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H01S5/3068

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HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

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H01S5/3068deep levels

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor layer stack and method for producing same
- Patent number 11,870,220
- Issue date Jan 9, 2024
- Otto-von-Guericke Universitaet Magdeburg
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor layer stack and method for producing same
- Patent number 11,424,596
- Issue date Aug 23, 2022
- Otto-von-Guericke Universitaet Magdeburg
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically pumped broadly tunable mid-infrared lasers based on qu...
- Patent number 8,284,805
- Issue date Oct 9, 2012
- The UAB Research Foundation
- Sergey B. Mirov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and methods for optical amplification in semiconductors
- Patent number 7,724,425
- Issue date May 25, 2010
- Ramot at Tel Aviv University Ltd.
- Shlomo Ruschin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for optical amplification in indirect-gap semi...
- Patent number 7,486,437
- Issue date Feb 3, 2009
- Ramot at Tel Aviv University Ltd.
- Shlomo Ruschin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circular polarization spin semiconductor laser using magnetic semic...
- Patent number 7,254,150
- Issue date Aug 7, 2007
- Japan Science and Technology Agency
- Hiroshi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of deep-level transitions in semiconductor devices
- Patent number 7,049,641
- Issue date May 23, 2006
- Yale University
- Janet L. Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for electro-optic applications, method for man...
- Patent number 6,828,598
- Issue date Dec 7, 2004
- STMicroelectronics S.r.l.
- Salvatore Coffa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device
- Patent number 5,547,899
- Issue date Aug 20, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Nariaki Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a buried-ridge II-VI laser diode
- Patent number 5,538,918
- Issue date Jul 23, 1996
- Minnesota Mining and Manufacturing Company
- Michael A. Haase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Blue-green laser diode
- Patent number 5,513,199
- Issue date Apr 30, 1996
- Minnesota Mining and Manufacturing Company
- Michael A. Haase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Laser diode with electron and hole confinement and barrier layers
- Patent number 5,475,700
- Issue date Dec 12, 1995
- Monda & Associates
- Hiroshi Iwata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor metal contacting structure and a light emitting device
- Patent number 5,471,067
- Issue date Nov 28, 1995
- Sony Corporation
- Masao Ikeda
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Buried ridge II-VI laser diode
- Patent number 5,404,027
- Issue date Apr 4, 1995
- Minnesota Mining & Manufacturing Compay
- Michael A. Haase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Graded composition ohmic contact for P-type II-VI semiconductors
- Patent number 5,396,103
- Issue date Mar 7, 1995
- Minnesota Mining and Manufacturing Company
- Jun Oiu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Blue-green laser diode
- Patent number 5,291,507
- Issue date Mar 1, 1994
- Minnesota Mining and Manufacturing Company
- Michael A. Haase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ohmic contact for p-type group II-IV compound semiconductors
- Patent number 5,274,269
- Issue date Dec 28, 1993
- Minnesota Mining and Manufacturing Company
- James M. DePuydt
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Valance specific lanthanide doped optoelectronic metal fluoride sem...
- Patent number 5,248,890
- Issue date Sep 28, 1993
- Forschungszentrum Julich GmbH
- Hans Luth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an ohmic contact for p-type group II-VI compound...
- Patent number 5,213,998
- Issue date May 25, 1993
- Minnesota Mining and Manufacturing Company
- Jun Qiu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optical waveguide system comprising a rare-earth Si-based optical d...
- Patent number 5,107,538
- Issue date Apr 21, 1992
- AT&T Bell Laboratories
- Janet L. Benton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an atomic element doped semiconductor injecti...
- Patent number 5,045,498
- Issue date Sep 3, 1991
- Hewlett-Packard Company
- Shih-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Impurity-doped semiconductor laser device for single wavelength osc...
- Patent number 4,928,285
- Issue date May 22, 1990
- Kabushiki Kaisha Toshiba
- Mitsuhiro Kushibe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulation doped radiation emitting semiconductor device
- Patent number 4,905,059
- Issue date Feb 27, 1990
- Regents of the University of Minnesota
- Michael Shur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electro-optical semiconductor device and a method of emitting light
- Patent number 4,821,274
- Issue date Apr 11, 1989
- Centre National de la Recherche Scientifique
- Claude Naud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices employing Ti-doped Group III-V epitaxial layer
- Patent number 4,774,554
- Issue date Sep 27, 1988
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Andrew G. Dentai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rare earth doped semiconductor laser
- Patent number 4,737,960
- Issue date Apr 12, 1988
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Won-Tien Tsang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Far-infrared electromagnetic wave generator
- Patent number 4,571,727
- Issue date Feb 18, 1986
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mode stabilized semiconductor laser
- Patent number 4,305,048
- Issue date Dec 8, 1981
- Bell Telephone Laboratories, Incorporated
- John A. Copeland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trap doped laser combined with photodetector
- Patent number 4,300,107
- Issue date Nov 10, 1981
- Bell Telephone Laboratories, Incorporated
- John A. Copeland
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Rare earth semiconductor laser
- Patent number 4,193,044
- Issue date Mar 11, 1980
- The United States of America as represented by the Secretary of the Army
- Clyde A. Morrison
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR LAYER STACK AND METHOD FOR PRODUCING SAME
- Publication number 20220368110
- Publication date Nov 17, 2022
- OTTO-VON-GUERICKE-UNIVERSITAET MAGDEBURG
- Armin DADGAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrically Pumped Broadly Tunable Mid-Infrared Lasers based on Qu...
- Publication number 20090304034
- Publication date Dec 10, 2009
- Sergey B. Mirov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHODS FOR OPTICAL AMPLIFICATION IN SEMICONDUCTORS
- Publication number 20090168151
- Publication date Jul 2, 2009
- Ramot at Tel Aviv University Ltd.
- Shlomo Ruschin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and method for optical amplification in semiconductors
- Publication number 20070041086
- Publication date Feb 22, 2007
- Shlomo Ruschin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circular polarization spin semiconductor laser using magnetic semic...
- Publication number 20050117617
- Publication date Jun 2, 2005
- Hiroshi Yoshida
- B82 - NANO-TECHNOLOGY
Information Patent Application
Use of deep-level transitions in semiconductor devices
- Publication number 20050056864
- Publication date Mar 17, 2005
- Janet L. Pan
- H01 - BASIC ELECTRIC ELEMENTS

