containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the band-gap srongly in a non-linear way by the bowing effect

Industry

CPC
H01S5/32358

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Parent Industries

HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

Current Industry

H01S5/32358containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the band-gap srongly in a non-linear way by the bowing effect

Industries

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containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the band-gap srongly in a non-linear way by the bowing effect

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of fabricating dilute nitride semiconductor materials for u...

Migration enhanced epitaxy fabrication of active regions having qua...

Migration enhanced epitaxy fabrication of active regions having qua...

Laser diode having an active layer containing N and operable in a 0...

Migration enhanced epitaxy fabrication of quantum wells

Low temperature grown layers with migration enhanced epitaxy adjace...

Multicomponent barrier layers in quantum well active regions to enh...

Laser diode having an active layer containing N and operable in a 0...

Use of GaAs extended barrier layers between active regions containi...

Vertical cavity surface emitting laser including indium, antimony a...

Indium free vertical cavity surface emitting laser

Light emitting devices with layered III -V semiconductor structures...

Semiconductor laser device having lower threshold current

Laser diode having an active layer containing N and operable in a 0...

Light emitting devices with layered III-V semiconductor structures,...

Method and apparatus for long wavelength semiconductor lasers

Compound semiconductor structures for optoelectronic devices

Laser diode having an active layer containing N and operable in a 0...

Method for fabricating semiconductor device and semiconductor device

Layered III-V semiconductor structures and light emitting devices i...

Semiconductor laser device and method of producing the same

Light emitting devices with layered III-V semiconductor structures

Optical semiconductor device having a semiconductor laminate mirror

Long wavelength vertical cavity surface emitting laser

Patents Applicationslast 30 patents

MULTI-WAVELENGTH LIGHT-EMITTING SEMICONDUCTOR DEVICES

METHODS OF FABRICATING DILUTE NITRIDE SEMICONDUCTOR MATERIALS FOR U...

MIGRATION ENHANCED EPITAXY FABRICATION OF ACTIVE REGIONS HAVING QUA...

MIGRATION ENHANCED EPITAXY FABRICATION OF ACTIVE REGIONS HAVING QUA...

Laser diode having an active layer containing N and operable in a 0...

Optical integrated device

Semiconductor laser device having lower threshold current

Low temperature grown layers with migration enhanced epitaxy adjace...

System for developing a nitrogen-containing active region

Multicomponent barrier layers in quantum well active regions to enh...

Use of GaAs extended barrier layers between active regions containi...

System for developing a nitrogen-containing active region

Laser diode having an active layer containing N and operable in a 0...

Light emitting devices with layered III -V semiconductor structures...

System and method using migration enhanced epitaxy for flattening a...

Indium free vertical cavity surface emitting laser

Vertical cavity surface emitting laser including indium, antimony a...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Semiconductor laser device having lower threshold current

Light emitting devices with layered III-V semiconductor structures,...