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CPC
C30B19/10

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B19/00Liquid-phase epitaxial-layer growth

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C30B19/10Controlling or regulating

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Patents Grantslast 30 patents

Information Patent Grant
Fabrication of PBSE nanostructures by employing chemical bath depos...
- Patent number 12,195,874
- Issue date Jan 14, 2025
- Illinois Tool Works Inc.
- Richard S. Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Textured metal substrates for negative electrodes of lithium metal...
- Patent number 12,040,479
- Issue date Jul 16, 2024
- GM Global Technology Operations LLC
- Andrew C. Bobel
- C30 - CRYSTAL GROWTH
Information Patent Grant
High refractive index organic solid crystal with controlled surface...
- Patent number 12,024,793
- Issue date Jul 2, 2024
- Meta Platforms Technologies, LLC
- Tingling Rao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
- Patent number 11,784,045
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Grant
In-situ laser annealing of Te growth defects in CdZnTe (ilast-czt)
- Patent number 11,725,300
- Issue date Aug 15, 2023
- EPIR, INC.
- Sushant Sonde
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxy of III-V materials and alloys
- Patent number 11,441,234
- Issue date Sep 13, 2022
- University of Louisville Research Foundation, Inc.
- Mahendra K. Sunkara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming oxide film, method of manufacturing semiconductor...
- Patent number 11,371,161
- Issue date Jun 28, 2022
- Denso Corporation
- Tatsuji Nagaoka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
- Patent number 11,251,042
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method for group III nitride crystal
- Patent number 10,927,476
- Issue date Feb 23, 2021
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Systems and methods for additive manufacturing and repair of metal...
- Patent number 10,639,721
- Issue date May 5, 2020
- Georgia Tech Research Corporation
- Suman Das
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Devices and methods for electrochemical liquid phase epitaxy
- Patent number 10,538,860
- Issue date Jan 21, 2020
- THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Stephen Maldonado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-aligned tunable metamaterials
- Patent number 10,501,867
- Issue date Dec 10, 2019
- Arturo A Ayon
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Preparation method and application of sodium barium fluoroborate bi...
- Patent number 10,487,419
- Issue date Nov 26, 2019
- XINJIANG TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY, CHINESE ACADEMY OF SCI...
- Shilie Pan
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,450,671
- Issue date Oct 22, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing crystal
- Patent number 10,443,149
- Issue date Oct 15, 2019
- Kyocera Corporation
- Chiaki Domoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and production method thereof
- Patent number 10,428,440
- Issue date Oct 1, 2019
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,415,152
- Issue date Sep 17, 2019
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bulk nanofabrication with single atomic plane precision via atomic-...
- Patent number 10,400,351
- Issue date Sep 3, 2019
- UT-Battelle, LLC
- Albina Y. Borisevich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing silicon carbide single crystal in a solution p...
- Patent number 10,260,167
- Issue date Apr 16, 2019
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride of group-13 element, and melt composition
- Patent number 10,156,022
- Issue date Dec 18, 2018
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing crystal of silicon carbide, and crystal produc...
- Patent number 10,151,046
- Issue date Dec 11, 2018
- National University Corporation Nagoya University
- Toru Ujihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 10,145,025
- Issue date Dec 4, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuaki Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 10,119,199
- Issue date Nov 6, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuaki Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 9,777,399
- Issue date Oct 3, 2017
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 9,732,437
- Issue date Aug 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single-crystal ingot, SiC single crystal, and production method...
- Patent number 9,732,436
- Issue date Aug 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC single crystal in the presence of a magn...
- Patent number 9,708,734
- Issue date Jul 18, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing an n-type SiC single crystal from a Si—C solut...
- Patent number 9,702,057
- Issue date Jul 11, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a bulk single crystal nitride material
- Patent number 9,611,564
- Issue date Apr 4, 2017
- Nanliu Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and device for fabricating a layer in semiconductor material
- Patent number 9,528,196
- Issue date Dec 27, 2016
- Soitec
- Michel Bruel
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SIN...
