consisting of more than two layers

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H01L21/02505

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02505consisting of more than two layers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor component and process for its production
- Patent number 12,125,938
- Issue date Oct 22, 2024
- Azur Space Solar Power GmbH
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer structure to improve gan semiconductors
- Patent number 12,119,382
- Issue date Oct 15, 2024
- GlobalWafers Co., Ltd.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Flow cells
- Patent number 12,085,499
- Issue date Sep 10, 2024
- Illumina, Inc.
- Sahngki Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling wafer bow in a type III-V semiconductor device
- Patent number 12,080,785
- Issue date Sep 3, 2024
- Infineon Technologies Austria AG
- Seong-Eun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device
- Patent number 12,068,410
- Issue date Aug 20, 2024
- Epistar Corporation
- Ya-Yu Yang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor on insulator wafer with cavity structures
- Patent number 12,027,580
- Issue date Jul 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor element
- Patent number 12,020,930
- Issue date Jun 25, 2024
- Asahi Kasei Kabushiki Kaisha
- Kosuke Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,009,205
- Issue date Jun 11, 2024
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial layers with discontinued aluminium content for III-nitrid...
- Patent number 11,942,521
- Issue date Mar 26, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Peng-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced interfacial area III-nitride material semiconductor structures
- Patent number 11,942,518
- Issue date Mar 26, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group-III nitride devices and systems on IBAD-textured substrates
- Patent number RE49869
- Issue date Mar 12, 2024
- iBeam Materials, Inc.
- Vladimir Matias
Information Patent Grant
Signal processing board and image forming apparatus
- Patent number 11,930,135
- Issue date Mar 12, 2024
- Kyocera Document Solutions Inc.
- Ken Maruhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal semiconductor structure and method of manufacturing...
- Patent number 11,923,195
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Junhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a semiconductor device including a quantum dot struc...
- Patent number 11,881,533
- Issue date Jan 23, 2024
- International Business Machines Corporation
- Kirsten Emilie Moselund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photovoltaic devices and method of making
- Patent number 11,876,140
- Issue date Jan 16, 2024
- First Solar, Inc.
- Holly Ann Blaydes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing nitride semiconductor substrate and nitrid...
- Patent number 11,873,578
- Issue date Jan 16, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation glide suppression for misfit dislocation free heteroepi...
- Patent number 11,804,525
- Issue date Oct 31, 2023
- The Regents of the University of California
- John Bowers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication of a semiconductor device including a quantum dot struc...
- Patent number 11,728,448
- Issue date Aug 15, 2023
- International Business Machines Corporation
- Markus Scherrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor layer
- Patent number 11,721,548
- Issue date Aug 8, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated photonics including waveguiding material
- Patent number 11,703,643
- Issue date Jul 18, 2023
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Buffer layer structure to improve GaN semiconductors
- Patent number 11,705,489
- Issue date Jul 18, 2023
- GlobalWafers Co., Ltd.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride epitaxial structures for power devices
- Patent number 11,699,750
- Issue date Jul 11, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and use for low-temperature epitaxy and film texturing betwe...
- Patent number 11,694,895
- Issue date Jul 4, 2023
- The Government of the United States of America, as represented by the Secreta...
- Jeremy T. Robinson
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
FLOW CELLS
- Publication number 20240418630
- Publication date Dec 19, 2024
- Illumina, Inc.
- Sahngki Hong
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...
- Publication number 20240421246
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Saket CHADDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER FOR FORMING SEMICONDUCTOR COMPONENTS
- Publication number 20240404824
- Publication date Dec 5, 2024
- AZUR SPACE SOLAR POWER GMBH
- Atsushi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS
- Publication number 20240355619
- Publication date Oct 24, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kevin James LINTHICUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240321576
- Publication date Sep 26, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ON INSULATOR WAFER WITH CAVITY STRUCTURES
- Publication number 20240297216
- Publication date Sep 5, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES ON CONDUCTIVE SILICON...
- Publication number 20240266405
- Publication date Aug 8, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED QUANTUM...
- Publication number 20240247407
- Publication date Jul 25, 2024
- Applied Materials, Inc.
- Michael Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...
- Publication number 20240234135
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER CHIP ARCHITECTURE AND FABRICATION
- Publication number 20240194532
- Publication date Jun 13, 2024
- Google LLC
- Zhimin Jamie Yao
- B82 - NANO-TECHNOLOGY
Information Patent Application
PHOTOVOLTAIC DEVICES AND METHOD OF MAKING
- Publication number 20240154049
- Publication date May 9, 2024
- First Solar, Inc.
- Holly Ann Blaydes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...
- Publication number 20240120436
- Publication date Apr 11, 2024
- Jie Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAM...
- Publication number 20240112909
- Publication date Apr 4, 2024
- Panasonic Intellectual Property Management Co., Ltd.
- Hisayoshi MATSUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGNAL PROCESSING BOARD AND IMAGE FORMING APPARATUS
- Publication number 20240089377
- Publication date Mar 14, 2024
- KYOCERA DOCUMENT SOLUTIONS INC.
- Ken Maruhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20240079486
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Wei-Ting CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240071756
- Publication date Feb 29, 2024
- SUMCO CORPORATION
- Koji MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS
- Publication number 20240047201
- Publication date Feb 8, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, DEVICE AND METHOD OF M...
- Publication number 20240021671
- Publication date Jan 18, 2024
- Dynax Semiconductor, Inc.
- Hui ZHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
- Publication number 20230378278
- Publication date Nov 23, 2023
- GLOBALWAFERS CO., LTD.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING A SEMICONDUCTOR ASSEMBLY AND SEMICONDUCTOR ASSEMBLY
- Publication number 20230360908
- Publication date Nov 9, 2023
- OTTO-VON GUERICKE-UNIVERSITAT MAGDEBURG
- Armin DADGAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Crystallographically-oriented Metallic Films with Two-dimensional C...
- Publication number 20230307232
- Publication date Sep 28, 2023
- The Government of the United States of America, as represented by the Secreta...
- Jeremy T. Robinson
- B82 - NANO-TECHNOLOGY
Information Patent Application
Methods for Transferring Graphene to Substrates and Related Lithogr...
- Publication number 20230274933
- Publication date Aug 31, 2023
- Bard Access Systems, Inc.
- Vivek Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE WITH NITRIDED INTERFACE LAYER
- Publication number 20230274934
- Publication date Aug 31, 2023
- IVWorks Co., Ltd.
- Florian TENDILLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES
- Publication number 20230261101
- Publication date Aug 17, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED STRUCTURE
- Publication number 20230245884
- Publication date Aug 3, 2023
- IQE plc
- Richard HAMMOND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON
- Publication number 20230238246
- Publication date Jul 27, 2023
- The Board of Trustees of the University of Illnois
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR SUBSTRATE FOR RF APPLICATIONS
- Publication number 20230238274
- Publication date Jul 27, 2023
- SOITEC
- Arnaud Castex
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
- Publication number 20230215924
- Publication date Jul 6, 2023
- GLOBALWAFERS CO., LTD.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20230178367
- Publication date Jun 8, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A SEMICONDUCTOR DEVICE INCLUDING A QUANTUM DOT STRUC...
- Publication number 20230170428
- Publication date Jun 1, 2023
- International Business Machines Corporation
- Kirsten Emilie Moselund
- H01 - BASIC ELECTRIC ELEMENTS

