Controlling or regulating

Industry

CPC
C30B23/002

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B23/00Single-crystal growth by condensing evaporated or sublimed material

Current Industry

C30B23/002Controlling or regulating

Industries

Patents Grantslast 30 patents

Information Patent Grant
Crystal growth method and wafer
- Patent number 12,123,105
- Issue date Oct 22, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
In-situ film growth rate monitoring apparatus, systems, and methods...
- Patent number 12,077,880
- Issue date Sep 3, 2024
- Applied Materials, Inc.
- Zhepeng Cong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fabrication of films having controlled stoichiometry using molecula...
- Patent number 12,037,700
- Issue date Jul 16, 2024
- PSIQUANTUM, CORP.
- Yong Liang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Manufacturing method of silicon carbide wafer and semiconductor str...
- Patent number 11,987,902
- Issue date May 21, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of synthesizing molybdenum oxychloride by reacting molybdenu...
- Patent number 11,939,231
- Issue date Mar 26, 2024
- JX Metals Corporation
- Hideyuki Takahashi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Molecular-beam epitaxy system comprising an infrared radiation emit...
- Patent number 11,926,925
- Issue date Mar 12, 2024
- The Johns Hopkins University
- David B. Shrekenhamer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal control for formation and processing of aluminum nitride
- Patent number 11,913,136
- Issue date Feb 27, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Manufacturing method for a group-III nitride crystal that requires...
- Patent number 11,859,311
- Issue date Jan 2, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large, UV-transparent aluminum nitride single crystals
- Patent number 11,828,002
- Issue date Nov 28, 2023
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for depositing high quality PVD films
- Patent number 11,802,349
- Issue date Oct 31, 2023
- Applied Materials, Inc.
- Zihao Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing a silicon carbide ingot comprising moving a...
- Patent number 11,795,572
- Issue date Oct 24, 2023
- SENIC INC.
- Byung Kyu Jang
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal manufacturing apparatus
- Patent number 11,761,113
- Issue date Sep 19, 2023
- Resonac Corporation
- Kotaro Ishita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC growth apparatus comprised of a base having a plurality of grap...
- Patent number 11,708,645
- Issue date Jul 25, 2023
- Showa Denko K.K.
- Nobutoshi Sudoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication of films having controlled stoichiometry using molecula...
- Patent number 11,680,337
- Issue date Jun 20, 2023
- PSIQUANTUM, CORP.
- Yong Liang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Thermal control for formation and processing of aluminum nitride
- Patent number 11,578,425
- Issue date Feb 14, 2023
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing p-type 4H-SiC single crystal
- Patent number 11,542,631
- Issue date Jan 3, 2023
- National Institute of Advanced Industrial Science and Technology
- Kazuma Eto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing silicon carbide wafer and silicon carbide wafer
- Patent number 11,474,012
- Issue date Oct 18, 2022
- SENIC INC.
- Jong Hwi Park
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Silicon carbide ingot, method of preparing the same, and method for...
- Patent number 11,466,383
- Issue date Oct 11, 2022
- SENIC INC.
- Jong Hwi Park
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC ingot and method of manufacturing SiC ingot
- Patent number 11,459,669
- Issue date Oct 4, 2022
- Showa Denko K.K.
- Rimpei Kindaichi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth apparatus including heater with multiple regions and...
- Patent number 11,453,959
- Issue date Sep 27, 2022
- Showa Denko K.K.
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Adhesive layer of seed crystal, method for preparing a laminate usi...
- Patent number 11,447,889
- Issue date Sep 20, 2022
- SENIC INC.
- Jong Hwi Park
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Devices and methods for growing crystals
- Patent number 11,408,089
- Issue date Aug 9, 2022
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide ingot manufacturing method and silicon carbide ingo...
- Patent number 11,339,497
- Issue date May 24, 2022
- SENIC INC.
- Jong Hwi Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a silicon carbide single crystal by adjust...
- Patent number 11,149,357
- Issue date Oct 19, 2021
- Shin-Etsu Handotai Co., Ltd.
- Hitoshi Ikeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growth method which includes covering a part of a su...
- Patent number 11,111,599
- Issue date Sep 7, 2021
- SHOWA DENKO K.K.
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for evaluating quality of SiC single crystal body and method...
- Patent number 11,078,596
- Issue date Aug 3, 2021
- Showa Denko K.K.
- Masashi Nakabayashi
- G01 - MEASURING TESTING
Information Patent Grant
Film formation method, vacuum processing apparatus, method of manuf...
- Patent number 11,035,034
- Issue date Jun 15, 2021
- Canon Anelva Corporation
- Yoshiaki Daigo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Shielding member and single crystal growth device having the same
- Patent number 10,995,418
- Issue date May 4, 2021
- Showa Denko K.K.
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
UV-transparent aluminum nitride single crystal having a diameter of...
- Patent number 10,954,608
