Delta-doping

Industry

CPC
H01L21/02584

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02584Delta-doping

Industries

Patents Grantslast 30 patents

Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transistors with enhanced dopant profile and methods for forming th...
- Patent number 11,837,667
- Issue date Dec 5, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Min-Kun Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solar cell and solar cell module
- Patent number 11,398,574
- Issue date Jul 26, 2022
- Panasonic Holdings Corporation
- Kazunori Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor substrate
- Patent number 11,158,503
- Issue date Oct 26, 2021
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming oxygen inserted Si-layers in power semiconductor...
- Patent number 11,031,466
- Issue date Jun 8, 2021
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for dopant activation using microwave radiation
- Patent number 10,923,355
- Issue date Feb 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate, semiconductor device, and method f...
- Patent number 10,818,757
- Issue date Oct 27, 2020
- SCIOCS COMPANY LIMITED
- Yoshinobu Narita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-N junction based devices with single species impurity for P-type...
- Patent number 10,777,645
- Issue date Sep 15, 2020
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers for reduced substrate dopant outdiffusion...
- Patent number 10,741,638
- Issue date Aug 11, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride tunnel junction with modified P-N interface
- Patent number 10,685,835
- Issue date Jun 16, 2020
- The Regents of the University of California
- Benjamin P. Yonkee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor substrate and method of manufacturing...
- Patent number 10,615,031
- Issue date Apr 7, 2020
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
P-N junction based devices with single species impurity for P-type...
- Patent number 10,615,261
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for substrate wafer back side and edge cross sect...
- Patent number 10,546,750
- Issue date Jan 28, 2020
- Vishay Siliconix
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for dopant activation using microwave radiation
- Patent number 10,522,356
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hsiung Tsai
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Quantum doping method and use in fabrication of nanoscale electroni...
- Patent number 10,510,876
- Issue date Dec 17, 2019
- Anatoly Feygenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 10,510,833
- Issue date Dec 17, 2019
- Toyoda Gosei Co., Ltd.
- Takaki Niwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing diamond substrates for CVD nanometric delta doping
- Patent number 10,468,246
- Issue date Nov 5, 2019
- Euclid Techlabs, LLC
- James E Butler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-N junction based devices with single species impurity for P-type...
- Patent number 10,411,101
- Issue date Sep 10, 2019
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ga2O3-based crystal film, and crystal multilayer structure
- Patent number 10,358,742
- Issue date Jul 23, 2019
- Tamura Corporation
- Kohei Sasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High mobility transport layer structures for rhombohedral Si/Ge/SiG...
- Patent number 10,256,305
- Issue date Apr 9, 2019
- The United States of America as represented by the Administrator of NASA
- Sang Hyouk Choi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Hardmask composition and method of forming patterning by using the...
- Patent number 10,153,163
- Issue date Dec 11, 2018
- Samsung Electronics Co., Ltd.
- Hyeonjin Shin
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
Group III-V device structure with variable impurity concentration
- Patent number 10,084,047
- Issue date Sep 25, 2018
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial silicon wafer
- Patent number 10,020,203
- Issue date Jul 10, 2018
- Sumco Corporation
- Yasuo Koike
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low-temperature selective epitaxial growth of silicon for device in...
- Patent number 10,011,920
- Issue date Jul 3, 2018
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 10,008,565
- Issue date Jun 26, 2018
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structure with self-aligned wells and multiple channe...
- Patent number 9,953,872
- Issue date Apr 24, 2018
- GLOBALFOUNDRIES Inc.
- David P. Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunneling field effect transistors and transistor circuitry employi...
- Patent number 9,941,117
- Issue date Apr 10, 2018
- OHIO STATE INNOVATION FOUNDATION
- Paul R. Berger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a three-dimensional memory device having a heteros...
- Patent number 9,941,295
- Issue date Apr 10, 2018
- SanDisk Technologies LLC
- Peter Rabkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CVD reactor and method for nanometric delta doping of diamond
- Patent number 9,922,823
- Issue date Mar 20, 2018
- Euclid Techlabs, LLC
- James E Butler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TFT substrate structure and manufacturing method thereof
- Patent number 9,882,055
- Issue date Jan 30, 2018
- Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Yue Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
