Copper indium selenide, CIS [CuInSe2]

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CPC
H01L2924/10823

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

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H01L2924/10823Copper indium selenide, CIS [CuInSe2]

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Patents Grantslast 30 patents

Information Patent Grant
Method for permanently bonding wafers
- Patent number 10,825,793
- Issue date Nov 3, 2020
- EV Group E. Thallner GmbH
- Thomas Plach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for applying a bonding layer
- Patent number 10,438,925
- Issue date Oct 8, 2019
- EV Group E. Thallner GmbH
- Markus Wimplinger
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method for applying a bonding layer
- Patent number 9,627,349
- Issue date Apr 18, 2017
- EV Group E. Thallner GmbH
- Markus Wimplinger
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PERMANENTLY BONDING WAFERS
- Publication number 20170229423
- Publication date Aug 10, 2017
- EV GROUP E. THALLNER GMBH
- Thomas Plach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR APPLYING A BONDING LAYER
- Publication number 20160190092
- Publication date Jun 30, 2016
- EV GROUP E. THALLNER GMBH
- Markus WIMPLINGER
- B81 - MICRO-STRUCTURAL TECHNOLOGY