DMOS transistors

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CPC
H01L29/7801

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7801DMOS transistors

Industries

Patents Grantslast 30 patents

Information Patent Grant
Power transistor cell and power transistor having field shielding c...
- Patent number 12,159,900
- Issue date Dec 3, 2024
- Robert Bosch GmbH
- Alberto Martinez-Limia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated trench gates with multiple layers for improved performanc...
- Patent number 12,142,660
- Issue date Nov 12, 2024
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with controllable channel length and manufactu...
- Patent number 12,132,048
- Issue date Oct 29, 2024
- SK keyfoundry Inc.
- Hyun Kwang Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with p-contact and doped insulation bloc...
- Patent number 11,949,006
- Issue date Apr 2, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method for designing same
- Patent number 11,929,402
- Issue date Mar 12, 2024
- Novel Crystal Technology, Inc.
- Tadashi Kase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and manufacturing method thereof
- Patent number 11,923,435
- Issue date Mar 5, 2024
- United Microelectronics Corp.
- Hsin-Han Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon structure including protective layer
- Patent number 11,855,086
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Shao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,854,926
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor
- Patent number 11,791,382
- Issue date Oct 17, 2023
- Tso-Tung Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with controllable channel length and manufactu...
- Patent number 11,764,216
- Issue date Sep 19, 2023
- KEY FOUNDRY CO., LTD.
- Hyun Kwang Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor with merged drift region
- Patent number 11,658,184
- Issue date May 23, 2023
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor protection circuit
- Patent number 11,600,993
- Issue date Mar 7, 2023
- Kabushiki Kaisha Toshiba
- Chen Kong Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with low random telegraph signal noise
- Patent number 11,569,346
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Kuo-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor
- Patent number 11,462,617
- Issue date Oct 4, 2022
- Tso-Tung Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated stacked ESD network in trench for trench DMOS
- Patent number 11,380,675
- Issue date Jul 5, 2022
- Yeuk Yin Mong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with controllable channel length and manufactu...
- Patent number 11,322,492
- Issue date May 3, 2022
- KEY FOUNDRY CO., LTD.
- Hyun Kwang Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide gap semiconductor device
- Patent number 11,309,415
- Issue date Apr 19, 2022
- Shindengen Electric Manufacturing Co., Ltd.
- Shunichi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET device insensitive to noise from drive path
- Patent number 11,282,959
- Issue date Mar 22, 2022
- Monolithic Power Systems, Inc.
- Eric Braun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,158,557
- Issue date Oct 26, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 11,145,733
- Issue date Oct 12, 2021
- United Microelectronics Corp.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,133,300
- Issue date Sep 28, 2021
- Fuji Electric Co., Ltd.
- Yasuyuki Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 11,121,247
- Issue date Sep 14, 2021
- Kabushiki Kaisha Toshiba
- Tomoko Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and manufacturing method thereof
- Patent number 11,107,917
- Issue date Aug 31, 2021
- Realtek Semiconductor Corp.
- I-Jhen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip contact structure, device assembly, and method o...
- Patent number 11,094,614
- Issue date Aug 17, 2021
- Littelfuse, Inc.
- Stefan Steinhoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with low random telegraph signal noise
- Patent number 11,075,267
- Issue date Jul 27, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Kuo-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and power conversion device
- Patent number 11,063,122
- Issue date Jul 13, 2021
- Mitsubishi Electric Corporation
- Yusuke Yamashiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with reliably verifiable p-contact and m...
- Patent number 11,018,051
- Issue date May 25, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Generating milled structural elements with a flat upper surface
- Patent number 10,971,618
- Issue date Apr 6, 2021
- Applied Materials Israel Ltd.
- Ron Davidescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon structure including protective layer
- Patent number 10,957,697
- Issue date Mar 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Shao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device, and power conversion...
- Patent number 10,892,329
- Issue date Jan 12, 2021
- Mitsubishi Electric Corporation
- Shigenori Kido
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Silicon carbide semiconductor device
- Publication number 20240347599
- Publication date Oct 17, 2024
- Fast SiC Semiconductor Incorporated
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDMOS AND FABRICATING METHOD OF THE SAME
- Publication number 20240234572
- Publication date Jul 11, 2024
- UNITED MICROELECTRONICS CORP.
- Liang-An Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
- Publication number 20240234504
- Publication date Jul 11, 2024
- Mitsubishi Electric Corporation
- Seiya SUGIMACHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING T...
- Publication number 20240234566
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- LING MEI LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240213308
- Publication date Jun 27, 2024
- SHINDENGEN ELECTRIC MANUFACTURING CO., LTD
- Azusa SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20240154027
- Publication date May 9, 2024
- UNITED MICROELECTRONICS CORP.
- Hsin-Han Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
- Publication number 20240136399
- Publication date Apr 25, 2024
- Mitsubishi Electric Corporation
- Seiya SUGIMACHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20240105815
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Chin-Yi HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
- Publication number 20240096884
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20230420554
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Yong-Sheng HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONTROLLABLE CHANNEL LENGTH AND MANUFACTU...
- Publication number 20230378172
- Publication date Nov 23, 2023
- KEY FOUNDRY CO., LTD.
- Hyun Kwang SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230307524
- Publication date Sep 28, 2023
- UNITED MICROELECTRONICS CORP.
- Hsin-Han Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR WITH MERGED DRIFT REGION
- Publication number 20230246033
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR
- Publication number 20230013532
- Publication date Jan 19, 2023
- Tso-Tung Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PROTECTION CIRCUIT
- Publication number 20220285933
- Publication date Sep 8, 2022
- Kabushiki Kaisha Toshiba
- Chen Kong Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE & DRAIN DOPANT DIFFUSION BARRIERS FOR N-TYPE GERMANIUM TRANS...
- Publication number 20220199402
- Publication date Jun 23, 2022
- Intel Corporation
- Koustav Ganguly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONTROLLABLE CHANNEL LENGTH AND MANUFACTU...
- Publication number 20220189955
- Publication date Jun 16, 2022
- KEY FOUNDRY CO., LTD.
- Hyun Kwang SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR WITH MERGED DRIFT REGION
- Publication number 20220173101
- Publication date Jun 2, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-POWER FIELD-EFFECT TRANSISTOR (FET)
- Publication number 20220093740
- Publication date Mar 24, 2022
- QUALCOMM Incorporated
- Abhijeet PAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED TRENCH GATES WITH MULTIPLE LAYERS FOR IMPROVED PERFORMANC...
- Publication number 20220045189
- Publication date Feb 10, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Passivation Layer and Method for Produc...
- Publication number 20220005742
- Publication date Jan 6, 2022
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW RANDOM TELEGRAPH SIGNAL NOISE
- Publication number 20210343838
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- KUO-YU CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with p-contact
- Publication number 20210272843
- Publication date Sep 2, 2021
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD FOR DESIGNING SAME
- Publication number 20210273060
- Publication date Sep 2, 2021
- NOVEL CRYSTAL TECHNOLOGY, INC.
- Tadashi KASE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
- Publication number 20210225840
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP CONTACT STRUCTURE, DEVICE ASSEMBLY, AND METHOD O...
- Publication number 20210090972
- Publication date Mar 25, 2021
- LITTELFUSE, INC.
- Stefan Steinhoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210083109
- Publication date Mar 18, 2021
- Realtek Semiconductor Corp.
- I-Jhen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GENERATING MILLED STRUCTURAL ELEMENTS WITH A FLAT UPPER SURFACE
- Publication number 20210036142
- Publication date Feb 4, 2021
- APPLIED MATERIALS ISRAEL LTD.
- Ron Davidescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONTROLLABLE CHANNEL LENGTH AND MANUFACTU...
- Publication number 20210028166
- Publication date Jan 28, 2021
- KEY FOUNDRY CO., LTD.
- Hyun Kwang SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200373292
- Publication date Nov 26, 2020
- Fuji Electric Co., Ltd.
- Yasuyuki HOSHI
- H01 - BASIC ELECTRIC ELEMENTS

