Diffusion into or out of AIIIBV compounds

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H01L21/2258

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/2258Diffusion into or out of AIIIBV compounds

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,262,554
- Issue date Mar 25, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 12,249,544
- Issue date Mar 11, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 12,245,442
- Issue date Mar 4, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Field assisted interfacial diffusion doping through heterostructure...
- Patent number 12,142,642
- Issue date Nov 12, 2024
- Lawrence Livermore National Security, LLC
- Joel Basile Varley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor component comprising performin...
- Patent number 11,915,935
- Issue date Feb 27, 2024
- Osram Opto Semiconductors GmbH
- Andreas Biebersdorf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for diffusing magnesium in gallium nitride materi...
- Patent number 11,881,404
- Issue date Jan 23, 2024
- QROMIS, Inc.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for thermally processing a substrate and associated system
- Patent number 11,664,246
- Issue date May 30, 2023
- LASER SYSTEMS & SOLUTIONS OF EUROPE
- Fulvio Mazzamuto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming fluorine doped high electron mobility transisto...
- Patent number 11,545,567
- Issue date Jan 3, 2023
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of an HEMT transistor of the normally off type...
- Patent number 11,538,922
- Issue date Dec 27, 2022
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride based semiconductor device and manufacturing method...
- Patent number 11,257,676
- Issue date Feb 22, 2022
- Fuji Electric Co., Ltd.
- Hideaki Matsuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing ohmic contact electrode of gallium nitride-bas...
- Patent number 11,239,081
- Issue date Feb 1, 2022
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS
- Yongliang Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 11,217,493
- Issue date Jan 4, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device including stressed source/drain, method of man...
- Patent number 11,195,765
- Issue date Dec 7, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Doped aluminum nitride crystals and methods of making them
- Patent number 11,183,567
- Issue date Nov 23, 2021
- Crystal IS, Inc.
- Glen A. Slack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same, and electro...
- Patent number 11,158,547
- Issue date Oct 26, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gallidation assisted impurity doping
- Patent number 10,930,506
- Issue date Feb 23, 2021
- Lawrence Livermore National Security, LLC
- Lars Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 10,910,278
- Issue date Feb 2, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Manufacturing method of an HEMT transistor of the normally off type...
- Patent number 10,896,969
- Issue date Jan 19, 2021
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-state device based on ion trapping
- Patent number 10,886,124
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Ning Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing semiconductor device and edge termination...
- Patent number 10,879,349
- Issue date Dec 29, 2020
- TOYODA GOSET CO., LTD.
- Tohru Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor structure
- Patent number 10,868,135
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Ju Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implanted dopant activation for wide bandgap semiconductor electronics
- Patent number 10,854,457
- Issue date Dec 1, 2020
- The Government of the United States of America, as represented by the Secreta...
- Boris N. Feigelson
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 10,847,653
- Issue date Nov 24, 2020
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,832,911
- Issue date Nov 10, 2020
- Toyoda Gosei Co., Ltd.
- Nariaki Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and method with high concentration do...
- Patent number 10,804,358
- Issue date Oct 13, 2020
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with fluorinated region and methods for formi...
- Patent number 10,804,385
- Issue date Oct 13, 2020
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 10,714,398
- Issue date Jul 14, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Doped aluminum nitride crystals and methods of making them
- Patent number 10,692,980
- Issue date Jun 23, 2020
- Crystal IS, Inc.
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Grant
IC unit and method of manufacturing the same, and electronic device...
- Patent number 10,643,905
- Issue date May 5, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
IC unit and methond of manufacturing the same, and electronic devic...
- Patent number 10,629,498
- Issue date Apr 21, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
FIELD ASSISTED INTERFACIAL DIFFUSION DOPING THROUGH HETEROSTRUCTURE...
- Publication number 20250031425
- Publication date Jan 23, 2025
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Joel Basile Varley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING P-TYPE NITRIDE SEMICONDUCTOR
- Publication number 20240379362
- Publication date Nov 14, 2024
- Sumitomo Electric Industries, Ltd.
- Kei FUJII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240355887
- Publication date Oct 24, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240313089
- Publication date Sep 19, 2024
- Fuji Electric Co., Ltd.
- Ryo TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240243185
- Publication date Jul 18, 2024
- United Microelectronics Corp.
- Huan Chi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED GAN HEMT RADIO-FREQUENCY DEVICE AND MANUFACTURING METHOD T...
- Publication number 20240178313
- Publication date May 30, 2024
- SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Guoqiang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure and Method for Manufacturing the Same
- Publication number 20240162283
- Publication date May 16, 2024
- ENKRIS SEMICONDUCTOR (WUXI), LTD.
- Weihua LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Area Diffusion Doping of III-N Materials
- Publication number 20240120201
- Publication date Apr 11, 2024
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF
- Publication number 20240063257
- Publication date Feb 22, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng XIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION DEVICES FORMED BY FIELD ASSISTED DIFFUSION OF DOPANTS
- Publication number 20240047516
- Publication date Feb 8, 2024
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Vincenzo Lordi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240047527
- Publication date Feb 8, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230144657
- Publication date May 11, 2023
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATE, METHOD FOR MANUFACTURING LAMINATE, AND METHOD FOR MANUFAC...
- Publication number 20230011185
- Publication date Jan 12, 2023
- Tokyo Ohka Kogyo Co., Ltd.
- Keisuke KUBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR D...
- Publication number 20220359196
- Publication date Nov 10, 2022
- KYOCERA CORPORATION
- Katsunori AZUMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT COMPRISING PERFORMIN...
- Publication number 20210351037
- Publication date Nov 11, 2021
- Osram Opto Semiconductors GmbH
- Andreas BIEBERSDORF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD ASSISTED INTERFACIAL DIFFUSION DOPING THROUGH HETEROSTRUCTURE...
- Publication number 20210257463
- Publication date Aug 19, 2021
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Joel Basile Varley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DIFFUSING MAGNESIUM IN GALLIUM NITRIDE MATERI...
- Publication number 20210249269
- Publication date Aug 12, 2021
- QROMIS, Inc.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF AN HEMT TRANSISTOR OF THE NORMALLY OFF TYPE...
- Publication number 20210091205
- Publication date Mar 25, 2021
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING OHMIC CONTACT ELECTRODE OF GALLIUM NITRIDE-BAS...
- Publication number 20210057221
- Publication date Feb 25, 2021
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yongliang TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20200381544
- Publication date Dec 3, 2020
- Vanguard International Semiconductor Corporation
- Chih-Yen CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM
- Publication number 20200350411
- Publication date Nov 5, 2020
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20200212212
- Publication date Jul 2, 2020
- Vanguard International Semiconductor Corporation
- Chih-Yen CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STATE DEVICE BASED ON ION TRAPPING
- Publication number 20200152454
- Publication date May 14, 2020
- International Business Machines Corporation
- Ning Li
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200098565
- Publication date Mar 26, 2020
- Toyoda Gosei Co., Ltd.
- Nariaki Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIDATION ASSISTED IMPURITY DOPING
- Publication number 20190393038
- Publication date Dec 26, 2019
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Lars Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implanted Dopant Activation for Wide Bandgap Semiconductor Electronics
- Publication number 20190341261
- Publication date Nov 7, 2019
- The Government of the United States of America, as represented by the Secreta...
- Boris N. Feigelson
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
IC UNIT AND METHOND OF MANUFACTURING THE SAME, AND ELECTRONIC DEVIC...
- Publication number 20190287865
- Publication date Sep 19, 2019
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Application
MANUFACTURING METHOD OF AN HEMT TRANSISTOR OF THE NORMALLY OFF TYPE...
- Publication number 20190229203
- Publication date Jul 25, 2019
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20190189746
- Publication date Jun 20, 2019
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STATE DEVICE BASED ON ION TRAPPING
- Publication number 20190164750
- Publication date May 30, 2019
- International Business Machines Corporation
- Ning Li
- G11 - INFORMATION STORAGE