- Publication number 20240274671
- Publication date Aug 15, 2024
- Resonac Corporation
- Naoto ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY DEVICES, SILICON CARBIDE HOMOEPITAXIAL SUBSTRATES A...
- Publication number 20230121332
- Publication date Apr 20, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
- Publication number 20220149160
- Publication date May 12, 2022
- SHOWA DENKO K.K.
- Naoto ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Oxygen Inserted Si-Layers in Power Semiconductor...
- Publication number 20200303498
- Publication date Sep 24, 2020
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20200219723
- Publication date Jul 9, 2020
- Fuji Electric Co., Ltd.
- Fumikazu IMAI
- C30 - CRYSTAL GROWTH
Information Patent Application
P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE...
- Publication number 20200161436
- Publication date May 21, 2020
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Systems for Dopant Activation Using Microwave Radiation
- Publication number 20200135468
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- CHUN-HSIUNG TSAI
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD F...
- Publication number 20200127101
- Publication date Apr 23, 2020
- SCIOCS COMPANY LIMITED
- Yoshinobu NARITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Inserted Si-Layers for Reduced Substrate Dopant Outdiffusion...
- Publication number 20200052066
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE...
- Publication number 20200035793
- Publication date Jan 30, 2020
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20190096991
- Publication date Mar 28, 2019
- Toyoda Gosei Co., Ltd.
- Takaki Niwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TUNNEL JUNCTION WITH MODIFIED P-N INTERFACE
- Publication number 20180374699
- Publication date Dec 27, 2018
- The Regents of the University of California
- Benjamin P. Yonkee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE IN...
- Publication number 20180258549
- Publication date Sep 13, 2018
- International Business Machines Corporation
- BAHMAN HEKMATSHOAR-TABARI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON WAFER
- Publication number 20180197751
- Publication date Jul 12, 2018
- SUMCO CORPORATION
- Yasuo KOIKE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PREPARING DIAMOND SUBSTRATES FOR CVD NANOMETRIC DELTA DOPING
- Publication number 20180174834
- Publication date Jun 21, 2018
- Euclid TechLabs, LLC
- James E Butler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quantum Doping Method and Use in Fabrication of Nanoscale Electroni...
- Publication number 20180174842
- Publication date Jun 21, 2018
- Anatoly Feygenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Device Structure with Variable Impurity Concentration
- Publication number 20180097072
- Publication date Apr 5, 2018
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CVD REACTOR AND METHOD FOR NANOMETRIC DELTA DOPING OF DIAMOND
- Publication number 20180068850
- Publication date Mar 8, 2018
- Euclid TechLabs, LLC
- James E Butler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING...
- Publication number 20180040480
- Publication date Feb 8, 2018
- Fuji Electric Co., Ltd.
- Fumikazu IMAI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SELF-ALIGNED WELLS AND MULTIPLE CHANNE...
- Publication number 20180012805
- Publication date Jan 11, 2018
- GLOBALFOUDRIES INC.
- David P. Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GROWING Ga2O3-BASED CRYSTAL FILM, AND CRYSTAL MULTILAYER...
- Publication number 20170350037
- Publication date Dec 7, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
NANOSCALE WIRES WITH TIP-LOCALIZED JUNCTIONS
- Publication number 20170352542
- Publication date Dec 7, 2017
- President and Fellows of Harvard College
- Charles M. Lieber
- B82 - NANO-TECHNOLOGY
Information Patent Application
TFT SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20170271524
- Publication date Sep 21, 2017
- Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Yue Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20170186870
- Publication date Jun 29, 2017
- SK hynix Inc.
- Oh-Hyun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-ETCH GAS COOLED EPITAXIAL STACK FOR GROUP IIIA-N DEVICES
- Publication number 20170186859
- Publication date Jun 29, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Asad Mahmood HAIDER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiG...
- Publication number 20170179233
- Publication date Jun 22, 2017
- USA as represented by the Administrator of the National Aeronautics and Space...
- Sang Hyouk Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Device Structure Having a Selectively Reduced Impurity...
- Publication number 20170141192
- Publication date May 18, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TFT SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20170141236
- Publication date May 18, 2017
- Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Yue Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20170092493
- Publication date Mar 30, 2017
- Toyoda Gosei Co., Ltd.
- Takaki NIWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE IN...
- Publication number 20170081781
- Publication date Mar 23, 2017
- International Business Machines Corporation
- BAHMAN HEKMATSHOAR-TABARI
- C30 - CRYSTAL GROWTH

