Doping during depositing

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H01L21/0257

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/0257Doping during depositing

Industries

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Patents Grantslast 30 patents

Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...
- Patent number 12,188,152
- Issue date Jan 7, 2025
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
MOSFET structure with controllable channel length by forming lightl...
- Patent number 12,183,822
- Issue date Dec 31, 2024
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of stacked lateral semiconductor devices and the resultin...
- Patent number 12,176,209
- Issue date Dec 24, 2024
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of providing an air- and/or moisture-barrier coating on a tw...
- Patent number 12,178,139
- Issue date Dec 24, 2024
- Paragraf Limited
- Robert Wallis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gate structure and method of manufacturing...
- Patent number 12,170,280
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
- Patent number 12,166,085
- Issue date Dec 10, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optoelectronic device having an array of germanium-based diodes wit...
- Patent number 12,166,063
- Issue date Dec 10, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Jean-Louis Ouvrier-Buffet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having a semiconductor material that is semimetal in bulk a...
- Patent number 12,148,816
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a shaped epitaxial region with shaping...
- Patent number 12,142,681
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate in memory macro edge and middle strap
- Patent number 12,142,684
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,132,119
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Kihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride-based semiconductor light-emitting element and manufacturin...
- Patent number 12,119,618
- Issue date Oct 15, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Shuichi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method with enhanced gate contact and threshold...
- Patent number 12,119,403
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Max Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor with shallow trench edge doping
- Patent number 12,113,079
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yueh-Chuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-inducing silicon liner in semiconductor devices
- Patent number 12,113,118
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,100,735
- Issue date Sep 24, 2024
- Samsung Electronics Co., Ltd.
- Namkyu Edward Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nitride semiconductor film
- Patent number 12,094,710
- Issue date Sep 17, 2024
- Tokyo Electron Limited
- Nobuaki Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for dividing a bar of one or more devices
- Patent number 12,087,577
- Issue date Sep 10, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gate spacers with stepped sidewalls by remo...
- Patent number 12,087,841
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a SiC substrate by simultaneously forming...
- Patent number 12,065,758
- Issue date Aug 20, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Increasing source/drain dopant concentration to reduced resistance
- Patent number 12,062,710
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back end of line nanowire power switch transistors
- Patent number 12,062,714
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing, Co., Ltd.
- Li-Yang Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain structure and method of forming same
- Patent number 12,062,720
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with conformal source/drain layer
- Patent number 12,057,495
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yao-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing same
- Patent number 12,057,498
- Issue date Aug 6, 2024
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature to contact interfaces
- Patent number 12,051,730
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,048,133
- Issue date Jul 23, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Nan Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD...
- Publication number 20250006512
- Publication date Jan 2, 2025
- Kokusai Electric Corporation
- Kazuya NABETA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...
- Publication number 20250006790
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS
- Publication number 20240429048
- Publication date Dec 26, 2024
- Applied Materials, Inc.
- Ruiying HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A PLANAR SEMICONDUCTOR SURFACE
- Publication number 20240429041
- Publication date Dec 26, 2024
- The Boeing Company
- Shanying Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURE...
- Publication number 20240404825
- Publication date Dec 5, 2024
- ASM IP HOLDING B.V.
- Ernesto Suarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...
- Publication number 20240404827
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...
- Publication number 20240395937
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
- Publication number 20240387711
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES
- Publication number 20240379817
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE IN MEMORY MACRO EDGE AND MIDDLE STRAP
- Publication number 20240379851
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATED CONTACT BATTERY AND PREPARATION PROCESS THEREFOR
- Publication number 20240371633
- Publication date Nov 7, 2024
- Tongwei Solar (Meishan) Co., Ltd.
- Hao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Source/Drain Structure and Method of Forming Same
- Publication number 20240363753
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY STUCTURE WITH AIR GAPS AND METHOD FOR PREPARING THE...
- Publication number 20240357821
- Publication date Oct 24, 2024
- NANYA TECHNOLOGY CORPORATION
- YUAN-YUAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE
- Publication number 20240355910
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Feature to Contact Interfaces
- Publication number 20240347611
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED SILICON-CONTAINING MATERIALS WITH INCREASED ELECTRICAL, MECHA...
- Publication number 20240332000
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Akhil Singhal
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SIC SUBSTRATE
- Publication number 20240332012
- Publication date Oct 3, 2024
- Jusung Engineering Co., Ltd.
- Chul Joo HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING BY MOLECULAR LAYER DEPOSITION
- Publication number 20240332014
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Xinke Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS
- Publication number 20240304724
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240297201
- Publication date Sep 5, 2024
- SUMCO CORPORATION
- Takeshi Kadono
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20240279844
- Publication date Aug 22, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240282801
- Publication date Aug 22, 2024
- SUMCO CORPORATION
- Takeshi KADONO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT
- Publication number 20240282813
- Publication date Aug 22, 2024
- Applied Materials, Inc.
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...
- Publication number 20240274437
- Publication date Aug 15, 2024
- ASM IP HOLDING B.V.
- Amir Kajbafvala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GLASS DEPOSITION FOR SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20240258099
- Publication date Aug 1, 2024
- Littelfuse Semiconductor (Wuxi) Co., Ltd
- Xingchong Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20240258427
- Publication date Aug 1, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MAN...
- Publication number 20240250164
- Publication date Jul 25, 2024
- DENSO CORPORATION
- Masahiro KUMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE SOURCE CONTACT STRUCTURE
- Publication number 20240243178
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS

Doping during depositing

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...

MOSFET structure with controllable channel length by forming lightl...

Preparation method for semiconductor structure

Formation of stacked lateral semiconductor devices and the resultin...

Method of providing an air- and/or moisture-barrier coating on a tw...

Method of manufacturing gate structure and method of manufacturing...

Ultrawide bandgap semiconductor devices including magnesium germani...

Optoelectronic device having an array of germanium-based diodes wit...

Devices having a semiconductor material that is semimetal in bulk a...

Semiconductor device having a shaped epitaxial region with shaping...

Cut metal gate in memory macro edge and middle strap

Semiconductor devices

Method of manufacturing nitride semiconductor light-emitting element

Nitride-based semiconductor light-emitting element and manufacturin...

Gate structure and method with enhanced gate contact and threshold...

Image sensor with shallow trench edge doping

Stress-inducing silicon liner in semiconductor devices

Nitride semiconductor structure, nitride semiconductor device, and...

Semiconductor devices

Method of forming nitride semiconductor film

Method for dividing a bar of one or more devices

Method of manufacturing gate spacers with stepped sidewalls by remo...

Method for manufacturing a SiC substrate by simultaneously forming...

Increasing source/drain dopant concentration to reduced resistance

Back end of line nanowire power switch transistors

Epitaxial source/drain structure and method of forming same

Semiconductor device with conformal source/drain layer

Silicon carbide semiconductor device and method for manufacturing same

Source/drain feature to contact interfaces

Semiconductor structure

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD...

TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...

REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS

FORMING A PLANAR SEMICONDUCTOR SURFACE

METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURE...

METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...

Devices Having a Semiconductor Material That Is Semimetal in Bulk a...

STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES

CUT METAL GATE IN MEMORY MACRO EDGE AND MIDDLE STRAP

PASSIVATED CONTACT BATTERY AND PREPARATION PROCESS THEREFOR

Epitaxial Source/Drain Structure and Method of Forming Same

VERTICAL MEMORY STUCTURE WITH AIR GAPS AND METHOD FOR PREPARING THE...

INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE

Source/Drain Feature to Contact Interfaces

DOPED SILICON-CONTAINING MATERIALS WITH INCREASED ELECTRICAL, MECHA...

METHOD FOR MANUFACTURING SIC SUBSTRATE

DOPING BY MOLECULAR LAYER DEPOSITION

METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT

METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...

METHOD OF GLASS DEPOSITION FOR SEMICONDUCTOR DEVICE FABRICATION

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES

DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MAN...

SELF-ALIGNED BACKSIDE SOURCE CONTACT STRUCTURE