"Metalorganic Vapor Phase Epitaxy of Low-Resistivity P-Type ZnSe", Yasuda et al., Appl. Phys. Lett. vol. 52, p. 57-59 (1988). |
"P-Type ZnSe by Nitrogen Atom Beam Doping During Molecular Beam Epitaxial Growth", Park et al., Appl. Phys. Lett., vol. 57, pp. 2127-2129 (1990). |
"Low-Temperature Growth of ZnSe by Molecular Beam Epitaxy Using Cracked Selenium", Cheng et al., Appl. Phys. Lett., vol. 56, pp. 848-850 (1990). |
"Defects in Epitaxial Multilayers", Matthews et al., J. Crystal Growth, vol. 27, pp. 118-125 (1974). |
"Molecular Beam Epitaxy of CdSe and the Derivative Alloys Zn.sub.1-x Cd.sub.x Se and Cd.sub.1-x Mn.sub.x Se," Samarth et al., J. Electronic Materials, vol. 19, 543-547 (1990). |
"Optimum Composition in MBE-ZnS.sub.x Se.sub.1-x /GaAs for High Quality Hetero-epitaxial Growth", Matsumura et al., J. Crystal Growth, vol. 99, pp. 446-450 (1990). |
"Electron Beam Pumped Lasing in ZnSe Grown by Molecular Beam Epitaxy", Potts et al., Appl. Phys. Lett. vol. 50, p. 7 (1987). |
"Physics of Semiconductor Devices", Sze, 2nd ed. pp. 681-742 (1981). |
Haase et al., "Low-threshold buried-ridge II-VI laser diodes," Applied Physics Letters 63 No. 17, (Oct. 1993) pp. 2315-2317. |
"Molecular-Beam Epitaxy Growth of ZnSe Using a Cracked Selenium Source" Cheng et al., J. Voc. Sc. Tech., vol B8., pp. 181-186 (1990). |
"Growth of P-and N-Type ZnSe By Molecular Beam Epitaxy", Cheng et al., J. Crystal Growth, vol. 95, pp. 512-516 (1989). |
"Laser Action in the blue-green from optically pumped (Zn,Cd)Se/ZnSe single quantum well structures", Ding et al., Appl. Phys. Lett., vol. 57, pp. 2756-2758 (1990). |
"Electron Beam Pumped II-VI Lasers", Colak et al., J. Crystal Growth, vol. 72, pp. 504-511 (1985). |
"Short Wavelength II-VI Laser Diodes", Haase et al., Inst. Phys. Conf. Ser. No. 120: Chapter 1 (1992). |
"Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn.sub.0.80 Cd.sub.0.20 Se-ZnS.sub.0.08 Se.sub.0.92 Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy", Kawakami et al., Japanese Journal of Applied Physics, vol. 30, pp. L-605-607. |
"Pseudomorphic In.sub.y Ga.sub.1-y As/GaAs/Al.sub.x Ga.sub.1-x As Single Quantum Well Surface-Emitting Lasers With Integrated 45.degree. Beam Deflectors", Kim et al., Appl. Phys. Lett., vol. 58, pp. 7-9. |
"Blue-Green Laser Diodes", Haase et al., Appl. Phys. Lett. vol. 59, pp. 1272-1274. |
Toshihisa Tsukada, GaAs-Ga.sub.1-x Al.sub.1 As buried-heterostructure injection lasers, J. Appl. Physics, vol. 45 pp. 4899-4906 (Nov. 1974). |
Salokave et al., "Continuous-wave, room temperature, ridge waveguide green-blue diode laser", Electronics Letters, 9 Dec. 1993, vol. 29 No. 25, pp. 2192-2194. |