directly from the gas state

Industry

CPC
C30B28/12

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B28/00Production of homogeneous polycrystalline material with defined structure

Current Industry

C30B28/12directly from the gas state

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Scintillator with fast decay time
- Patent number 11,573,338
- Issue date Feb 7, 2023
- Radiation Monitoring Devices, Inc.
- Vivek V. Nagarkar
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Component and semiconductor manufacturing device
- Patent number 11,111,573
- Issue date Sep 7, 2021
- Kyocera Corporation
- Takashi Hino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline SiC substrate and method for manufacturing same
- Patent number 10,934,634
- Issue date Mar 2, 2021
- SICOXS CORPORATION
- Kuniaki Yagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for carrying out phosphide in-situ injection synthesis by ca...
- Patent number 10,648,100
- Issue date May 12, 2020
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Niefeng Sun
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for epitaxial growth of monocrystalline silicon carbide usin...
- Patent number 9,725,822
- Issue date Aug 8, 2017
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Seed material for liquid phase epitaxial growth of monocrystalline...
- Patent number 9,447,517
- Issue date Sep 20, 2016
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for synthesizing ultrahigh-purity silicon carbide
- Patent number 9,388,509
- Issue date Jul 12, 2016
- II-VI Incorporated
- Ilya Zwieback
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Systems and methods for distributing gas in a chemical vapor deposi...
- Patent number 8,961,689
- Issue date Feb 24, 2015
- GTAT Corporation
- Wenjun Qin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of m...
- Patent number 8,540,817
- Issue date Sep 24, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for growing thin film
- Patent number 8,247,031
- Issue date Aug 21, 2012
- Korea Institute of Science and Technology
- Young Joon Baik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
PIEZOELECTRIC FILM, PIEZOELECTRIC STACK, PIEZOELECTRIC ELEMENT, AND...
- Publication number 20240206342
- Publication date Jun 20, 2024
- Sumitomo Chemical Company, Limited
- Toshiaki KURODA
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC POLYCRYSTAL MANUFACTURING METHOD
- Publication number 20230357955
- Publication date Nov 9, 2023
- KYOCERA CORPORATION
- Seiichirou ITOU
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW-DIMENSIONAL PEROVSKITE-STRUCTURED METAL HALIDE AND PREPARATION...
- Publication number 20230235219
- Publication date Jul 27, 2023
- SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES
- Yuntao WU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CARRYING OUT PHOSPHIDE IN-SITU INJECTION SYNTHESIS BY CA...
- Publication number 20200157704
- Publication date May 21, 2020
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Niefeng SUN
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYCRYSTALLINE SiC SUBSTRATE AND METHOD FOR MANUFACTURING SAME
- Publication number 20190153616
- Publication date May 23, 2019
- SICOXS CORPORATION
- Kuniaki YAGI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR USING SPUTTERING TARGET AND METHOD FOR FORMING OXIDE FILM
- Publication number 20140042014
- Publication date Feb 13, 2014
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"
- Publication number 20130309496
- Publication date Nov 21, 2013
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBI...
- Publication number 20130269596
- Publication date Oct 17, 2013
- TOYO TANSO CO., LTD
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE...
- Publication number 20130263774
- Publication date Oct 10, 2013
- TOYO TANSO CO., LTD
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GEMSTONES FROM SILICON CARBIDE
- Publication number 20120298092
- Publication date Nov 29, 2012
- Aleksandr V. Klishin
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR DISTRIBUTING GAS IN A CHEMICAL VAPOR DEPOSI...
- Publication number 20110129621
- Publication date Jun 2, 2011
- GT SOLAR, INCORPORATED
- Wenjun Qin
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF M...
- Publication number 20110039071
- Publication date Feb 17, 2011
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING THIN FILM
- Publication number 20090324824
- Publication date Dec 31, 2009
- Korea Institute of Science and Technology
- Young Joon BAIK
- C30 - CRYSTAL GROWTH

directly from the gas state

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nitride semiconductor template, method for manufacturing nitride se...

Scintillator with fast decay time

Component and semiconductor manufacturing device

Polycrystalline SiC substrate and method for manufacturing same

Method for carrying out phosphide in-situ injection synthesis by ca...

Method for epitaxial growth of monocrystalline silicon carbide usin...

Seed material for liquid phase epitaxial growth of monocrystalline...

Method for synthesizing ultrahigh-purity silicon carbide

Systems and methods for distributing gas in a chemical vapor deposi...

Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of m...

Method for growing thin film

Patents Applicationslast 30 patents

PIEZOELECTRIC FILM, PIEZOELECTRIC STACK, PIEZOELECTRIC ELEMENT, AND...

SiC POLYCRYSTAL MANUFACTURING METHOD

LOW-DIMENSIONAL PEROVSKITE-STRUCTURED METAL HALIDE AND PREPARATION...

METHOD FOR CARRYING OUT PHOSPHIDE IN-SITU INJECTION SYNTHESIS BY CA...

POLYCRYSTALLINE SiC SUBSTRATE AND METHOD FOR MANUFACTURING SAME

METHOD FOR USING SPUTTERING TARGET AND METHOD FOR FORMING OXIDE FILM

"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"

FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBI...

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE...

METHOD FOR PRODUCING GEMSTONES FROM SILICON CARBIDE

SYSTEMS AND METHODS FOR DISTRIBUTING GAS IN A CHEMICAL VAPOR DEPOSI...

METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF M...

METHOD FOR GROWING THIN FILM