comprising multi-terminal components

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/226comprising multi-terminal components

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,683,988
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of integration of a magnetoresistive structure
- Patent number 11,631,806
- Issue date Apr 18, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Kerry Joseph Nagel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antiferromagnet based spin orbit torque memory device
- Patent number 11,621,391
- Issue date Apr 4, 2023
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices with a transition metal dopant at an interf...
- Patent number 11,616,192
- Issue date Mar 28, 2023
- Intel Corporation
- Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
Bottom-pinned magnetic random access memory having a composite SOT...
- Patent number 11,600,660
- Issue date Mar 7, 2023
- Rongfu Xiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Data storage devices including a first top electrode and a differen...
- Patent number 11,600,662
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Junghwan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory
- Patent number 11,569,295
- Issue date Jan 31, 2023
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,569,294
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element, memory apparatus
- Patent number RE49364
- Issue date Jan 10, 2023
- Sony Corporation
- Hiroyuki Uchida
Information Patent Grant
Method for forming semiconductor memory structure
- Patent number 11,532,339
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jui-Fen Chien
- G11 - INFORMATION STORAGE
Information Patent Grant
Ultra-fast magnetic random access memory having a composite SOT-MTJ...
- Patent number 11,527,708
- Issue date Dec 13, 2022
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic domain wall drift for an artificial leaky integrate-and-fi...
- Patent number 11,514,301
- Issue date Nov 29, 2022
- Board of Regents, The University of Texas System
- Joseph S. Friedman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
SOT MRAM cell and array comprising a plurality of SOT MRAM cells
- Patent number 11,514,963
- Issue date Nov 29, 2022
- ANTAIOS
- Marc Drouard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic junction memory device and reading method thereof
- Patent number 11,515,357
- Issue date Nov 29, 2022
- Samsung Electronics Co., Ltd.
- Chan Kyung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing semiconductor device and semiconductor device
- Patent number 11,502,044
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ying-Hua Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including blocking layer
- Patent number 11,495,736
- Issue date Nov 8, 2022
- Samsung Electronics Co., Ltd.
- Kyungil Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene-based approaches for embedding spin hall MTJ devices into...
- Patent number 11,469,268
- Issue date Oct 11, 2022
- Intel Corporation
- Kevin J. Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 11,456,332
- Issue date Sep 27, 2022
- Samsung Electronics Co., Ltd.
- Ung Hwan Pi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating magnetic tunneling junction element with a c...
- Patent number 11,456,411
- Issue date Sep 27, 2022
- HeFeChip Corporation Limited
- Qinli Ma
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device and electronic device
- Patent number 11,417,704
- Issue date Aug 16, 2022
- Semiconductor Energy Laboratory Co., Ltd.
- Hajime Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device and manufacturing method thereof
- Patent number 11,410,714
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zong-You Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory with magnetic tunnel junction cells
- Patent number 11,404,424
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Ping-Wei Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array having connections going through control gates
- Patent number 11,398,489
- Issue date Jul 26, 2022
- Micron Technology, Inc.
- Toru Tanzawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) integration on backside of silicon
- Patent number 11,398,596
- Issue date Jul 26, 2022
- Intel Corporation
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approaches for embedding spin hall MTJ devices into a logic process...
- Patent number 11,393,873
- Issue date Jul 19, 2022
- Intel Corporation
- Kevin J. Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic of forming magnetic tunnel junction device using protectiv...
- Patent number 11,387,406
- Issue date Jul 12, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin orbit torque (SOT) memory device with self-aligned contacts an...
- Patent number 11,348,970
- Issue date May 31, 2022
- Intel Corporation
- Kevin O'Brien
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayered seed for perpendicular magnetic structure
- Patent number 11,348,971
- Issue date May 31, 2022
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having bitline segmented into bitline segments and re...
- Patent number 11,322,188
- Issue date May 3, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shih-Lien Linus Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory device and method of manufact...
- Patent number 11,223,009
