Doping during depositing

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H01L21/0257

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/0257Doping during depositing

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating thin, crystalline silicon film and thin film...
- Patent number 12,272,550
- Issue date Apr 8, 2025
- Ramesh Kumar Harjivan Kakkad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures with doped semiconductor layers and methods and systems...
- Patent number 12,266,695
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
- Patent number 12,266,697
- Issue date Apr 1, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing boron containing silicon germanium layers
- Patent number 12,266,524
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field stop IGBT with grown injection region
- Patent number 12,262,553
- Issue date Mar 25, 2025
- iPower Semiconductor
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic complementary field-effect transistors having carbon-dop...
- Patent number 12,262,559
- Issue date Mar 25, 2025
- Applied Materials, Inc.
- Andrew Anthony Cockburn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-die formation of single-crystal semiconductor structures
- Patent number 12,256,553
- Issue date Mar 18, 2025
- Micron Technology, Inc.
- Jeffery Brandt Hull
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride drain structures and methods of forming the same
- Patent number 12,255,232
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,249,606
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Minhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory structure with air gaps and method for preparing th...
- Patent number 12,245,431
- Issue date Mar 4, 2025
- NANYA TECHNOLOGY CORPORATION
- Yuan-Yuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a fin field effect transistor (FinFET) comprising epit...
- Patent number 12,237,403
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
- Patent number 12,230,714
- Issue date Feb 18, 2025
- Intel Corporation
- Ritesh K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a beta-Ga2O3-based single crystal film by f...
- Patent number 12,230,500
- Issue date Feb 18, 2025
- Tamura Corporation
- Quang Tu Thieu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
- Patent number 12,224,349
- Issue date Feb 11, 2025
- Intel Corporation
- Ritesh K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact architecture for capacitance reduction and satisfactory con...
- Patent number 12,224,326
- Issue date Feb 11, 2025
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of pre-treating substrate and method of directly forming gra...
- Patent number 12,217,958
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor device, substrate processing...
- Patent number 12,217,959
- Issue date Feb 4, 2025
- Kokusai Electric Corporation
- Kimihiko Nakatani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group IIIA nitride growth system and method
- Patent number 12,211,690
- Issue date Jan 28, 2025
- Robbie J. Jorgenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip manufacturing method
- Patent number 12,211,754
- Issue date Jan 28, 2025
- STMicroelectronics S.r.l.
- Pierpaolo Monge Roffarello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...
- Patent number 12,188,152
- Issue date Jan 7, 2025
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
MOSFET structure with controllable channel length by forming lightl...
- Patent number 12,183,822
- Issue date Dec 31, 2024
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of stacked lateral semiconductor devices and the resultin...
- Patent number 12,176,209
- Issue date Dec 24, 2024
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of providing an air- and/or moisture-barrier coating on a tw...
- Patent number 12,178,139
- Issue date Dec 24, 2024
- Paragraf Limited
- Robert Wallis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gate structure and method of manufacturing...
- Patent number 12,170,280
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
- Patent number 12,166,085
- Issue date Dec 10, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optoelectronic device having an array of germanium-based diodes wit...
- Patent number 12,166,063
- Issue date Dec 10, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Jean-Louis Ouvrier-Buffet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having a semiconductor material that is semimetal in bulk a...
- Patent number 12,148,816
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a shaped epitaxial region with shaping...
- Patent number 12,142,681
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate in memory macro edge and middle strap
- Patent number 12,142,684
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
- Publication number 20250109526
- Publication date Apr 3, 2025
- Resonac Corporation
- Kensho TANAKA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER
- Publication number 20250112042
- Publication date Apr 3, 2025
- ASM IP HOLDING B.V.
- Gregory Deye
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20250105007
- Publication date Mar 27, 2025
- Kokusai Electric Corporation
- Yugo ORIHASHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250098234
- Publication date Mar 20, 2025
- Kabushiki Kaisha Toshiba
- Shunsuke KAMIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURI...
- Publication number 20250079170
- Publication date Mar 6, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR PROCESSI...
- Publication number 20250079167
- Publication date Mar 6, 2025
- ASM IP HOLDING B.V.
- Ernesto Suarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING DEVICE
- Publication number 20250079171
- Publication date Mar 6, 2025
- TOKYO ELECTRON LIMITED
- Tatsuya MIYAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM OXIDE SEMICONDUCTOR DEVICE WITH ENHANCED OHMIC CONTACT PROP...
- Publication number 20250081567
- Publication date Mar 6, 2025
- POWER CUBESEMI INC.
- Tai Young KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...
- Publication number 20250063784
- Publication date Feb 20, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EUV DOSE REDUCING LAYERS, RELATED STRUCTURES, AND METHODS AND SYSTE...
- Publication number 20250046609
- Publication date Feb 6, 2025
- ASM IP HOLDING B.V.
- Fatemeh Davodi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD...
- Publication number 20250006512
- Publication date Jan 2, 2025
- Kokusai Electric Corporation
- Kazuya NABETA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...
- Publication number 20250006790
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS
- Publication number 20240429048
- Publication date Dec 26, 2024
- Applied Materials, Inc.
- Ruiying HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A PLANAR SEMICONDUCTOR SURFACE
- Publication number 20240429041
- Publication date Dec 26, 2024
- The Boeing Company
- Shanying Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURE...
- Publication number 20240404825
- Publication date Dec 5, 2024
- ASM IP HOLDING B.V.
- Ernesto Suarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...
- Publication number 20240404827
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...
- Publication number 20240395937
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
- Publication number 20240387711
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES
- Publication number 20240379817
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE IN MEMORY MACRO EDGE AND MIDDLE STRAP
- Publication number 20240379851
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATED CONTACT BATTERY AND PREPARATION PROCESS THEREFOR
- Publication number 20240371633
- Publication date Nov 7, 2024
- Tongwei Solar (Meishan) Co., Ltd.
- Hao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Source/Drain Structure and Method of Forming Same
- Publication number 20240363753
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE
- Publication number 20240355910
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY STUCTURE WITH AIR GAPS AND METHOD FOR PREPARING THE...
- Publication number 20240357821
- Publication date Oct 24, 2024
- NANYA TECHNOLOGY CORPORATION
- YUAN-YUAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Feature to Contact Interfaces
- Publication number 20240347611
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED SILICON-CONTAINING MATERIALS WITH INCREASED ELECTRICAL, MECHA...
- Publication number 20240332000
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Akhil Singhal
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SIC SUBSTRATE
- Publication number 20240332012
- Publication date Oct 3, 2024
- Jusung Engineering Co., Ltd.
- Chul Joo HWANG
- H01 - BASIC ELECTRIC ELEMENTS

