Doping control in crystal growth

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CPC
Y10S148/041

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/041Doping control in crystal growth

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Patents Grantslast 30 patents

Information Patent Grant
Silicon wafers for CMOS and other integrated circuits
- Patent number 6,667,522
- Issue date Dec 23, 2003
- Intel Corporation
- Kramadhati V. Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafers for CMOS and other integrated circuits
- Patent number 6,423,615
- Issue date Jul 23, 2002
- Intel Corporation
- Kramadhati V. Ravi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor integrated circuit using monolayer epitaxial growth
- Patent number 5,905,297
- Issue date May 18, 1999
- Fujitsu Limited
- Toshihiko Mori
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for fabricating compound semiconductor laser
- Patent number 5,789,273
- Issue date Aug 4, 1998
- Sony Corporation
- Tadashi Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor integrated circuit using monolayer...
- Patent number 5,705,408
- Issue date Jan 6, 1998
- Fujitsu Limited
- Toshihiko Mori
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for fabricating a multilayer epitaxial structure
- Patent number 5,432,121
- Issue date Jul 11, 1995
- G. I. Corporation
- Joseph Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of nitrogen doping of II-VI semiconductor compounds during e...
- Patent number 5,354,708
- Issue date Oct 11, 1994
- Nikhil R. Taskar
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the directed modulation of the composition or doping of...
- Patent number 5,294,564
- Issue date Mar 15, 1994
- Thomson-CSF
- Leonidas Karapiperis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing epitaxial layers of N-doped II-VI semiconductor c...
- Patent number 5,273,931
- Issue date Dec 28, 1993
- North American Philips Corporation
- Nikhil Taskar
- C30 - CRYSTAL GROWTH
Information Patent Grant
TEOV doping of gallium arsenide
- Patent number 5,252,512
- Issue date Oct 12, 1993
- United Technologies Corporation
- Alexander J. Shuskus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an ultra-thin active region for high speed se...
- Patent number 5,177,025
- Issue date Jan 5, 1993
- Hewlett-Packard Company
- John E. Turner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-high-speed photoconductive devices using semi-insulating layers
- Patent number 5,168,069
- Issue date Dec 1, 1992
- Massachusetts Institute of Technology
- Frank W. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Giant grains or single crystals of chromium and process for produci...
- Patent number 5,154,796
- Issue date Oct 13, 1992
- Tosoh Corporation
- Tsutomu Kuniya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating a semiconductor device including a semi-insu...
- Patent number 5,128,275
- Issue date Jul 7, 1992
- Fujitsu Limited
- Masahiko Takikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amino replacements for arsine, antimony and phosphine
- Patent number 5,124,278
- Issue date Jun 23, 1992
- Air Products and Chemicals, Inc.
- David A. Bohling
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating solar cells
- Patent number 5,106,763
- Issue date Apr 21, 1992
- Mobil Solar Energy Corporation
- Balakrishnan R. Bathey
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a light emitting element
- Patent number 5,068,204
- Issue date Nov 26, 1991
- Misawa Co. Ltd.
- Hiroshi Kukimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a heterostructure transistor having a germ...
- Patent number 5,047,365
- Issue date Sep 10, 1991
- NEC Corporation
- Masafumi Kawanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing p-type group II-VI material
- Patent number 5,028,561
- Issue date Jul 2, 1991
- Hughes Aircraft Company
- G. Sanjiv Kamath
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing zinc chalcogenide semiconductor devices usi...
- Patent number 5,026,661
- Issue date Jun 25, 1991
- Hitachi, Ltd.
- Masahito Migita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Doping procedures for semiconductor devices
- Patent number 5,024,967
- Issue date Jun 18, 1991
- AT&T Bell Laboratories
- Rose F. Kopf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
A stripe-shaped heterojunction laser with unique current confinement
- Patent number 5,010,556
- Issue date Apr 23, 1991
- Omron Tateisi Electronics Co.
- Koichi Imanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling dopant incorporation in high resistivity In-b...
- Patent number 4,999,315
- Issue date Mar 12, 1991
- AT&T Bell Laboratories
- Wilbur D. Johnston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of doping and implanting using arsine, antimony, and phosphi...
- Patent number 4,988,640
- Issue date Jan 29, 1991
- Air Products and Chemicals, Inc.
- David A. Bohling
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of making a gallium arsenide phosphide-, mixed crystal-epita...
- Patent number 4,968,642
- Issue date Nov 6, 1990
- Mitsubishi Chemical Industries, Ltd.
- Hisanori Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making buffer layers for III-V devices using solid phase...
- Patent number 4,952,527
- Issue date Aug 28, 1990
- Massachusetts Institute of Technology
- Arthur R. Calawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing III-V semiconductor layers with high effective ho...
- Patent number 4,939,102
- Issue date Jul 3, 1990
- American Telephone and Telegraph Company
- Robert A. Hamm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for growing GaAs epitaxial layers
- Patent number 4,935,381
- Issue date Jun 19, 1990
- The Aerospace Corporation
- Donna M. Speckman
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for doping crystals of wide band gap semiconductors
- Patent number 4,904,618
- Issue date Feb 27, 1990
- Gertrude F. Neumark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective NIPI doping super lattice contacts and other semiconducto...
- Patent number 4,883,770
- Issue date Nov 28, 1989
- Hewlett-Packard Company
- Gottfried H. Dohler
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Silicon wafers for CMOS and other integrated circuits
- Publication number 20020142566
- Publication date Oct 3, 2002
- Intel Corporation
- Kramadhati V. Ravi
- C30 - CRYSTAL GROWTH

Doping control in crystal growth

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon wafers for CMOS and other integrated circuits

Silicon wafers for CMOS and other integrated circuits

Semiconductor integrated circuit using monolayer epitaxial growth

Method for fabricating compound semiconductor laser

Method for forming semiconductor integrated circuit using monolayer...

Method for fabricating a multilayer epitaxial structure

Method of nitrogen doping of II-VI semiconductor compounds during e...

Method for the directed modulation of the composition or doping of...

Method of growing epitaxial layers of N-doped II-VI semiconductor c...

TEOV doping of gallium arsenide

Method of fabricating an ultra-thin active region for high speed se...

Ultra-high-speed photoconductive devices using semi-insulating layers

Giant grains or single crystals of chromium and process for produci...

Method for fabricating a semiconductor device including a semi-insu...

Amino replacements for arsine, antimony and phosphine

Method of fabricating solar cells

Method of manufacturing a light emitting element

Method for manufacturing a heterostructure transistor having a germ...

Method of growing p-type group II-VI material

Method of manufacturing zinc chalcogenide semiconductor devices usi...

Doping procedures for semiconductor devices

A stripe-shaped heterojunction laser with unique current confinement

Method of controlling dopant incorporation in high resistivity In-b...

Method of doping and implanting using arsine, antimony, and phosphi...

Method of making a gallium arsenide phosphide-, mixed crystal-epita...

Method of making buffer layers for III-V devices using solid phase...

Method of growing III-V semiconductor layers with high effective ho...

Process for growing GaAs epitaxial layers

Process for doping crystals of wide band gap semiconductors

Selective NIPI doping super lattice contacts and other semiconducto...

Patents Applicationslast 30 patents

Silicon wafers for CMOS and other integrated circuits