consisting of more than two layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optimized heteroepitaxial growth of semiconductors

Nitride semiconductor component and process for its production

Buffer layer structure to improve gan semiconductors

Optimized heteroepitaxial growth of semiconductors

Flow cells

Method of controlling wafer bow in a type III-V semiconductor device

Semiconductor power device

Semiconductor on insulator wafer with cavity structures

Nitride semiconductor element

Engineered substrate structures for power and RF applications

Epitaxial layers with discontinued aluminium content for III-nitrid...

Reduced interfacial area III-nitride material semiconductor structures

Group-III nitride devices and systems on IBAD-textured substrates

Signal processing board and image forming apparatus

Single crystal semiconductor structure and method of manufacturing...

Fabrication of a semiconductor device including a quantum dot struc...

Photovoltaic devices and method of making

Method for manufacturing nitride semiconductor substrate and nitrid...

Dislocation glide suppression for misfit dislocation free heteroepi...

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Fabrication of a semiconductor device including a quantum dot struc...

Method for forming semiconductor layer

Integrated photonics including waveguiding material

Buffer layer structure to improve GaN semiconductors

Gallium nitride epitaxial structures for power devices

Method and use for low-temperature epitaxy and film texturing betwe...

Patents Applicationslast 30 patents

FLOW CELLS

LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...

SEMICONDUCTOR WAFER FOR FORMING SEMICONDUCTOR COMPONENTS

SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR ON INSULATOR WAFER WITH CAVITY STRUCTURES

III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES ON CONDUCTIVE SILICON...

INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED QUANTUM...

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...

MULTI-LAYER CHIP ARCHITECTURE AND FABRICATION

PHOTOVOLTAIC DEVICES AND METHOD OF MAKING

LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...

NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAM...

SIGNAL PROCESSING BOARD AND IMAGE FORMING APPARATUS

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS

EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, DEVICE AND METHOD OF M...

NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS

METHOD FOR GROWING A SEMICONDUCTOR ASSEMBLY AND SEMICONDUCTOR ASSEMBLY

Crystallographically-oriented Metallic Films with Two-dimensional C...

Methods for Transferring Graphene to Substrates and Related Lithogr...

SEMICONDUCTOR SUBSTRATE WITH NITRIDED INTERFACE LAYER

GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES

LAYERED STRUCTURE

LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON

SEMICONDUCTOR-ON-INSULATOR SUBSTRATE FOR RF APPLICATIONS

NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

FABRICATION OF A SEMICONDUCTOR DEVICE INCLUDING A QUANTUM DOT STRUC...