- Publication number 20250034751
- Publication date Jan 30, 2025
- TOHOKU UNIVERSITY
- Hiroyuki FUKUYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
TREATMENT SOLUTION AND TREATMENT METHOD
- Publication number 20240352578
- Publication date Oct 24, 2024
- Kabushiki Kaisha Toshiba
- Kenya UCHIDA
- A62 - LIFE-SAVING FIRE-FIGHTING
Information Patent Application
TREATMENT SOLUTION AND TREATMENT METHOD
- Publication number 20240247369
- Publication date Jul 25, 2024
- Kabushiki Kaisha Toshiba
- Kenya UCHIDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20240030027
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD FOR MANUFACTURING A CRYSTALLINE CONVERSION LAYER...
- Publication number 20230357948
- Publication date Nov 9, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Jean-Marie VERILHAC
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PREPARING SINGLE CRYSTAL PEROVSKITE AND METHOD OF MANUFAC...
- Publication number 20230357956
- Publication date Nov 9, 2023
- Do Hyung KIM
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION OF PBSE NANOSTRUCTURES BY EMPLOYING CHEMICAL BATH DEPOS...
- Publication number 20230160099
- Publication date May 25, 2023
- Illinois Tool Works Inc.
- Richard S. Kim
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH REFRACTIVE INDEX ORGANIC SOLID CRYSTAL WITH CONTROLLED SURFACE...
- Publication number 20230037175
- Publication date Feb 2, 2023
- Meta Platforms Technologies, LLC
- Tingling Rao
- C30 - CRYSTAL GROWTH
Information Patent Application
In-situ Laser Annealing of Te growth defects in CdZnTe (iLAST-CZT)
- Publication number 20230002928
- Publication date Jan 5, 2023
- Sushant Sonde
- C30 - CRYSTAL GROWTH
Information Patent Application
TEXTURED METAL SUBSTRATES FOR NEGATIVE ELECTRODES OF LITHIUM METAL...
- Publication number 20220416220
- Publication date Dec 29, 2022
- GM GLOBAL TECHNOLOGY OPERATIONS LLC
- Andrew C. Bobel
- C30 - CRYSTAL GROWTH
Information Patent Application
STRAIN ENGINEERING AND EPITAXIAL STABILIZATION OF HALIDE PEROVSKITES
- Publication number 20220320433
- Publication date Oct 6, 2022
- The Regents of the University of California
- Sheng Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20220130669
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20210134594
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIQUID PHASE EPITAXY OF III-V MATERIALS AND ALLOYS
- Publication number 20210108330
- Publication date Apr 15, 2021
- UNIVERSITY OF LOUISVILLE RESEARCH FOUNDATION, INC.
- Mahendra K. Sunkara
- C30 - CRYSTAL GROWTH
Information Patent Application
TREATMENT SOLUTION AND TREATMENT METHOD
- Publication number 20210002760
- Publication date Jan 7, 2021
- Kabushiki Kaisha Toshiba
- Kenya UCHIDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING OXIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20200385884
- Publication date Dec 10, 2020
- Toyota Jidosha Kabushiki Kaisha
- Tatsuji NAGAOKA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20200299858
- Publication date Sep 24, 2020
- Toyoda Gosei Co., Ltd.
- Shiro YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR ADDITIVE MANUFACTURING AND REPAIR OF METAL...
- Publication number 20200269322
- Publication date Aug 27, 2020
- Georgia Tech Research Corporation
- Suman DAS
- B22 - CASTING POWDER METALLURGY
Information Patent Application
PRODUCTION METHOD FOR GROUP III NITRIDE CRYSTAL
- Publication number 20190271096
- Publication date Sep 5, 2019
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS...
- Publication number 20180163323
- Publication date Jun 14, 2018
- Takashi Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20180112328
- Publication date Apr 26, 2018
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuaki SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20180112329
- Publication date Apr 26, 2018
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuaki SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20180100247
- Publication date Apr 12, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
NON-ENZYMATIC GLUCOSE BIOSENSOR AND MANUFACTURING METHOD THEREOF AN...
- Publication number 20180095050
- Publication date Apr 5, 2018
- National Tsing-Hua University
- Fan-Gang Tseng
- C30 - CRYSTAL GROWTH
Information Patent Application
BULK NANOFABRICATION WITH SINGLE ATOMIC PLANE PRECISION VIA ATOMIC-...
- Publication number 20180066376
- Publication date Mar 8, 2018
- UT-Battelle, LLC
- Albina Y. Borisevich
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170327968
- Publication date Nov 16, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Crystal of Silicon Carbide, and Crystal Produc...
- Publication number 20170260647
- Publication date Sep 14, 2017
- NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Toru UJIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR ADDITIVE MANUFACTURING AND REPAIR OF METAL...
- Publication number 20170182562
- Publication date Jun 29, 2017
- Georgia Tech Research Corporation
- Suman DAS
- C30 - CRYSTAL GROWTH
Information Patent Application
PRECIPITATION PROCESS FOR PRODUCING PEROVSKITE-BASED SOLAR CELLS
- Publication number 20170084400
- Publication date Mar 23, 2017
- MONASH UNIVERSITY
- Yi-bing Cheng
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170009374
- Publication date Jan 12, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH

Controlling or regulating

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Fabrication of PBSE nanostructures by employing chemical bath depos...

Textured metal substrates for negative electrodes of lithium metal...

High refractive index organic solid crystal with controlled surface...

Formation of single crystal semiconductors using planar vapor liqui...

In-situ laser annealing of Te growth defects in CdZnTe (ilast-czt)

Liquid phase epitaxy of III-V materials and alloys

Method of forming oxide film, method of manufacturing semiconductor...

Formation of single crystal semiconductors using planar vapor liqui...

Production method for group III nitride crystal

Systems and methods for additive manufacturing and repair of metal...

Devices and methods for electrochemical liquid phase epitaxy

Self-aligned tunable metamaterials

Preparation method and application of sodium barium fluoroborate bi...

SiC single crystal and method for producing same

Method of producing crystal

SiC single crystal and production method thereof

SiC single crystal and method for producing same

Bulk nanofabrication with single atomic plane precision via atomic-...

Method for producing silicon carbide single crystal in a solution p...

Method for producing nitride of group-13 element, and melt composition

Method for producing crystal of silicon carbide, and crystal produc...

Method for producing SiC single crystal

Method for producing SiC single crystal

Method for producing SiC single crystal

SiC single crystal and method for producing same

SiC single-crystal ingot, SiC single crystal, and production method...

Method for producing a SiC single crystal in the presence of a magn...

Method for producing an n-type SiC single crystal from a Si—C solut...

Method for growing a bulk single crystal nitride material

Method and device for fabricating a layer in semiconductor material

Patents Applicationslast 30 patents

METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SIN...

TREATMENT SOLUTION AND TREATMENT METHOD

TREATMENT SOLUTION AND TREATMENT METHOD

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

DEVICE AND METHOD FOR MANUFACTURING A CRYSTALLINE CONVERSION LAYER...

METHOD OF PREPARING SINGLE CRYSTAL PEROVSKITE AND METHOD OF MANUFAC...

FABRICATION OF PBSE NANOSTRUCTURES BY EMPLOYING CHEMICAL BATH DEPOS...

HIGH REFRACTIVE INDEX ORGANIC SOLID CRYSTAL WITH CONTROLLED SURFACE...

In-situ Laser Annealing of Te growth defects in CdZnTe (iLAST-CZT)

TEXTURED METAL SUBSTRATES FOR NEGATIVE ELECTRODES OF LITHIUM METAL...

STRAIN ENGINEERING AND EPITAXIAL STABILIZATION OF HALIDE PEROVSKITES

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

LIQUID PHASE EPITAXY OF III-V MATERIALS AND ALLOYS

TREATMENT SOLUTION AND TREATMENT METHOD

METHOD OF FORMING OXIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR...

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

SYSTEMS AND METHODS FOR ADDITIVE MANUFACTURING AND REPAIR OF METAL...

PRODUCTION METHOD FOR GROUP III NITRIDE CRYSTAL

METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

NON-ENZYMATIC GLUCOSE BIOSENSOR AND MANUFACTURING METHOD THEREOF AN...

BULK NANOFABRICATION WITH SINGLE ATOMIC PLANE PRECISION VIA ATOMIC-...

SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

Method for Producing Crystal of Silicon Carbide, and Crystal Produc...

SYSTEMS AND METHODS FOR ADDITIVE MANUFACTURING AND REPAIR OF METAL...

PRECIPITATION PROCESS FOR PRODUCING PEROVSKITE-BASED SOLAR CELLS

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME