Method of making buffer layers for III-V devices using solid phase epitaxy

Abstract

A new III-IV buffer material is described which is produced by low temperature growth of III-V compounds by MBE that has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices, such as HEMT's, MESFET's and MISFET's. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300.degree. C. The new material is crystalline, highly resistive, optically inactive, and can be overgrown with high quality III-V active layers.

Description

Claims

1. A method of making an intermediate optically inert, electrically insulating crystalline layer of GaAs material on a substrate for growth thereon of high quality crystalline films comprising the steps of:

(a) forming in a chamber said crystalline layer of GaAs material by low temperature molecular beam deposition at less than 300.degree. C. of a flux of Ga and As molecular beam specie on a surface of a substrate formed of III-V materials;

(b) subjecting said layer to a heat treatment in an ambient containing arsenic;

(c) forming a thin stabilizing layer over said heat treated layer to minimize out diffusion of the arsenic.

2. The method of claim 1 wherein the low temperature is in the range of 150-300.degree. C.

3. A method of making GaAs device on a structure comprising the steps of:

(a) forming in a chamber, a crystalline buffer layer of GaAs material by low temperature molecular beam deposition at below 300.degree. C. of a flux of Ga and As materials on a surface of a substrate formed from the group comprising III-V materials;

(b) subjecting said layer to a heat treatment in an ambient containing arsenic;

(c) forming a thin stabilizing layer of GaAs material over said heat treated layer to minimize out diffusion of the arsenic;

(d) forming said GaAs device on said stabilizing layer.

4. The method of claim 3 wherein the active device is a MESFET.

5. The method of claim 3 wherein the GaAs device is formed in a crystalline active layer grown on said stabilizing layer.

6. The method of claim 5 wherein the buffer layer has a resistivity of greater than 10.sup.7 ohm-cm.

7. A method of making an intermediate buffer structure for growth thereon of high quality crystalline electro-optical films comprising the steps of:

(a) in a chamber, forming a crystalline buffer layer of thickness greater than 300.degree. .ANG. of material by low temperature molecular beam deposition at less than 300.degree. C. of a flux of Ga and As molecular beam specie on a surface of a substrate, which surface is comprised of materials from the same III-V group of materials as in the buffer layer;

(b) subjecting said buffer layer to a heat treatment at less than 900.degree. C. in an ambient containing arsenic;

(c) forming a thin stabilizing layer over said heat treated layer to minimize out diffusion of the arsenic; thereby to produce a stable buffer layer which is optically inert and electrically insulating.

8. The method of claim 1 wherein the low temperature in step (a) is in the range of 150-300.degree. C. and the inert treatment in step (b) occurs at a temperature less than 900.degree. C.

9. The method of claim 7 wherein the substrate is formed of semi-insulating GaAs.

10. A method of making a III-V device on a substrate comprising the steps of:

(a) forming a buffer layer of III-V material by low temperature molecular beam deposition at less than 300.degree. C. of a flux of III-V molecules on said GaAs substrate in a chamber;

(b) subjecting said layer to a heat treatment in an ambient containing As;

(c) forming a thin stabilizing layer of III-V material over said heat treated layer to minimize out diffusion of the As;

(d) forming said III-V device on said stabilizing layer.