DMOS transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power transistor cell and power transistor having field shielding c...

Insulated trench gates with multiple layers for improved performanc...

Semiconductor device with controllable channel length and manufactu...

Power semiconductor device with p-contact and doped insulation bloc...

Field-effect transistor and method for designing same

High voltage semiconductor device and manufacturing method thereof

Polysilicon structure including protective layer

Semiconductor device with a passivation layer and method for produc...

Power semiconductor

Semiconductor device with controllable channel length and manufactu...

Fin field effect transistor with merged drift region

Semiconductor protection circuit

Semiconductor device with low random telegraph signal noise

Power semiconductor

Integrated stacked ESD network in trench for trench DMOS

Semiconductor device with controllable channel length and manufactu...

Wide gap semiconductor device

FET device insensitive to noise from drive path

Semiconductor device with a passivation layer and method for produc...

Method of manufacturing a semiconductor device

Semiconductor device

Semiconductor device and method for manufacturing same

High voltage semiconductor device and manufacturing method thereof

Semiconductor chip contact structure, device assembly, and method o...

Semiconductor device with low random telegraph signal noise

Silicon carbide semiconductor device and power conversion device

Power semiconductor device with reliably verifiable p-contact and m...

Generating milled structural elements with a flat upper surface

Polysilicon structure including protective layer

Method for manufacturing semiconductor device, and power conversion...

Patents Applicationslast 30 patents

Silicon carbide semiconductor device

EDMOS AND FABRICATING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING T...

SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF HIGH VOLTAGE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

SEMICONDUCTOR DEVICE WITH CONTROLLABLE CHANNEL LENGTH AND MANUFACTU...

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FIN FIELD EFFECT TRANSISTOR WITH MERGED DRIFT REGION

POWER SEMICONDUCTOR

SEMICONDUCTOR PROTECTION CIRCUIT

SOURCE & DRAIN DOPANT DIFFUSION BARRIERS FOR N-TYPE GERMANIUM TRANS...

SEMICONDUCTOR DEVICE WITH CONTROLLABLE CHANNEL LENGTH AND MANUFACTU...

FIN FIELD EFFECT TRANSISTOR WITH MERGED DRIFT REGION

HIGH-POWER FIELD-EFFECT TRANSISTOR (FET)

INSULATED TRENCH GATES WITH MULTIPLE LAYERS FOR IMPROVED PERFORMANC...

Semiconductor Device with a Passivation Layer and Method for Produc...

SEMICONDUCTOR DEVICE WITH LOW RANDOM TELEGRAPH SIGNAL NOISE

Power Semiconductor Device with p-contact

FIELD-EFFECT TRANSISTOR AND METHOD FOR DESIGNING SAME

POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER

SEMICONDUCTOR CHIP CONTACT STRUCTURE, DEVICE ASSEMBLY, AND METHOD O...

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

GENERATING MILLED STRUCTURAL ELEMENTS WITH A FLAT UPPER SURFACE

SEMICONDUCTOR DEVICE WITH CONTROLLABLE CHANNEL LENGTH AND MANUFACTU...

SEMICONDUCTOR DEVICE