- Issue date Jan 11, 2022
- Samsung Electronics Co., Ltd.
- Baeseong Kwon
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTIVE RANDOM-ACCESS MEMORY STRUCTURE
- Publication number 20230345841
- Publication date Oct 26, 2023
- International Business Machines Corporation
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFERROIC TUNNEL JUNCTION MEMORY DEVICE AND RELATED METHODS
- Publication number 20230240152
- Publication date Jul 27, 2023
- Eagle Technology , LLC
- MATT BAUER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY
- Publication number 20230232638
- Publication date Jul 20, 2023
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
PILLAR MEMORY TOP CONTACT LANDING
- Publication number 20230189656
- Publication date Jun 15, 2023
- International Business Machines Corporation
- SABA ZARE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230180620
- Publication date Jun 8, 2023
- SK HYNIX INC.
- Ku Youl JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT AND PROCESSING METHOD THEREOF, STORAGE MEDIUM, AND PROGRAM P...
- Publication number 20230172072
- Publication date Jun 1, 2023
- Changxin Memory Technologies, Inc.
- Xiaoguang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CROSSBAR-COMPATIBLE ELECTROCHEMICAL MEMORY STRUCTURE
- Publication number 20230165015
- Publication date May 25, 2023
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20230135847
- Publication date May 4, 2023
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20230110711
- Publication date Apr 13, 2023
- Samsung Electronics Co., Ltd.
- Rahul MISHRA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND ELECTRONIC DEVICE
- Publication number 20230106065
- Publication date Apr 6, 2023
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Tatsuya ONUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL LAYER TOP CONTACT FOR MAGNETIC TUNNEL JUNCTION STACK
- Publication number 20230098576
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNELING MAGNETORESISTIVE (TMR) DEVICE WITH IMPROVED SEED LAYER
- Publication number 20230084970
- Publication date Mar 16, 2023
- Western Digital Technologies, Inc.
- Susumu Okamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230069841
- Publication date Mar 9, 2023
- KIOXIA Corporation
- Yoshiaki ASAO
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE AND SPIN-TRANSFER TORQUE MAGNETORESISTIVE RANDOM-...
- Publication number 20230064289
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC JUNCTION MEMORY DEVICE AND READING METHOD THEREOF
- Publication number 20230051494
- Publication date Feb 16, 2023
- Samsung Electronics Co., Ltd.
- Chan Kyung KIM
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY
- Publication number 20230046923
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Eric Raymond Evarts
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE DEVICES AND METHODS THEREFOR
- Publication number 20230047005
- Publication date Feb 16, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH INTEGR...
- Publication number 20230050152
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY
- Publication number 20230040768
- Publication date Feb 9, 2023
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-TEMPERATURE THREE-DIMENSIONAL HALL SENSOR WITH REAL-TIME WORKI...
- Publication number 20220413068
- Publication date Dec 29, 2022
- DALIAN UNIVERSITY OF TECHNOLOGY
- Huolin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC DOMAIN WALL MOVEMENT ELEMENT AND MAGNETIC ARRAY
- Publication number 20220399487
- Publication date Dec 15, 2022
- TDK Corporation
- Shogo YAMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
- Publication number 20220384522
- Publication date Dec 1, 2022
- Semiconductor Energy Laboratory Co., Ltd.
- Hajime KIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING SEMI...
- Publication number 20220367566
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220358980
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zong-You LUO
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TRANSISTOR ONE MAGNETIC TUNNEL JUNCTION MULTIPLE BIT MAGNETORES...
- Publication number 20220359611
- Publication date Nov 10, 2022
- QUALCOMM Incorporated
- Xia LI
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction Device
- Publication number 20220336727
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES
- Publication number 20220336734
- Publication date Oct 20, 2022
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev AGGARWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE GENERATING OPTIMAL WRITE VOLTAGE BASED ON SIZE OF MEM...
- Publication number 20220336000
- Publication date Oct 20, 2022
- Samsung Electronics Co., Ltd.
- DAESHIK KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC RANDOM ACCESS MEMORY WITH MAGNETIC TUNNEL JUNCTION CELLS
- Publication number 20220328498
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Ping-Wei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20220302370
- Publication date Sep 22, 2022
- KIOXIA Corporation
- Nobuyuki UMETSU
- G11 - INFORMATION STORAGE

comprising multi-terminal components

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Method of integration of a magnetoresistive structure

Antiferromagnet based spin orbit torque memory device

Magnetic memory devices with a transition metal dopant at an interf...