- Issue date Mar 23, 2021
- Crystal IS, Inc.
- Robert T. Bondokov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide single crystal ingot
- Patent number 10,907,272
- Issue date Feb 2, 2021
- Showa Denko K.K.
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
PVT-METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS IN A SAFE MANNE...
- Publication number 20240376633
- Publication date Nov 14, 2024
- PVA TePla AG
- Michael SCHÖLER
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MOLYBDENUM PENTACHLORIDE CONDITIONING AND CRYSTALLINE PHASE MANIPUL...
- Publication number 20240344235
- Publication date Oct 17, 2024
- L'air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Ge...
- Feng LI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...
- Publication number 20240337044
- Publication date Oct 10, 2024
- DENSO CORPORATION
- NOBUYUKI OYA
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DE...
- Publication number 20240328030
- Publication date Oct 3, 2024
- Hexatech, Inc.
- Rafael Dalmau
- C30 - CRYSTAL GROWTH
Information Patent Application
LASER PROCESSING SYSTEM INTEGRATED WITH MBE DEVICE
- Publication number 20240309544
- Publication date Sep 19, 2024
- Wuhan University
- Fang Dong
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FABRICATING SILICON CARBIDE INGOT
- Publication number 20240271322
- Publication date Aug 15, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hierarchical Inverted/Normal Cobalt Ferrite Nano-Chessboard
- Publication number 20240240356
- Publication date Jul 18, 2024
- MORGAN STATE UNIVERSITY
- Abdellah Lisfi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND SYSTEM FOR GROWING A LATTICE MATCHED, MULTILAYER, ORGANI...
- Publication number 20240117521
- Publication date Apr 11, 2024
- The Trustees of Princeton University
- Barry Rand
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS
- Publication number 20240110307
- Publication date Apr 4, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH DEVICE AND METHOD FOR GROWING A SEMICONDUCTOR
- Publication number 20240044044
- Publication date Feb 8, 2024
- FORSCHUNGSVERBUND BERLIN E.V.
- Carsten HARTMANN
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH METHOD AND WAFER
- Publication number 20240011186
- Publication date Jan 11, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES,...
- Publication number 20240011184
- Publication date Jan 11, 2024
- National University of Singapore
- Andrivo RUSYDI
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWING METHOD FOR CRYSTALS
- Publication number 20240011185
- Publication date Jan 11, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...
- Publication number 20240003054
- Publication date Jan 4, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING CRYSTALS
- Publication number 20230357951
- Publication date Nov 9, 2023
- EBNER INDUSTRIEOFENBAU GMBH
- Robert EBNER
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION OF FILMS HAVING CONTROLLED STOICHIOMETRY USING MOLECULA...
- Publication number 20230349067
- Publication date Nov 2, 2023
- Psiquantum, Corp.
- Yong Liang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES A...
- Publication number 20230349068
- Publication date Nov 2, 2023
- Board of Regents, The University of Texas System
- Manuel Quevedo Lopez
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE INGOT, METHOD FOR MANUFACTURING SILICON CARBIDE ING...
- Publication number 20230193510
- Publication date Jun 22, 2023
- MIRISE Technologies Corporation
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
THERMAL CONTROL FOR FORMATION AND PROCESSING OF ALUMINUM NITRIDE
- Publication number 20230167584
- Publication date Jun 1, 2023
- Robert T. BONDOKOV
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD AND APPARATUS FOR SYNCHRONOUS GROWTH OF SILICON CARBIDE CRYS...
- Publication number 20230151511
- Publication date May 18, 2023
- SUZHOU UKING PHOTOELECTRIC TECHNOLOGY CO., LTD.
- Jianming CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD FOR GROUP-III NITRIDE CRYSTAL
- Publication number 20220411964
- Publication date Dec 29, 2022
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICES AND METHODS FOR GROWING CRYSTALS
- Publication number 20220356599
- Publication date Nov 10, 2022
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...
- Publication number 20220349088
- Publication date Nov 3, 2022
- Applied Materials, Inc.
- Zhepeng CONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE INGOT, METHOD OF PREPARING THE SAME, AND METHOD FOR...
- Publication number 20220341055
- Publication date Oct 27, 2022
- SENIC Inc.
- Jong Hwi PARK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Molecular Beam Epitaxial Growth Apparatus, Crystal Growth Method An...
- Publication number 20220316088
- Publication date Oct 6, 2022
- SEIKO EPSON CORPORATION
- Hiroyuki SHIMADA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NANOPOWDER CONTINUOUS PRODUCTION DEVICE FOR IMPROVING NANOPOWDER CO...
- Publication number 20220307158
- Publication date Sep 29, 2022
- Tae Yun Kim
- B82 - NANO-TECHNOLOGY
Information Patent Application
SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGO...
- Publication number 20220220632
- Publication date Jul 14, 2022
- SENIC Inc.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGO...
- Publication number 20220064817
- Publication date Mar 3, 2022
- SENIC INC.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICES AND METHODS FOR GROWING CRYSTALS
- Publication number 20220056612
- Publication date Feb 24, 2022
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME
- Publication number 20220025549
- Publication date Jan 27, 2022
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY

