Doping by irradiation with electromagnetic waves or by particle radiation

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CPC
C30B31/20

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure Apparatus therefor

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C30B31/20Doping by irradiation with electromagnetic waves or by particle radiation

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Patents Grantslast 30 patents

Information Patent Grant
Method for producing wafers with modification lines of defined orie...
- Patent number 12,159,805
- Issue date Dec 3, 2024
- Siltectra GmbH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method of fluorescent nanodiamonds production
- Patent number 12,012,537
- Issue date Jun 18, 2024
- Korea Institute of Science and Technology
- Seung Hee Han
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for reducing the thickness of solid-state layers provided wi...
- Patent number 11,869,810
- Issue date Jan 9, 2024
- Siltectra GmbH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Nitrogen containing single crystal diamond materials optimized for...
- Patent number 11,396,715
- Issue date Jul 26, 2022
- Element Six Technologies Limited
- Wilbur Lew
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for neutron transmutation doping of semiconduc...
- Patent number 11,250,966
- Issue date Feb 15, 2022
- Infineon Technologies AG
- Markus Bina
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for neutron transmutation doping of semiconduc...
- Patent number 10,468,148
- Issue date Nov 5, 2019
- Infineon Technologies AG
- Markus Bina
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
Methods of doping semiconductor materials and metastable doped semi...
- Patent number 10,290,752
- Issue date May 14, 2019
- ST3 LLC
- A. K. Vasudevan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diamond material
- Patent number 9,840,419
- Issue date Dec 12, 2017
- Element Six Technologies Limited
- Daniel James Twitchen
- A44 - HABERDASHERY JEWELLERY
Information Patent Grant
Diamond material
- Patent number 9,255,009
- Issue date Feb 9, 2016
- Element Six Technologies Limited
- Harpreet Kaur Dhillon
- A44 - HABERDASHERY JEWELLERY
Information Patent Grant
Ion implantation at high temperature surface equilibrium conditions
- Patent number 9,218,991
- Issue date Dec 22, 2015
- Infineon Technologies Americas Corp.
- Michael A. Briere
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diamond material
- Patent number 9,068,257
- Issue date Jun 30, 2015
- Element Six Technologies Limited
- Daniel James Twitchen
- A44 - HABERDASHERY JEWELLERY
Information Patent Grant
Diamond material
- Patent number 9,017,632
- Issue date Apr 28, 2015
- Element Six Technologies Limited
- Daniel James Twitchen
- A44 - HABERDASHERY JEWELLERY
Information Patent Grant
Diamond material
- Patent number 8,986,646
- Issue date Mar 24, 2015
- Element Six Technologies Limited
- Daniel James Twitchen
- A44 - HABERDASHERY JEWELLERY
Information Patent Grant
Method for producing piezoelectric composite substrate and method f...
- Patent number 8,572,825
- Issue date Nov 5, 2013
- Murata Manufacturing Co., Ltd.
- Norihiro Hayakawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Silicon wafer and method for producing the same
- Patent number 8,460,463
- Issue date Jun 11, 2013
- Sumco Corporation
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductor substrate and control for electrical propert...
- Patent number 8,178,951
- Issue date May 15, 2012
- Samsung Corning Precision Materials Co., Ltd.
- Young Zo Yoo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal silicon wafer for insulated gate bipolar transistors...
- Patent number 8,105,436
- Issue date Jan 31, 2012
- Sumco Corporation
- Shigeru Umeno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for preparing substrate having monocrystalline film
- Patent number 8,030,176
- Issue date Oct 4, 2011
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro Kubota
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal silicon wafer for insulated gate bipolar transistors
- Patent number 7,629,054
- Issue date Dec 8, 2009
- Sumco Corporation
- Shigeru Umeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming power semiconductor devices using boule-grown si...
- Patent number 6,974,720
- Issue date Dec 13, 2005
- Cree, Inc.
- Joseph John Sumakeris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-insulating silicon carbide produced by Neutron transmutation d...
- Patent number 6,964,917
- Issue date Nov 15, 2005
- Cree, Inc.
- Valeri F. Tsvetkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast neutron irradiation of sapphire
- Patent number 6,222,194
- Issue date Apr 24, 2001
- Aspen Systems, Inc.
- Thomas M Regan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laser irradiation method
- Patent number 6,149,984
- Issue date Nov 21, 2000
- Semiconductor Energy Laboratory, Inc.
- Shunpei Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laser irradiation method
- Patent number 5,925,421
- Issue date Jul 20, 1999
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Neutron transmutation doping of silicon single crystals
- Patent number 5,904,767
- Issue date May 18, 1999
- Industrial Technology Research Institute
- Chungpin Liao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing N-type semiconducting diamond
- Patent number 5,792,256
- Issue date Aug 11, 1998
- Eneco, Inc.
- Yan R. Kucherov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing N-type semiconducting diamond
- Patent number 5,653,800
- Issue date Aug 5, 1997
- Eneco, Inc.
- Yan R. Kucherov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Surface processing apparatus
- Patent number 5,332,442
- Issue date Jul 26, 1994
- Tokyo Electron Kabushiki Kaisha
- Masao Kubodera
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transport system, in particular for transporting silicon monocrysta...
- Patent number 5,324,331
- Issue date Jun 28, 1994
- Florian Fischer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transparent semiconductor crystals
- Patent number 5,259,917
- Issue date Nov 9, 1993
- The United States of America as represented by the Secretary of the Air Force
- Melvin C. Ohmer
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
VOID DEFECT FORMING METHOD, DEVICE, AND DIAMOND MANUFACTURING METHOD
- Publication number 20240410083
- Publication date Dec 12, 2024
- KYOTO UNIVERSITY
- Norikazu MIZUOCHI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
THERMAL PROCESSING TECHNIQUES FOR METALLIC MATERIALS
- Publication number 20200029396
- Publication date Jan 23, 2020
- Carnegie Mellon University
- Michael E. McHenry
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUC...
- Publication number 20200005957
- Publication date Jan 2, 2020
- INFINEON TECHNOLOGIES AG
- Markus BINA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR ATOM INCORPORATION INTO MATERIALS USING A PLASMA AFTERGLOW
- Publication number 20170183795
- Publication date Jun 29, 2017
- Valorisation-Recherche, Limited Partnership
- Luc STAFFORD
- C30 - CRYSTAL GROWTH
Information Patent Application
Ion Implantation at High Temperature Surface Equilibrium Conditions
- Publication number 20140147998
- Publication date May 29, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING PIEZOELECTRIC COMPOSITE SUBSTRATE AND METHOD F...
- Publication number 20110220275
- Publication date Sep 15, 2011
- Murata Manufacturing Co., Ltd.
- Norihiro HAYAKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND MATERIAL
- Publication number 20100326135
- Publication date Dec 30, 2010
- Daniel James Twitchen
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND MATERIAL
- Publication number 20100329962
- Publication date Dec 30, 2010
- Daniel James Twitchen
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND MATERIAL
- Publication number 20100329961
- Publication date Dec 30, 2010
- Harpreet Kaur Dhillon
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND MATERIAL
- Publication number 20100329965
- Publication date Dec 30, 2010
- Daniel James Twitchen
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING THE SAME
- Publication number 20100052103
- Publication date Mar 4, 2010
- SUMCO CORPORATION
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING THE SAME
- Publication number 20100051945
- Publication date Mar 4, 2010
- SUMCO CORPORATION
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
P-TYPE ZINC OXIDE THIN FILM AND METHOD FOR FORMING THE SAME
- Publication number 20090302314
- Publication date Dec 10, 2009
- National Institute of Adv. Industrial Sci. & Tech.
- Takeshi Kusumori
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOUND SEMICONDUCTOR SUBSTRATE AND CONTROL FOR ELECTRICAL PROPERT...
- Publication number 20090230513
- Publication date Sep 17, 2009
- Samsung Corning Precision Glass Co., Ltd.
- Young Zo Yoo
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for preparing substrate having monocrystalline film
- Publication number 20090221131
- Publication date Sep 3, 2009
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro Kubota
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL SILICON WAFER FOR INSULATED GATE BIPOLAR TRANSISTORS...
- Publication number 20090081856
- Publication date Mar 26, 2009
- SUMCO CORPORATION
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
Single crystal silicon wafer for insulated gate bipolar transistors...
- Publication number 20070186845
- Publication date Aug 16, 2007
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods of forming power semiconductor devices using boule-grown si...
- Publication number 20050082542
- Publication date Apr 21, 2005
- Joseph John Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Semi-Insulating Silicon Carbide Produced by Neutron Transmutation D...
- Publication number 20040201024
- Publication date Oct 14, 2004
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH

