Doping during depositing

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H01L21/0257

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/0257Doping during depositing

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Vapor deposition device and method of producing epitaxial wafer
- Patent number 12,327,724
- Issue date Jun 10, 2025
- Epicrew Corporation
- Akira Okabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for CVD deposition of n-type doped silicon carbide and epita...
- Patent number 12,325,932
- Issue date Jun 10, 2025
- LPE S.P.A.
- Silvio Preti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth structure for a radiation-emitting semiconductor component,...
- Patent number 12,324,275
- Issue date Jun 3, 2025
- Osram Opto Semiconductors GmbH
- Andreas Koller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating Fin-type field-effect transistor device havin...
- Patent number 12,324,224
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,308,371
- Issue date May 20, 2025
- NATIONAL TAIWAN UNIVERSITY
- Fang-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,308,228
- Issue date May 20, 2025
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for low temperature selective epitaxy in a dee...
- Patent number 12,297,559
- Issue date May 13, 2025
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity silicon-on-insulator substrate comprising an isola...
- Patent number 12,300,535
- Issue date May 13, 2025
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 12,294,027
- Issue date May 6, 2025
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for film formation
- Patent number 12,293,900
- Issue date May 6, 2025
- Gallium Enterprises Pty Ltd.
- Satyanarayan Barik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond semiconductor system and method
- Patent number 12,288,690
- Issue date Apr 29, 2025
- AKHAN SEMICONDUCTOR, INC.
- Adam Khan
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method of fabricating thin, crystalline silicon film and thin film...
- Patent number 12,272,550
- Issue date Apr 8, 2025
- Ramesh Kumar Harjivan Kakkad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures with doped semiconductor layers and methods and systems...
- Patent number 12,266,695
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
- Patent number 12,266,697
- Issue date Apr 1, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing boron containing silicon germanium layers
- Patent number 12,266,524
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field stop IGBT with grown injection region
- Patent number 12,262,553
- Issue date Mar 25, 2025
- iPower Semiconductor
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic complementary field-effect transistors having carbon-dop...
- Patent number 12,262,559
- Issue date Mar 25, 2025
- Applied Materials, Inc.
- Andrew Anthony Cockburn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-die formation of single-crystal semiconductor structures
- Patent number 12,256,553
- Issue date Mar 18, 2025
- Micron Technology, Inc.
- Jeffery Brandt Hull
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride drain structures and methods of forming the same
- Patent number 12,255,232
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,249,606
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Minhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory structure with air gaps and method for preparing th...
- Patent number 12,245,431
- Issue date Mar 4, 2025
- NANYA TECHNOLOGY CORPORATION
- Yuan-Yuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a fin field effect transistor (FinFET) comprising epit...
- Patent number 12,237,403
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
- Patent number 12,230,714
- Issue date Feb 18, 2025
- Intel Corporation
- Ritesh K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a beta-Ga2O3-based single crystal film by f...
- Patent number 12,230,500
- Issue date Feb 18, 2025
- Tamura Corporation
- Quang Tu Thieu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
- Patent number 12,224,349
- Issue date Feb 11, 2025
- Intel Corporation
- Ritesh K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact architecture for capacitance reduction and satisfactory con...
- Patent number 12,224,326
- Issue date Feb 11, 2025
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of pre-treating substrate and method of directly forming gra...
- Patent number 12,217,958
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor device, substrate processing...
- Patent number 12,217,959
- Issue date Feb 4, 2025
- Kokusai Electric Corporation
- Kimihiko Nakatani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group IIIA nitride growth system and method
- Patent number 12,211,690
- Issue date Jan 28, 2025
- Robbie J. Jorgenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip manufacturing method
- Patent number 12,211,754
- Issue date Jan 28, 2025
- STMicroelectronics S.r.l.
- Pierpaolo Monge Roffarello
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR DEPOSITING A BORON DOPED SILICON GERMANIUM LAYER AND AS...
- Publication number 20250174457
- Publication date May 29, 2025
- ASM IP HOLDING B.V.
- Lutz Muehlenbein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES WITH DOPED SEMICONDUCTOR LAYERS AND METHODS AND SYSTEMS...
- Publication number 20250176236
- Publication date May 29, 2025
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250169132
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION...
- Publication number 20250163606
- Publication date May 22, 2025
- Mach Corporation Co., Ltd.
- Goubun AKATSUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS
- Publication number 20250157814
- Publication date May 15, 2025
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS
- Publication number 20250151318
- Publication date May 8, 2025
- Intel Corporation
- Ritesh K. DAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ARCHITECTURE FOR CAPACITANCE REDUCTION AND SATISFACTORY CON...
- Publication number 20250151363
- Publication date May 8, 2025
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of Stacked Lateral Semiconductor Devices and the Resultin...
- Publication number 20250125146
- Publication date Apr 17, 2025
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CHIP MANUFACTURING METHOD
- Publication number 20250126877
- Publication date Apr 17, 2025
- STMicroelectronics S.r.l
- Pierpaolo MONGE ROFFARELLO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
- Publication number 20250109526
- Publication date Apr 3, 2025
- Resonac Corporation
- Kensho TANAKA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER
- Publication number 20250112042
- Publication date Apr 3, 2025
- ASM IP HOLDING B.V.
- Gregory Deye
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20250105007
- Publication date Mar 27, 2025
- Kokusai Electric Corporation
- Yugo ORIHASHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250098234
- Publication date Mar 20, 2025
- Kabushiki Kaisha Toshiba
- Shunsuke KAMIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURI...
- Publication number 20250079170
- Publication date Mar 6, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR PROCESSI...
- Publication number 20250079167
- Publication date Mar 6, 2025
- ASM IP HOLDING B.V.
- Ernesto Suarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING DEVICE
- Publication number 20250079171
- Publication date Mar 6, 2025
- TOKYO ELECTRON LIMITED
- Tatsuya MIYAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM OXIDE SEMICONDUCTOR DEVICE WITH ENHANCED OHMIC CONTACT PROP...
- Publication number 20250081567
- Publication date Mar 6, 2025
- POWER CUBESEMI INC.
- Tai Young KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...
- Publication number 20250063784
- Publication date Feb 20, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EUV DOSE REDUCING LAYERS, RELATED STRUCTURES, AND METHODS AND SYSTE...
- Publication number 20250046609
- Publication date Feb 6, 2025
- ASM IP HOLDING B.V.
- Fatemeh Davodi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD...
- Publication number 20250006512
- Publication date Jan 2, 2025
- Kokusai Electric Corporation
- Kazuya NABETA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...
- Publication number 20250006790
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS
- Publication number 20240429048
- Publication date Dec 26, 2024
- Applied Materials, Inc.
- Ruiying HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A PLANAR SEMICONDUCTOR SURFACE
- Publication number 20240429041
- Publication date Dec 26, 2024
- The Boeing Company
- Shanying Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURE...
- Publication number 20240404825
- Publication date Dec 5, 2024
- ASM IP HOLDING B.V.
- Ernesto Suarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...
- Publication number 20240404827
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...
- Publication number 20240395937
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
- Publication number 20240387711
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS

Doping during depositing

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Vapor deposition device and method of producing epitaxial wafer

Method for CVD deposition of n-type doped silicon carbide and epita...

Growth structure for a radiation-emitting semiconductor component,...

Method of fabricating Fin-type field-effect transistor device havin...

Semiconductor device and manufacturing method thereof

Manufacturing method for semiconductor silicon wafer

Method and apparatus for low temperature selective epitaxy in a dee...

High resistivity silicon-on-insulator substrate comprising an isola...

Semiconductor device having doped epitaxial region and its methods...

Apparatus and method for film formation

Diamond semiconductor system and method

Method of fabricating thin, crystalline silicon film and thin film...

Structures with doped semiconductor layers and methods and systems...

Ultrawide bandgap semiconductor devices including magnesium germani...

Method for depositing boron containing silicon germanium layers

Field stop IGBT with grown injection region

Monolithic complementary field-effect transistors having carbon-dop...

On-die formation of single-crystal semiconductor structures

Gallium nitride drain structures and methods of forming the same

Integrated circuit device

Vertical memory structure with air gaps and method for preparing th...

Structure of a fin field effect transistor (FinFET) comprising epit...

Self-aligned gate endcap (SAGE) architectures with vertical sidewalls

Method of manufacturing a beta-Ga2O3-based single crystal film by f...

Self-aligned gate endcap (SAGE) architectures with vertical sidewalls

Contact architecture for capacitance reduction and satisfactory con...

Method of pre-treating substrate and method of directly forming gra...

Method of manufacturing semiconductor device, substrate processing...

Group IIIA nitride growth system and method

Semiconductor chip manufacturing method

Patents Applicationslast 30 patents

METHODS FOR DEPOSITING A BORON DOPED SILICON GERMANIUM LAYER AND AS...

STRUCTURES WITH DOPED SEMICONDUCTOR LAYERS AND METHODS AND SYSTEMS...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION...

METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS

CONTACT ARCHITECTURE FOR CAPACITANCE REDUCTION AND SATISFACTORY CON...

Formation of Stacked Lateral Semiconductor Devices and the Resultin...

SEMICONDUCTOR CHIP MANUFACTURING METHOD

SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER

SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...

SEMICONDUCTOR DEVICE

ENHANCEMENT-MODE SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURI...

METHODS OF FORMING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR PROCESSI...

SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING DEVICE

GALLIUM OXIDE SEMICONDUCTOR DEVICE WITH ENHANCED OHMIC CONTACT PROP...

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...

EUV DOSE REDUCING LAYERS, RELATED STRUCTURES, AND METHODS AND SYSTE...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD...

TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...

REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS

FORMING A PLANAR SEMICONDUCTOR SURFACE

METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURE...

METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...

Devices Having a Semiconductor Material That Is Semimetal in Bulk a...