Delta-doping

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Transistors with enhanced dopant profile and methods for forming th...

Solar cell and solar cell module

Silicon carbide semiconductor substrate

Method of forming oxygen inserted Si-layers in power semiconductor...

Methods and systems for dopant activation using microwave radiation

Nitride semiconductor substrate, semiconductor device, and method f...

P-N junction based devices with single species impurity for P-type...

Oxygen inserted Si-layers for reduced substrate dopant outdiffusion...

III-nitride tunnel junction with modified P-N interface

Silicon carbide semiconductor substrate and method of manufacturing...

P-N junction based devices with single species impurity for P-type...

System and method for substrate wafer back side and edge cross sect...

Methods and systems for dopant activation using microwave radiation

Quantum doping method and use in fabrication of nanoscale electroni...

Method for manufacturing semiconductor device

Method of preparing diamond substrates for CVD nanometric delta doping

P-N junction based devices with single species impurity for P-type...

Ga2O3-based crystal film, and crystal multilayer structure

High mobility transport layer structures for rhombohedral Si/Ge/SiG...

Hardmask composition and method of forming patterning by using the...

Group III-V device structure with variable impurity concentration

Epitaxial silicon wafer

Low-temperature selective epitaxial growth of silicon for device in...

Semiconductor devices with germanium-rich active layers and doped t...

Semiconductor structure with self-aligned wells and multiple channe...

Tunneling field effect transistors and transistor circuitry employi...

Method of making a three-dimensional memory device having a heteros...

CVD reactor and method for nanometric delta doping of diamond

TFT substrate structure and manufacturing method thereof

Patents Applicationslast 30 patents

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

RADIO FREQUENCY DEVICES, SILICON CARBIDE HOMOEPITAXIAL SUBSTRATES A...

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

Method of Forming Oxygen Inserted Si-Layers in Power Semiconductor...

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE

P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE...

Methods and Systems for Dopant Activation Using Microwave Radiation

NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD F...

Oxygen Inserted Si-Layers for Reduced Substrate Dopant Outdiffusion...

P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

III-NITRIDE TUNNEL JUNCTION WITH MODIFIED P-N INTERFACE

LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE IN...

EPITAXIAL SILICON WAFER

METHOD OF PREPARING DIAMOND SUBSTRATES FOR CVD NANOMETRIC DELTA DOPING

Quantum Doping Method and Use in Fabrication of Nanoscale Electroni...

Group III-V Device Structure with Variable Impurity Concentration

CVD REACTOR AND METHOD FOR NANOMETRIC DELTA DOPING OF DIAMOND

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING...

SEMICONDUCTOR STRUCTURE WITH SELF-ALIGNED WELLS AND MULTIPLE CHANNE...

METHOD OF GROWING Ga2O3-BASED CRYSTAL FILM, AND CRYSTAL MULTILAYER...

NANOSCALE WIRES WITH TIP-LOCALIZED JUNCTIONS

TFT SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

NON-ETCH GAS COOLED EPITAXIAL STACK FOR GROUP IIIA-N DEVICES

High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiG...

Group III-V Device Structure Having a Selectively Reduced Impurity...

TFT SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE IN...