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Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure Apparatus therefor
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CPC
C30B31/00
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Parent Industries
C
CHEMISTRY METALLURGY
C30
Crystal growth
C30B
SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D...
Current Industry
C30B31/00
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure Apparatus therefor
Sub Industries
C30B31/02
by contacting with diffusion material in the solid state
C30B31/04
by contacting with diffusion material in the liquid state
C30B31/045
by electrolysis
C30B31/06
by contacting with diffusion material in the gaseous state
C30B31/08
the diffusion material being a compound of the elements to be diffused
C30B31/10
Reaction chambers Selection of material therefor
C30B31/103
Mechanisms for moving either the charge or heater
C30B31/106
Continuous processes
C30B31/12
Heating of the reaction chamber
C30B31/14
Substrate holders or susceptors
C30B31/16
Feed and outlet means for the gases Modifying the flow of the gases
C30B31/165
Diffusion sources
C30B31/18
Controlling or regulating
C30B31/185
Pattern diffusion
C30B31/20
Doping by irradiation with electromagnetic waves or by particle radiation
C30B31/22
by ion-implantation
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last 30 patents
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Patent number
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Issue date
Dec 3, 2024
Soitec
Hugo Biard
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Patent Grant
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Patent number
12,159,805
Issue date
Dec 3, 2024
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B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
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Large diameter silicon carbide wafers
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12,054,850
Issue date
Aug 6, 2024
Wolfspeed, Inc.
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C30 - CRYSTAL GROWTH
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Method of fluorescent nanodiamonds production
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12,012,537
Issue date
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Korea Institute of Science and Technology
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B82 - NANO-TECHNOLOGY
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Wavelength conversion element and method for producing same
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Issue date
Jun 11, 2024
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C30 - CRYSTAL GROWTH
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Patent number
11,967,530
Issue date
Apr 23, 2024
Shin-Etsu Chemical Co., Ltd.
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B32 - LAYERED PRODUCTS
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Patent number
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Issue date
Feb 13, 2024
Shin-Etsu Chemical Co., Ltd.
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C30 - CRYSTAL GROWTH
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Patent Grant
Method for reducing the thickness of solid-state layers provided wi...
Patent number
11,869,810
Issue date
Jan 9, 2024
Siltectra GmbH
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B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
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Patent Grant
Method for depositing low temperature phosphorous-doped silicon
Patent number
11,781,243
Issue date
Oct 10, 2023
ASM IP Holding B.V.
Rami Khazaka
C30 - CRYSTAL GROWTH
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Patent Grant
Carbon-doped silicon single crystal wafer and method for manufactur...
Patent number
11,761,118
Issue date
Sep 19, 2023
Shin-Etsu Handotai Co., Ltd.
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C30 - CRYSTAL GROWTH
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Patent Grant
Crystal laminate, semiconductor device and method for manufacturing...
Patent number
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Issue date
May 2, 2023
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C30 - CRYSTAL GROWTH
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Apparatus for the manufacture of synthetic diamonds using different...
Patent number
11,623,194
Issue date
Apr 11, 2023
Gull Corporation Ltd
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C01 - INORGANIC CHEMISTRY
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Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28<...
Patent number
11,624,126
Issue date
Apr 11, 2023
OHIO STATE INNOVATION FOUNDATION
Hongping Zhao
C30 - CRYSTAL GROWTH
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Nitride semiconductor laminate, semiconductor device, method of man...
Patent number
11,600,704
Issue date
Mar 7, 2023
Sumitomo Chemical Company, Limited
Hajime Fujikura
C30 - CRYSTAL GROWTH
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Method and structure of single crystal electronic devices with enha...
Patent number
11,557,716
Issue date
Jan 17, 2023
AKOUSTIS, INC.
Shawn R. Gibb
H01 - BASIC ELECTRIC ELEMENTS
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Method for producing GaN laminate substrate having front surface wh...
Patent number
11,479,876
Issue date
Oct 25, 2022
Shin-Etsu Chemical Co., Ltd.
Yoshihiro Kubota
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Epitaxial structure of N-face group III nitride, active device, and...
Patent number
11,469,308
Issue date
Oct 11, 2022
Chih-Shu Huang
C30 - CRYSTAL GROWTH
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Method of decomposing quartz sample, method of analyzing metal cont...
Patent number
11,421,342
Issue date
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Sumco Corporation
Hirokazu Kato
C30 - CRYSTAL GROWTH
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Method of separating a film from a main body of a crystalline object
Patent number
11,414,782
Issue date
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Bing Hu
C30 - CRYSTAL GROWTH
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Nitrogen containing single crystal diamond materials optimized for...