Bottom-pinned magnetic random access memory having a composite SOT...

Data storage devices including a first top electrode and a differen...

Magnetoresistive random access memory

Semiconductor device and manufacturing method thereof

Memory element, memory apparatus

Method for forming semiconductor memory structure

Ultra-fast magnetic random access memory having a composite SOT-MTJ...

Magnetic domain wall drift for an artificial leaky integrate-and-fi...

SOT MRAM cell and array comprising a plurality of SOT MRAM cells

Magnetic junction memory device and reading method thereof

Methods of manufacturing semiconductor device and semiconductor device

Semiconductor device including blocking layer

Damascene-based approaches for embedding spin hall MTJ devices into...

Magnetic memory device

Method for fabricating magnetic tunneling junction element with a c...

Semiconductor device and electronic device

Magnetoresistive memory device and manufacturing method thereof

Static random access memory with magnetic tunnel junction cells

Memory array having connections going through control gates

Magnetic tunnel junction (MTJ) integration on backside of silicon

Approaches for embedding spin hall MTJ devices into a logic process...

Magnetic of forming magnetic tunnel junction device using protectiv...

Spin orbit torque (SOT) memory device with self-aligned contacts an...

Multilayered seed for perpendicular magnetic structure

Memory device having bitline segmented into bitline segments and re...

Magnetoresistive random access memory device and method of manufact...

Patents Applicationslast 30 patents

MAGNETORESISTIVE RANDOM-ACCESS MEMORY STRUCTURE

MULTIFERROIC TUNNEL JUNCTION MEMORY DEVICE AND RELATED METHODS

MEMORY ARRAY

PILLAR MEMORY TOP CONTACT LANDING

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

LAYOUT AND PROCESSING METHOD THEREOF, STORAGE MEDIUM, AND PROGRAM P...

SELF-ALIGNED CROSSBAR-COMPATIBLE ELECTROCHEMICAL MEMORY STRUCTURE

MAGNETORESISTIVE RANDOM ACCESS MEMORY

SEMICONDUCTOR MEMORY DEVICE

MEMORY DEVICE AND ELECTRONIC DEVICE

DUAL LAYER TOP CONTACT FOR MAGNETIC TUNNEL JUNCTION STACK

TUNNELING MAGNETORESISTIVE (TMR) DEVICE WITH IMPROVED SEED LAYER

MAGNETIC MEMORY DEVICE

SPIN-ORBIT TORQUE AND SPIN-TRANSFER TORQUE MAGNETORESISTIVE RANDOM-...

MAGNETIC JUNCTION MEMORY DEVICE AND READING METHOD THEREOF

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY

MAGNETORESISTIVE DEVICES AND METHODS THEREFOR

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH INTEGR...

STACKED SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY

HIGH-TEMPERATURE THREE-DIMENSIONAL HALL SENSOR WITH REAL-TIME WORKI...

MAGNETIC DOMAIN WALL MOVEMENT ELEMENT AND MAGNETIC ARRAY

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING SEMI...

MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

ONE TRANSISTOR ONE MAGNETIC TUNNEL JUNCTION MULTIPLE BIT MAGNETORES...

Magnetic Tunnel Junction Device

METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES

MEMORY DEVICE GENERATING OPTIMAL WRITE VOLTAGE BASED ON SIZE OF MEM...

STATIC RANDOM ACCESS MEMORY WITH MAGNETIC TUNNEL JUNCTION CELLS

MAGNETIC MEMORY