Doping by irradiation with electromagnetic waves or by particle radiation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for producing wafers with modification lines of defined orie...

Method of fluorescent nanodiamonds production

Method for reducing the thickness of solid-state layers provided wi...

Nitrogen containing single crystal diamond materials optimized for...

Apparatus and method for neutron transmutation doping of semiconduc...

Apparatus and method for neutron transmutation doping of semiconduc...

Methods of doping semiconductor materials and metastable doped semi...

Diamond material

Diamond material

Ion implantation at high temperature surface equilibrium conditions

Diamond material

Diamond material

Diamond material

Method for producing piezoelectric composite substrate and method f...

Silicon wafer and method for producing the same

Compound semiconductor substrate and control for electrical propert...

Single crystal silicon wafer for insulated gate bipolar transistors...

Method for preparing substrate having monocrystalline film

Single crystal silicon wafer for insulated gate bipolar transistors

Methods of forming power semiconductor devices using boule-grown si...

Semi-insulating silicon carbide produced by Neutron transmutation d...

Fast neutron irradiation of sapphire

Laser irradiation method

Laser irradiation method

Neutron transmutation doping of silicon single crystals

Method for producing N-type semiconducting diamond

Method for producing N-type semiconducting diamond

Surface processing apparatus

Transport system, in particular for transporting silicon monocrysta...

Transparent semiconductor crystals

Patents Applicationslast 30 patents

VOID DEFECT FORMING METHOD, DEVICE, AND DIAMOND MANUFACTURING METHOD

THERMAL PROCESSING TECHNIQUES FOR METALLIC MATERIALS

APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUC...

METHODS FOR ATOM INCORPORATION INTO MATERIALS USING A PLASMA AFTERGLOW

Ion Implantation at High Temperature Surface Equilibrium Conditions

METHOD FOR PRODUCING PIEZOELECTRIC COMPOSITE SUBSTRATE AND METHOD F...

DIAMOND MATERIAL

DIAMOND MATERIAL

DIAMOND MATERIAL

DIAMOND MATERIAL

SILICON WAFER AND METHOD FOR PRODUCING THE SAME

SILICON WAFER AND METHOD FOR PRODUCING THE SAME

P-TYPE ZINC OXIDE THIN FILM AND METHOD FOR FORMING THE SAME

COMPOUND SEMICONDUCTOR SUBSTRATE AND CONTROL FOR ELECTRICAL PROPERT...

Method for preparing substrate having monocrystalline film

SINGLE CRYSTAL SILICON WAFER FOR INSULATED GATE BIPOLAR TRANSISTORS...

Single crystal silicon wafer for insulated gate bipolar transistors...

Methods of forming power semiconductor devices using boule-grown si...

Semi-Insulating Silicon Carbide Produced by Neutron Transmutation D...