Doping during depositing

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H01L21/0257

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/0257Doping during depositing

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Remote capacitively coupled plasma deposition of amorphous silicon
- Patent number 12,365,986
- Issue date Jul 22, 2025
- Applied Materials, Inc.
- Zubin Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial growth methods and structures thereof
- Patent number 12,369,374
- Issue date Jul 22, 2025
- Taiwan Semicoductor Manufacturing Co., Ltd.
- Tetsuji Ueno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Increasing source/drain dopant concentration to reduced resistance
- Patent number 12,369,342
- Issue date Jul 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing a Group IV semiconductor and related semicond...
- Patent number 12,363,960
- Issue date Jul 15, 2025
- ASM IP Holding B.V.
- Joe Margetis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and wafer processing furnace for forming an epitaxial stack...
- Patent number 12,362,174
- Issue date Jul 15, 2025
- ASM IP Holding B.V.
- Steven Van Aerde
- C30 - CRYSTAL GROWTH
Information Patent Grant
Near-infrared light emitting semiconductor element and method for m...
- Patent number 12,364,058
- Issue date Jul 15, 2025
- The Ritsumeikan Trust
- Shuhei Ichikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming doped metal oxide films on a substrate by cyclic...
- Patent number 12,354,872
- Issue date Jul 8, 2025
- ASM IP Holding B.V.
- Tom Blomberg
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 12,351,943
- Issue date Jul 8, 2025
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor devices and methods of manufacturing the same
- Patent number 12,354,899
- Issue date Jul 8, 2025
- Samsung Electronics Co., Ltd.
- Taeyong Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-type SNS thin film, photoelectric conversion element, solar cell,...
- Patent number 12,342,655
- Issue date Jun 24, 2025
- Tohoku University
- Issei Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer, semiconductor device, and method for manufacturing...
- Patent number 12,334,340
- Issue date Jun 17, 2025
- Mitsubishi Electric Corporation
- Atsushi Era
- C30 - CRYSTAL GROWTH
Information Patent Grant
Source/drain structure for semiconductor device
- Patent number 12,336,210
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor deposition device and method of producing epitaxial wafer
- Patent number 12,327,724
- Issue date Jun 10, 2025
- Epicrew Corporation
- Akira Okabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for CVD deposition of n-type doped silicon carbide and epita...
- Patent number 12,325,932
- Issue date Jun 10, 2025
- LPE S.P.A.
- Silvio Preti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth structure for a radiation-emitting semiconductor component,...
- Patent number 12,324,275
- Issue date Jun 3, 2025
- Osram Opto Semiconductors GmbH
- Andreas Koller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating Fin-type field-effect transistor device havin...
- Patent number 12,324,224
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,308,371
- Issue date May 20, 2025
- NATIONAL TAIWAN UNIVERSITY
- Fang-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,308,228
- Issue date May 20, 2025
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for low temperature selective epitaxy in a dee...
- Patent number 12,297,559
- Issue date May 13, 2025
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity silicon-on-insulator substrate comprising an isola...
- Patent number 12,300,535
- Issue date May 13, 2025
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 12,294,027
- Issue date May 6, 2025
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for film formation
- Patent number 12,293,900
- Issue date May 6, 2025
- Gallium Enterprises Pty Ltd.
- Satyanarayan Barik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond semiconductor system and method
- Patent number 12,288,690
- Issue date Apr 29, 2025
- AKHAN SEMICONDUCTOR, INC.
- Adam Khan
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method of fabricating thin, crystalline silicon film and thin film...
- Patent number 12,272,550
- Issue date Apr 8, 2025
- Ramesh Kumar Harjivan Kakkad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures with doped semiconductor layers and methods and systems...
- Patent number 12,266,695
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
- Patent number 12,266,697
- Issue date Apr 1, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing boron containing silicon germanium layers
- Patent number 12,266,524
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field stop IGBT with grown injection region
- Patent number 12,262,553
- Issue date Mar 25, 2025
- iPower Semiconductor
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic complementary field-effect transistors having carbon-dop...
- Patent number 12,262,559
- Issue date Mar 25, 2025
- Applied Materials, Inc.
- Andrew Anthony Cockburn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-die formation of single-crystal semiconductor structures
- Patent number 12,256,553
- Issue date Mar 18, 2025
- Micron Technology, Inc.
- Jeffery Brandt Hull
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW-RESISTANCE SOURCE/DRAIN FEATURES
- Publication number 20250234610
- Publication date Jul 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR FILM FORMATION
- Publication number 20250232958
- Publication date Jul 17, 2025
- Gallium Enterprises Pty Ltd
- Satyanarayan Barik
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SUPPRESSION OF DOPANT HYDRIDE EVOLUTION FROM EPITAXIAL FILMS IN INT...
- Publication number 20250218777
- Publication date Jul 3, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Michael Todd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPRESSION OF AUTO-DOPING DURING EPITAXIAL GROWTH OF EPITAXY LAYER...
- Publication number 20250212475
- Publication date Jun 26, 2025
- NEXPERIA B.V.
- Tim Böttcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnesium Group IV Oxides
- Publication number 20250212474
- Publication date Jun 26, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND CHEMICAL VAPOR DEPOSITION APPARATUS FOR MANUFACTURING SE...
- Publication number 20250201568
- Publication date Jun 19, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsz-Mei KWOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC COMPLEMENTARY FIELD-EFFECT TRANSISTORS HAVING CARBON-DOP...
- Publication number 20250194243
- Publication date Jun 12, 2025
- Applied Materials, Inc.
- Andrew Anthony Cockburn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20250194188
- Publication date Jun 12, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DEPOSITING A BORON DOPED SILICON GERMANIUM LAYER AND AS...
- Publication number 20250174457
- Publication date May 29, 2025
- ASM IP HOLDING B.V.
- Lutz Muehlenbein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES WITH DOPED SEMICONDUCTOR LAYERS AND METHODS AND SYSTEMS...
- Publication number 20250176236
- Publication date May 29, 2025
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250169132
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION...
- Publication number 20250163606
- Publication date May 22, 2025
- Mach Corporation Co., Ltd.
- Goubun AKATSUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS
- Publication number 20250157814
- Publication date May 15, 2025
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS
- Publication number 20250151318
- Publication date May 8, 2025
- Intel Corporation
- Ritesh K. DAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ARCHITECTURE FOR CAPACITANCE REDUCTION AND SATISFACTORY CON...
- Publication number 20250151363
- Publication date May 8, 2025
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of Stacked Lateral Semiconductor Devices and the Resultin...
- Publication number 20250125146
- Publication date Apr 17, 2025
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CHIP MANUFACTURING METHOD
- Publication number 20250126877
- Publication date Apr 17, 2025
- STMicroelectronics S.r.l
- Pierpaolo MONGE ROFFARELLO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
- Publication number 20250109526
- Publication date Apr 3, 2025
- Resonac Corporation
- Kensho TANAKA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER
- Publication number 20250112042
- Publication date Apr 3, 2025
- ASM IP HOLDING B.V.
- Gregory Deye
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20250105007
- Publication date Mar 27, 2025
- Kokusai Electric Corporation
- Yugo ORIHASHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250098234
- Publication date Mar 20, 2025
- Kabushiki Kaisha Toshiba
- Shunsuke KAMIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURI...
- Publication number 20250079170
- Publication date Mar 6, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR PROCESSI...
- Publication number 20250079167
- Publication date Mar 6, 2025
- ASM IP HOLDING B.V.
- Ernesto Suarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING DEVICE
- Publication number 20250079171
- Publication date Mar 6, 2025
- TOKYO ELECTRON LIMITED
- Tatsuya MIYAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM OXIDE SEMICONDUCTOR DEVICE WITH ENHANCED OHMIC CONTACT PROP...
- Publication number 20250081567
- Publication date Mar 6, 2025
- POWER CUBESEMI INC.
- Tai Young KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...
- Publication number 20250063784
- Publication date Feb 20, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EUV DOSE REDUCING LAYERS, RELATED STRUCTURES, AND METHODS AND SYSTE...
- Publication number 20250046609
- Publication date Feb 6, 2025
- ASM IP HOLDING B.V.
- Fatemeh Davodi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD...
- Publication number 20250006512
- Publication date Jan 2, 2025
- Kokusai Electric Corporation
- Kazuya NABETA
- H01 - BASIC ELECTRIC ELEMENTS