Controlling or regulating

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Crystal growth method and wafer

In-situ film growth rate monitoring apparatus, systems, and methods...

Fabrication of films having controlled stoichiometry using molecula...

Manufacturing method of silicon carbide wafer and semiconductor str...

Method of synthesizing molybdenum oxychloride by reacting molybdenu...

Molecular-beam epitaxy system comprising an infrared radiation emit...

Thermal control for formation and processing of aluminum nitride

Manufacturing method for a group-III nitride crystal that requires...

Large, UV-transparent aluminum nitride single crystals

Method for depositing high quality PVD films

Method of manufacturing a silicon carbide ingot comprising moving a...

SiC single crystal manufacturing apparatus

SiC growth apparatus comprised of a base having a plurality of grap...

Fabrication of films having controlled stoichiometry using molecula...

Thermal control for formation and processing of aluminum nitride

Method for producing p-type 4H-SiC single crystal

Method for preparing silicon carbide wafer and silicon carbide wafer

Silicon carbide ingot, method of preparing the same, and method for...

SiC ingot and method of manufacturing SiC ingot

Crystal growth apparatus including heater with multiple regions and...

Adhesive layer of seed crystal, method for preparing a laminate usi...

Devices and methods for growing crystals

Silicon carbide ingot manufacturing method and silicon carbide ingo...

Method for manufacturing a silicon carbide single crystal by adjust...

Single crystal growth method which includes covering a part of a su...

Method for evaluating quality of SiC single crystal body and method...

Film formation method, vacuum processing apparatus, method of manuf...

Shielding member and single crystal growth device having the same

UV-transparent aluminum nitride single crystal having a diameter of...

Method of manufacturing silicon carbide single crystal ingot

Patents Applicationslast 30 patents

PVT-METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS IN A SAFE MANNE...

MOLYBDENUM PENTACHLORIDE CONDITIONING AND CRYSTALLINE PHASE MANIPUL...

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...

SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DE...

LASER PROCESSING SYSTEM INTEGRATED WITH MBE DEVICE

METHOD OF FABRICATING SILICON CARBIDE INGOT

Hierarchical Inverted/Normal Cobalt Ferrite Nano-Chessboard

METHOD AND SYSTEM FOR GROWING A LATTICE MATCHED, MULTILAYER, ORGANI...

METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS

CRYSTAL GROWTH DEVICE AND METHOD FOR GROWING A SEMICONDUCTOR

CRYSTAL GROWTH METHOD AND WAFER

HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES,...

CRYSTAL GROWING METHOD FOR CRYSTALS

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...

METHOD FOR GROWING CRYSTALS

FABRICATION OF FILMS HAVING CONTROLLED STOICHIOMETRY USING MOLECULA...

METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES A...

SILICON CARBIDE INGOT, METHOD FOR MANUFACTURING SILICON CARBIDE ING...

THERMAL CONTROL FOR FORMATION AND PROCESSING OF ALUMINUM NITRIDE

METHOD AND APPARATUS FOR SYNCHRONOUS GROWTH OF SILICON CARBIDE CRYS...

MANUFACTURING METHOD FOR GROUP-III NITRIDE CRYSTAL

DEVICES AND METHODS FOR GROWING CRYSTALS

IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...

SILICON CARBIDE INGOT, METHOD OF PREPARING THE SAME, AND METHOD FOR...

Molecular Beam Epitaxial Growth Apparatus, Crystal Growth Method An...

NANOPOWDER CONTINUOUS PRODUCTION DEVICE FOR IMPROVING NANOPOWDER CO...

SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGO...

SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGO...

DEVICES AND METHODS FOR GROWING CRYSTALS

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME