Diffusion of boron or silicon

Industry

CPC
Y10S148/034

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/034Diffusion of boron or silicon

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of producing a bipolar transistor
- Patent number 5,925,574
- Issue date Jul 20, 1999
- Seiko Instruments Inc.
- Kenji Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping, semiconductor device, and method of fabricating s...
- Patent number 5,557,141
- Issue date Sep 17, 1996
- Sanyo Electric Co., Ltd.
- Yasoo Harada
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Germanium implant for use with ultra-shallow junctions
- Patent number 5,401,674
- Issue date Mar 28, 1995
- Advanced Micro Devices
- Mohammed Anjum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing CMOS transistor
- Patent number 5,366,922
- Issue date Nov 22, 1994
- Seiko Instruments Inc.
- Kenji Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping a group III-V compound semiconductor
- Patent number 5,350,709
- Issue date Sep 27, 1994
- Sanyo Electric Co., Ltd.
- Yasoo Harada
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transistor fabrication method
- Patent number 5,278,096
- Issue date Jan 11, 1994
- AT&T Bell Laboratories
- Kuo-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a doped region in a substrate
- Patent number 5,273,934
- Issue date Dec 28, 1993
- Siemens Aktiengesellschaft
- Karl Ehinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boronized sliding material and method for producing the same
- Patent number 5,242,741
- Issue date Sep 7, 1993
- Taiho Kogyo Co., Ltd.
- Eiji Sugiyama
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Process for diffusing boron into semiconductor wafers
- Patent number 5,208,185
- Issue date May 4, 1993
- Shin-Etsu Handotai Co., Ltd.
- Yoshiyuki Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of sputtering a mixture of hexagonal boron nitride and stain...
- Patent number 5,192,409
- Issue date Mar 9, 1993
- National Research Institute For Metals
- Masahiro Tosa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming shallow junctions
- Patent number 5,183,777
- Issue date Feb 2, 1993
- Fujitsu Limited
- Masahiko Doki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device process using diffusant penetration and source...
- Patent number 5,141,895
- Issue date Aug 25, 1992
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor structure including layer limiting silicon d...
- Patent number 5,119,150
- Issue date Jun 2, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor device contact including transition...
- Patent number 5,086,016
- Issue date Feb 4, 1992
- International Business Machines Corporation
- Stephen B. Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of diffusing silicon into compound semiconductors and compou...
- Patent number 5,047,366
- Issue date Sep 10, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous silicon thin film transistor
- Patent number 5,045,905
- Issue date Sep 3, 1991
- Nippon Precision Circuits Ltd.
- Noboru Motai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous silicon thin film transistor and method of manufacturing...
- Patent number 4,916,090
- Issue date Apr 10, 1990
- Nippon Precision Circuits Ltd.
- Noboru Motai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of introducing impurity species into a semiconductor structu...
- Patent number 4,824,798
- Issue date Apr 25, 1989
- Xerox Corporation
- Robert D. Burnham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for inhibiting dopant out-diffusion
- Patent number 4,640,004
- Issue date Feb 3, 1987
- Fairchild Camera & Instrument Corp.
- Michael E. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3902936
- Patent number 3,902,936
- Issue date Sep 2, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3499799
- Patent number 3,499,799
- Issue date Mar 10, 1970
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Diffusion of boron or silicon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of producing a bipolar transistor

Method of doping, semiconductor device, and method of fabricating s...

Germanium implant for use with ultra-shallow junctions

Method for producing CMOS transistor

Method of doping a group III-V compound semiconductor

Transistor fabrication method

Method for producing a doped region in a substrate

Boronized sliding material and method for producing the same

Process for diffusing boron into semiconductor wafers

Method of sputtering a mixture of hexagonal boron nitride and stain...

Method of forming shallow junctions

Semiconductor device process using diffusant penetration and source...

Compound semiconductor structure including layer limiting silicon d...

Method of making semiconductor device contact including transition...

Method of diffusing silicon into compound semiconductors and compou...

Amorphous silicon thin film transistor

Amorphous silicon thin film transistor and method of manufacturing...

Method of introducing impurity species into a semiconductor structu...

Method and structure for inhibiting dopant out-diffusion

3902936

3499799