Diffusion into or out of AIIIBV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and manufacturing method thereof

Semiconductor device, method of manufacturing the same and electron...

Semiconductor device, method of manufacturing the same and electron...

Field assisted interfacial diffusion doping through heterostructure...

Method for producing a semiconductor component comprising performin...

Method and system for diffusing magnesium in gallium nitride materi...

Method for thermally processing a substrate and associated system

Methods for forming fluorine doped high electron mobility transisto...

Manufacturing method of an HEMT transistor of the normally off type...

Gallium nitride based semiconductor device and manufacturing method...

Method for preparing ohmic contact electrode of gallium nitride-bas...

Semiconductor device, method of manufacturing the same and electron...

Semiconductor device including stressed source/drain, method of man...

Doped aluminum nitride crystals and methods of making them

Semiconductor device, method of manufacturing the same, and electro...

Gallidation assisted impurity doping

Semiconductor device, method of manufacturing the same and electron...

Manufacturing method of an HEMT transistor of the normally off type...

Multi-state device based on ion trapping

Method for manufacturing semiconductor device and edge termination...

High electron mobility transistor structure

Implanted dopant activation for wide bandgap semiconductor electronics

Semiconductor device having metallic source and drain regions

Semiconductor device

Compound semiconductor device and method with high concentration do...

Semiconductor devices with fluorinated region and methods for formi...

Semiconductor device, method of manufacturing the same and electron...

Doped aluminum nitride crystals and methods of making them

IC unit and method of manufacturing the same, and electronic device...

IC unit and methond of manufacturing the same, and electronic devic...

Patents Applicationslast 30 patents

FIELD ASSISTED INTERFACIAL DIFFUSION DOPING THROUGH HETEROSTRUCTURE...

METHOD OF PRODUCING P-TYPE NITRIDE SEMICONDUCTOR

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

ENHANCED GAN HEMT RADIO-FREQUENCY DEVICE AND MANUFACTURING METHOD T...

Semiconductor Structure and Method for Manufacturing the Same

Selective Area Diffusion Doping of III-N Materials

SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF

SUPERJUNCTION DEVICES FORMED BY FIELD ASSISTED DIFFUSION OF DOPANTS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

LAMINATE, METHOD FOR MANUFACTURING LAMINATE, AND METHOD FOR MANUFAC...

METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR D...

METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT COMPRISING PERFORMIN...

FIELD ASSISTED INTERFACIAL DIFFUSION DOPING THROUGH HETEROSTRUCTURE...

METHOD AND SYSTEM FOR DIFFUSING MAGNESIUM IN GALLIUM NITRIDE MATERI...

MANUFACTURING METHOD OF AN HEMT TRANSISTOR OF THE NORMALLY OFF TYPE...

METHOD FOR PREPARING OHMIC CONTACT ELECTRODE OF GALLIUM NITRIDE-BAS...

SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME

DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM

SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME

MULTI-STATE DEVICE BASED ON ION TRAPPING

SEMICONDUCTOR DEVICE

GALLIDATION ASSISTED IMPURITY DOPING

Implanted Dopant Activation for Wide Bandgap Semiconductor Electronics

IC UNIT AND METHOND OF MANUFACTURING THE SAME, AND ELECTRONIC DEVIC...

MANUFACTURING METHOD OF AN HEMT TRANSISTOR OF THE NORMALLY OFF TYPE...

COMPOUND SEMICONDUCTOR DEVICE AND METHOD

MULTI-STATE DEVICE BASED ON ION TRAPPING