Doping during depositing

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of fabricating thin, crystalline silicon film and thin film...

Structures with doped semiconductor layers and methods and systems...

Ultrawide bandgap semiconductor devices including magnesium germani...

Method for depositing boron containing silicon germanium layers

Field stop IGBT with grown injection region

Monolithic complementary field-effect transistors having carbon-dop...

On-die formation of single-crystal semiconductor structures

Gallium nitride drain structures and methods of forming the same

Integrated circuit device

Vertical memory structure with air gaps and method for preparing th...

Structure of a fin field effect transistor (FinFET) comprising epit...

Self-aligned gate endcap (SAGE) architectures with vertical sidewalls

Method of manufacturing a beta-Ga2O3-based single crystal film by f...

Self-aligned gate endcap (SAGE) architectures with vertical sidewalls

Contact architecture for capacitance reduction and satisfactory con...

Method of pre-treating substrate and method of directly forming gra...

Method of manufacturing semiconductor device, substrate processing...

Group IIIA nitride growth system and method

Semiconductor chip manufacturing method

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...

MOSFET structure with controllable channel length by forming lightl...

Preparation method for semiconductor structure

Formation of stacked lateral semiconductor devices and the resultin...

Method of providing an air- and/or moisture-barrier coating on a tw...

Method of manufacturing gate structure and method of manufacturing...

Ultrawide bandgap semiconductor devices including magnesium germani...

Optoelectronic device having an array of germanium-based diodes wit...

Devices having a semiconductor material that is semimetal in bulk a...

Semiconductor device having a shaped epitaxial region with shaping...

Cut metal gate in memory macro edge and middle strap

Patents Applicationslast 30 patents

SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER

SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...

SEMICONDUCTOR DEVICE

ENHANCEMENT-MODE SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURI...

METHODS OF FORMING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR PROCESSI...

SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING DEVICE

GALLIUM OXIDE SEMICONDUCTOR DEVICE WITH ENHANCED OHMIC CONTACT PROP...

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...

EUV DOSE REDUCING LAYERS, RELATED STRUCTURES, AND METHODS AND SYSTE...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD...

TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...

REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS

FORMING A PLANAR SEMICONDUCTOR SURFACE

METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURE...

METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...

Devices Having a Semiconductor Material That Is Semimetal in Bulk a...

STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES

CUT METAL GATE IN MEMORY MACRO EDGE AND MIDDLE STRAP

PASSIVATED CONTACT BATTERY AND PREPARATION PROCESS THEREFOR

Epitaxial Source/Drain Structure and Method of Forming Same

INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE

VERTICAL MEMORY STUCTURE WITH AIR GAPS AND METHOD FOR PREPARING THE...

Source/Drain Feature to Contact Interfaces

DOPED SILICON-CONTAINING MATERIALS WITH INCREASED ELECTRICAL, MECHA...

METHOD FOR MANUFACTURING SIC SUBSTRATE