Doping during depositing

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Remote capacitively coupled plasma deposition of amorphous silicon

Epitaxial growth methods and structures thereof

Increasing source/drain dopant concentration to reduced resistance

Method for depositing a Group IV semiconductor and related semicond...

Method and wafer processing furnace for forming an epitaxial stack...

Near-infrared light emitting semiconductor element and method for m...

Method for forming doped metal oxide films on a substrate by cyclic...

n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

Semiconductor devices and methods of manufacturing the same

N-type SNS thin film, photoelectric conversion element, solar cell,...

Epitaxial wafer, semiconductor device, and method for manufacturing...

Source/drain structure for semiconductor device

Vapor deposition device and method of producing epitaxial wafer

Method for CVD deposition of n-type doped silicon carbide and epita...

Growth structure for a radiation-emitting semiconductor component,...

Method of fabricating Fin-type field-effect transistor device havin...

Semiconductor device and manufacturing method thereof

Manufacturing method for semiconductor silicon wafer

Method and apparatus for low temperature selective epitaxy in a dee...

High resistivity silicon-on-insulator substrate comprising an isola...

Semiconductor device having doped epitaxial region and its methods...

Apparatus and method for film formation

Diamond semiconductor system and method

Method of fabricating thin, crystalline silicon film and thin film...

Structures with doped semiconductor layers and methods and systems...

Ultrawide bandgap semiconductor devices including magnesium germani...

Method for depositing boron containing silicon germanium layers

Field stop IGBT with grown injection region

Monolithic complementary field-effect transistors having carbon-dop...

On-die formation of single-crystal semiconductor structures

Patents Applicationslast 30 patents

LOW-RESISTANCE SOURCE/DRAIN FEATURES

APPARATUS AND METHOD FOR FILM FORMATION

SUPPRESSION OF DOPANT HYDRIDE EVOLUTION FROM EPITAXIAL FILMS IN INT...

SUPPRESSION OF AUTO-DOPING DURING EPITAXIAL GROWTH OF EPITAXY LAYER...

Magnesium Group IV Oxides

METHOD AND CHEMICAL VAPOR DEPOSITION APPARATUS FOR MANUFACTURING SE...

MONOLITHIC COMPLEMENTARY FIELD-EFFECT TRANSISTORS HAVING CARBON-DOP...

GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME

METHODS FOR DEPOSITING A BORON DOPED SILICON GERMANIUM LAYER AND AS...

STRUCTURES WITH DOPED SEMICONDUCTOR LAYERS AND METHODS AND SYSTEMS...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION...

METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS

CONTACT ARCHITECTURE FOR CAPACITANCE REDUCTION AND SATISFACTORY CON...

Formation of Stacked Lateral Semiconductor Devices and the Resultin...

SEMICONDUCTOR CHIP MANUFACTURING METHOD

SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER

SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...

SEMICONDUCTOR DEVICE

ENHANCEMENT-MODE SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURI...

METHODS OF FORMING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR PROCESSI...

SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING DEVICE

GALLIUM OXIDE SEMICONDUCTOR DEVICE WITH ENHANCED OHMIC CONTACT PROP...

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...

EUV DOSE REDUCING LAYERS, RELATED STRUCTURES, AND METHODS AND SYSTE...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD...