Diffusion-deposition

Industry

CPC
Y10S148/037

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/037Diffusion-deposition

Industries

Patents Grantslast 30 patents

Information Patent Grant
Doping process for producing homojunctions in semiconductor substrates
- Patent number 6,232,207
- Issue date May 15, 2001
- Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung E.V.
- Roland Schindler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating integrated circuits with oxidized isolation
- Patent number 6,093,620
- Issue date Jul 25, 2000
- National Semiconductor Corporation
- Douglas L. Peltzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping method of barrier region in semiconductor device
- Patent number 5,338,697
- Issue date Aug 16, 1994
- Seiko Instruments Inc.
- Kenji Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming shallow junctions
- Patent number 5,183,777
- Issue date Feb 2, 1993
- Fujitsu Limited
- Masahiko Doki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of boron diffusion into semiconductor wafers having reduced...
- Patent number 5,171,708
- Issue date Dec 15, 1992
- Shin-Etsu Handotai Co., Ltd.
- Masatake Katayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing doped semiconductor layers
- Patent number 5,162,256
- Issue date Nov 10, 1992
- Aixtron GmbH
- Holger Jurgensen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion using a solid state source
- Patent number 5,126,281
- Issue date Jun 30, 1992
- Hewlett-Packard Company
- Kent A. W. Carey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device having a disordered supe...
- Patent number 5,108,948
- Issue date Apr 28, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Murakami
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a semiconductor integrated circuit device c...
- Patent number 4,965,220
- Issue date Oct 23, 1990
- Kabushiki Kaisha Toshiba
- Hiroshi Iwasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor light emitting device using out-di...
- Patent number 4,960,730
- Issue date Oct 2, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Syoichi Kakimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making a bipolar integrated circuit
- Patent number 4,902,633
- Issue date Feb 20, 1990
- Motorola, Inc.
- Bertrand F. Cambou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device
- Patent number 4,888,782
- Issue date Dec 19, 1989
- Mitsubishi Denki Kabushiki Kaisha
- Syoichi Kakimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of sensitizing Pb-salt epitaxial films for schottky diodes
- Patent number 4,853,339
- Issue date Aug 1, 1989
- The United States of America as represented by the Secretary of the Navy
- Tak-Kin Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of introducing impurity species into a semiconductor structu...
- Patent number 4,824,798
- Issue date Apr 25, 1989
- Xerox Corporation
- Robert D. Burnham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a BiCMOS device
- Patent number 4,818,720
- Issue date Apr 4, 1989
- Kabushiki Kaisha Toshiba
- Hiroshi Iwasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with thermally oxidized insulating and arsenic...
- Patent number 4,746,377
- Issue date May 24, 1988
- Mitsubishi Denki Kabushiki Kaisha
- Kiyoteru Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal redistribution by rapid thermal processing
- Patent number 4,717,588
- Issue date Jan 5, 1988
- Motorola Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subcollector for oxide and junction isolated IC's
- Patent number 4,644,383
- Issue date Feb 17, 1987
- Harris Corporation
- Osman E. Akcasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for minimizing autodoping during epitaxial deposition utiliz...
- Patent number 4,571,275
- Issue date Feb 18, 1986
- International Business Machines Corporation
- Tor W. Moksvold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor structures having an oxidized...
- Patent number 4,532,700
- Issue date Aug 6, 1985
- International Business Machines Corporation
- Wayne I. Kinney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the formation of buried gates of a semiconductor device...
- Patent number 4,528,745
- Issue date Jul 16, 1985
- Toyo Denki Seizo Kabushiki Kaisha
- Kimihiro Muraoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial method of fabricating single IGFET memory cell with burie...
- Patent number 4,105,475
- Issue date Aug 8, 1978
- American Microsystems, Inc.
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of gettering using backside polycrystalline silicon
- Patent number 4,053,335
- Issue date Oct 11, 1977
- International Business Machines Corporation
- Shih-Ming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor integrated circuit device h...
- Patent number 4,053,336
- Issue date Oct 11, 1977
- Ferranti Limited
- David Latham Grundy
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 4,009,057
- Issue date Feb 22, 1977
- U.S. Philips Corporation
- Michel DE Brebisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single IGFET memory cell with buried storage element
- Patent number 4,003,036
- Issue date Jan 11, 1977
- American Micro-Systems, Inc.
- Fredrick Benjamin Jenne
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming electrically-isolated regions in integrated circ...
- Patent number 3,998,673
- Issue date Dec 21, 1976
- Pel Chow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having an insulation...
- Patent number 3,996,077
- Issue date Dec 7, 1976
- U.S. Philips Corporation
- Wilhelmus Henricus Cornelis Gerardus Verkuijlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined method for fabricating oxide-isolated vertical bipolar tra...
- Patent number 3,993,513
- Issue date Nov 23, 1976
- Fairchild Camera and Instrument Corporation
- David O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an integrated circuit utilizing outdiffusio...
- Patent number 3,993,512
- Issue date Nov 23, 1976
- U.S. Philips Corporation
- Jean Encinas
- H01 - BASIC ELECTRIC ELEMENTS

Diffusion-deposition

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Doping process for producing homojunctions in semiconductor substrates

Method of fabricating integrated circuits with oxidized isolation

Doping method of barrier region in semiconductor device

Method of forming shallow junctions

Method of boron diffusion into semiconductor wafers having reduced...

Process for producing doped semiconductor layers

Diffusion using a solid state source

Method of producing a semiconductor device having a disordered supe...

Method of manufacturing a semiconductor integrated circuit device c...

Method of making a semiconductor light emitting device using out-di...

Process for making a bipolar integrated circuit

Semiconductor light emitting device

Method of sensitizing Pb-salt epitaxial films for schottky diodes

Method of introducing impurity species into a semiconductor structu...

Method for manufacturing a BiCMOS device

Semiconductor device with thermally oxidized insulating and arsenic...

Metal redistribution by rapid thermal processing

Subcollector for oxide and junction isolated IC's

Method for minimizing autodoping during epitaxial deposition utiliz...

Method of manufacturing semiconductor structures having an oxidized...

Method for the formation of buried gates of a semiconductor device...

Epitaxial method of fabricating single IGFET memory cell with burie...

Method of gettering using backside polycrystalline silicon

Method of manufacturing a semiconductor integrated circuit device h...

Method of manufacturing a semiconductor device

Single IGFET memory cell with buried storage element

Method for forming electrically-isolated regions in integrated circ...

Method of manufacturing a semiconductor device having an insulation...

Combined method for fabricating oxide-isolated vertical bipolar tra...

Method of manufacturing an integrated circuit utilizing outdiffusio...