR TRANSISTORS

WAFER BONDED GAN MONOLITHIC INTEGRATED CIRCUITS AND METHODS OF MANU...

CASCODE HETEROJUNCTION BIPOLAR TRANSISTORS