deep levels

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor layer stack and method for producing same

Semiconductor layer stack and method for producing same

Electrically pumped broadly tunable mid-infrared lasers based on qu...

Apparatus and methods for optical amplification in semiconductors

Apparatus and method for optical amplification in indirect-gap semi...

Circular polarization spin semiconductor laser using magnetic semic...

Use of deep-level transitions in semiconductor devices

Semiconductor device for electro-optic applications, method for man...

Method for making a semiconductor device

Method of fabricating a buried-ridge II-VI laser diode

Blue-green laser diode

Laser diode with electron and hole confinement and barrier layers

Semiconductor metal contacting structure and a light emitting device

Buried ridge II-VI laser diode

Graded composition ohmic contact for P-type II-VI semiconductors

Blue-green laser diode

Ohmic contact for p-type group II-IV compound semiconductors

Valance specific lanthanide doped optoelectronic metal fluoride sem...

Method for making an ohmic contact for p-type group II-VI compound...

Optical waveguide system comprising a rare-earth Si-based optical d...

Method of fabricating an atomic element doped semiconductor injecti...

Impurity-doped semiconductor laser device for single wavelength osc...

Modulation doped radiation emitting semiconductor device

Electro-optical semiconductor device and a method of emitting light

Semiconductor devices employing Ti-doped Group III-V epitaxial layer

Rare earth doped semiconductor laser

Far-infrared electromagnetic wave generator

Mode stabilized semiconductor laser

Trap doped laser combined with photodetector

Rare earth semiconductor laser

Patents Applicationslast 30 patents

SEMICONDUCTOR LAYER STACK AND METHOD FOR PRODUCING SAME

Electrically Pumped Broadly Tunable Mid-Infrared Lasers based on Qu...

APPARATUS AND METHODS FOR OPTICAL AMPLIFICATION IN SEMICONDUCTORS

Apparatus and method for optical amplification in semiconductors

Circular polarization spin semiconductor laser using magnetic semic...

Use of deep-level transitions in semiconductor devices