Patent number
11,396,715
Issue date
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Element Six Technologies Limited
Wilbur Lew
C30 - CRYSTAL GROWTH
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Boron-doped copper catalysts for efficient conversion of CO2 to mul...
Patent number
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Issue date
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TOTAL SE
Edward Sargent
C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
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Patent Grant
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Patent number
11,371,139
Issue date
Jun 28, 2022
Sumitomo Electric Industries, Ltd.
Yoshiki Nishibayashi
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
System and method for increasing group III-nitride semiconductor gr...
Patent number
11,319,644
Issue date
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Georgia Tech Research Corporation
William Alan Doolittle
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Patent Grant
Method for manufacturing transition metal chalcogenide and transiti...
Patent number
11,268,210
Issue date
Mar 8, 2022
Korea Advanced Institute of Science and Technology
Sung-Yool Choi
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Apparatus and method for neutron transmutation doping of semiconduc...
Patent number
11,250,966
Issue date
Feb 15, 2022
Infineon Technologies AG
Markus Bina
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing composite wafer having oxide single-crystal film
Patent number
11,195,987
Issue date
Dec 7, 2021
Shin-Etsu Chemical Co., Ltd.
Shoji Akiyama
C30 - CRYSTAL GROWTH
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Patent Grant
Production of rounded salt particles
Patent number
11,078,085
Issue date
Aug 3, 2021
Allergan, Inc.
David J. Schuessler
C01 - INORGANIC CHEMISTRY
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Method for manufacturing silicon-carbide semiconductor element
Patent number
11,081,347
Issue date
Aug 3, 2021
KWANSEI GAKUIN EDUCATIONAL FOUNDATION
Tadaaki Kaneko
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Lithium tantalate single crystal substrate, bonded substrate, manuf...
Patent number
11,021,810
Issue date
Jun 1, 2021
Shin-Etsu Chemical Co., Ltd.
Masayuki Tanno
C01 - INORGANIC CHEMISTRY
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Patent Grant
Diamond composite body, substrate, diamond, tool including diamond,...
Patent number
11,001,938
Issue date
May 11, 2021
Sumitomo Electric Industries, Ltd.
Yoshiki Nishibayashi
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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last 30 patents
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SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
Publication number
20240417882
Publication date
Dec 19, 2024
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H01 - BASIC ELECTRIC ELEMENTS
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VOID DEFECT FORMING METHOD, DEVICE, AND DIAMOND MANUFACTURING METHOD
Publication number
20240410083
Publication date
Dec 12, 2024
KYOTO UNIVERSITY
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C01 - INORGANIC CHEMISTRY
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Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
Publication number
20240352622
Publication date
Oct 24, 2024
Wolfspeed, Inc.
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C30 - CRYSTAL GROWTH
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Publication number
20240328032
Publication date
Oct 3, 2024
ROHM CO., LTD.
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C30 - CRYSTAL GROWTH
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SINGLE CRYSTAL DIAMOND COMPONENT AND METHOD FOR PRODUCING
Publication number
20240309554
Publication date
Sep 19, 2024
Element Six Technologies Limited
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C30 - CRYSTAL GROWTH
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PROCESS FOR PRODUCING ROLLS AND MEMBRANES OF SUBMICROMETRIC THICKNE...
Publication number
20240304460
Publication date
Sep 12, 2024
INSTITUTO SUPERIOR TECNICO
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C30 - CRYSTAL GROWTH
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COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCT...
Publication number
20240297069
Publication date
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ENKRIS SEMICONDUCTOR, INC.
Kai CHENG
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Publication number
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Publication date
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C30 - CRYSTAL GROWTH
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SOLID STATE ELECTRIC FIELD SENSOR
Publication number
20240241166
Publication date
Jul 18, 2024
The University of Melbourne
David Allan Simpson
C30 - CRYSTAL GROWTH
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Patent Application
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Publication number
20240203730
Publication date
Jun 20, 2024
ASM IP HOLDING B.V.
Rami Khazaka
C30 - CRYSTAL GROWTH
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Publication number
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Publication date
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BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
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C30 - CRYSTAL GROWTH
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METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS
Publication number
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BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
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C30 - CRYSTAL GROWTH
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Apr 25, 2024
Shin-Etsu Chemical Co., Ltd.
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Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
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SUBSTRATES FOR OPTOELECTRONIC DEVICES AND METHODS OF MANUFACTURING...
Publication number
20240011193
Publication date
Jan 11, 2024
Socpra Sciences et Genie s.e.c.
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C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
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H01 - BASIC ELECTRIC ELEMENTS
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H01 - BASIC ELECTRIC ELEMENTS
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C30 - CRYSTAL GROWTH
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C30 - CRYSTAL GROWTH
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B82 - NANO-TECHNOLOGY
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